DE3272087D1 - High speed plasma etching system - Google Patents

High speed plasma etching system

Info

Publication number
DE3272087D1
DE3272087D1 DE8282102911T DE3272087T DE3272087D1 DE 3272087 D1 DE3272087 D1 DE 3272087D1 DE 8282102911 T DE8282102911 T DE 8282102911T DE 3272087 T DE3272087 T DE 3272087T DE 3272087 D1 DE3272087 D1 DE 3272087D1
Authority
DE
Germany
Prior art keywords
high speed
plasma etching
etching system
speed plasma
speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282102911T
Other languages
English (en)
Inventor
George N Steinberg
Alan R Reinberg
Jean Dalle Ave
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applera Corp
Original Assignee
Perkin Elmer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Perkin Elmer Corp filed Critical Perkin Elmer Corp
Application granted granted Critical
Publication of DE3272087D1 publication Critical patent/DE3272087D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
DE8282102911T 1981-05-06 1982-04-05 High speed plasma etching system Expired DE3272087D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/260,668 US4367114A (en) 1981-05-06 1981-05-06 High speed plasma etching system

Publications (1)

Publication Number Publication Date
DE3272087D1 true DE3272087D1 (en) 1986-08-28

Family

ID=22990125

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282102911T Expired DE3272087D1 (en) 1981-05-06 1982-04-05 High speed plasma etching system

Country Status (4)

Country Link
US (1) US4367114A (de)
EP (1) EP0064163B1 (de)
JP (1) JPS57185982A (de)
DE (1) DE3272087D1 (de)

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JPS5816078A (ja) * 1981-07-17 1983-01-29 Toshiba Corp プラズマエツチング装置
US4473455A (en) * 1981-12-21 1984-09-25 At&T Bell Laboratories Wafer holding apparatus and method
US4718976A (en) * 1982-03-31 1988-01-12 Fujitsu Limited Process and apparatus for plasma treatment
US4585920A (en) * 1982-05-21 1986-04-29 Tegal Corporation Plasma reactor removable insert
JPS607132A (ja) * 1983-06-25 1985-01-14 Toshiba Corp ドライエツチング装置
JPS6039832A (ja) * 1983-08-12 1985-03-01 Fujitsu Ltd プラズマ処理装置
US4439261A (en) * 1983-08-26 1984-03-27 International Business Machines Corporation Composite pallet
US4496423A (en) * 1983-11-14 1985-01-29 Gca Corporation Gas feed for reactive ion etch system
JPS60201632A (ja) * 1984-03-27 1985-10-12 Anelva Corp ドライエツチング装置
US4534816A (en) 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
US4595452A (en) * 1985-03-11 1986-06-17 Oerlikon-Buhrle U.S.A. Inc. Method and apparatus for plasma etching
DE3666111D1 (en) * 1985-03-15 1989-11-09 Denton Vacuum Inc External plasma gun
US4793975A (en) * 1985-05-20 1988-12-27 Tegal Corporation Plasma Reactor with removable insert
JPS61278144A (ja) * 1985-06-01 1986-12-09 Anelva Corp プラズマ処理装置
JPS6269620A (ja) * 1985-09-24 1987-03-30 Anelva Corp プラズマ処理装置
JPS62252942A (ja) * 1986-04-17 1987-11-04 Tokai Carbon Co Ltd プラズマエツチング用電極板
NL8601824A (nl) * 1986-07-11 1988-02-01 Hauzer Holding Werkwijze en inrichting voor het met een geleidend plasmakanaal ontsteken van een boog.
EP0258698B1 (de) * 1986-09-05 1997-11-12 Hitachi, Ltd. Trockenes Ätzverfahren
US4904621A (en) * 1987-07-16 1990-02-27 Texas Instruments Incorporated Remote plasma generation process using a two-stage showerhead
US4911812A (en) * 1987-10-21 1990-03-27 Hitachi, Ltd. Plasma treating method and apparatus therefor
KR0129663B1 (ko) * 1988-01-20 1998-04-06 고다까 토시오 에칭 장치 및 방법
US5262029A (en) * 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
FR2633452B1 (fr) * 1988-06-28 1990-11-02 Doue Julien Dispositif de support pour un substrat mince, notamment en un materiau semiconducteur
JPH07114198B2 (ja) * 1989-10-02 1995-12-06 東海カーボン株式会社 プラズマエッチング用電極板
DE4022708A1 (de) * 1990-07-17 1992-04-02 Balzers Hochvakuum Aetz- oder beschichtungsanlagen
US5074456A (en) 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
JP3032362B2 (ja) * 1991-11-22 2000-04-17 東京応化工業株式会社 同軸型プラズマ処理装置
CH686254A5 (de) * 1992-07-27 1996-02-15 Balzers Hochvakuum Verfahren zur Einstellung der Bearbeitungsratenverteilung sowie Aetz- oder Plasma-CVD-Anlage zu dessen Ausfuehrung.
IL107827A0 (en) * 1992-12-08 1994-04-12 Hughes Aircraft Co Plasma pressure control assembly
US5588827A (en) * 1993-12-17 1996-12-31 Brooks Automation Inc. Passive gas substrate thermal conditioning apparatus and method
JPH09506744A (ja) * 1993-12-17 1997-06-30 ブルックス オートメーション インコーポレイテッド ウェハの加熱冷却装置
JPH08153682A (ja) * 1994-11-29 1996-06-11 Nec Corp プラズマｃｖｄ装置
US5891350A (en) 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
JP3257328B2 (ja) * 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US5595602A (en) * 1995-08-14 1997-01-21 Motorola, Inc. Diffuser for uniform gas distribution in semiconductor processing and method for using the same
US5976309A (en) * 1996-12-17 1999-11-02 Lsi Logic Corporation Electrode assembly for plasma reactor
US6079355A (en) * 1997-02-11 2000-06-27 United Microelectronics Corp. Alignment aid for an electrode plate assembly
WO2000026939A1 (en) 1998-10-29 2000-05-11 Applied Materials, Inc. Apparatus for coupling power through a workpiece in a semiconductor wafer processing system
JP3744726B2 (ja) 1999-06-08 2006-02-15 信越化学工業株式会社 シリコン電極板
US6863835B1 (en) 2000-04-25 2005-03-08 James D. Carducci Magnetic barrier for plasma in chamber exhaust
WO2002014810A2 (en) * 2000-08-10 2002-02-21 Tokyo Electron Limited Method and apparatus for tuning a plasma reactor chamber
US6564811B2 (en) * 2001-03-26 2003-05-20 Intel Corporation Method of reducing residue deposition onto ash chamber base surfaces
JP2003007682A (ja) * 2001-06-25 2003-01-10 Matsushita Electric Ind Co Ltd プラズマ処理装置用の電極部材
US6963043B2 (en) * 2002-08-28 2005-11-08 Tokyo Electron Limited Asymmetrical focus ring
EP1662022A4 (de) * 2003-06-11 2008-10-01 Mitsubishi Electric Corp Vorrichtung und verfahren zum beschichten mittels elektrischer entladung
DE102004029959B4 (de) * 2004-06-21 2010-08-19 Infineon Technologies Ag Gasdurchlässige Plasmaelektrode, Verfahren zum Herstellen der gasdurchlässigen Plasmaelektrode und Parallelplatten-Reaktor
US7845309B2 (en) * 2004-07-13 2010-12-07 Nordson Corporation Ultra high speed uniform plasma processing system
US7552521B2 (en) * 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) * 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
US20060225654A1 (en) * 2005-03-29 2006-10-12 Fink Steven T Disposable plasma reactor materials and methods
EP2654070A1 (de) 2012-04-16 2013-10-23 INDEOtec SA Kapazitiv gekoppelter Plasmareaktor für Dünnfilmablagerung
CN104969848A (zh) * 2015-06-18 2015-10-14 爱盛生物科技（上海）有限公司 一种复合式无土栽培灌溉系统

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US3356912A (en) * 1964-10-16 1967-12-05 Gen Electric Porous electrode
US3503557A (en) * 1966-05-11 1970-03-31 Air Reduction Means for introducing gas to oxygen stream
US3984301A (en) * 1973-08-11 1976-10-05 Nippon Electric Varian, Ltd. Sputter-etching method employing fluorohalogenohydrocarbon etching gas and a planar electrode for a glow discharge
US4230515A (en) * 1978-07-27 1980-10-28 Davis & Wilder, Inc. Plasma etching apparatus
US4253907A (en) * 1979-03-28 1981-03-03 Western Electric Company, Inc. Anisotropic plasma etching
US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
US4307283A (en) * 1979-09-27 1981-12-22 Eaton Corporation Plasma etching apparatus II-conical-shaped projection
US4270999A (en) * 1979-09-28 1981-06-02 International Business Machines Corporation Method and apparatus for gas feed control in a dry etching process

Also Published As

Publication number Publication date
EP0064163A3 (en) 1983-07-27
EP0064163B1 (de) 1986-07-23
EP0064163A2 (de) 1982-11-10
JPH0144791B2 (de) 1989-09-29
JPS57185982A (en) 1982-11-16
US4367114A (en) 1983-01-04

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8365 Fully valid after opposition proceedings
8339 Ceased/non-payment of the annual fee