DE29724284U1 - Wellenlängenkonvertierende Vergußmasse und lichtabstrahlendes Halbleiterbauelement - Google Patents
Wellenlängenkonvertierende Vergußmasse und lichtabstrahlendes HalbleiterbauelementInfo
- Publication number
- DE29724284U1 DE29724284U1 DE29724284U DE29724284U DE29724284U1 DE 29724284 U1 DE29724284 U1 DE 29724284U1 DE 29724284 U DE29724284 U DE 29724284U DE 29724284 U DE29724284 U DE 29724284U DE 29724284 U1 DE29724284 U1 DE 29724284U1
- Authority
- DE
- Germany
- Prior art keywords
- potting compound
- light
- phosphor
- semiconductor component
- compound according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
- C09K11/7716—Chalcogenides
- C09K11/7718—Chalcogenides with alkaline earth metals
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- C09K11/7743—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing terbium
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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Description
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Claims (19)
1. Wellenlängenkonvertierende Vergußmasse (5) auf der Basis ei
nes transparenten Gießharzes, das mit einem Leuchtstoff ver
setzt ist, für ein elektrolumineszierendes Bauelement mit einem
ultraviolettes, blaues oder grünes Licht aussendenden Körper
(1),
dadurch gekennzeichnet, daß im transparenten Gieß
harz ein anorganisches Leuchtstoffpigmentpulver mit Leucht
stoffpigmenten (6) aus der Gruppe der Phosphore mit der allge
meinen Formel A3B5X12 : M dispergiert ist und daß die Leuchtstoff
pigmente Korngrößen ≦ 20 µm und einen mittleren Korndurchmesser
d50 ≦ 5 µm aufweisen.
2. Vergußmasse nach Anspruch 1, dadurch gekennzeich
net, daß die Leuchtstoffpigmente (6) kugelförmig oder schup
penförmig sind.
3. Vergußmasse nach Anspruch 1 oder 2, dadurch gekenn
zeichnet, daß der mittlere Korndurchmesser d50 der Leucht
stoffpigmente (6) zwischen 1 und 2 µm liegt.
4. Vergußmasse nach einem der Ansprüche 1 bis 3, dadurch
gekennzeichnet, daß die Vergußmasse (5) zusammengesetzt
ist aus:
- a) Gießharz ≧ 60 Gew.-%
- b) Leuchtstoffpigmente < 0 und ≦ 25 Gew.-%
- c) Thixotropiermittel < 0 und ≦ 10 Gew.-%
- d) mineralischem Diffusor < 0 und ≦ 10 Gew.-%
- e) Verarbeitungshilfsmittel < 0 und ≦ 3 Gew.-%
- f) Hydrophobiermittel < 0 und ≦ 3 Gew.-%
- g) Haftvermittler < 0 und ≦ 2 Gew.-%.
5. Vergußmasse nach einem der Ansprüche 1 bis 4, dadurch
gekennzeichnet, daß als Leuchtstoffpigmente Partikel
aus der Gruppe der Ce-dotierten Granate verwendet sind.
6. Vergußmasse nach Anspruch 5, dadurch gekennzeich
net, daß als Leuchtstoffpigmente YAG : Ce-Partikel verwendet
sind.
7. Vergußmasse nach einem der Ansprüche 1 bis 6, dadurch
gekennzeichnet, daß deren Eisengehalt ≦ 20 ppm ist.
8. Vergußmasse nach einem der Ansprüche 1 bis 7, dadurch
gekennzeichnet, daß die Leuchtstoffpigmente (6) mit
einem Silikon-Coating versehen sind.
9. Vergußmasse gemäß einem der Ansprüche 1 bis 8, dadurch
gekennzeichnet, daß das Leuchtstoffpigmentpulver vor
dem Vermischen mit dem Gießharz bei einer Temperatur ≧ 200°C
getempert ist.
10. Vergußmasse gemäß einem der Ansprüche 1 bis 9, dadurch
gekennzeichnet, daß das Leuchtstoffpigmentpulver vor
dem Vermischen mit dem Gießharz in einem höher siedenden
Alkohol geschlämmt und anschließend getrocknet ist.
11. Vergußmasse gemäß Anspruch 9 oder 10, dadurch ge
kennzeichnet, daß dem Leuchtstoffpigmentpulver ein
hydrophobierendes Silikonwachs zugegeben ist.
12. Vergußmasse nach einem der Ansprüche 9 bis 11, dadurch
gekennzeichnet, daß das Leuchstoffpigmentpulver mit
Alkoholen, Glykolethern und Silikonen im Gießharz bei erhöhten
Temperaturen oberflächenmodifiziert ist.
13. Lichtabstrahlendes Halbleiterbauelement mit einer
Vergußmasse nach einem der Ansprüche 1 bis 12 in einem
lichtabstrahlenden Halbleiterbauelement mit einem
Halbleiterkörper (1), der im Betrieb des Halbleiterbauelements
elektromagnetische Strahlung aussendet
dadurch gekennzeichnet,
daß der Halbleiterkörper (1) eine Halbleiterschichtenfolge (7) aufweist, die geeignet ist, im Betrieb des Halbleiterbauele ments elektromagnetische Strahlung aus dem ultravioletten, blauen und/oder grünen Spektralbereich auszusenden,
daß die Leuchtstoffpigmente einen Teil der aus diesem Spektral bereich stammenden Strahlung in Strahlung mit größerer Wellen länge umwandelt, derart, daß das Halbleiterbauelement Misch strahlung, insbesondere mischfarbiges Licht, bestehend aus die ser Strahlung und aus Strahlung aus dem ultravioletten, blauen und/oder grünen Spektralbereich aussendet.
daß der Halbleiterkörper (1) eine Halbleiterschichtenfolge (7) aufweist, die geeignet ist, im Betrieb des Halbleiterbauele ments elektromagnetische Strahlung aus dem ultravioletten, blauen und/oder grünen Spektralbereich auszusenden,
daß die Leuchtstoffpigmente einen Teil der aus diesem Spektral bereich stammenden Strahlung in Strahlung mit größerer Wellen länge umwandelt, derart, daß das Halbleiterbauelement Misch strahlung, insbesondere mischfarbiges Licht, bestehend aus die ser Strahlung und aus Strahlung aus dem ultravioletten, blauen und/oder grünen Spektralbereich aussendet.
14. Lichtabstrahlendes Halbleiterbauelement nach Anspruch 13,
dadurch gekennzeichnet, daß die Vergußmasse zumin
dest einen Teil des Halbleiterkörpers (1) umschließt.
15. Lichtabstrahlendes Halbleiterbauelement nach Anspruch 13
oder 13, dadurch gekennzeichnet, daß die vom Halb
leiterkörper (1) ausgesandte Strahlung im blauen Spektralbe
reich bei λ = 430 nm oder bei λ = 450 nm ein Lumineszenz-In
tentsitätsmaximum aufweist.
16. Lichtabstrahlendes Halbleiterbauelement nach einem der An
sprüche 13 bis 15, dadurch gekennzeichnet, daß der
Halbleiterkörper (1) in einer Ausnehmung (9) eines lichtun
durchlässigen Grundgehäuses (8) angeordnet ist und daß die Aus
nehmung (9) zumindest teilweise mit der Vergußmasse (5) ge
füllt.
17. Lichtabstrahlendes Halbleiterbauelement nach einem der An
sprüche 13 bis 16, dadurch gekennzeichnet, daß die
Vergußmasse (5) hinsichtlich Wirtsgitter und Art und Ausmaß der
Dotierung mit verschiedenartigen Leuchtstoffpigmenten (6) ver
sehen ist.
18. Lichtabstrahlendes Halbleiterbauelement nach einem der An
sprüche 15 bis 17, dadurch gekennzeichnet, daß das
Halbleiterbauelement weißes Licht abstrahlt.
19. Lichtabstrahlendes Halbleiterbauelement nach Anspruch 18,
dadurch gekennzeichnet, daß die Vergußmasse als
Leuchtstoffpigmente YAG : Ce-Partikel aufweist.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE29724284U DE29724284U1 (de) | 1996-09-20 | 1997-09-22 | Wellenlängenkonvertierende Vergußmasse und lichtabstrahlendes Halbleiterbauelement |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19638667A DE19638667C2 (de) | 1996-09-20 | 1996-09-20 | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
EP97909167A EP0862794B1 (de) | 1996-09-20 | 1997-09-22 | Wellenlängenkonvertierende vergussmasse und verfahren zu deren herstellung, verfahren zum herstellen eines licht abstrahlenden halbleiterbauelements und licht abstrahlendes halbleiterbauelement |
DE29724284U DE29724284U1 (de) | 1996-09-20 | 1997-09-22 | Wellenlängenkonvertierende Vergußmasse und lichtabstrahlendes Halbleiterbauelement |
Publications (1)
Publication Number | Publication Date |
---|---|
DE29724284U1 true DE29724284U1 (de) | 2000-09-21 |
Family
ID=7806400
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DE19638667A Expired - Lifetime DE19638667C2 (de) | 1996-06-26 | 1996-09-20 | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
DE29724284U Expired - Lifetime DE29724284U1 (de) | 1996-09-20 | 1997-09-22 | Wellenlängenkonvertierende Vergußmasse und lichtabstrahlendes Halbleiterbauelement |
DE59713056T Expired - Lifetime DE59713056D1 (de) | 1996-09-20 | 1997-09-22 | Wellenlängenkonvertierende Vergussmasse, deren Verwendung und Verfahren zu deren Herstellung |
DE29724849U Expired - Lifetime DE29724849U1 (de) | 1996-09-20 | 1997-09-22 | Lichtabstrahlendes optisches Bauelement mit einer wellenlängenkonvertierenden Vergußmasse |
DE59708820T Expired - Lifetime DE59708820D1 (de) | 1996-09-20 | 1997-09-22 | Wellenlängenkonvertierende vergussmasse und verfahren zu deren herstellung, verfahren zum herstellen eines licht abstrahlenden halbleiterbauelements und licht abstrahlendes halbleiterbauelement |
DE29724382U Expired - Lifetime DE29724382U1 (de) | 1996-09-20 | 1997-09-22 | Wellenlängenkonvertierende Vergußmasse und lichtabstrahlendes Halbleiterbauelement |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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DE19638667A Expired - Lifetime DE19638667C2 (de) | 1996-06-26 | 1996-09-20 | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
Family Applications After (4)
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DE59713056T Expired - Lifetime DE59713056D1 (de) | 1996-09-20 | 1997-09-22 | Wellenlängenkonvertierende Vergussmasse, deren Verwendung und Verfahren zu deren Herstellung |
DE29724849U Expired - Lifetime DE29724849U1 (de) | 1996-09-20 | 1997-09-22 | Lichtabstrahlendes optisches Bauelement mit einer wellenlängenkonvertierenden Vergußmasse |
DE59708820T Expired - Lifetime DE59708820D1 (de) | 1996-09-20 | 1997-09-22 | Wellenlängenkonvertierende vergussmasse und verfahren zu deren herstellung, verfahren zum herstellen eines licht abstrahlenden halbleiterbauelements und licht abstrahlendes halbleiterbauelement |
DE29724382U Expired - Lifetime DE29724382U1 (de) | 1996-09-20 | 1997-09-22 | Wellenlängenkonvertierende Vergußmasse und lichtabstrahlendes Halbleiterbauelement |
Country Status (8)
Country | Link |
---|---|
US (9) | US6066861A (de) |
EP (2) | EP1221724B1 (de) |
JP (10) | JP3364229B2 (de) |
KR (8) | KR100908171B1 (de) |
CN (8) | CN100492681C (de) |
BR (1) | BR9706787A (de) |
DE (6) | DE19638667C2 (de) |
WO (1) | WO1998012757A1 (de) |
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- 1997-09-22 KR KR1020087022131A patent/KR100933586B1/ko not_active IP Right Cessation
- 1997-09-22 CN CNB2004100367017A patent/CN100492681C/zh not_active Expired - Lifetime
- 1997-09-22 KR KR1020077013838A patent/KR100908172B1/ko not_active IP Right Cessation
- 1997-09-22 BR BR9706787A patent/BR9706787A/pt not_active IP Right Cessation
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- 1997-09-22 CN CN97191656.XA patent/CN1156029C/zh not_active Expired - Lifetime
- 1997-09-22 CN CN2006100944827A patent/CN101081909B/zh not_active Expired - Lifetime
- 1997-09-22 EP EP02007512A patent/EP1221724B1/de not_active Revoked
- 1997-09-22 CN CNB2004100367021A patent/CN100367521C/zh not_active Expired - Lifetime
- 1997-09-22 DE DE29724284U patent/DE29724284U1/de not_active Expired - Lifetime
- 1997-09-22 CN CNA2006100944831A patent/CN101081910A/zh active Pending
- 1997-09-22 CN CNB2003101163991A patent/CN1273537C/zh not_active Expired - Lifetime
- 1997-09-22 CN CNB2004100367036A patent/CN100492682C/zh not_active Expired - Lifetime
- 1997-09-22 WO PCT/DE1997/002139 patent/WO1998012757A1/de not_active Application Discontinuation
- 1997-09-22 DE DE59713056T patent/DE59713056D1/de not_active Expired - Lifetime
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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DE10101554A1 (de) * | 2001-01-15 | 2002-08-01 | Osram Opto Semiconductors Gmbh | Lumineszenzdiode |
US7015514B2 (en) | 2001-01-15 | 2006-03-21 | Osram Opto Semiconductors Gmbh | Light-emitting diode and method for the production thereof |
US8207552B2 (en) | 2002-06-26 | 2012-06-26 | Lg Electronics Inc. | Thin film light emitting diode |
US8288787B2 (en) | 2002-06-26 | 2012-10-16 | Lg Electronics, Inc. | Thin film light emitting diode |
US8384091B2 (en) | 2002-06-26 | 2013-02-26 | Lg Electronics Inc. | Thin film light emitting diode |
US8445921B2 (en) | 2002-06-26 | 2013-05-21 | Lg Electronics, Inc. | Thin film light emitting diode |
US9281454B2 (en) | 2002-06-26 | 2016-03-08 | Lg Innotek Co., Ltd. | Thin film light emitting diode |
US9716213B2 (en) | 2002-06-26 | 2017-07-25 | Lg Innotek Co., Ltd. | Thin film light emitting diode |
US10326059B2 (en) | 2002-06-26 | 2019-06-18 | Lg Innotek Co., Ltd. | Thin film light emitting diode |
US10825962B2 (en) | 2002-06-26 | 2020-11-03 | Lg Innotek Co., Ltd. | Thin film light emitting diode |
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