DE29724670U1 - Lichtemittierende Vorrichtung und Diode - Google Patents
Lichtemittierende Vorrichtung und DiodeInfo
- Publication number
- DE29724670U1 DE29724670U1 DE1997224670 DE29724670U DE29724670U1 DE 29724670 U1 DE29724670 U1 DE 29724670U1 DE 1997224670 DE1997224670 DE 1997224670 DE 29724670 U DE29724670 U DE 29724670U DE 29724670 U1 DE29724670 U1 DE 29724670U1
- Authority
- DE
- Germany
- Prior art keywords
- light
- phosphor
- emitting device
- light emitting
- fluorescent material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7767—Chalcogenides
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
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- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
- G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
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- G02B6/0073—Light emitting diode [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Description
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Claims (36)
1. Lichtemittierende Vorrichtung, umfassend eine lichtemittierende Komponente und
einen Leuchtstoff, der in der Lage ist, einen Teil des von der lichtemittierenden
Komponente ausgesandten Lichts zu absorbieren und Licht einer anderen Wellenlänge
als der des absorbierten Lichtes auszusenden, wobei die lichtemittierende
Komponente einen Halbleiter aus einer Nitridverbindung umfasst, und der Leuchtstoff
ein Granatfluoreszenzmaterial enthält, das mindestens ein Element ausgewählt aus
der Gruppe bestehend aus Y, Lu, Se, La, Gd und Sm und mindestens ein Element
ausgewählt aus der Gruppe bestehend aus Al, Ga und In umfasst und mit Cerium
aktiviert ist.
2. Lichtemittierende Vorrichtung nach Anspruch 1, in der der verwendete Leuchtstoff ein
Yttrium-Aluminium-Granatfluoreszenzmaterial enthält, das Y und Al enthält.
3. Lichtemittierende Vorrichtung nach Anspruch 1, in der der Leuchtstoff ein
Fluoreszenzmaterial der allgemeinen Formel (Re1-rSmr)3(Al1-sGas)5O12:Ce sein
kann, wobei 0 ≦ r < 1 und 0 ≦ s ≦ 1 und Re mindestens ein Material ausgewählt aus Y
und Gd ist.
4. Lichtemittierende Vorrichtung nach Anspruch 3, in der der Leuchtstoff ein
Fluoreszenzmaterial der allgemeinen Formel (Y1-p-q-rGdpCeqSmr)3(Al1-sGas)5O12
enthält, in der 0 ≦ p ≦ 0,8, 0,003 ≦ q ≦ 0,2, 0,0003 ≦ r ≦ 0,08 und 0 ≦ s ≦ 1.
5. Lichtemittierende Vorrichtung nach Anspruch 2, in der der Leuchtstoff zwei oder mehr
mit Cerium aktivierte Yttrium-Aluminium-Granatfluoreszenzmaterialien
unterschiedlicher Zusammensetzung, darunter Y und Al, enthalten kann.
6. Lichtemittierende Vorrichtung nach Anspruch 3, in der der Leuchtstoff zwei oder mehr
Fluoreszenzmaterialien unterschiedlicher Zusammensetzung der allgemeinen Formel
(Re1-rSmr)3(Al1-sGas)5O12:Ce enthält, wobei 0 ≦ r < 1 und 0 ≦ s ≦ 1 und Re
mindestens ein Material ausgewählt aus Y und Gd ist.
7. Lichtemittierende Vorrichtung nach Anspruch 1, in der der Leuchtstoff ein erstes
Fluoreszenzmaterial der allgemeinen Formel Y3(Al1-sGas)5O12:Ce und ein zweites
Fluoreszenzmaterial der allgemeinen Formel Re3Al5O12:Ce enthalten kann, in der 0 ≦
s ≦ 1 und Re mindestens ein Material ausgewählt aus Y, Gd und La ist.
8. Lichtemittierende Vorrichtung nach Anspruch 2, in der der Leuchtstoff ein Yttrium-
Aluminium-Granat-Fluoreszenzmaterial sein kann, das ein erstes Fluoreszenzmaterial
und ein zweites Fluoreszenzmaterial enthält, wobei jeweils unterschiedliche Teile des
Yttriums in dem ersten und zweiten Fluoreszenzmaterial mit Gadolinium substituiert
sind.
9. Lichtemittierende Vorrichtung nach Anspruch 1, in der der Hauptemissionspeak der
lichtemittierenden Komponente in den Bereich von 400 nm bis 530 nm gelegt ist und
die Hauptemissionswellenlänge des Leuchtstoffs länger eingestellt ist als der
Hauptemissionspeak der lichtemittierenden Komponente.
10. Lichtemittierende Vorrichtung nach Anspruch 9, in der die lichtemittierende Schicht der
lichtemittierenden Komponente einen Halbleiter aus In enthaltendem Galliumnitrid
enthält, und der Leuchtstoff ein Yttrium-Aluminium-Granat-Fluoreszenzmaterial ist,
wobei ein Teil von Al in dem Yttrium-Aluminium-Granat-Fluoreszenzmaterial mit Ga
substituiert ist, so daß das Verhältnis von Ga : Al im Bereich von 1 : 1 bis 4 : 6 liegt und
ein Teil von Y mit Gd substituiert ist, so daß das Verhältnis von Y : Gd im Bereich von
4 : 1 bis 2 : 3 liegt.
11. Lichtemittierende Vorrichtung gemäß Anspruch 1, umfassend eine im wesentlichen
rechtwinklige Lichtleitplatte, die mit einer lichtemittierenden Komponente ausgestattet
ist, welche auf einer ihrer Seitenflächen mittels des Leuchtstoffes aufgebracht ist und
bis auf eine Hauptfläche im wesentlichen mit einem reflektierenden Material bedeckt
ist, wobei das von der lichtemittierenden Komponente ausgesandte Licht durch den
Leuchtstoff und die Lichtleitplatte in planares Licht umgewandelt wird, das von der
Hauptfläche der Lichtleitplatte austritt.
12. Lichtemittierende Vorrichtung gemäß Anspruch 1, umfassend eine im wesentlichen
rechtwinklige Lichtleitplatte, die mit einer auf einer ihrer Seitenflächen aufgebrachten
lichtemittierenden Komponente ausgestattet ist, und auf einer ihrer Hauptflächen einen
Leuchtstoff trägt und bis auf eine Hauptfläche im wesentlichen mit einem
reflektierenden Material bedeckt ist, wobei das von der lichtemittierenden Komponente
ausgesandte Licht durch die Lichtleitplatte und den Leuchtstoff in planares Licht
umgewandelt wird, das von der Hauptfläche der Lichtleitplatte austritt.
13. LED-Anzeigevorrichtung, die die lichtemittierenden Vorrichtungen gemäß Anspruch 1
bis 10, die in Matrixform angeordnet sind, und einen Steuerkreis umfasst, der die LED-
Anzeigevorrichtung gemäß den Anzeigedaten, die ihm eingegeben werden, ansteuert.
14. Lichtemittierende Diode umfassend:
einen äußeren Anschluss, der eine Kugelschale und einen inneren Anschluss aufweist
einen in der Kugelschale des äußeren Anschlusses aufgebrachten LED-Chip, wobei
eine der Elektroden mit dem äußeren Anschluss elektrisch verbunden ist;
ein transparentes Überzugsmaterial, mit dem die Kugelschale befüllt ist, so dass der LED-Chip bedeckt ist; und
eine lichtemittierende Diode mit einem Gussmaterial, das den mit dem Überzugsmaterial bedeckten LED-Chip einschließlich der Kugelschale des äußeren Anschlusses, des inneren Anschlusses und einer weiteren Elektrode des LED-Chips bedeckt, wobei
der LED-Chip ein Halbleiter aus einer Nitridverbindung ist und das Überzugsmaterial mindestens ein Element ausgewählt aus der Gruppe bestehend aus Y, Lu, Sc, La, Gd und Sm, mindestens ein Element ausgewählt aus der Gruppe bestehend aus Al, Ga und In und einen aus mit Cerium aktivierten Granat Fluoreszenzmaterial hergestellten Leuchtstoff enthält.
