DE3308365C2 - - Google Patents
Info
- Publication number
- DE3308365C2 DE3308365C2 DE3308365A DE3308365A DE3308365C2 DE 3308365 C2 DE3308365 C2 DE 3308365C2 DE 3308365 A DE3308365 A DE 3308365A DE 3308365 A DE3308365 A DE 3308365A DE 3308365 C2 DE3308365 C2 DE 3308365C2
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- acoustic wave
- surface acoustic
- wave
- axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 94
- 238000010897 surface acoustic wave method Methods 0.000 claims description 88
- 239000013078 crystal Substances 0.000 claims description 41
- 229910052594 sapphire Inorganic materials 0.000 claims description 23
- 239000010980 sapphire Substances 0.000 claims description 23
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 15
- 230000010287 polarization Effects 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 229910052710 silicon Inorganic materials 0.000 description 27
- 239000010703 silicon Substances 0.000 description 27
- 230000008878 coupling Effects 0.000 description 21
- 238000010168 coupling process Methods 0.000 description 21
- 238000005859 coupling reaction Methods 0.000 description 21
- 230000008859 change Effects 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000009826 distribution Methods 0.000 description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000001850 reproductive effect Effects 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
Description
- 1. Ein einteiliger Aufbau nur aus einem piezoelektrischen Substrat (piezoelektrisches Einkristallsubstrat, piezoelektrisches Keramiksubstrat, usw.);
- 2. Ein Schichtaufbau mit einem piezoelektrischen Film, der auf einem nicht piezoelektrischen Substrat niedergeschlagen ist;
- 3. ein Schichtaufbau mit einem piezoelektrischen Film, der auf einem Halbleitersubstrat niedergeschlagen ist.
- 1. Da es schwierig ist, eine gute Qualität des Filmes zu erzielen, entstehen Vorrichtungen mit insbesondere minderwertigen piezoelektrischen Eigenschaften.
- 2. Die Fortpflanzungsverluste der akustischen Oberflächenwelle sind im Hochfrequenzbereich groß.
- 3. Die Streuung der Fortpflanzungscharakteristik der akustischen Oberflächenwelle ist groß.
- 4. Es ist schwierig, das Änderungsverhältnis (1/τ) · (∂τ/∂T) der Verzögerungszeit τ der akustischen Oberflächenwelle in Abhängigkeit von einer Änderung der Temperatur (T ist die Umgebungstemperatur) zu steuern.
- 1. Aufgrund der hohen Geschwindigkeit der akustischen Oberflächenwelle ist die Wellenlänge im Hochfrequenzband groß, was die Herstellung der kammförmigen Elektroden erleichtert.
- 2. Aufgrund des kleinen Frequenzänderungsverhältnisses in Abhängigkeit von der Änderung der Filmstärke ist es leicht, Vorrichtungen herzustellen, die sich für das gewünschte Frequenzband eignen, was zu einer guten Produktivität und zur Verminderung der Kosten führt.
- 3. Es istmöglich, die Verzögerungszeit der akustische Oberflächenwellen bildenden Vorrichtung nahezu gleich Null zu halten.
- 4. Der AlN-Film mit guter Isolierung kann leicht ausgebildet werden. Weiterhin läßt sich ein einkristalliner epitaxialer AlN-Film leicht nach dem MO-CVD-Verfahren ausbilden.
Claims (4)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3348366A DE3348366C2 (de) | 1982-03-11 | 1983-03-09 | Akustische Oberflächenwellen bildende Vorrichtung |
DE3348369A DE3348369C2 (de) | 1982-03-11 | 1983-03-09 | Akustische Oberflächenwellen ausbildende Vorrichtung |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3923982A JPH0247888B2 (ja) | 1982-03-11 | 1982-03-11 | Danseihyomenhasoshi |
JP3924082A JPS58156217A (ja) | 1982-03-11 | 1982-03-11 | 弾性表面波素子 |
JP3923882A JPS58156215A (ja) | 1982-03-11 | 1982-03-11 | 弾性表面波素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3308365A1 DE3308365A1 (de) | 1983-09-15 |
DE3308365C2 true DE3308365C2 (de) | 1992-10-15 |
Family
ID=27290081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3308365A Granted DE3308365A1 (de) | 1982-03-11 | 1983-03-09 | Akustische oberflaechenwellen bildende vorrichtung |
Country Status (5)
Country | Link |
---|---|
US (1) | US4511816A (de) |
DE (1) | DE3308365A1 (de) |
FR (1) | FR2523382B1 (de) |
GB (1) | GB2120037B (de) |
NL (1) | NL8300879A (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4417224A1 (de) * | 1993-05-18 | 1994-11-24 | Sanyo Electric Co | Akustische Oberflächenwellenvorrichtung und Verfahren zu ihrer Herstellung |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5964908A (ja) * | 1982-10-05 | 1984-04-13 | Nobuo Mikoshiba | 弾性表面波素子 |
JPS59231911A (ja) * | 1983-06-14 | 1984-12-26 | Clarion Co Ltd | 表面弾性波素子 |
JPS60119114A (ja) * | 1983-11-30 | 1985-06-26 | Murata Mfg Co Ltd | 表面波装置 |
JPS6382100A (ja) * | 1986-09-26 | 1988-04-12 | Hitachi Ltd | 圧電素子およびその製造方法 |
KR970004619B1 (ko) * | 1987-10-19 | 1997-03-29 | 상요덴기 가부시끼가이샤 | 탄성 표면파 소자 |
US5235233A (en) * | 1988-03-17 | 1993-08-10 | Fanuc Ltd. | Surface acoustic wave device |
JPH0388406A (ja) * | 1989-04-11 | 1991-04-12 | Sanyo Electric Co Ltd | 弾性表面波素子 |
JPH0314305A (ja) * | 1989-06-13 | 1991-01-23 | Murata Mfg Co Ltd | 弾性表面波装置の製造方法 |
JPH0340510A (ja) * | 1989-07-06 | 1991-02-21 | Murata Mfg Co Ltd | 弾性表面波装置 |
US4952832A (en) * | 1989-10-24 | 1990-08-28 | Sumitomo Electric Industries, Ltd. | Surface acoustic wave device |
US5571603A (en) * | 1994-02-25 | 1996-11-05 | Sumitomo Electric Industries, Ltd. | Aluminum nitride film substrate and process for producing same |
US5576589A (en) * | 1994-10-13 | 1996-11-19 | Kobe Steel Usa, Inc. | Diamond surface acoustic wave devices |
EP0762640B1 (de) * | 1995-09-01 | 2001-02-14 | Murata Manufacturing Co., Ltd. | Akustische Oberflächenwellenanordnung |
JP3416470B2 (ja) * | 1996-07-18 | 2003-06-16 | 三洋電機株式会社 | 弾性表面波素子 |
US6239536B1 (en) * | 1998-09-08 | 2001-05-29 | Tfr Technologies, Inc. | Encapsulated thin-film resonator and fabrication method |
DE19913733A1 (de) * | 1999-03-26 | 2000-09-28 | Mannesmann Vdo Ag | Reifendrucksensor |
US6518637B1 (en) | 1999-04-08 | 2003-02-11 | Wayne State University | Cubic (zinc-blende) aluminum nitride |
US6953977B2 (en) * | 2000-02-08 | 2005-10-11 | Boston Microsystems, Inc. | Micromechanical piezoelectric device |
US6627965B1 (en) | 2000-02-08 | 2003-09-30 | Boston Microsystems, Inc. | Micromechanical device with an epitaxial layer |
US7043129B2 (en) * | 2000-06-16 | 2006-05-09 | Wayne State University | Wide bandgap semiconductor waveguide structures |
US6848295B2 (en) * | 2002-04-17 | 2005-02-01 | Wayne State University | Acoustic wave sensor apparatus, method and system using wide bandgap materials |
JP3801083B2 (ja) * | 2001-06-06 | 2006-07-26 | 株式会社村田製作所 | 弾性表面波装置 |
US7198671B2 (en) * | 2001-07-11 | 2007-04-03 | Matsushita Electric Industrial Co., Ltd. | Layered substrates for epitaxial processing, and device |
US6853075B2 (en) * | 2003-01-28 | 2005-02-08 | Wayne State University | Self-assembled nanobump array stuctures and a method to fabricate such structures |
US20040144927A1 (en) * | 2003-01-28 | 2004-07-29 | Auner Gregory W. | Microsystems arrays for digital radiation imaging and signal processing and method for making microsystem arrays |
KR100707215B1 (ko) * | 2006-04-25 | 2007-04-13 | 삼성전자주식회사 | 고배향성 실리콘 박막 형성 방법, 3d 반도체소자 제조방법 및 3d 반도체소자 |
JP2010187373A (ja) * | 2009-01-19 | 2010-08-26 | Ngk Insulators Ltd | 複合基板及びそれを用いた弾性波デバイス |
US8674790B2 (en) * | 2009-12-28 | 2014-03-18 | Seiko Epson Corporation | Surface acoustic wave device, oscillator, module apparatus |
US8624690B2 (en) * | 2009-12-28 | 2014-01-07 | Seiko Epson Corporation | Surface acoustic wave device, oscillator, module apparatus |
US8616056B2 (en) * | 2010-11-05 | 2013-12-31 | Analog Devices, Inc. | BAW gyroscope with bottom electrode |
US20130026480A1 (en) * | 2011-07-25 | 2013-01-31 | Bridgelux, Inc. | Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow |
DE102018105290B4 (de) * | 2018-03-07 | 2022-11-17 | RF360 Europe GmbH | Schichtsystem, Herstellungsverfahren und auf dem Schichtsystem ausgebildetet SAW-Bauelement |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1372235A (en) * | 1971-05-05 | 1974-10-30 | Secr Defence | Acoustic surface wave devices |
GB1363519A (en) * | 1972-08-17 | 1974-08-14 | Standard Telephones Cables Ltd | Acoustic surface wave device |
US3965444A (en) * | 1975-01-03 | 1976-06-22 | Raytheon Company | Temperature compensated surface acoustic wave devices |
DE2607837C2 (de) * | 1975-03-04 | 1984-09-13 | Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto | Mehrschichten-Interdigital-Wandler für akustische Oberflächenwellen |
US4037176A (en) | 1975-03-18 | 1977-07-19 | Matsushita Electric Industrial Co., Ltd. | Multi-layered substrate for a surface-acoustic-wave device |
US4006438A (en) | 1975-08-18 | 1977-02-01 | Amp Incorporated | Electro-acoustic surface-wave filter device |
GB2001106B (en) * | 1977-07-14 | 1982-07-07 | National Research Development Co | Epitaxial crystalline aluminium nitride |
US4194171A (en) | 1978-07-07 | 1980-03-18 | The United States Of America As Represented By The Secretary Of The Navy | Zinc oxide on silicon device for parallel in, serial out, discrete fourier transform |
JPS5687913A (en) * | 1979-12-19 | 1981-07-17 | Matsushita Electric Ind Co Ltd | Surface elastic wave element |
JPS5835404B2 (ja) * | 1979-12-27 | 1983-08-02 | クラリオン株式会社 | 弾性表面波パラメトリック装置 |
US4320365A (en) * | 1980-11-03 | 1982-03-16 | United Technologies Corporation | Fundamental, longitudinal, thickness mode bulk wave resonator |
-
1983
- 1983-03-09 DE DE3308365A patent/DE3308365A1/de active Granted
- 1983-03-09 GB GB08306526A patent/GB2120037B/en not_active Expired
- 1983-03-09 US US06/473,410 patent/US4511816A/en not_active Expired - Lifetime
- 1983-03-10 NL NL8300879A patent/NL8300879A/nl not_active Application Discontinuation
- 1983-03-10 FR FR8303952A patent/FR2523382B1/fr not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4417224A1 (de) * | 1993-05-18 | 1994-11-24 | Sanyo Electric Co | Akustische Oberflächenwellenvorrichtung und Verfahren zu ihrer Herstellung |
DE4417224B4 (de) * | 1993-05-18 | 2004-04-01 | Sanyo Electric Co., Ltd., Moriguchi | Akustische Oberflächenwellenvorrichtung und Verfahren zu ihrer Herstellung |
Also Published As
Publication number | Publication date |
---|---|
DE3308365A1 (de) | 1983-09-15 |
US4511816A (en) | 1985-04-16 |
GB2120037B (en) | 1987-11-18 |
FR2523382B1 (fr) | 1988-11-04 |
NL8300879A (nl) | 1983-10-03 |
GB8306526D0 (en) | 1983-04-13 |
FR2523382A1 (fr) | 1983-09-16 |
GB2120037A (en) | 1983-11-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3308365C2 (de) | ||
DE3336281C2 (de) | SAW-Oberflächenwellenbauelement | |
DE4400980C2 (de) | Oberflächenwellenbauelement | |
DE2746712C3 (de) | Piezoelektrischer Resonator | |
DE3208239C2 (de) | Oberflächenwellenbauelement | |
DE10325281B4 (de) | Elektroakustisches Bauelement und Verfahren zur Herstellung | |
US4243960A (en) | Method and materials for tuning the center frequency of narrow-band surface-acoustic-wave (SAW) devices by means of dielectric overlays | |
DE2802946C2 (de) | ||
DE2600138A1 (de) | Verzoegerungseinrichtung mit einem zur uebertragung akustischer oberflaechenwellen dienenden, piezoelektrischen traegerkoerper und verfahren zu ihrer herstellung | |
DE19854729C2 (de) | Verfahren zum Herstellen eines Oberflächenwellenbauelements und zum Einstellen von dessen Beriebsfrequenz | |
WO2004066493A1 (de) | Saw-bauelement mit verbessertem temperaturgang | |
DE102018105290B4 (de) | Schichtsystem, Herstellungsverfahren und auf dem Schichtsystem ausgebildetet SAW-Bauelement | |
DE102017111448A1 (de) | SAW-Vorrichtung mit unterdrückten Störmodensignalen | |
DE19803791A1 (de) | Akustisches Oberflächenwellenbauelement | |
DE4121550A1 (de) | Magnetoelastische wellenvorrichtung | |
DE2528046A1 (de) | Temperaturstabilisierung bei oberflaechenschallwellen-substraten | |
DE2644620A1 (de) | Temperaturstabilisierte akustische verzoegerungsleitung | |
DE2531151C3 (de) | Mit elastischen Oberflächenwellen arbeitende elektromechanische Einrichtung | |
DE10202856B4 (de) | Oberflächenakustikwellenvorrichtung | |
DE2820046C2 (de) | Akustisches Oberflächenwellen- Bauelement | |
DE3348366C2 (de) | Akustische Oberflächenwellen bildende Vorrichtung | |
DE4417224B4 (de) | Akustische Oberflächenwellenvorrichtung und Verfahren zu ihrer Herstellung | |
DE2461664C2 (de) | Vorrichtung auf der Basis der akustischen Oberflächenwellen | |
GB2025184A (en) | Surface acousticwave device comprising a piezoelectric subtrate having a zinc oxid layer on an alumina layer | |
DE3817728A1 (de) | Oberflaechenwellenbauelement |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
8172 | Supplementary division/partition in: |
Ref country code: DE Ref document number: 3348366 Format of ref document f/p: P Ref country code: DE Ref document number: 3348369 Format of ref document f/p: P |
|
Q171 | Divided out to: |
Ref country code: DE Ref document number: 3348369 Ref country code: DE Ref document number: 3348366 |
|
AH | Division in |
Ref country code: DE Ref document number: 3348366 Format of ref document f/p: P Ref country code: DE Ref document number: 3348369 Format of ref document f/p: P |
|
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
AH | Division in |
Ref country code: DE Ref document number: 3348369 Format of ref document f/p: P |
|
AH | Division in |
Ref country code: DE Ref document number: 3348366 Format of ref document f/p: P |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: CLARION CO., LTD., TOKIO/TOKYO, JP |
|
8339 | Ceased/non-payment of the annual fee |