DE3378944D1 - Transistor and circuit including a transistor - Google Patents

Transistor and circuit including a transistor

Info

Publication number
DE3378944D1
DE3378944D1 DE8383100929T DE3378944T DE3378944D1 DE 3378944 D1 DE3378944 D1 DE 3378944D1 DE 8383100929 T DE8383100929 T DE 8383100929T DE 3378944 T DE3378944 T DE 3378944T DE 3378944 D1 DE3378944 D1 DE 3378944D1
Authority
DE
Germany
Prior art keywords
transistor
circuit including
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383100929T
Other languages
English (en)
Inventor
Paul Michael Solomon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3378944D1 publication Critical patent/DE3378944D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
DE8383100929T 1982-04-26 1983-02-01 Transistor and circuit including a transistor Expired DE3378944D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/371,849 US4910562A (en) 1982-04-26 1982-04-26 Field induced base transistor

Publications (1)

Publication Number Publication Date
DE3378944D1 true DE3378944D1 (en) 1989-02-16

Family

ID=23465650

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383100929T Expired DE3378944D1 (en) 1982-04-26 1983-02-01 Transistor and circuit including a transistor

Country Status (4)

Country Link
US (1) US4910562A (de)
EP (1) EP0092645B1 (de)
JP (1) JPS58192383A (de)
DE (1) DE3378944D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0197052B1 (de) * 1984-09-21 1989-08-30 AT&T Corp. Eine neue halbleiteranordnung
US4691215A (en) * 1985-01-09 1987-09-01 American Telephone And Telegraph Company Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter
JPH088350B2 (ja) * 1985-04-08 1996-01-29 日本電気株式会社 半導体装置
JPS61248561A (ja) * 1985-04-25 1986-11-05 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション 半導体構造体
FI81682C (fi) * 1986-12-29 1990-11-12 Elecid Ab Oy Kabelbrottdetektor.
JPH02327A (ja) * 1987-10-09 1990-01-05 Fujitsu Ltd 半導体装置
US4839702A (en) * 1987-11-20 1989-06-13 Bell Communications Research, Inc. Semiconductor device based on charge emission from a quantum well

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3234057A (en) * 1961-06-23 1966-02-08 Ibm Semiconductor heterojunction device
BE634299A (de) * 1962-06-29 1900-01-01
US3445734A (en) * 1965-12-22 1969-05-20 Ibm Single diffused surface transistor and method of making same
GB1502165A (en) * 1974-04-10 1978-02-22 Sony Corp Semiconductor devices
US4075651A (en) * 1976-03-29 1978-02-21 Varian Associates, Inc. High speed fet employing ternary and quarternary iii-v active layers
CA1145482A (en) * 1979-12-28 1983-04-26 Takashi Mimura High electron mobility single heterojunction semiconductor device
JPS5946103B2 (ja) * 1980-03-10 1984-11-10 日本電信電話株式会社 トランジスタ
US4326208A (en) * 1980-03-26 1982-04-20 International Business Machines Corporation Semiconductor inversion layer transistor
US4366493A (en) * 1980-06-20 1982-12-28 International Business Machines Corporation Semiconductor ballistic transport device
US4410903A (en) * 1981-02-02 1983-10-18 The United States Of America As Represented By The Secretary Of The Navy Heterojunction-diode transistor EBS amplifier
FR2520157B1 (fr) * 1982-01-18 1985-09-13 Labo Electronique Physique Dispositif semi-conducteur du genre transistor a heterojonction(s)
GB2128026B (en) * 1982-10-01 1986-03-26 Gen Electric Co Plc Transistors

Also Published As

Publication number Publication date
EP0092645B1 (de) 1989-01-11
EP0092645A3 (en) 1986-10-01
JPH0465532B2 (de) 1992-10-20
JPS58192383A (ja) 1983-11-09
EP0092645A2 (de) 1983-11-02
US4910562A (en) 1990-03-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee