DE3177070D1 - Mask programmable read-only memory stacked above a semiconductor substrate - Google Patents

Mask programmable read-only memory stacked above a semiconductor substrate

Info

Publication number
DE3177070D1
DE3177070D1 DE8181108172T DE3177070T DE3177070D1 DE 3177070 D1 DE3177070 D1 DE 3177070D1 DE 8181108172 T DE8181108172 T DE 8181108172T DE 3177070 T DE3177070 T DE 3177070T DE 3177070 D1 DE3177070 D1 DE 3177070D1
Authority
DE
Germany
Prior art keywords
semiconductor substrate
programmable read
stacked above
mask programmable
memory stacked
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181108172T
Other languages
English (en)
Inventor
Bruce Boyd Roesner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisys Corp
Original Assignee
Burroughs Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Burroughs Corp filed Critical Burroughs Corp
Application granted granted Critical
Publication of DE3177070D1 publication Critical patent/DE3177070D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/164—Three dimensional processing
DE8181108172T 1981-02-23 1981-10-10 Mask programmable read-only memory stacked above a semiconductor substrate Expired DE3177070D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/237,420 US4424579A (en) 1981-02-23 1981-02-23 Mask programmable read-only memory stacked above a semiconductor substrate

Publications (1)

Publication Number Publication Date
DE3177070D1 true DE3177070D1 (en) 1989-07-20

Family

ID=22893635

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181108172T Expired DE3177070D1 (en) 1981-02-23 1981-10-10 Mask programmable read-only memory stacked above a semiconductor substrate

Country Status (5)

Country Link
US (1) US4424579A (de)
EP (1) EP0058748B1 (de)
JP (1) JPS57186295A (de)
CA (1) CA1184300A (de)
DE (1) DE3177070D1 (de)

