DE2964545D1 - A method of treating aluminium microcircuits - Google Patents

A method of treating aluminium microcircuits

Info

Publication number
DE2964545D1
DE2964545D1 DE7979103102T DE2964545T DE2964545D1 DE 2964545 D1 DE2964545 D1 DE 2964545D1 DE 7979103102 T DE7979103102 T DE 7979103102T DE 2964545 T DE2964545 T DE 2964545T DE 2964545 D1 DE2964545 D1 DE 2964545D1
Authority
DE
Germany
Prior art keywords
microcircuits
treating aluminium
aluminium
treating
aluminium microcircuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7979103102T
Other languages
English (en)
Inventor
Jerome Michael Eldridge
Wen-Yaung Lee
Geraldine Cogin Schwartz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE2964545D1 publication Critical patent/DE2964545D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C23C8/12—Oxidising using elemental oxygen or ozone
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
DE7979103102T 1978-09-25 1979-08-23 A method of treating aluminium microcircuits Expired DE2964545D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/945,164 US4183781A (en) 1978-09-25 1978-09-25 Stabilization process for aluminum microcircuits which have been reactive-ion etched

Publications (1)

Publication Number Publication Date
DE2964545D1 true DE2964545D1 (en) 1983-02-24

Family

ID=25482734

Family Applications (1)

Application Number Title Priority Date Filing Date
DE7979103102T Expired DE2964545D1 (en) 1978-09-25 1979-08-23 A method of treating aluminium microcircuits

Country Status (5)

Country Link
US (1) US4183781A (de)
EP (1) EP0010138B1 (de)
JP (1) JPS5814069B2 (de)
CA (1) CA1114071A (de)
DE (1) DE2964545D1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5649598A (en) * 1979-09-28 1981-05-06 Nippon Electric Co Element with multilayer conductor
US4282043A (en) * 1980-02-25 1981-08-04 International Business Machines Corporation Process for reducing the interdiffusion of conductors and/or semiconductors in contact with each other
US4325984B2 (en) * 1980-07-28 1998-03-03 Fairchild Camera & Inst Plasma passivation technique for the prevention of post-etch corrosion of plasma-etched aluminum films
US4335506A (en) * 1980-08-04 1982-06-22 International Business Machines Corporation Method of forming aluminum/copper alloy conductors
JPS5747876A (en) * 1980-09-03 1982-03-18 Toshiba Corp Plasma etching apparatus and method
US4368220A (en) * 1981-06-30 1983-01-11 International Business Machines Corporation Passivation of RIE patterned al-based alloy films by etching to remove contaminants and surface oxide followed by oxidation
JPS59186326A (ja) * 1983-04-06 1984-10-23 Hitachi Ltd プラズマ処理装置
JPH0624190B2 (ja) * 1984-12-21 1994-03-30 株式会社東芝 配線形成方法
JPS62281331A (ja) 1986-05-29 1987-12-07 Fujitsu Ltd エツチング方法
US5017513A (en) * 1989-01-18 1991-05-21 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device
JP2528962B2 (ja) * 1989-02-27 1996-08-28 株式会社日立製作所 試料処理方法及び装置
US5462892A (en) * 1992-06-22 1995-10-31 Vlsi Technology, Inc. Semiconductor processing method for preventing corrosion of metal film connections
FR2720854B1 (fr) * 1993-12-28 1998-04-24 Fujitsu Ltd Procédé de fabrication de dispositifs à semiconducteurs dotés d'un câblage en aluminium par gravure et chauffage sous vide.
US5461008A (en) * 1994-05-26 1995-10-24 Delco Electronics Corporatinon Method of preventing aluminum bond pad corrosion during dicing of integrated circuit wafers
US5632667A (en) * 1995-06-29 1997-05-27 Delco Electronics Corporation No coat backside wafer grinding process
US20090050468A1 (en) * 2007-08-22 2009-02-26 Applied Materials, Inc. Controlled surface oxidation of aluminum interconnect

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1052029A (de) * 1962-09-20
US3496030A (en) * 1966-12-13 1970-02-17 Atomic Energy Commission Anti-seizing surfaces
JPS4945456B1 (de) * 1969-06-25 1974-12-04
BE758258A (fr) * 1969-11-01 1971-04-01 Sumitomo Chemical Co Procede de depot d'aluminium
US4026742A (en) * 1972-11-22 1977-05-31 Katsuhiro Fujino Plasma etching process for making a microcircuit device
US3986897A (en) * 1974-09-30 1976-10-19 Motorola, Inc. Aluminum treatment to prevent hillocking
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
DE2539193C3 (de) * 1975-09-03 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines planeren Leiterbahnsystems für integrierte Halbleiterschaltungen
GB1499857A (en) * 1975-09-18 1978-02-01 Standard Telephones Cables Ltd Glow discharge etching
GB1544172A (en) * 1976-03-03 1979-04-11 Int Plasma Corp Gas plasma reactor and process
US4030967A (en) * 1976-08-16 1977-06-21 Northern Telecom Limited Gaseous plasma etching of aluminum and aluminum oxide
US4057460A (en) * 1976-11-22 1977-11-08 Data General Corporation Plasma etching process

Also Published As

Publication number Publication date
US4183781A (en) 1980-01-15
CA1114071A (en) 1981-12-08
JPS5814069B2 (ja) 1983-03-17
JPS5544794A (en) 1980-03-29
EP0010138A1 (de) 1980-04-30
EP0010138B1 (de) 1983-01-19

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee