DE3377687D1 - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
DE3377687D1
DE3377687D1 DE8383102371T DE3377687T DE3377687D1 DE 3377687 D1 DE3377687 D1 DE 3377687D1 DE 8383102371 T DE8383102371 T DE 8383102371T DE 3377687 T DE3377687 T DE 3377687T DE 3377687 D1 DE3377687 D1 DE 3377687D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383102371T
Other languages
English (en)
Inventor
Hideo Sunami
Tokuo Kure
Yoshifumi Kawamoto
Masao Tamura
Masanobu Miyao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3377687D1 publication Critical patent/DE3377687D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
DE8383102371T 1982-03-10 1983-03-10 Semiconductor memory Expired DE3377687D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57036418A JPS58154256A (ja) 1982-03-10 1982-03-10 半導体装置

Publications (1)

Publication Number Publication Date
DE3377687D1 true DE3377687D1 (en) 1988-09-15

Family

ID=12469271

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383102371T Expired DE3377687D1 (en) 1982-03-10 1983-03-10 Semiconductor memory

Country Status (5)

Country Link
US (2) US4751557A (de)
EP (1) EP0088451B1 (de)
JP (1) JPS58154256A (de)
KR (1) KR900007606B1 (de)
DE (1) DE3377687D1 (de)

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5357131A (en) * 1982-03-10 1994-10-18 Hitachi, Ltd. Semiconductor memory with trench capacitor
US4473598A (en) * 1982-06-30 1984-09-25 International Business Machines Corporation Method of filling trenches with silicon and structures
JPH0640573B2 (ja) * 1983-12-26 1994-05-25 株式会社日立製作所 半導体集積回路装置
US5214496A (en) * 1982-11-04 1993-05-25 Hitachi, Ltd. Semiconductor memory
JPH0666436B2 (ja) * 1983-04-15 1994-08-24 株式会社日立製作所 半導体集積回路装置
KR920010461B1 (ko) * 1983-09-28 1992-11-28 가부시끼가이샤 히다찌세이사꾸쇼 반도체 메모리와 그 제조 방법
JPS6088468A (ja) * 1983-10-13 1985-05-18 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体集積装置の製造方法
JPS60128657A (ja) * 1983-12-15 1985-07-09 Toshiba Corp 半導体記憶装置
JPS60152058A (ja) * 1984-01-20 1985-08-10 Toshiba Corp 半導体記憶装置
JPS60189964A (ja) * 1984-03-12 1985-09-27 Hitachi Ltd 半導体メモリ
JPH073858B2 (ja) * 1984-04-11 1995-01-18 株式会社日立製作所 半導体装置の製造方法
JPH0616549B2 (ja) * 1984-04-17 1994-03-02 三菱電機株式会社 半導体集積回路装置
EP0164829B1 (de) * 1984-04-19 1988-09-28 Nippon Telegraph And Telephone Corporation Halbleiterspeicherbauelement und Verfahren zur Herstellung
ATE41267T1 (de) * 1984-04-25 1989-03-15 Siemens Ag Ein-transistor-speicherzelle fuer hochintegrierte dynamische halbleiterspeicher und verfahren zu ihrer herstellung.
JPS614271A (ja) * 1984-06-14 1986-01-10 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン メモリセル
USRE33261E (en) * 1984-07-03 1990-07-10 Texas Instruments, Incorporated Trench capacitor for high density dynamic RAM
JPS6118167A (ja) * 1984-07-04 1986-01-27 Hitachi Ltd 半導体装置
JPS6151869A (ja) * 1984-08-20 1986-03-14 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
JPS6151965A (ja) * 1984-08-22 1986-03-14 Nec Corp 半導体記憶装置
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US4890145A (en) * 1984-08-31 1989-12-26 Texas Instruments Incorporated dRAM cell and array
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
JPS61107762A (ja) * 1984-10-31 1986-05-26 Toshiba Corp 半導体記憶装置の製造方法
US4694561A (en) * 1984-11-30 1987-09-22 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making high-performance trench capacitors for DRAM cells
JPS61135151A (ja) * 1984-12-05 1986-06-23 Mitsubishi Electric Corp 半導体記憶装置
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US5164917A (en) * 1985-06-26 1992-11-17 Texas Instruments Incorporated Vertical one-transistor DRAM with enhanced capacitance and process for fabricating
US4704368A (en) * 1985-10-30 1987-11-03 International Business Machines Corporation Method of making trench-incorporated monolithic semiconductor capacitor and high density dynamic memory cells including the capacitor
US4820652A (en) * 1985-12-11 1989-04-11 Sony Corporation Manufacturing process and structure of semiconductor memory devices
JPS62160756A (ja) * 1986-01-10 1987-07-16 Sony Corp 半導体装置
JPS62181460A (ja) * 1986-02-06 1987-08-08 Sony Corp 半導体メモリ装置
JPH0685427B2 (ja) * 1986-03-13 1994-10-26 三菱電機株式会社 半導体記憶装置
JPS6360556A (ja) * 1986-08-29 1988-03-16 Nec Corp 半導体メモリセル
JPS6360557A (ja) * 1986-08-29 1988-03-16 Nec Corp 半導体メモリセル
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
JPS63239973A (ja) * 1986-10-08 1988-10-05 テキサス　インスツルメンツ　インコーポレイテツド 集積回路およびその製造方法
JPH0797625B2 (ja) * 1986-11-19 1995-10-18 三菱電機株式会社 半導体記憶装置
US5017504A (en) * 1986-12-01 1991-05-21 Mitsubishi Denki Kabushiki Kaisha Vertical type MOS transistor and method of formation thereof
JPS63198323A (ja) * 1987-02-13 1988-08-17 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR890003217B1 (ko) * 1987-02-24 1989-08-26 삼성전자 주식회사 디램 쎌의 제조방법
US5250458A (en) * 1987-02-25 1993-10-05 Mitsubishi Denki Kabushiki Kaisha Method for manufacturing semiconductor memory device having stacked memory capacitors
JPH0620108B2 (ja) * 1987-03-23 1994-03-16 三菱電機株式会社 半導体装置の製造方法
JPH0795568B2 (ja) * 1987-04-27 1995-10-11 日本電気株式会社 半導体記憶装置
JPH0815208B2 (ja) * 1987-07-01 1996-02-14 三菱電機株式会社 半導体記憶装置
DE3851102D1 (de) * 1987-07-10 1994-09-22 Siemens Ag Hochintegrierbare Speicherzelle und Verfahren zu ihrer Herstellung.
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US5183774A (en) * 1987-11-17 1993-02-02 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor memory device
US5066607A (en) * 1987-11-30 1991-11-19 Texas Instruments Incorporated Method of making a trench DRAM cell with dynamic gain
JPH01151268A (ja) * 1987-12-08 1989-06-14 Mitsubishi Electric Corp 半導体装置の製造方法
US4980734A (en) * 1988-05-31 1990-12-25 Texas Instruments Incorporated Dynamic memory cell using silicon-on-insulator transistor with trench capacitor
US5103276A (en) * 1988-06-01 1992-04-07 Texas Instruments Incorporated High performance composed pillar dram cell
US4896293A (en) * 1988-06-09 1990-01-23 Texas Instruments Incorporated Dynamic ram cell with isolated trench capacitors
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
US4958206A (en) * 1988-06-28 1990-09-18 Texas Instruments Incorporated Diffused bit line trench capacitor dram cell
US5346834A (en) * 1988-11-21 1994-09-13 Hitachi, Ltd. Method for manufacturing a semiconductor device and a semiconductor memory device
US5293563A (en) * 1988-12-29 1994-03-08 Sharp Kabushiki Kaisha Multi-level memory cell with increased read-out margin
US5219779A (en) * 1989-05-11 1993-06-15 Sharp Kabushiki Kaisha Memory cell for dynamic random access memory
US5057887A (en) * 1989-05-14 1991-10-15 Texas Instruments Incorporated High density dynamic ram cell
JPH02299263A (ja) * 1989-05-15 1990-12-11 Sanyo Electric Co Ltd 半導体記憶装置
US5017506A (en) * 1989-07-25 1991-05-21 Texas Instruments Incorporated Method for fabricating a trench DRAM
US4978634A (en) * 1989-07-25 1990-12-18 Texas Instruments, Incorporated Method of making trench DRAM cell with stacked capacitor and buried lateral contact
US5111259A (en) * 1989-07-25 1992-05-05 Texas Instruments Incorporated Trench capacitor memory cell with curved capacitors
JP2974252B2 (ja) * 1989-08-19 1999-11-10 富士通株式会社 半導体記憶装置
JPH04212450A (ja) * 1990-04-11 1992-08-04 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
US5064777A (en) * 1990-06-28 1991-11-12 International Business Machines Corporation Fabrication method for a double trench memory cell device
US5034787A (en) * 1990-06-28 1991-07-23 International Business Machines Corporation Structure and fabrication method for a double trench memory cell device
US4988637A (en) * 1990-06-29 1991-01-29 International Business Machines Corp. Method for fabricating a mesa transistor-trench capacitor memory cell structure
JP2672184B2 (ja) * 1990-08-27 1997-11-05 シャープ株式会社 半導体装置の製造方法
JPH0828476B2 (ja) * 1991-06-07 1996-03-21 富士通株式会社 半導体装置及びその製造方法
US5208172A (en) * 1992-03-02 1993-05-04 Motorola, Inc. Method for forming a raised vertical transistor
US5308997A (en) * 1992-06-22 1994-05-03 Motorola, Inc. Self-aligned thin film transistor
KR0135067B1 (ko) * 1993-03-22 1998-04-20 문정환 반도체 장치의 메모리셀 제조방법 및 구조
US5510287A (en) * 1994-11-01 1996-04-23 Taiwan Semiconductor Manuf. Company Method of making vertical channel mask ROM
US6242772B1 (en) * 1994-12-12 2001-06-05 Altera Corporation Multi-sided capacitor in an integrated circuit
US5721148A (en) * 1995-12-07 1998-02-24 Fuji Electric Co. Method for manufacturing MOS type semiconductor device
US5674769A (en) * 1996-06-14 1997-10-07 Siemens Aktiengesellschaft Process for forming deep trench DRAMs with sub-groundrule gates
US5770875A (en) * 1996-09-16 1998-06-23 International Business Machines Corporation Large value capacitor for SOI
TW402809B (en) * 1997-10-18 2000-08-21 United Microelectronics Corp The manufacture method of electrical charge storage structure
TW400644B (en) * 1998-10-26 2000-08-01 United Microelectronics Corp The structure of Dynamic Random Access Memory(DRAM) and the manufacture method thereof
US6544837B1 (en) * 2000-03-17 2003-04-08 International Business Machines Corporation SOI stacked DRAM logic
DE102004031385B4 (de) * 2004-06-29 2010-12-09 Qimonda Ag Verfahren zur Herstellung von Stegfeldeffekttransistoren in einer DRAM-Speicherzellenanordnung, Feldeffekttransistoren mit gekrümmtem Kanal und DRAM-Speicherzellenanordnung
KR20230026602A (ko) * 2021-08-17 2023-02-27 삼성전자주식회사 반도체 메모리 장치

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3962713A (en) * 1972-06-02 1976-06-08 Texas Instruments Incorporated Large value capacitor
NL7310279A (de) * 1972-07-31 1974-02-04
US4017885A (en) * 1973-10-25 1977-04-12 Texas Instruments Incorporated Large value capacitor
JPS5812739B2 (ja) * 1975-05-07 1983-03-10 株式会社日立製作所 半導体記憶装置
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element
US4151610A (en) * 1976-03-16 1979-04-24 Tokyo Shibaura Electric Co., Ltd. High density semiconductor memory device formed in a well and having more than one capacitor
US4467450A (en) * 1976-09-13 1984-08-21 Texas Instruments Incorporated Random access MOS memory cell using double level polysilicon
JPS5376686A (en) * 1976-12-17 1978-07-07 Nec Corp Semiconductor device
DE2807181C2 (de) * 1977-02-21 1985-11-28 Zaidan Hojin Handotai Kenkyu Shinkokai, Sendai, Miyagi Halbleiterspeichervorrichtung
US4140558A (en) * 1978-03-02 1979-02-20 Bell Telephone Laboratories, Incorporated Isolation of integrated circuits utilizing selective etching and diffusion
JPS54121080A (en) * 1978-03-13 1979-09-19 Nec Corp Semiconductor device
JPS5511365A (en) * 1978-07-11 1980-01-26 Pioneer Electronic Corp Semiconductor memory
JPS5524207A (en) * 1978-08-04 1980-02-21 Kokka Kogyo Kk Magnetic spring
CA1144646A (en) * 1978-09-20 1983-04-12 Junji Sakurai Dynamic ram having buried capacitor and planar gate
JPS5555557A (en) * 1978-10-20 1980-04-23 Hitachi Ltd Dynamic memory cell
JPS59135B2 (ja) * 1978-10-31 1984-01-05 富士通株式会社 半導体記憶装置
JPS5565458A (en) * 1978-11-10 1980-05-16 Nec Corp Memory cell
US4225879A (en) * 1979-01-26 1980-09-30 Burroughs Corporation V-MOS Field effect transistor for a dynamic memory cell having improved capacitance
US4462040A (en) * 1979-05-07 1984-07-24 International Business Machines Corporation Single electrode U-MOSFET random access memory
JPS5630763A (en) * 1979-08-23 1981-03-27 Toshiba Corp Semiconductor device
JPS5636164U (de) * 1979-08-27 1981-04-07
US4470062A (en) * 1979-08-31 1984-09-04 Hitachi, Ltd. Semiconductor device having isolation regions
US4262298A (en) * 1979-09-04 1981-04-14 Burroughs Corporation Ram having a stabilized substrate bias and low-threshold narrow-width transfer gates
JPS5643171U (de) * 1979-09-10 1981-04-20
US4271418A (en) * 1979-10-29 1981-06-02 American Microsystems, Inc. VMOS Memory cell and method for making same
JPS5666065A (en) * 1979-11-01 1981-06-04 Mitsubishi Electric Corp Semiconductor memory unit
JPS5681968A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of semiconductor device
JPS5681974A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of mos type semiconductor device
US4353086A (en) * 1980-05-07 1982-10-05 Bell Telephone Laboratories, Incorporated Silicon integrated circuits
JPS5710973A (en) * 1980-06-24 1982-01-20 Agency Of Ind Science & Technol Semiconductor device
US4397075A (en) * 1980-07-03 1983-08-09 International Business Machines Corporation FET Memory cell structure and process
US4409608A (en) * 1981-04-28 1983-10-11 The United States Of America As Represented By The Secretary Of The Navy Recessed interdigitated integrated capacitor
US4511911A (en) * 1981-07-22 1985-04-16 International Business Machines Corporation Dense dynamic memory cell structure and process
JPS58137245A (ja) * 1982-02-10 1983-08-15 Hitachi Ltd 大規模半導体メモリ
US4505026A (en) * 1983-07-14 1985-03-19 Intel Corporation CMOS Process for fabricating integrated circuits, particularly dynamic memory cells

Also Published As

Publication number Publication date
US4984030A (en) 1991-01-08
KR840003923A (ko) 1984-10-04
US4751557A (en) 1988-06-14
EP0088451B1 (de) 1988-08-10
EP0088451A1 (de) 1983-09-14
JPH0376584B2 (de) 1991-12-05
JPS58154256A (ja) 1983-09-13
KR900007606B1 (ko) 1990-10-17

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Legal Events

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8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT. GROENING, H., DIPL.-ING., PAT.-ANWAELTE, 8000 MUENCHEN

8339 Ceased/non-payment of the annual fee