DE3161615D1 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
DE3161615D1
DE3161615D1 DE8181301084T DE3161615T DE3161615D1 DE 3161615 D1 DE3161615 D1 DE 3161615D1 DE 8181301084 T DE8181301084 T DE 8181301084T DE 3161615 T DE3161615 T DE 3161615T DE 3161615 D1 DE3161615 D1 DE 3161615D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181301084T
Other languages
English (en)
Inventor
Yoshitaka Sugawara
Tatsuya Kamei
Tetsuma Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd Nippon Telegraph And Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3161615D1 publication Critical patent/DE3161615D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
DE8181301084T 1980-03-19 1981-03-16 Semiconductor device Expired DE3161615D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3406680A JPS56131954A (en) 1980-03-19 1980-03-19 Semiconductor device

Publications (1)

Publication Number Publication Date
DE3161615D1 true DE3161615D1 (en) 1984-01-19

Family

ID=12403880

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181301084T Expired DE3161615D1 (en) 1980-03-19 1981-03-16 Semiconductor device

Country Status (5)

Country Link
US (1) US4419685A (de)
EP (1) EP0036319B1 (de)
JP (1) JPS56131954A (de)
CA (1) CA1145062A (de)
DE (1) DE3161615D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4804634A (en) * 1981-04-24 1989-02-14 National Semiconductor Corporation Integrated circuit lateral transistor structure
US4586243A (en) * 1983-01-14 1986-05-06 General Motors Corporation Method for more uniformly spacing features in a semiconductor monolithic integrated circuit
US4544940A (en) * 1983-01-14 1985-10-01 General Motors Corporation Method for more uniformly spacing features in a lateral bipolar transistor
GB2143082B (en) * 1983-07-06 1987-06-17 Standard Telephones Cables Ltd Bipolar lateral transistor
GB2148589B (en) * 1983-10-18 1987-04-23 Standard Telephones Cables Ltd Improvements in intergrated circuits
US4510676A (en) * 1983-12-06 1985-04-16 International Business Machines, Corporation Method of fabricating a lateral PNP transistor
DE3618166A1 (de) * 1986-05-30 1987-12-03 Telefunken Electronic Gmbh Lateraltransistor
JPS63312674A (ja) * 1987-06-16 1988-12-21 Nissan Motor Co Ltd 薄膜半導体装置
JPH0812865B2 (ja) * 1989-06-06 1996-02-07 株式会社東芝 バイポーラトランジスタとその製造方法
FR2649830B1 (fr) * 1989-07-13 1994-05-27 Sgs Thomson Microelectronics Structure de circuit integre cmos protege contre les decharges electrostatiques
FR2650122B1 (fr) * 1989-07-21 1991-11-08 Motorola Semiconducteurs Dispositif semi-conducteur a haute tension et son procede de fabrication
JP2507632B2 (ja) * 1989-10-18 1996-06-12 株式会社日立製作所 半導体装置
US5994739A (en) * 1990-07-02 1999-11-30 Kabushiki Kaisha Toshiba Integrated circuit device
DE59009155D1 (de) * 1990-11-12 1995-06-29 Siemens Ag Halbleiterbauelement für hohe Sperrspannung.
JP2741434B2 (ja) * 1990-11-26 1998-04-15 太平洋精工株式会社 ブロアモータ用抵抗器
US5646055A (en) * 1996-05-01 1997-07-08 Motorola, Inc. Method for making bipolar transistor
CN107946356B (zh) * 2017-03-02 2024-04-09 重庆中科渝芯电子有限公司 一种横向高压功率双极结型晶体管及其制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3302076A (en) * 1963-06-06 1967-01-31 Motorola Inc Semiconductor device with passivated junction
JPS516509B1 (de) * 1970-07-02 1976-02-28
JPS5218073B2 (de) * 1972-08-15 1977-05-19
JPS4979480A (de) * 1972-12-06 1974-07-31
JPS5522946B2 (de) * 1973-02-07 1980-06-19
US3873989A (en) * 1973-05-07 1975-03-25 Fairchild Camera Instr Co Double-diffused, lateral transistor structure
US3919005A (en) * 1973-05-07 1975-11-11 Fairchild Camera Instr Co Method for fabricating double-diffused, lateral transistor
JPS5240077A (en) * 1975-09-26 1977-03-28 Hitachi Ltd Process for production of lateral transistor
JPS5359376U (de) * 1976-10-20 1978-05-20
US4283236A (en) * 1979-09-19 1981-08-11 Harris Corporation Method of fabricating lateral PNP transistors utilizing selective diffusion and counter doping

Also Published As

Publication number Publication date
CA1145062A (en) 1983-04-19
US4419685A (en) 1983-12-06
JPS643347B2 (de) 1989-01-20
JPS56131954A (en) 1981-10-15
EP0036319B1 (de) 1983-12-14
EP0036319A1 (de) 1981-09-23

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: HITACHI, LTD. NIPPON TELEGRAPH AND TELEPHONE CORP.