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US4516223A (en) * 1981-08-03 1985-05-07 Texas Instruments Incorporated High density bipolar ROM having a lateral PN diode as a matrix element and method of fabrication
DE3382294D1 (de) * 1982-02-22 1991-07-04 Toshiba Kawasaki Kk Mittel zum verhindern des durchbruchs einer isolierschicht in halbleiteranordnungen.
JPS58188155A (ja) * 1982-04-27 1983-11-02 Seiko Epson Corp ２層構造ｒｏｍ集積回路
WO1985001390A1 (en) * 1983-09-15 1985-03-28 Mosaic Systems, Inc. Wafer
US4898838A (en) * 1985-10-16 1990-02-06 Texas Instruments Incorporated Method for fabricating a poly emitter logic array
US5045501A (en) * 1986-08-25 1991-09-03 Hughes Aircraft Company Method of forming an integrated circuit structure with multiple common planes
US5367208A (en) * 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
US4796074A (en) * 1987-04-27 1989-01-03 Instant Circuit Corporation Method of fabricating a high density masked programmable read-only memory
JPH01308070A (ja) * 1988-06-07 1989-12-12 Matsushita Electric Ind Co Ltd 半導体記憶装置
US5210598A (en) * 1988-08-23 1993-05-11 Seiko Epson Corporation Semiconductor element having a resistance state transition region of two-layer structure
US5093711A (en) * 1988-10-14 1992-03-03 Seiko Epson Corporation Semiconductor device
JP2778977B2 (ja) * 1989-03-14 1998-07-23 株式会社東芝 半導体装置及びその製造方法
US5311039A (en) * 1990-04-24 1994-05-10 Seiko Epson Corporation PROM and ROM memory cells
JPH06505368A (ja) * 1991-01-17 1994-06-16 クロスポイント・ソルーションズ・インコーポレイテッド フィールドプログラム可能なゲートアレイに使用するための改良されたアンチヒューズ回路構造およびその製造方法
US5272666A (en) * 1991-10-18 1993-12-21 Lattice Semiconductor Corporation Programmable semiconductor antifuse structure and method of fabricating
US6329139B1 (en) 1995-04-25 2001-12-11 Discovery Partners International Automated sorting system for matrices with memory
US6017496A (en) * 1995-06-07 2000-01-25 Irori Matrices with memories and uses thereof
US5741462A (en) * 1995-04-25 1998-04-21 Irori Remotely programmable matrices with memories
US5751629A (en) * 1995-04-25 1998-05-12 Irori Remotely programmable matrices with memories
US6331273B1 (en) 1995-04-25 2001-12-18 Discovery Partners International Remotely programmable matrices with memories
US6416714B1 (en) 1995-04-25 2002-07-09 Discovery Partners International, Inc. Remotely programmable matrices with memories
US5874214A (en) * 1995-04-25 1999-02-23 Irori Remotely programmable matrices with memories
US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
US6956757B2 (en) * 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
DE10044842A1 (de) * 2000-09-11 2002-04-04 Siemens Ag Organischer Gleichrichter, Schaltung, RFID-Tag und Verwendung eines organischen Gleichrichters
US6933849B2 (en) 2002-07-09 2005-08-23 Fred Sawyer Method and apparatus for tracking objects and people
US7821080B2 (en) * 2005-07-15 2010-10-26 Guobiao Zhang N-ary three-dimensional mask-programmable read-only memory
WO2009061834A1 (en) * 2007-11-05 2009-05-14 Contour Semiconductor, Inc. Low-cost, high-density rectifier matrix memory
US8564070B2 (en) 2010-05-24 2013-10-22 Chengdu Haicun Ip Technology Llc Large bit-per-cell three-dimensional mask-programmable read-only memory
US9508395B2 (en) 2011-09-01 2016-11-29 HangZhou HaiCun Information Technology Co., Ltd. Three-dimensional one-time-programmable memory comprising off-die read/write-voltage generator
US9666300B2 (en) 2011-09-01 2017-05-30 XiaMen HaiCun IP Technology LLC Three-dimensional one-time-programmable memory comprising off-die address/data-translator
US9117493B2 (en) 2011-09-01 2015-08-25 Chengdu Haicun Ip Technology Llc Discrete three-dimensional memory comprising off-die address/data translator
US9305604B2 (en) 2011-09-01 2016-04-05 HangZhou HaiCun Information Technology Co., Ltd. Discrete three-dimensional vertical memory comprising off-die address/data-translator
US9024425B2 (en) 2011-09-01 2015-05-05 HangZhou HaiCun Information Technology Co., Ltd. Three-dimensional memory comprising an integrated intermediate-circuit die
US9299390B2 (en) 2011-09-01 2016-03-29 HangZhou HaiCun Informationa Technology Co., Ltd. Discrete three-dimensional vertical memory comprising off-die voltage generator
US8699257B2 (en) 2011-09-01 2014-04-15 HangZhou HaiCun Information Technology Co., Ltd. Three-dimensional writable printed memory
US9093129B2 (en) 2011-09-01 2015-07-28 Chengdu Haicun Ip Technology Llc Discrete three-dimensional memory comprising dice with different BEOL structures
US9396764B2 (en) 2011-09-01 2016-07-19 HangZhou HaiCun Information Technology Co., Ltd. Discrete three-dimensional memory
US9305605B2 (en) 2011-09-01 2016-04-05 Chengdu Haicun Ip Technology Llc Discrete three-dimensional vertical memory
US8890300B2 (en) 2011-09-01 2014-11-18 Chengdu Haicun Ip Technology Llc Discrete three-dimensional memory comprising off-die read/write-voltage generator
US8921991B2 (en) 2011-09-01 2014-12-30 Chengdu Haicun Ip Technology Llc Discrete three-dimensional memory
US9190412B2 (en) 2011-09-01 2015-11-17 HangZhou HaiCun Information Technology Co., Ltd. Three-dimensional offset-printed memory
US9558842B2 (en) 2011-09-01 2017-01-31 HangZhou HaiCun Information Technology Co., Ltd. Discrete three-dimensional one-time-programmable memory
US9123393B2 (en) 2011-09-01 2015-09-01 HangZhou KiCun nformation Technology Co. Ltd. Discrete three-dimensional vertical memory
US9559082B2 (en) 2011-09-01 2017-01-31 HangZhou HaiCun Information Technology Co., Ltd. Three-dimensional vertical memory comprising dice with different interconnect levels
US9001555B2 (en) 2012-03-30 2015-04-07 Chengdu Haicun Ip Technology Llc Small-grain three-dimensional memory
US9293509B2 (en) 2013-03-20 2016-03-22 HangZhou HaiCun Information Technology Co., Ltd. Small-grain three-dimensional memory
CN104978990B (zh) 2014-04-14 2017-11-10 成都海存艾匹科技有限公司 紧凑型三维存储器
US10199432B2 (en) 2014-04-14 2019-02-05 HangZhou HaiCun Information Technology Co., Ltd. Manufacturing methods of MOSFET-type compact three-dimensional memory
CN104979352A (zh) 2014-04-14 2015-10-14 成都海存艾匹科技有限公司 混合型三维印录存储器
US10079239B2 (en) 2014-04-14 2018-09-18 HangZhou HaiCun Information Technology Co., Ltd. Compact three-dimensional mask-programmed read-only memory
US10304495B2 (en) 2014-04-14 2019-05-28 Chengdu Haicun Ip Technology Llc Compact three-dimensional memory with semi-conductive address line portion
US10304553B2 (en) 2014-04-14 2019-05-28 HangZhou HaiCun Information Technology Co., Ltd. Compact three-dimensional memory with an above-substrate decoding stage
US10446193B2 (en) 2014-04-14 2019-10-15 HangZhou HaiCun Information Technology Co., Ltd. Mixed three-dimensional memory
US10211258B2 (en) 2014-04-14 2019-02-19 HangZhou HaiCun Information Technology Co., Ltd. Manufacturing methods of JFET-type compact three-dimensional memory
US11170863B2 (en) 2016-04-14 2021-11-09 Southern University Of Science And Technology Multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAM)
CN109102837A (zh) 2016-04-14 2018-12-28 杭州海存信息技术有限公司 含有哑字线的三维一次编程存储器
CN107316869A (zh) 2016-04-16 2017-11-03 成都海存艾匹科技有限公司 三维纵向一次编程存储器
US10490562B2 (en) 2016-04-16 2019-11-26 HangZhou HaiCun Information Technology Co., Ltd. Three-dimensional vertical one-time-programmable memory comprising multiple antifuse sub-layers
US10559574B2 (en) 2016-04-16 2020-02-11 HangZhou HaiCun Information Technology Co., Ltd. Three-dimensional vertical one-time-programmable memory comprising Schottky diodes
US10566388B2 (en) 2018-05-27 2020-02-18 HangZhou HaiCun Information Technology Co., Ltd. Three-dimensional vertical memory

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US3749987A (en) * 1971-08-09 1973-07-31 Ibm Semiconductor device embodying field effect transistors and schottky barrier diodes
US3906540A (en) * 1973-04-02 1975-09-16 Nat Semiconductor Corp Metal-silicide Schottky diode employing an aluminum connector
CA1135854A (en) * 1977-09-30 1982-11-16 Michel Moussie Programmable read only memory cell
JPS5457879A (en) * 1977-10-15 1979-05-10 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor
JPS5498536A (en) * 1978-01-23 1979-08-03 Nippon Telegr & Teleph Corp <Ntt> Memory unit of polycrystal silicon resistor
US4233671A (en) * 1979-01-05 1980-11-11 Stanford University Read only memory and integrated circuit and method of programming by laser means

Also Published As

Publication number Publication date
JPS57186295A (en) 1982-11-16
EP0058748B1 (de) 1989-06-14
CA1184300A (en) 1985-03-19
US4424579A (en) 1984-01-03
EP0058748A1 (de) 1982-09-01
JPH0320904B2 (de) 1991-03-20

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee