DE29724458U1 - Lichtemittierende Vorrichtung und Anzeigegerät - Google Patents

Lichtemittierende Vorrichtung und Anzeigegerät

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Publication number
DE29724458U1
DE29724458U1 DE1997224458 DE29724458U DE29724458U1 DE 29724458 U1 DE29724458 U1 DE 29724458U1 DE 1997224458 DE1997224458 DE 1997224458 DE 29724458 U DE29724458 U DE 29724458U DE 29724458 U1 DE29724458 U1 DE 29724458U1
Authority
DE
Germany
Prior art keywords
light
emitting device
phosphor
emitting
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1997224458
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27524906&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE29724458(U1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Publication of DE29724458U1 publication Critical patent/DE29724458U1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7767—Chalcogenides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
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    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
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    • G02B6/005—Means for improving the coupling-out of light from the light guide provided by one optical element, or plurality thereof, placed on the light output side of the light guide
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    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H—ELECTRICITY
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    • H—ELECTRICITY
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    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Description

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Claims (41)

1. Lichtemittierende Vorrichtung, umfassend ein lichtemittierendes Bauteil (102) und einen Leuchtstoff (101), der in der Lage ist, einen Teil des von dem lichtemittierenden Bauteil ausgesandten Lichts zu absorbieren und Licht einer anderen Wellenlänge als der des absorbierten Lichtes auszusenden, wobei das lichtemittierende Bauteil (102) einen Halbleiter aus einer Nitridverbindung der Formel
IniGajAlkN
umfaßt, in der 0 ≦ i, 0 ≦ j, 0 k, und
i + j + k = 1
inklusive InGaN und GaN dotiert mit verschiedenen Verunreinigungen
und wobei der Leuchtstoff ein, zwei oder mehr Granaffluoreszenzstoffe der allgemeinen Formel
(Re1-rSmr)3(Al1-sGas)5O12 : Ce
enthält, in der 0 ≦ r ≦ 1 und 0 ≦ s ≦ 1
und Re mindestens ein Material ausgewählt aus Y und Gd ist
und mindestens ein in dem Leuchtstoff enthaltenes Material die Ungleichung r ≠ 0 erfüllt und wobei das lichtemittierende Bauteil (102) eine blaues Licht emittierende Diode (LED) ist, und wobei sich der Leuchtstoff in direktem oder indirektem Kontakt mit der blaues Licht emittierenden Diode befindet und wobei ein Hauptemissionspeak der lichtemittierenden Diode im Bereich von 400 nm bis 530 nm liegt und eine Hauptemissionswellenlänge des Leuchtstoffs so eingestellt ist, daß sie länger als der Hauptemissionspeak des lichtemittierenden Bauteils ist.
2. Lichtemittierende Vorrichtung nach Anspruch 1, in der 0 ≦ s < 1 ist.
3. Lichtemittierende Vorrichtung nach mindestens einem der vorhergehenden Ansprüche, in der der Leuchtstoff ein Fluoreszenzmaterial der allgemeinen Formel
(Y1-p-q-r Gdp Ceq Smr)3(Al1-s Gas)5O12
ist, in der 0 ≦ p ≦ 0,8, 0,003 ≦ q < 0,2, 0,0003 ≦ r ≦ 0,08 und 0 ≦ s ≦ 1
und in der p vorzugsweise kleiner als 0,7, und noch bevorzugter kleiner als 0,6 ist,
und in der r vorzugsweise im Bereich von 0,0007 ≦ r ≦ 0,02 liegt.
4. Lichtemittierende Vorrichtung nach Anspruch 3, in der 0 ≦ s < 1.
5. Lichtemittierende Vorrichtung nach mindestens einem der vorhergehenden Ansprüche, in der die lichtemittierende Schicht des lichtemittierenden Bauteils einen Halbleiter aus einer In enthaltenden Galliumnitridverbindung enthält, und der Leuchtstoff ein Yttrium-Aluminium-Granat-Fluoreszenzmaterial ist, wobei ein Teil des Aluminiums des Yttrium-Aluminium-Granat-Fluoreszenzmaterials mit Gallium substituiert ist, so daß das Verhältnis von Ga : Al im Bereich von 1 : 1 bis 4 : 6 liegt und ein Teil des Yttriums mit Gadolinium substituiert ist, so daß das Verhältnis von Y : Gd im Bereich von 9 : 1 bis 1 : 9 und bevorzugter im Bereich von 4 : 1 bis 2 : 3 liegt.
6. Lichtemittierende Vorrichtung, umfassend ein lichtemittierendes Bauteil (102) und einen Leuchtstoff (101), der in der Lage ist, einen Teil des von dem lichtemittierenden Bauteil ausgesandten Lichts zu absorbieren und Licht einer anderen Wellenlänge als der des absorbierten Lichtes auszusenden, wobei das lichtemittierende Bauteil (102) einen Halbleiter aus einer Nitridverbindung der Formel
IniGajAlkN
umfaßt, in der 0 ≦ i, 0 ≦ j, 0 ≦ k, und

i + j + k = 1
inklusive InGaN und GaN dotiert mit verschiedenen Verunreinigungen
und wobei der Leuchtstoff ein erstes Fluoreszenzmaterial der allgemeinen Formel
Y3(Al1-sGas)sO12 : Ce
enthält, in der 0 ≦ s ≦ 1 und ein zweites Fluoreszenzmaterial der allgemeinen Formel
Re3Al5O12 : Ce
enthält, in der Re mindestens ein Material ausgewählt aus Y und Gd ist
und wobei das lichtemittierende Bauteil (102) eine blaues Licht emittierende Diode (LED) ist, und wobei der Leuchtstoff in direktem oder indirektem Kontakt mit der blaues Licht emittierenden Diode steht und wobei ein Hauptemissionspeak der lichtemittierenden Diode im Bereich von 400 nm bis 530 nm liegt und eine Hauptemissionswellenlänge des Leuchtstoffs so eingestellt ist, daß sie länger als der Hauptemissionspeak des lichtemittierenden Bauteils ist.
7. Lichtemittierende Vorrichtung nach Anspruch 6, in der 0 ≦ s < 1 und
Re = Y.
8. Lichtemittierende Vorrichtung nach mindestens einem der vorhergehenden Ansprüche, in der das lichtemittierende Bauteil (102) in einer Kugelschale (105a) eines ersten Befestigungsanschlusses (105) eingebaut ist, die Kugelschale (105a) mit Überzugsmaterial (101) zur Ummantelung des lichtemittierenden Bauteils (102) gefüllt ist, das lichtemittierende Bauteil (102) zwei Elektroden hat, deren eine mittels eines Anschlußdrahtes (103) mit einem zweiten Befestigungsanschluß (106) verbunden ist, das lichtemittierende Bauteil (102), die Kugelschale (105a) und das Überzugsmaterial (101) mit einem Gießmaterial (104) abgedeckt sind, der erste Befestigungsanschluß (105) und der zweite Befestigungsanschluß (106) teilweise mit dem Gießmaterial (104) bedeckt sind, und der Leuchtstoff entweder in dem Gießmaterial (104) oder in dem Überzugsmaterial (101) oder sowohl im Überzugsmaterial (101) als auch im Gießmaterial (104) enthalten sein kann.
9. Lichtemittierende Vorrichtung nach mindestens einem der vorhergehenden Ansprüche, in der das Gießmaterial (104) ein transparentes Material, wie Epoxyharz, Harnstoffharz, Silikonharz oder Glas, ist.
10. Lichtemittierende Vorrichtung nach mindestens einem der vorhergehenden Ansprüche, in der das Überzugsmaterial (101) ein transparentes Material, wie Epoxyharz, Harnstoffharz, Silikonharz oder Glas ist.
11. Lichtemittierende Vorrichtung nach mindestens einem der vorhergehenden Ansprüche, in der das Gießmaterial (104) und das Überzugsmaterial (101) gleich sind.
12. Lichtemittierende Vorrichtung nach mindestens einem der vorhergehenden Ansprüche, in der das Gießmaterial (104) ein Dispergiermittel, wie Bariumtitanat, Titanoxid, Aluminiumoxid oder Siliciumdioxid, enthält.
13. Lichtemittierende Vorrichtung nach mindestens einem der vorhergehenden Ansprüche, in der das Gießmaterial (104) ein Färbemittel enthält.
14. Lichtemittierende Vorrichtung nach mindestens einem der vorhergehenden Ansprüche, in der das lichtemittierende Bauteil (202) in eine Vertiefung eines Formgehäuses (204) eingebaut wird, das mit einem Beschichtungsmaterial (201) zur Ummantelung des lichtemittierenden Bauteils (202) gefüllt ist, wobei das lichtemittierende Bauteil (202) Elektroden aufweist, die durch Anschlußdrähte (203) mit den Metallklemmen (205) verbunden sind, die an gegenüberliegenden Seiten des Gehäuses (204) angebracht sind, und wobei das Überzugsmaterial (201) den Leuchtstoff enthält.
15. Lichtemittierende Vorrichtung nach mindestens einem der vorhergehenden Ansprüche, umfassend eine im wesentlichen rechteckige Lichtleiterplatte (704), die mit dem auf ihrer einen Stirnseite angebrachten lichtemittierenden Bauteil (702) versehen ist, und mit Ausnahme einer Hauptfläche mit einem reflektierenden Material (705) beschichtet ist.
16. Lichtemittierende Vorrichtung nach mindestens einem der vorhergehenden Ansprüche, in der der Leuchtstoff in einem auf der Stirnseite aufgebrachten Überzugsmaterial (701) enthalten ist und in direktem Kontakt mit dem lichtemittierenden Bauteil (702) steht.
17. Lichtemittierende Vorrichtung nach mindestens einem der vorhergehenden Ansprüche, in der der Leuchtstoff (706) auf einer nicht mit reflektierendem Material (705) versehenen Hauptfläche der Lichtleiterplatte (704) aufgebracht ist.
18. LED Anzeigegerät, umfassend Vorrichtungen nach mindestens einem der vorhergehenden Ansprüche, die in einer Matrix und in einem Antriebsschaltkreis angeordnet sind, der das LED Anzeigegerät gemäß den ihm eingegebenen Daten antreibt.
19. Lichtemittierende Vorrichtung (100) umfassend
ein lichtemittierendes Halbleiterbauteil (102), das ein erstes Licht mit einer er­ sten Wellenlänge emittiert, dessen Emissionsspektrum eine Peak-Wellenlänge λ von nicht mehr als 530 nm aufweist, und
ein Harz (101), das einen Leuchtstoff enthält, der zumindest einen Teil des ersten Lichts aus dem lichtemittierenden Halbleiterbauteil absorbiert und ein zweites Licht emittiert, wobei der Leuchtstoff ein Seltenerdmetall enthaltender Granat ist und eine gesteuerte Teilchenverteilung hat.
20. Lichtemittierende Vorrichtung nach Anspruch 19, dadurch gekennzeichnet, daß der Leuchtstoff YAG:Ce enthält.
21. Lichtemittierende Vorrichtung nach Anspruch 19 oder 20, dadurch gekenn­ zeichnet, daß das Emissionsspektrum des zweiten Lichts wesentlich größer ist als das des ersten Lichts.
22. Lichtemittierende Vorrichtung nach einem der Ansprüche 19 bis 21, dadurch gekennzeichnet, daß das lichtemittierende Halbleiterbauteil blaues Licht emittiert.
23. Lichtemittierende Vorrichtung nach einem der Ansprüche 19 bis 22, dadurch gekennzeichnet, daß das den Leuchtstoff enthaltende Harz über oder auf dem Halbleiterkörper (102) angeordnet ist.
24. Lichtemittierende Vorrichtung nach einem der Ansprüche 19 bis 22, dadurch gekennzeichnet, daß das den Leuchtstoff enthaltende Harz zumindest einen Teil des lichtemittierenden Halbleiterbauteils (102) und zumindest einen Teil der elektrischen Verbindungen (103) des lichtemittierenden Halbleiterbauteils direkt umhüllt.
25. Lichtemittierende Vorrichtung nach Anspruch 23 oder 24, dadurch gekennzeichnet, daß das von dem lichtemittierenden Halbleiterbauteil emittierte erste Licht durch den auf der Oberfläche auf der lichtemittierenden Seite eines transparenten Harzes angeordneten Leuchtstoff ausgestrahlt wird.
26. Lichtemittierende Vorrichtung nach einem der Ansprüche 19 bis 22, dadurch gekennzeichnet, daß das den Leuchtstoff enthaltende Harz auf mindestens einen Teil der Oberfläche des lichtemittierenden Halbleiterbauteils (102) aufgetragen ist.
27. Lichtemittierende Vorrichtung nach einem der Ansprüche 19 bis 26, dadurch gekennzeichnet, daß das lichtemittierende Halbleiterbauteil (102) in einer sich in der Querschnittsansicht öffnenden C-Form angeordnet ist und das erste Licht aus der Öffnung durch die den Leuchtstoff enthaltende Harzschicht (101) ausgestrahlt wird.
28. Lichtemittierende Vorrichtung nach einem der Ansprüche 19 bis 26, dadurch gekennzeichnet, daß der Halbleiterkörper (102) in einem Gehäuse (204) angeordnet ist und eine Öffnung in dem Gehäuse zumindest teilweise mit dem den Leuchtstoff enthaltenden Harz (101) gefüllt ist.
29. Lichtemittierende Vorrichtung nach einem der Ansprüche 19 bis 28, dadurch gekennzeichnet, daß die Peak-Wellenlänge des zweiten Lichts größer ist als die erste Peak-Wellenlänge des ersten Lichts.
30. Lichtemittierende Vorrichtung nach einem der Ansprüche 19 bis 29, dadurch gekennzeichnet, daß das den Leuchtstoff enthaltende Harz Epoxyharz, Harn­ stoffharz oder Silizium enthält.
31. Lichtemittierende Vorrichtung nach einem der Ansprüche 19 bis 30, dadurch gekennzeichnet, daß das den Leuchtstoff und/oder eine Formmasse (104) enthaltende Harz (101) ein Dispergiermittel enthält.
32. Lichtemittierende Vorrichtung nach einem der Ansprüche 19 bis 31, dadurch gekennzeichnet, daß der Leuchtstoff einen blauen Bereich des ersten Lichts absorbiert und umwandelt.
33. Lichtemittierende Vorrichtung nach einem der Ansprüche 19 bis 32, dadurch gekennzeichnet, daß das den Leuchtstoff enthaltende Harz eine Vielzahl von verschiedenen Arten eines anorganischen Lumineszenzmaterials enthält.
34. LED-Display mit einer Vielzahl der lichtemittierenden Vorrichtungen nach einem der Ansprüche 19 bis 33.
35. Lichtquelle insbesondere für Automobile und/oder Luftfahrzeuge mit mindestens einer lichtemittierenden Vorrichtung nach einem der Ansprüche 19 bis 33.
36. Beleuchtung für Flüssigkristall-Displays mit mindestens einer lichtemittierenden Vorrichtung nach einem der Ansprüche 19 bis 33.
37. Lichtemittierende Vorrichtung nach Anspruch 31, dadurch gekennzeichnet, daß das Dispergiermittel Bariumtitanat, Titanoxid, Aluminiumoxid und/oder Siliziumdioxid enthält.
38. Lichtemittierende Vorrichtung nach einem der Ansprüche 20 bis 33 und 37, dadurch gekennzeichnet, daß das YAG:Ce Gd enthält.
39. Lichtemittierende Vorrichtung nach einem der Ansprüche 19 bis 33, 37 und 38, dadurch gekennzeichnet, daß die Peak-Wellenlänge nicht kleiner als 400 nm ist.
40. Lichtemittierende Vorrichtung nach einem der Ansprüche 19 bis 33 und 37 bis 39, dadurch gekennzeichnet, daß das Seltenerdmetall Ce ist.
41. Lichtemittierende Vorrichtung nach einem der Ansprüche 19 bis 33 und 37 bis 40, dadurch gekennzeichnet, daß der Leuchtstoff Granat enthält, der Y und Al enthält und mindestens durch Ce aktiviert ist.
DE1997224458 1996-07-29 1997-07-29 Lichtemittierende Vorrichtung und Anzeigegerät Expired - Lifetime DE29724458U1 (de)

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US7709852B2 (en) 1996-09-20 2010-05-04 Osram Gmbh Wavelength-converting casting composition and light-emitting semiconductor component
DE102009037186A1 (de) * 2009-08-12 2011-02-17 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauteil
US9196800B2 (en) 1996-06-26 2015-11-24 Osram Gmbh Light-radiating semiconductor component with a luminescence conversion element
US10533729B2 (en) 2012-02-27 2020-01-14 Osram Gmbh Light source with LED chip and luminophore layer

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US9196800B2 (en) 1996-06-26 2015-11-24 Osram Gmbh Light-radiating semiconductor component with a luminescence conversion element
US7709852B2 (en) 1996-09-20 2010-05-04 Osram Gmbh Wavelength-converting casting composition and light-emitting semiconductor component
US8071996B2 (en) 1996-09-20 2011-12-06 Osram Gmbh Wavelength-converting casting composition and light-emitting semiconductor component
DE102009037186A1 (de) * 2009-08-12 2011-02-17 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauteil
US9012926B2 (en) 2009-08-12 2015-04-21 Osram Opto Semiconductor Gmbh Radiation-emitting semiconductor component
US10533729B2 (en) 2012-02-27 2020-01-14 Osram Gmbh Light source with LED chip and luminophore layer

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