einen äußeren Anschluss, der eine Kugelschale und einen inneren Anschluss aufweist
einen in der Kugelschale des äußeren Anschlusses aufgebrachten LED-Chip, wobei
eine der Elektroden mit dem äußeren Anschluss elektrisch verbunden ist;
ein transparentes Überzugsmaterial, mit dem die Kugelschale befüllt ist, so dass der LED-Chip bedeckt ist; und
eine lichtemittierende Diode mit einem Gussmaterial, das den mit dem Überzugsmaterial bedeckten LED-Chip einschließlich der Kugelschale des äußeren Anschlusses, des inneren Anschlusses und einer weiteren Elektrode des LED-Chips bedeckt, wobei
der LED-Chip ein Halbleiter aus einer Nitridverbindung ist und das Überzugsmaterial mindestens ein Element ausgewählt aus der Gruppe bestehend aus Y, Lu, Sc, La, Gd und Sm, mindestens ein Element ausgewählt aus der Gruppe bestehend aus Al, Ga und In und einen aus mit Cerium aktivierten Granat Fluoreszenzmaterial hergestellten Leuchtstoff enthält.
15. Lichtemittierende Diode nach Anspruch 14, in der der verwendete Leuchtstoff ein
Yttrium-Aluminium-Granat-Fluoreszenzmaterial enthält, das Y und Al enthält.
16. Lichtemittierende Diode nach Anspruch 14, in der der Leuchtstoff ein
Fluoreszenzmaterial der allgemeinen Formel (Re1-rSmr)3(Al1-sGas)5O12:Ce sein
kann, wobei 0 ≦ r < 1 und 0 ≦ s ≦ 1 und Re mindestens ein Material ausgewählt aus Y
und Gd ist.
17. Lichtemittierende Diode nach Anspruch 14, in der das Fluoreszenzmaterial durch die
allgemeine Formel (Y1-p-q-rGdpCeqSmr)3(Al11-sGas)5O12 dargestellt ist, in der 0 ≦
p ≦ 0,8, 0,003 ≦ q ≦ 0,2, 0,0003 ≦ r ≦ 0,08 und 0 ≦ s ≦ 1.
18. Lichtemittierende Diode nach Anspruch 15, in der der Leuchtstoff zwei oder mehr
durch Cerium aktivierte Yttrium-Aluminium-Granat-Fluoreszenzmaterialien
unterschiedlicher Zusammensetzung, darunter Y und Al, enthält.
19. Lichtemittierende Diode nach Anspruch 16, in der der Leuchtstoff zwei oder mehr
Fluoreszenzmaterialien unterschiedlicher Zusammensetzung der allgemeinen Formel
(Re1-rSmr)3(Al1-sGas)5O12:Ce enthält, wobei 0 ≦ r < 1 und 0 ≦ s ≦ 1 und Re
mindestens ein Material ausgewählt aus Y und Gd ist.
20. Lichtemittierende Diode nach Anspruch 14, in der der Leuchtstoff ein erstes
Fluoreszenzmaterial der allgemeinen Formel Y3(Al1-sGas)5O12:Ce und ein zweites
Fluoreszenzmaterial der allgemeinen Formel Re3Al5O12:Ce enthält, in der 0 ≦ s ≦ 1
und Re mindestens ein Material ausgewählt aus Y, Gd und La ist.
21. Lichtemittierende Diode nach Anspruch 18, in der der Leuchtstoff ein Yttrium-
Aluminium-Granat-Fluoreszenzmaterial enthält, das ein erstes Fluoreszenzmaterial
und ein zweites Fluoreszenzmaterial enthält, wobei ein Teil von Yttrium in dem ersten
und zweiten Fluoreszenzmaterial mit Gadoliunium in unterschiedlichen
Substitutionsgraden substituiert ist.
22. Lichtemittierende Diode nach Anspruch 14, in der der Hauptemissionspeak der
lichtemittierenden Komponente in den Bereich von 400 nm bis 530 nm gelegt ist und
die Hauptemissionswellenlänge des Leuchtstoffs so eingestellt ist, dass sie länger als
der Hauptemissionspeak der lichtemittierenden Komponente ist.
23. Lichtemittierende Diode nach Anspruch 1, in der der Hauptemissionspeak der
lichtemittierenden Komponente in den Bereich von 400 nm bis 530 nm gelegt ist und
die Hauptemissionswellenlänge des Leuchtstoffs so eingestellt ist, dass sie länger als
der Hauptemissionspeak der lichtemittierenden Komponente ist, wodurch auf Weiß
basierendes Licht ausgesandt werden kann.
24. Lichtemittierende Vorrichtung oder Diode gemäß einem der Ansprüche 1 bis 23, wobei
das durch Mischen des von dem lichtemittierenden Bauteil emittierten Lichts mit dem
von dem Leuchtstoff erzeugten Licht erhaltene Licht im wesentlichen längs des Ortes
der Schwarzkörperstrahlung im Farbtondiagramm auftritt.
25. Lichtemittierende Vorrichtung, umfassend ein lichtemittierendes Bauteil und einen
Leuchtstoff, der einen Teil des von dem lichtemittierenden Bauteil ausgesandten
Lichts absorbieren und Licht einer von der des absorbierten Lichts verschiedenen
Wellenlänge emittieren kann,
wobei weißes Licht, das durch Mischen des von dem lichtemittierenden Bauteil
emittierten Lichts mit dem von dem Leuchtstoff erzeugten Licht erhalten wird, im
wesentlichen längs des Ortes der Schwarzkörperstrahlung im Farbtondiagramm
auftritt.
26. Lichtemittierende Vorrichtung nach Anspruch 25, wobei das lichtemittierende Bauteil
eine blaue LED ist.
27. Lichtemittierende Vorrichtung nach Anspruch 25 oder 26, wobei ein Punkt der
Farbtonskala, der dem von dem lichtemittierenden Bauteil erzeugten Licht entspricht,
ein Punkt der Farbtonskala, der dem von dem Leuchtstoff erzeugten Licht entspricht
und eine gewisse Menge des Leuchtstoffs so eingestellt werden, dass weißes Licht
im wesentlichen längs des Ortes der Schwarzkörperstrahlung auftritt.
28. Lichtemittierende Vorrichtung nach einem der Ansprüche 25 bis 27, wobei das weiße
Licht eine Farbtemperatur von 8080 oder 4400 K aufweist.
29. Lichtemittierende Vorrichtung nach einem der Ansprüche 25 bis 28, wobei der
Hauptemissionspeak des lichtemittierenden Bauteils im Bereich von 400 nm bis 530 nm
liegt.
30. Lichtemittierende Vorrichtung nach einem der Ansprüche 25 bis 29, wobei der
Hauptemissionspeak des lichtemittierenden Bauteils im Bereich von 420 nm bis 490 nm
liegt.
31. Lichtemittierende Vorrichtung nach einem der Ansprüche 25 bis 30, wobei der
Hauptemissionspeak des lichtemittierenden Bauteils im Bereich von 450 nm bis 475 nm
liegt.
32. Lichtemittierende Vorrichtung nach einem der Ansprüche 25 bis 31, wobei die
Struktur des lichtemittierenden Bauteils eine Homostruktur, Heterostruktur oder eine
doppelte Heterostruktur ist, die einen MIS Übergang, einen PIN Übergang oder einen
PIN Übergang aufweist.
33. Lichtemittierende Vorrichtung nach einem der Ansprüche 25 bis 32, wobei das
lichtemittierende Bauteil eine aktive Schicht umfasst, die eine Einquantentopfstruktur
oder Mehrquantentopfstruktur aufweist.
34. Lichtemittierende Vorrichtung nach einem der Ansprüche 25 bis 33, wobei der
Leuchtstoff durch folgende Schritte hergestellt wird: Lösen von Seltenerdelementen in
Säure in stöchiometrischen Mengen, Mitausfällen der Lösung mit Oxalsäure zum
Erhalt eines Sediments, Brennen des Sediments zum Erhalt eines Oxids, und
Brennen einer Mischung aus dem genannten Oxid, einem Ammoniumfluorid und
Aluminiumoxid.
35. Lichtemittierende Vorrichtung nach einem der Ansprüche 25 bis 34, wobei ein
Emissisonspeak des Leuchtstoffes in den Bereich von 530 bis 570 nm gelegt ist.
36. Lichtemittierende Vorrichtung nach einem der Ansprüche 25 bis 35, bei der
das lichtemittierende Teil auf eine Kugelschale einer ersten Anordnung
aufgebracht ist, wobei besagte Kugelschale mit einem Überzugsmaterial
gefüllt ist, um das lichtemittierende Teil zu bedecken und worin das
lichtemittierende Teil zwei Elektroden aufweist, von denen eine mittels eines
leitenden Drahtes mit einer zweiten Anordnung verbunden ist, wobei das
besagte lichtemittierende Teil und die besagte Kugelschale und das
besagte Überzugsmaterial mit einem Formstoff bedeckt sind und die
besagte erste Anordnung und die besagte zweite Anordnung teilweise mit
diesem besagten Formstoff überzogen sind und der besagte Leuchtstoff
entweder in dem Formstoff oder in dem Überzugsmaterial oder in beiden,
dem Überzugsmaterial und dem Formstoff, enthalten sein kann.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19858596 | 1996-07-29 | ||
JP24433996 | 1996-09-17 | ||
JP24538196 | 1996-09-18 | ||
JP35900496 | 1996-12-27 | ||
JP8101097 | 1997-03-31 | ||
EP97933047A EP0936682B9 (de) | 1996-07-29 | 1997-07-29 | Licht-emittierende vorrichtung und anzeigevorrichtung |
Publications (1)
Publication Number | Publication Date |
---|---|
DE29724670U1 true DE29724670U1 (de) | 2002-09-19 |
Family
ID=27524906
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1997224764 Expired - Lifetime DE29724764U1 (de) | 1996-07-29 | 1997-07-29 | Lichtquellesystem |
DE1997602929 Expired - Lifetime DE69702929T4 (de) | 1996-07-29 | 1997-07-29 | Lichtemittierende vorrichtung und anzeigevorrichtung |
DE1997224458 Expired - Lifetime DE29724458U1 (de) | 1996-07-29 | 1997-07-29 | Lichtemittierende Vorrichtung und Anzeigegerät |
DE1997224670 Expired - Lifetime DE29724670U1 (de) | 1996-07-29 | 1997-07-29 | Lichtemittierende Vorrichtung und Diode |
DE1997224642 Expired - Lifetime DE29724642U1 (de) | 1996-07-29 | 1997-07-29 | Farbkonversions-Gußmaterial und Licht emittierende Vorrichtung |
DE1997224773 Expired - Lifetime DE29724773U1 (de) | 1996-07-29 | 1997-07-29 | Lichtemittierende Vorrichtung |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
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DE1997224764 Expired - Lifetime DE29724764U1 (de) | 1996-07-29 | 1997-07-29 | Lichtquellesystem |
DE1997602929 Expired - Lifetime DE69702929T4 (de) | 1996-07-29 | 1997-07-29 | Lichtemittierende vorrichtung und anzeigevorrichtung |
DE1997224458 Expired - Lifetime DE29724458U1 (de) | 1996-07-29 | 1997-07-29 | Lichtemittierende Vorrichtung und Anzeigegerät |
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DE1997224642 Expired - Lifetime DE29724642U1 (de) | 1996-07-29 | 1997-07-29 | Farbkonversions-Gußmaterial und Licht emittierende Vorrichtung |
DE1997224773 Expired - Lifetime DE29724773U1 (de) | 1996-07-29 | 1997-07-29 | Lichtemittierende Vorrichtung |
Country Status (19)
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US (25) | US5998925A (de) |
EP (14) | EP1271664B1 (de) |
JP (19) | JP3503139B2 (de) |
KR (7) | KR100549902B1 (de) |
CN (11) | CN1133218C (de) |
AT (1) | ATE195831T1 (de) |
AU (1) | AU720234B2 (de) |
BR (7) | BRPI9715264B1 (de) |
CA (4) | CA2479842C (de) |
DE (6) | DE29724764U1 (de) |
DK (9) | DK2276080T3 (de) |
ES (9) | ES2544690T3 (de) |
GR (1) | GR3034493T3 (de) |
HK (12) | HK1021073A1 (de) |
MY (1) | MY125748A (de) |
PT (5) | PT1429398E (de) |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102018217889A1 (de) | 2018-10-18 | 2020-04-23 | Osram Opto Semiconductors Gmbh | Gelber Leuchtstoff und Konversions-LED |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102018217889A1 (de) | 2018-10-18 | 2020-04-23 | Osram Opto Semiconductors Gmbh | Gelber Leuchtstoff und Konversions-LED |
DE102018217889B4 (de) | 2018-10-18 | 2023-09-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Gelber Leuchtstoff und Konversions-LED |
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