DE3162416D1 - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
DE3162416D1
DE3162416D1 DE8181103606T DE3162416T DE3162416D1 DE 3162416 D1 DE3162416 D1 DE 3162416D1 DE 8181103606 T DE8181103606 T DE 8181103606T DE 3162416 T DE3162416 T DE 3162416T DE 3162416 D1 DE3162416 D1 DE 3162416D1
Authority
DE
Germany
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
semiconductor
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181103606T
Other languages
English (en)
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6306380A external-priority patent/JPS56159892A/ja
Priority claimed from JP6306280A external-priority patent/JPS56159891A/ja
Priority claimed from JP6306180A external-priority patent/JPS56160060A/ja
Priority claimed from JP14393280A external-priority patent/JPS5768062A/ja
Priority claimed from JP14393180A external-priority patent/JPS5767332A/ja
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Application granted granted Critical
Publication of DE3162416D1 publication Critical patent/DE3162416D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H03K19/09443—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096—Synchronous circuits, i.e. using clock signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354—Astable circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit
    • H03K3/356052—Bistable circuits using additional transistors in the input circuit using pass gates
    • H03K3/35606—Bistable circuits using additional transistors in the input circuit using pass gates with synchronous operation
DE8181103606T 1980-05-13 1981-05-11 Semiconductor integrated circuit device Expired DE3162416D1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP6306380A JPS56159892A (en) 1980-05-13 1980-05-13 Semiconductor integrated circuit device
JP6306280A JPS56159891A (en) 1980-05-13 1980-05-13 Semiconductor integrated circuit device
JP6306180A JPS56160060A (en) 1980-05-13 1980-05-13 Semiconductor integrated circuit device
JP14393280A JPS5768062A (en) 1980-10-15 1980-10-15 Semiconductor integrated circuit device
JP14393180A JPS5767332A (en) 1980-10-15 1980-10-15 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
DE3162416D1 true DE3162416D1 (en) 1984-04-05

Family

ID=27523751

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181103606T Expired DE3162416D1 (en) 1980-05-13 1981-05-11 Semiconductor integrated circuit device

Country Status (4)

Country Link
US (1) US4460835A (de)
EP (1) EP0039946B1 (de)
CA (1) CA1185665A (de)
DE (1) DE3162416D1 (de)

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JPS6159688A (ja) * 1984-08-31 1986-03-27 Hitachi Ltd 半導体集積回路装置
US4628215A (en) * 1984-09-17 1986-12-09 Texas Instruments Incorporated Drive circuit for substrate pump
US4754167A (en) * 1985-04-04 1988-06-28 Cecil Conkle Programmable reference voltage generator for a read only memory
EP0262357B1 (de) * 1986-09-30 1992-04-01 Siemens Aktiengesellschaft Integrierte Schaltung in komplementärer Schaltungstechnik mit einem Substratvorspannungs-Generator
US4752699A (en) * 1986-12-19 1988-06-21 International Business Machines Corp. On chip multiple voltage generation using a charge pump and plural feedback sense circuits
EP0297276B1 (de) * 1987-06-10 1992-03-18 Siemens Aktiengesellschaft Generatorschaltung
US6324426B1 (en) 1988-04-28 2001-11-27 Medtronic, Inc. Power consumption reduction in medical devices employing multiple supply voltages and clock frequency control
USRE40132E1 (en) 1988-06-17 2008-03-04 Elpida Memory, Inc. Large scale integrated circuit with sense amplifier circuits for low voltage operation
US5297097A (en) 1988-06-17 1994-03-22 Hitachi Ltd. Large scale integrated circuit for low voltage operation
JPH0817033B2 (ja) * 1988-12-08 1996-02-21 三菱電機株式会社 基板バイアス電位発生回路
KR920010749B1 (ko) * 1989-06-10 1992-12-14 삼성전자 주식회사 반도체 집적소자의 내부전압 변환회로
JPH04255989A (ja) * 1991-02-07 1992-09-10 Mitsubishi Electric Corp 半導体記憶装置および内部電圧発生方法
DE69231751T2 (de) * 1991-12-09 2001-06-28 Fujitsu Ltd Flash-speicher mit verbesserten löscheigenschaften und schaltung dafür
DE69328743T2 (de) * 1992-03-30 2000-09-07 Mitsubishi Electric Corp Halbleiteranordnung
US5461338A (en) * 1992-04-17 1995-10-24 Nec Corporation Semiconductor integrated circuit incorporated with substrate bias control circuit
US6031411A (en) * 1993-06-28 2000-02-29 Texas Instruments Incorporated Low power substrate bias circuit
US5493249A (en) * 1993-12-06 1996-02-20 Micron Technology, Inc. System powered with inter-coupled charge pumps
US6005423A (en) * 1994-02-10 1999-12-21 Xilinx, Inc. Low current power-on reset circuit
US5698877A (en) * 1995-10-31 1997-12-16 Gonzalez; Fernando Charge-pumping to increase electron collection efficiency
TW382670B (en) * 1996-11-21 2000-02-21 Hitachi Ltd Low power processor
JP4253052B2 (ja) * 1997-04-08 2009-04-08 株式会社東芝 半導体装置
DE19918590B4 (de) 1998-04-29 2006-06-08 Medtronic, Inc., Minneapolis Implantierbare medizinische Vorrichtung
US6167303A (en) * 1998-04-29 2000-12-26 Medtronic, Inc. Power consumption reduction in medical devices employing just-in-time clock
US6023641A (en) 1998-04-29 2000-02-08 Medtronic, Inc. Power consumption reduction in medical devices employing multiple digital signal processors
US6091987A (en) * 1998-04-29 2000-07-18 Medtronic, Inc. Power consumption reduction in medical devices by employing different supply voltages
US6223080B1 (en) 1998-04-29 2001-04-24 Medtronic, Inc. Power consumption reduction in medical devices employing multiple digital signal processors and different supply voltages
US6236888B1 (en) 1998-04-29 2001-05-22 Medtronic, Inc. Power consumption reduction in medical devices employing multiple supple voltages and clock frequency control
US6163721A (en) * 1998-04-29 2000-12-19 Medtronic, Inc. Power consumption reduction in medical devices by employing pipeline architecture
US6185454B1 (en) 1998-04-29 2001-02-06 Medtronic, Inc. Power consumption reduction in medical devices employing just-in-time voltage control
FR2783941B1 (fr) 1998-09-30 2004-03-12 St Microelectronics Sa Circuit de regulation d'une tension de sortie d'un dispositif a pompe de charges positives
US6496729B2 (en) 1998-10-28 2002-12-17 Medtronic, Inc. Power consumption reduction in medical devices employing multiple supply voltages and clock frequency control
US6438422B1 (en) * 1998-10-28 2002-08-20 Medtronic, Inc. Power dissipation reduction in medical devices using adiabatic logic
US6225852B1 (en) * 1999-10-01 2001-05-01 Advanced Micro Devices, Inc. Use of biased high threshold voltage transistor to eliminate standby current in low voltage integrated circuits
US6301146B1 (en) * 1999-12-23 2001-10-09 Michael Anthony Ang Static random access memory (RAM) systems and storage cell for same
US6777753B1 (en) * 2000-07-12 2004-08-17 The United States Of America As Represented By The Secretary Of The Navy CMOS devices hardened against total dose radiation effects
FR2816173B1 (fr) 2000-11-03 2002-12-27 Gilles Dubreuil Article pour fumeur de cigare
US20030173828A1 (en) * 2002-02-27 2003-09-18 Bachinski Thomas J. Standby power generation system, unit, and method
US7775966B2 (en) 2005-02-24 2010-08-17 Ethicon Endo-Surgery, Inc. Non-invasive pressure measurement in a fluid adjustable restrictive device
US7927270B2 (en) 2005-02-24 2011-04-19 Ethicon Endo-Surgery, Inc. External mechanical pressure sensor for gastric band pressure measurements
US7699770B2 (en) 2005-02-24 2010-04-20 Ethicon Endo-Surgery, Inc. Device for non-invasive measurement of fluid pressure in an adjustable restriction device
US7775215B2 (en) 2005-02-24 2010-08-17 Ethicon Endo-Surgery, Inc. System and method for determining implanted device positioning and obtaining pressure data
US8066629B2 (en) 2005-02-24 2011-11-29 Ethicon Endo-Surgery, Inc. Apparatus for adjustment and sensing of gastric band pressure
US7658196B2 (en) 2005-02-24 2010-02-09 Ethicon Endo-Surgery, Inc. System and method for determining implanted device orientation
US8016744B2 (en) 2005-02-24 2011-09-13 Ethicon Endo-Surgery, Inc. External pressure-based gastric band adjustment system and method
KR100700331B1 (ko) * 2005-08-17 2007-03-29 주식회사 하이닉스반도체 셀프 리프레쉬 전류 제어 장치
US8152710B2 (en) 2006-04-06 2012-04-10 Ethicon Endo-Surgery, Inc. Physiological parameter analysis for an implantable restriction device and a data logger
US8870742B2 (en) 2006-04-06 2014-10-28 Ethicon Endo-Surgery, Inc. GUI for an implantable restriction device and a data logger
US8187163B2 (en) 2007-12-10 2012-05-29 Ethicon Endo-Surgery, Inc. Methods for implanting a gastric restriction device
US8100870B2 (en) 2007-12-14 2012-01-24 Ethicon Endo-Surgery, Inc. Adjustable height gastric restriction devices and methods
US8142452B2 (en) 2007-12-27 2012-03-27 Ethicon Endo-Surgery, Inc. Controlling pressure in adjustable restriction devices
US8377079B2 (en) 2007-12-27 2013-02-19 Ethicon Endo-Surgery, Inc. Constant force mechanisms for regulating restriction devices
US8337389B2 (en) 2008-01-28 2012-12-25 Ethicon Endo-Surgery, Inc. Methods and devices for diagnosing performance of a gastric restriction system
US8192350B2 (en) 2008-01-28 2012-06-05 Ethicon Endo-Surgery, Inc. Methods and devices for measuring impedance in a gastric restriction system
US8591395B2 (en) 2008-01-28 2013-11-26 Ethicon Endo-Surgery, Inc. Gastric restriction device data handling devices and methods
US8221439B2 (en) 2008-02-07 2012-07-17 Ethicon Endo-Surgery, Inc. Powering implantable restriction systems using kinetic motion
US7844342B2 (en) 2008-02-07 2010-11-30 Ethicon Endo-Surgery, Inc. Powering implantable restriction systems using light
US8114345B2 (en) 2008-02-08 2012-02-14 Ethicon Endo-Surgery, Inc. System and method of sterilizing an implantable medical device
US8057492B2 (en) 2008-02-12 2011-11-15 Ethicon Endo-Surgery, Inc. Automatically adjusting band system with MEMS pump
US8591532B2 (en) 2008-02-12 2013-11-26 Ethicon Endo-Sugery, Inc. Automatically adjusting band system
US8034065B2 (en) 2008-02-26 2011-10-11 Ethicon Endo-Surgery, Inc. Controlling pressure in adjustable restriction devices
US8233995B2 (en) 2008-03-06 2012-07-31 Ethicon Endo-Surgery, Inc. System and method of aligning an implantable antenna
US8187162B2 (en) 2008-03-06 2012-05-29 Ethicon Endo-Surgery, Inc. Reorientation port
US9449655B1 (en) 2015-08-31 2016-09-20 Cypress Semiconductor Corporation Low standby power with fast turn on for non-volatile memory devices

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US4094012A (en) * 1976-10-01 1978-06-06 Intel Corporation Electrically programmable MOS read-only memory with isolated decoders
US4096584A (en) * 1977-01-31 1978-06-20 Intel Corporation Low power/high speed static ram
US4092548A (en) * 1977-03-15 1978-05-30 International Business Machines Corporation Substrate bias modulation to improve mosfet circuit performance
JPS53121562A (en) * 1977-03-31 1978-10-24 Toshiba Corp Mos integrated circuit device
JPS6042621B2 (ja) * 1977-03-31 1985-09-24 株式会社東芝 Ｍｏｓ集積回路装置
JPS5513566A (en) * 1978-07-17 1980-01-30 Hitachi Ltd Mis field effect semiconductor circuit device
JPS5626835A (en) * 1979-08-14 1981-03-16 Asahi Glass Co Ltd Preparation of omega-iodoacyl fluoride
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US4296340A (en) * 1979-08-27 1981-10-20 Intel Corporation Initializing circuit for MOS integrated circuits

Also Published As

Publication number Publication date
US4460835A (en) 1984-07-17
EP0039946A2 (de) 1981-11-18
CA1185665A (en) 1985-04-16
EP0039946A3 (en) 1982-03-17
EP0039946B1 (de) 1984-02-29

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Free format text: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZEL, W., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN

8339 Ceased/non-payment of the annual fee