DE3274698D1 - Method of producing a bipolar transistor - Google Patents

Method of producing a bipolar transistor

Info

Publication number
DE3274698D1
DE3274698D1 DE8282305023T DE3274698T DE3274698D1 DE 3274698 D1 DE3274698 D1 DE 3274698D1 DE 8282305023 T DE8282305023 T DE 8282305023T DE 3274698 T DE3274698 T DE 3274698T DE 3274698 D1 DE3274698 D1 DE 3274698D1
Authority
DE
Germany
Prior art keywords
producing
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282305023T
Other languages
English (en)
Inventor
Hiroshi Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3274698D1 publication Critical patent/DE3274698D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/01—Bipolar transistors-ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/04—Dopants, special
DE8282305023T 1981-09-28 1982-09-23 Method of producing a bipolar transistor Expired DE3274698D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56151987A JPS5866359A (ja) 1981-09-28 1981-09-28 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
DE3274698D1 true DE3274698D1 (en) 1987-01-22

Family

ID=15530578

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282305023T Expired DE3274698D1 (en) 1981-09-28 1982-09-23 Method of producing a bipolar transistor

Country Status (4)

Country Link
US (1) US4590666A (de)
EP (1) EP0076105B1 (de)
JP (1) JPS5866359A (de)
DE (1) DE3274698D1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2549293B1 (fr) * 1983-07-13 1986-10-10 Silicium Semiconducteur Ssc Transistor bipolaire haute frequence et son procede de fabrication
JPS6080267A (ja) * 1983-10-07 1985-05-08 Toshiba Corp 半導体集積回路装置の製造方法
JPS6146063A (ja) * 1984-08-10 1986-03-06 Hitachi Ltd 半導体装置の製造方法
JPS61268065A (ja) * 1985-05-23 1986-11-27 Matsushita Electronics Corp 半導体装置
US4721682A (en) * 1985-09-25 1988-01-26 Monolithic Memories, Inc. Isolation and substrate connection for a bipolar integrated circuit
JPH0622238B2 (ja) * 1985-10-02 1994-03-23 沖電気工業株式会社 バイポ−ラ型半導体集積回路装置の製造方法
JPS62290173A (ja) * 1986-06-09 1987-12-17 Oki Electric Ind Co Ltd 半導体集積回路装置の製造方法
US4782030A (en) * 1986-07-09 1988-11-01 Kabushiki Kaisha Toshiba Method of manufacturing bipolar semiconductor device
JPS63107167A (ja) * 1986-10-24 1988-05-12 Oki Electric Ind Co Ltd 半導体集積回路装置の製造方法
US4740478A (en) * 1987-01-30 1988-04-26 Motorola Inc. Integrated circuit method using double implant doping
US5067002A (en) * 1987-01-30 1991-11-19 Motorola, Inc. Integrated circuit structures having polycrystalline electrode contacts
US4837176A (en) * 1987-01-30 1989-06-06 Motorola Inc. Integrated circuit structures having polycrystalline electrode contacts and process
JPS63134885U (de) * 1987-02-13 1988-09-05
GB2218565B (en) * 1988-05-10 1992-04-01 Stc Plc Varicap diode structure
US5236851A (en) * 1988-07-14 1993-08-17 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor devices
JPH0226032A (ja) * 1988-07-14 1990-01-29 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH0817180B2 (ja) * 1989-06-27 1996-02-21 株式会社東芝 半導体装置の製造方法
JP3393544B2 (ja) * 1997-02-26 2003-04-07 シャープ株式会社 半導体装置の製造方法
JP2001217317A (ja) * 2000-02-07 2001-08-10 Sony Corp 半導体装置およびその製造方法
DE202010000042U1 (de) 2010-01-14 2010-06-02 Papiersackfabrik Tenax Gmbh & Co. Kg Ventilsack mit Entlüftungsvorrichtung
DE202013102644U1 (de) 2013-06-19 2013-07-24 Papiersackfabrik Tenax Gmbh & Co. Kg Ventilsack mit Entlüftungsvorrichtungen
USD848384S1 (en) * 2017-08-17 2019-05-14 Epistar Corporation Transistor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1934820A1 (de) * 1969-07-09 1971-01-14 Siemens Ag Verfahren zum Herstellen eines Germanium-Planartransistors
US3686080A (en) * 1971-07-21 1972-08-22 Rca Corp Method of fabrication of semiconductor devices
JPS532129B2 (de) * 1973-07-23 1978-01-25
US4054484A (en) * 1975-10-23 1977-10-18 Bell Telephone Laboratories, Incorporated Method of forming crossover connections
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
NL7900280A (nl) * 1979-01-15 1980-07-17 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
US4309812A (en) * 1980-03-03 1982-01-12 International Business Machines Corporation Process for fabricating improved bipolar transistor utilizing selective etching
US4318751A (en) * 1980-03-13 1982-03-09 International Business Machines Corporation Self-aligned process for providing an improved high performance bipolar transistor
US4319932A (en) * 1980-03-24 1982-03-16 International Business Machines Corporation Method of making high performance bipolar transistor with polysilicon base contacts
US4381953A (en) * 1980-03-24 1983-05-03 International Business Machines Corporation Polysilicon-base self-aligned bipolar transistor process
US4322883A (en) * 1980-07-08 1982-04-06 International Business Machines Corporation Self-aligned metal process for integrated injection logic integrated circuits
FR2508704B1 (fr) * 1981-06-26 1985-06-07 Thomson Csf Procede de fabrication de transistors bipolaires integres de tres petites dimensions
JPS5946105B2 (ja) * 1981-10-27 1984-11-10 日本電信電話株式会社 バイポ−ラ型トランジスタ装置及びその製法

Also Published As

Publication number Publication date
EP0076105A2 (de) 1983-04-06
JPS5866359A (ja) 1983-04-20
EP0076105A3 (en) 1984-08-01
US4590666A (en) 1986-05-27
JPS6152584B2 (de) 1986-11-13
EP0076105B1 (de) 1986-12-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee