DE3379299D1 - Semiconductor device with field plate - Google Patents

Semiconductor device with field plate

Info

Publication number
DE3379299D1
DE3379299D1 DE8383108420T DE3379299T DE3379299D1 DE 3379299 D1 DE3379299 D1 DE 3379299D1 DE 8383108420 T DE8383108420 T DE 8383108420T DE 3379299 T DE3379299 T DE 3379299T DE 3379299 D1 DE3379299 D1 DE 3379299D1
Authority
DE
Germany
Prior art keywords
semiconductor device
field plate
plate
field
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383108420T
Other languages
English (en)
Inventor
Toshikatsu Shirasawa
Yoshikazu Hosokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3379299D1 publication Critical patent/DE3379299D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors
DE8383108420T 1982-08-27 1983-08-26 Semiconductor device with field plate Expired DE3379299D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57147779A JPS5939066A (ja) 1982-08-27 1982-08-27 半導体集積回路

Publications (1)

Publication Number Publication Date
DE3379299D1 true DE3379299D1 (en) 1989-04-06

Family

ID=15437992

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383108420T Expired DE3379299D1 (en) 1982-08-27 1983-08-26 Semiconductor device with field plate

Country Status (5)

Country Link
US (1) US4654691A (de)
EP (1) EP0104454B1 (de)
JP (1) JPS5939066A (de)
CA (1) CA1190663A (de)
DE (1) DE3379299D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61114574A (ja) * 1984-11-09 1986-06-02 Hitachi Ltd 半導体装置
JP2513617B2 (ja) * 1986-01-24 1996-07-03 株式会社東芝 正規化回路
FR2594596B1 (fr) * 1986-02-18 1988-08-26 Thomson Csf Structure semiconductrice associant un ou plusieurs transistors de puissance et leur logique de commande et de protection
US4786958A (en) * 1986-11-17 1988-11-22 General Motors Corporation Lateral dual gate thyristor and method of fabricating same
JP2896141B2 (ja) * 1987-02-26 1999-05-31 株式会社東芝 高耐圧半導体素子
US5241210A (en) * 1987-02-26 1993-08-31 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
US4861731A (en) * 1988-02-02 1989-08-29 General Motors Corporation Method of fabricating a lateral dual gate thyristor
JP2507557B2 (ja) * 1988-09-29 1996-06-12 三菱電機株式会社 半導体装置の製造方法
US5107312A (en) * 1989-09-11 1992-04-21 Harris Corporation Method of isolating a top gate of a MESFET and the resulting device
JP2903749B2 (ja) * 1991-03-29 1999-06-14 富士電機株式会社 伝導度変調型ｍｉｓｆｅｔを備えた半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1140822A (en) * 1967-01-26 1969-01-22 Westinghouse Brake & Signal Semi-conductor elements
JPS54122983A (en) * 1978-03-17 1979-09-22 Hitachi Ltd Semiconductor integrated circuit
JPS584829B2 (ja) * 1978-03-31 1983-01-27 日本電信電話株式会社 半導体集積回路
JPS55133553A (en) * 1979-04-03 1980-10-17 Hitachi Ltd Semiconductor integrated device
JPS5753944A (en) * 1980-09-17 1982-03-31 Hitachi Ltd Semiconductor integrated circuit
US4412242A (en) * 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
JPH108771A (ja) * 1996-06-21 1998-01-13 Mitsubishi Steel Mfg Co Ltd 建造物用制振装置

Also Published As

Publication number Publication date
JPH0139661B2 (de) 1989-08-22
CA1190663A (en) 1985-07-16
JPS5939066A (ja) 1984-03-03
EP0104454A3 (en) 1985-09-25
US4654691A (en) 1987-03-31
EP0104454A2 (de) 1984-04-04
EP0104454B1 (de) 1989-03-01

Similar Documents

Publication Publication Date Title
GB8302769D0 (en) Semiconductor device
GB2131603B (en) Semiconductor devices
GB8300539D0 (en) Semiconductor device
GB8324448D0 (en) Semiconductor device
GB8332597D0 (en) Semiconductor device
GB8311430D0 (en) Semiconductor device manufacture
DE3163340D1 (en) Semiconductor device
GB8326578D0 (en) Semiconductor device
DE3379136D1 (en) Semiconductor device having a planar structure
GB8333893D0 (en) Semiconductor device
DE3376926D1 (en) Semiconductor device with an improved bonding section
GB8325513D0 (en) Semiconductor device
GB8330763D0 (en) Semiconductor device
DE3379883D1 (en) Semiconductor device
DE3161615D1 (en) Semiconductor device
DE3376169D1 (en) Semiconductor device with power lines
DE3277891D1 (en) Planar semiconductor device
DE3380194D1 (en) Semiconductor device
DE3166929D1 (en) Semiconductor device
DE3379299D1 (en) Semiconductor device with field plate
DE3275044D1 (en) Planar semiconductor device
GB8300945D0 (en) Semiconductor device
DE3162083D1 (en) Semiconductor device
PT76800A (en) Burstingdisc orientation device
IE831555L (en) Semiconductor device

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee