DE3375739D1 - Feedback circuit for a semiconductor active element sensor - Google Patents

Feedback circuit for a semiconductor active element sensor

Info

Publication number
DE3375739D1
DE3375739D1 DE8383111718T DE3375739T DE3375739D1 DE 3375739 D1 DE3375739 D1 DE 3375739D1 DE 8383111718 T DE8383111718 T DE 8383111718T DE 3375739 T DE3375739 T DE 3375739T DE 3375739 D1 DE3375739 D1 DE 3375739D1
Authority
DE
Germany
Prior art keywords
feedback circuit
active element
semiconductor active
element sensor
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383111718T
Other languages
English (en)
Inventor
Masanori Tanabe
Kanji Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3375739D1 publication Critical patent/DE3375739D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/18—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying effective impedance of discharge tubes or semiconductor devices
    • G01D5/183—Sensing rotation or linear movement using strain, force or pressure sensors
    • G01D5/185—Sensing rotation or linear movement using strain, force or pressure sensors using piezoelectric sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0098—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
DE8383111718T 1982-11-24 1983-11-23 Feedback circuit for a semiconductor active element sensor Expired DE3375739D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57204668A JPS5995420A (ja) 1982-11-24 1982-11-24 Ｍｏｓ型センサ

Publications (1)

Publication Number Publication Date
DE3375739D1 true DE3375739D1 (en) 1988-03-31

Family

ID=16494305

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383111718T Expired DE3375739D1 (en) 1982-11-24 1983-11-23 Feedback circuit for a semiconductor active element sensor

Country Status (4)

Country Link
US (1) US4633099A (de)
EP (1) EP0118605B1 (de)
JP (1) JPS5995420A (de)
DE (1) DE3375739D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4818895A (en) * 1987-11-13 1989-04-04 Kaufman Lance R Direct current sense lead
EP0363005B1 (de) * 1988-09-02 1996-06-05 Honda Giken Kogyo Kabushiki Kaisha Halbleitermessaufnehmer
JP2532149B2 (ja) * 1990-02-06 1996-09-11 本田技研工業株式会社 半導体センサ
JPH03123439U (de) * 1990-03-23 1991-12-16
JPH04105369A (ja) * 1990-08-24 1992-04-07 Honda Motor Co Ltd 半導体センサ
JP3009239B2 (ja) * 1991-04-02 2000-02-14 本田技研工業株式会社 半導体センサ
US5397911A (en) * 1991-04-02 1995-03-14 Honda Giken Kogyo Kabushiki Kaisha Semiconductor sensor with plural gate electrodes
JP3281217B2 (ja) * 1995-05-23 2002-05-13 富士電機株式会社 半導体式加速度センサと該センサのセンサ素子の特性評価方法
JP2852886B2 (ja) * 1995-09-04 1999-02-03 本田技研工業株式会社 半導体応力センサ
US6621131B2 (en) 2001-11-01 2003-09-16 Intel Corporation Semiconductor transistor having a stressed channel
DE102004016155B3 (de) * 2004-04-01 2006-05-24 Infineon Technologies Ag Kraftsensor mit organischen Feldeffekttransistoren, darauf beruhender Drucksensor, Positionssensor und Fingerabdrucksensor
EP1805487A4 (de) * 2004-06-30 2013-07-31 Commercialisation Des Produits De La Rech Appliquee Socpra Sciences Et Genie S E C Soc D Sensorgruppen auf der basis elektronischer oszillatoren
US9399572B2 (en) 2011-01-28 2016-07-26 Elmos Semiconductor Ag Microelectromechanical component and method for testing a microelectromechanical component
JP2015075623A (ja) * 2013-10-09 2015-04-20 セイコーエプソン株式会社 発光装置、電子機器、及び発光装置の設計方法
JP6287025B2 (ja) * 2013-10-09 2018-03-07 セイコーエプソン株式会社 発光装置及び電子機器
CN105758898B (zh) * 2016-04-15 2019-02-26 中国科学院过程工程研究所 一种高灵敏自反馈型气敏传感器报警电路
EP3987264A1 (de) * 2019-06-24 2022-04-27 Albert-Ludwigs-Universität Freiburg Taktiler sensor und verfahren zum betrieb eines taktilen sensors

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609252A (en) * 1967-01-23 1971-09-28 Texas Instruments Inc Transducer apparatus and system utilizing insulated gate semiconductor field effect devices
US3749984A (en) * 1969-04-11 1973-07-31 Rca Corp Electroacoustic semiconductor device employing an igfet
US3582690A (en) * 1969-06-09 1971-06-01 Gen Electric Semiconductor strain sensor with controlled sensitivity
US3805096A (en) * 1973-01-22 1974-04-16 W Hamilton Coded touch multifunction touch control switch circuitry
GB1443174A (en) * 1973-04-06 1976-07-21 Alphameric Keyboards Ltd Keyboards for electronic circuits
US4081700A (en) * 1976-06-16 1978-03-28 Hamilton Ii William F Touch control switch circuit with compensation for power supply line fluctuations
US4173900A (en) * 1977-03-07 1979-11-13 Hitachi, Ltd. Semiconductor pressure transducer
JPS547699A (en) * 1977-06-20 1979-01-20 Hitachi Ltd Method of dressing wire-out electric-discharge processing electrodes
US4263659A (en) * 1978-03-27 1981-04-21 Canon Kabushiki Kaisha Electronic instrument with a flexible keyboard
CH623195B (fr) * 1978-04-11 1900-01-01 Ebauches Sa Montre electronique avec moyens de commande et de selection des fonctions.
US4176555A (en) * 1978-08-07 1979-12-04 Mechanical Technology Incorporated Signal amplifier system for controlled carrier signal measuring sensor/transducer of the variable impedance type
DE2841312C2 (de) * 1978-09-22 1985-06-05 Robert Bosch Gmbh, 7000 Stuttgart Monolithischer Halbleiter-Drucksensor und Verfahren zu dessen Herstellung
JPS55112864U (de) * 1979-02-02 1980-08-08
US4205556A (en) * 1979-02-12 1980-06-03 Rockwell International Corporation Circuitry for strain sensitive apparatus
US4378578A (en) * 1980-01-14 1983-03-29 Pioneer Ansafone Manufacturing Corporation Mode control device for tape recorders
JPS56114097A (en) * 1980-02-15 1981-09-08 Hokushin Electric Works Physical quantity converter
JPS5952727A (ja) * 1982-09-20 1984-03-27 Hitachi Ltd 半導体圧力センサ

Also Published As

Publication number Publication date
EP0118605A3 (en) 1985-05-29
JPH0159525B2 (de) 1989-12-18
EP0118605B1 (de) 1988-02-24
US4633099A (en) 1986-12-30
JPS5995420A (ja) 1984-06-01
EP0118605A2 (de) 1984-09-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee