DE3376166D1 - Process for manufacturing an electrical resistor having a polycrystalline semiconductor material, and integrated circuit device comprising this resistor - Google Patents
Process for manufacturing an electrical resistor having a polycrystalline semiconductor material, and integrated circuit device comprising this resistorInfo
- Publication number
- DE3376166D1 DE3376166D1 DE8383401950T DE3376166T DE3376166D1 DE 3376166 D1 DE3376166 D1 DE 3376166D1 DE 8383401950 T DE8383401950 T DE 8383401950T DE 3376166 T DE3376166 T DE 3376166T DE 3376166 D1 DE3376166 D1 DE 3376166D1
- Authority
- DE
- Germany
- Prior art keywords
- resistor
- manufacturing
- integrated circuit
- semiconductor material
- circuit device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/934—Sheet resistance, i.e. dopant parameters
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8216803A FR2534415A1 (fr) | 1982-10-07 | 1982-10-07 | Procede de fabrication de resistances electriques dans un materiau semi-conducteur polycristallin et dispositif a circuits integres resultant |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3376166D1 true DE3376166D1 (en) | 1988-05-05 |
Family
ID=9278052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8383401950T Expired DE3376166D1 (en) | 1982-10-07 | 1983-10-06 | Process for manufacturing an electrical resistor having a polycrystalline semiconductor material, and integrated circuit device comprising this resistor |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4916507A (de) |
| EP (1) | EP0107556B1 (de) |
| JP (1) | JPH0614532B2 (de) |
| DE (1) | DE3376166D1 (de) |
| FR (1) | FR2534415A1 (de) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59152657A (ja) * | 1983-02-18 | 1984-08-31 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 高シ−ト抵抗を有する多結晶シリコン層の形成方法 |
| GB2182488A (en) * | 1985-11-02 | 1987-05-13 | Stc Plc | Integrated circuit resistors |
| FR2602093B1 (fr) * | 1985-12-27 | 1988-10-14 | Bull Sa | Procede de fabrication d'une resistance electrique par dopage d'un materiau semiconducteur et circuit integre en resultant |
| KR900005038B1 (ko) * | 1987-07-31 | 1990-07-18 | 삼성전자 주식회사 | 고저항 다결정 실리콘의 제조방법 |
| US5037766A (en) * | 1988-12-06 | 1991-08-06 | Industrial Technology Research Institute | Method of fabricating a thin film polysilicon thin film transistor or resistor |
| JP3082923B2 (ja) * | 1989-12-26 | 2000-09-04 | ソニー株式会社 | 半導体装置の製法 |
| US5068201A (en) * | 1990-05-31 | 1991-11-26 | Sgs-Thomson Microelectronics, Inc. | Method for forming a high valued resistive load element and low resistance interconnect for integrated circuits |
| US5462894A (en) * | 1991-08-06 | 1995-10-31 | Sgs-Thomson Microelectronics, Inc. | Method for fabricating a polycrystalline silicon resistive load element in an integrated circuit |
| US5182627A (en) * | 1991-09-30 | 1993-01-26 | Sgs-Thomson Microelectronics, Inc. | Interconnect and resistor for integrated circuits |
| US5212108A (en) * | 1991-12-13 | 1993-05-18 | Honeywell Inc. | Fabrication of stabilized polysilicon resistors for SEU control |
| IT1256362B (it) * | 1992-08-19 | 1995-12-04 | St Microelectronics Srl | Processo di realizzazione su semiconduttori di regioni impiantate a basso rischio di channeling |
| US5318915A (en) * | 1993-01-25 | 1994-06-07 | North Carolina State University At Raleigh | Method for forming a p-n junction in silicon carbide |
| US5322802A (en) * | 1993-01-25 | 1994-06-21 | North Carolina State University At Raleigh | Method of fabricating silicon carbide field effect transistor |
| JP3180875B2 (ja) * | 1994-04-01 | 2001-06-25 | 富士電機株式会社 | 絶縁ゲート型サイリスタ |
| US5543350A (en) * | 1995-09-29 | 1996-08-06 | Chartered Semiconductor Manufacturing Pte Ltd | SRAM resistor tab doping by plug implant from buried contact |
| US6188136B1 (en) * | 1996-06-26 | 2001-02-13 | Kabushiki Kaisha Toshiba | Semiconductor device including a wiring layer having a non-doped or high resistivity polycrystal silicon portion |
| KR100232206B1 (ko) * | 1996-12-26 | 1999-12-01 | 김영환 | 반도체 소자의 제조방법 |
| US6069398A (en) * | 1997-08-01 | 2000-05-30 | Advanced Micro Devices, Inc. | Thin film resistor and fabrication method thereof |
| US5949092A (en) * | 1997-08-01 | 1999-09-07 | Advanced Micro Devices, Inc. | Ultra-high-density pass gate using dual stacked transistors having a gate structure with planarized upper surface in relation to interlayer insulator |
| US5888853A (en) * | 1997-08-01 | 1999-03-30 | Advanced Micro Devices, Inc. | Integrated circuit including a graded grain structure for enhanced transistor formation and fabrication method thereof |
| US7785979B2 (en) * | 2008-07-15 | 2010-08-31 | International Business Machines Corporation | Integrated circuits comprising resistors having different sheet resistances and methods of fabricating the same |
| JP2012182488A (ja) * | 2012-05-25 | 2012-09-20 | Renesas Electronics Corp | 半導体装置及び半導体装置の製造方法 |
| US11637173B2 (en) * | 2020-09-29 | 2023-04-25 | Globalfoundries U.S. Inc. | Structure including polycrystalline resistor with dopant-including polycrystalline region thereunder |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4416049A (en) * | 1970-05-30 | 1983-11-22 | Texas Instruments Incorporated | Semiconductor integrated circuit with vertical implanted polycrystalline silicon resistor |
| AU464038B2 (en) * | 1970-12-09 | 1975-08-14 | Philips Nv | Improvements in and relating to semiconductor devices |
| US3886587A (en) * | 1973-07-19 | 1975-05-27 | Harris Corp | Isolated photodiode array |
| JPS5213788A (en) * | 1975-07-23 | 1977-02-02 | Hitachi Ltd | Production method of semiconductor device |
| US4053925A (en) * | 1975-08-07 | 1977-10-11 | Ibm Corporation | Method and structure for controllng carrier lifetime in semiconductor devices |
| US4110776A (en) * | 1976-09-27 | 1978-08-29 | Texas Instruments Incorporated | Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer |
| JPS5552254A (en) * | 1978-10-11 | 1980-04-16 | Nec Corp | Semiconductor device |
| GB2075781A (en) * | 1979-09-27 | 1981-11-18 | American Micro Syst | Sample and hold circuit with offset cancellation |
| JPS5696850A (en) * | 1979-12-30 | 1981-08-05 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| US4367580A (en) * | 1980-03-21 | 1983-01-11 | Texas Instruments Incorporated | Process for making polysilicon resistors |
| US4432008A (en) * | 1980-07-21 | 1984-02-14 | The Board Of Trustees Of The Leland Stanford Junior University | Gold-doped IC resistor region |
-
1982
- 1982-10-07 FR FR8216803A patent/FR2534415A1/fr active Granted
-
1983
- 1983-10-06 DE DE8383401950T patent/DE3376166D1/de not_active Expired
- 1983-10-06 JP JP58188290A patent/JPH0614532B2/ja not_active Expired - Lifetime
- 1983-10-06 EP EP83401950A patent/EP0107556B1/de not_active Expired
- 1983-10-07 US US06/540,142 patent/US4916507A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US4916507A (en) | 1990-04-10 |
| JPS5989452A (ja) | 1984-05-23 |
| FR2534415B1 (de) | 1985-01-11 |
| FR2534415A1 (fr) | 1984-04-13 |
| EP0107556A1 (de) | 1984-05-02 |
| EP0107556B1 (de) | 1988-03-30 |
| JPH0614532B2 (ja) | 1994-02-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |