DE3279207D1 - Method of etching polyimide - Google Patents
Method of etching polyimideInfo
- Publication number
- DE3279207D1 DE3279207D1 DE8282106403T DE3279207T DE3279207D1 DE 3279207 D1 DE3279207 D1 DE 3279207D1 DE 8282106403 T DE8282106403 T DE 8282106403T DE 3279207 T DE3279207 T DE 3279207T DE 3279207 D1 DE3279207 D1 DE 3279207D1
- Authority
- DE
- Germany
- Prior art keywords
- etching polyimide
- polyimide
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
- B26F3/00—Severing by means other than cutting; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/299,370 US4353778A (en) | 1981-09-04 | 1981-09-04 | Method of etching polyimide |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3279207D1 true DE3279207D1 (en) | 1988-12-15 |
Family
ID=23154488
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282106403T Expired DE3279207D1 (en) | 1981-09-04 | 1982-07-16 | Method of etching polyimide |
Country Status (5)
Country | Link |
---|---|
US (1) | US4353778A (de) |
EP (1) | EP0073910B1 (de) |
JP (1) | JPS5843453A (de) |
CA (1) | CA1155736A (de) |
DE (1) | DE3279207D1 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59182531A (ja) * | 1983-04-01 | 1984-10-17 | Hitachi Micro Comput Eng Ltd | 半導体装置における絶縁膜加工法 |
US4656050A (en) * | 1983-11-30 | 1987-04-07 | International Business Machines Corporation | Method of producing electronic components utilizing cured vinyl and/or acetylene terminated copolymers |
US4699803A (en) * | 1983-11-30 | 1987-10-13 | International Business Machines Corporation | Method for forming electrical components comprising cured vinyl and/or acetylene terminated copolymers |
US4606998A (en) * | 1985-04-30 | 1986-08-19 | International Business Machines Corporation | Barrierless high-temperature lift-off process |
GB8523373D0 (en) * | 1985-09-21 | 1985-10-23 | Stc Plc | Via profiling in integrated circuits |
JPH0727217B2 (ja) * | 1985-09-30 | 1995-03-29 | 松下電子工業株式会社 | 基板上へのレジストパタ−ン形成方法 |
US4830706A (en) * | 1986-10-06 | 1989-05-16 | International Business Machines Corporation | Method of making sloped vias |
JPH0626201B2 (ja) * | 1987-10-15 | 1994-04-06 | 富士通株式会社 | 半導体装置の製造方法 |
US4883744A (en) * | 1988-05-17 | 1989-11-28 | International Business Machines Corporation | Forming a polymide pattern on a substrate |
US4908096A (en) * | 1988-06-24 | 1990-03-13 | Allied-Signal Inc. | Photodefinable interlevel dielectrics |
US4846929A (en) * | 1988-07-13 | 1989-07-11 | Ibm Corporation | Wet etching of thermally or chemically cured polyimide |
US4857143A (en) * | 1988-12-16 | 1989-08-15 | International Business Machines Corp. | Wet etching of cured polyimide |
US5242713A (en) * | 1988-12-23 | 1993-09-07 | International Business Machines Corporation | Method for conditioning an organic polymeric material |
GB2226991A (en) * | 1989-01-13 | 1990-07-18 | Ibm | Etching organic polymeric materials |
US5217849A (en) * | 1989-08-28 | 1993-06-08 | Sumitomo Metal Mining Company Limited | Process for making a two-layer film carrier |
US5470693A (en) * | 1992-02-18 | 1995-11-28 | International Business Machines Corporation | Method of forming patterned polyimide films |
JPH05279752A (ja) * | 1992-03-31 | 1993-10-26 | Kawasaki Steel Corp | 薄帯の連続焼鈍方法及び装置 |
US6221567B1 (en) * | 1998-01-14 | 2001-04-24 | Fujitsu Limited | Method of patterning polyamic acid layers |
US6423907B1 (en) | 1998-02-09 | 2002-07-23 | Tessera, Inc. | Components with releasable leads |
TWI270965B (en) * | 2004-10-14 | 2007-01-11 | Advanced Semiconductor Eng | Manufacturing method of passivation layer on wafer and manufacturing method of bumps on wafer |
US20100071765A1 (en) * | 2008-09-19 | 2010-03-25 | Peter Cousins | Method for fabricating a solar cell using a direct-pattern pin-hole-free masking layer |
TW201026513A (en) * | 2009-01-08 | 2010-07-16 | Univ Nat Cheng Kung | Imprinting process of polyimide |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3767493A (en) * | 1971-06-17 | 1973-10-23 | Ibm | Two-step photo-etching method for semiconductors |
US4113550A (en) * | 1974-08-23 | 1978-09-12 | Hitachi, Ltd. | Method for fabricating semiconductor device and etchant for polymer resin |
DE2638799C3 (de) * | 1976-08-27 | 1981-12-03 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zur Verbesserung der Haftung von metallischen Leiterzügen auf Polyimidschichten in integrierten Schaltungen |
-
1981
- 1981-09-04 US US06/299,370 patent/US4353778A/en not_active Expired - Lifetime
-
1982
- 1982-06-15 JP JP57101480A patent/JPS5843453A/ja active Granted
- 1982-07-15 CA CA000407334A patent/CA1155736A/en not_active Expired
- 1982-07-16 DE DE8282106403T patent/DE3279207D1/de not_active Expired
- 1982-07-16 EP EP82106403A patent/EP0073910B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CA1155736A (en) | 1983-10-25 |
JPS5843453A (ja) | 1983-03-14 |
EP0073910A2 (de) | 1983-03-16 |
US4353778A (en) | 1982-10-12 |
EP0073910A3 (en) | 1986-03-19 |
JPH0145904B2 (de) | 1989-10-05 |
EP0073910B1 (de) | 1988-11-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |