DE3382717D1 - Torschaltung mit Feldeffekt- und Bipolartransistoren. - Google Patents
Torschaltung mit Feldeffekt- und Bipolartransistoren.Info
- Publication number
- DE3382717D1 DE3382717D1 DE87118836T DE3382717T DE3382717D1 DE 3382717 D1 DE3382717 D1 DE 3382717D1 DE 87118836 T DE87118836 T DE 87118836T DE 3382717 T DE3382717 T DE 3382717T DE 3382717 D1 DE3382717 D1 DE 3382717D1
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- gate circuit
- bipolar transistors
- bipolar
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
- H03K19/01721—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by means of a pull-up or down element
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57119815A JPH0783252B2 (ja) | 1982-07-12 | 1982-07-12 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3382717D1 true DE3382717D1 (de) | 1993-11-11 |
| DE3382717T2 DE3382717T2 (de) | 1994-05-05 |
Family
ID=14770918
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE87118836T Expired - Fee Related DE3382717T2 (de) | 1982-07-12 | 1983-07-11 | Torschaltung mit Feldeffekt- und Bipolartransistoren. |
| DE8383106796T Expired DE3378291D1 (en) | 1982-07-12 | 1983-07-11 | Gate circuit of combined field-effect and bipolar transistors |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8383106796T Expired DE3378291D1 (en) | 1982-07-12 | 1983-07-11 | Gate circuit of combined field-effect and bipolar transistors |
Country Status (5)
| Country | Link |
|---|---|
| US (4) | US4719373A (de) |
| EP (3) | EP0099100B1 (de) |
| JP (1) | JPH0783252B2 (de) |
| KR (1) | KR920004919B1 (de) |
| DE (2) | DE3382717T2 (de) |
Families Citing this family (95)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0783252B2 (ja) * | 1982-07-12 | 1995-09-06 | 株式会社日立製作所 | 半導体集積回路装置 |
| US5239212A (en) * | 1982-07-12 | 1993-08-24 | Hitachi, Ltd. | Gate circuit of combined field-effect and bipolar transistors with an improved discharge arrangement |
| JPS5994861A (ja) * | 1982-11-24 | 1984-05-31 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
| KR910008521B1 (ko) * | 1983-01-31 | 1991-10-18 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체집적회로 |
| JPH0669142B2 (ja) * | 1983-04-15 | 1994-08-31 | 株式会社日立製作所 | 半導体集積回路装置 |
| KR890004212B1 (en) * | 1983-07-08 | 1989-10-27 | Fujitsu Ltd | Complementary logic circuit |
| JPH0693626B2 (ja) * | 1983-07-25 | 1994-11-16 | 株式会社日立製作所 | 半導体集積回路装置 |
| JPS60125015A (ja) * | 1983-12-12 | 1985-07-04 | Hitachi Ltd | インバ−タ回路 |
| JPH0795395B2 (ja) * | 1984-02-13 | 1995-10-11 | 株式会社日立製作所 | 半導体集積回路 |
| EP0152939B1 (de) * | 1984-02-20 | 1993-07-28 | Hitachi, Ltd. | Arithmetische Operationseinheit und arithmetische Operationsschaltung |
| JPS60177723A (ja) * | 1984-02-24 | 1985-09-11 | Hitachi Ltd | 出力回路 |
| JPS60194615A (ja) * | 1984-03-16 | 1985-10-03 | Hitachi Ltd | 複合出力回路 |
| JPH07107973B2 (ja) * | 1984-03-26 | 1995-11-15 | 株式会社日立製作所 | スイツチング回路 |
| JPS613390A (ja) * | 1984-06-15 | 1986-01-09 | Hitachi Ltd | 記憶装置 |
| US4616146A (en) * | 1984-09-04 | 1986-10-07 | Motorola, Inc. | BI-CMOS driver circuit |
| JP2552107B2 (ja) * | 1985-01-14 | 1996-11-06 | 日本電信電話株式会社 | 同期式複合型集積回路装置 |
| EP0192093B1 (de) * | 1985-01-30 | 1990-06-13 | Kabushiki Kaisha Toshiba | Halbleitervorrichtung und Methode zu deren Herstellung |
| JPS61218143A (ja) * | 1985-03-25 | 1986-09-27 | Hitachi Ltd | 半導体集積回路装置 |
| JPH06103837B2 (ja) * | 1985-03-29 | 1994-12-14 | 株式会社東芝 | トライステ−ト形出力回路 |
| JPS61245625A (ja) * | 1985-04-24 | 1986-10-31 | Hitachi Ltd | 半導体集積回路装置 |
| US4647794A (en) * | 1985-05-22 | 1987-03-03 | Teledyne Industries, Inc. | Solid state relay having non overlapping switch closures |
| JPS625722A (ja) * | 1985-07-01 | 1987-01-12 | Toshiba Corp | インバ−タ回路 |
| JPS6242614A (ja) * | 1985-08-20 | 1987-02-24 | Fujitsu Ltd | 複合トランジスタ形インバ−タ |
| US4612458A (en) * | 1985-08-28 | 1986-09-16 | Advanced Micro Devices, Inc. | Merged PMOS/bipolar logic circuits |
| JPS62114326A (ja) * | 1985-11-13 | 1987-05-26 | Nec Corp | 論理回路 |
| US4678940A (en) * | 1986-01-08 | 1987-07-07 | Advanced Micro Devices, Inc. | TTL compatible merged bipolar/CMOS output buffer circuits |
| US4649294A (en) * | 1986-01-13 | 1987-03-10 | Motorola, Inc. | BIMOS logic gate |
| JPS62221219A (ja) * | 1986-03-22 | 1987-09-29 | Toshiba Corp | 論理回路 |
| US4701642A (en) * | 1986-04-28 | 1987-10-20 | International Business Machines Corporation | BICMOS binary logic circuits |
| US4682054A (en) * | 1986-06-27 | 1987-07-21 | Motorola, Inc. | BICMOS driver with output voltage swing enhancement |
| JPS6342216A (ja) * | 1986-08-08 | 1988-02-23 | Hitachi Ltd | バイポ−ラトランジスタと電界効果トランジスタとを含む複合回路 |
| JPS6382122A (ja) * | 1986-09-26 | 1988-04-12 | Toshiba Corp | 論理回路 |
| JPS63164612A (ja) * | 1986-12-26 | 1988-07-08 | Hitachi Ltd | 演算回路 |
| JPS63209220A (ja) * | 1987-02-26 | 1988-08-30 | Toshiba Corp | インバ−タ回路 |
| US4746817A (en) * | 1987-03-16 | 1988-05-24 | International Business Machines Corporation | BIFET logic circuit |
| JPH0611111B2 (ja) * | 1987-03-27 | 1994-02-09 | 株式会社東芝 | ＢｉＭＯＳ論理回路 |
| JPS6468021A (en) * | 1987-09-08 | 1989-03-14 | Mitsubishi Electric Corp | Logic circuit |
| KR900001062B1 (ko) * | 1987-09-15 | 1990-02-26 | 강진구 | 반도체 바이 씨 모오스 장치의 제조방법 |
| JPH0611112B2 (ja) * | 1987-11-28 | 1994-02-09 | 株式会社東芝 | 出力回路 |
| JP2550138B2 (ja) * | 1988-03-18 | 1996-11-06 | 株式会社日立製作所 | バイポーラトランジスタと電界効果トランジスタとを有する半導体集積回路装置 |
| US5187615A (en) * | 1988-03-30 | 1993-02-16 | Hitachi, Ltd. | Data separator and signal processing circuit |
| KR920009870B1 (ko) * | 1988-04-21 | 1992-11-02 | 삼성반도체통신 주식회사 | Bi-CMOS 인버터 회로 |
| JPH0239719A (ja) * | 1988-07-29 | 1990-02-08 | Fujitsu Ltd | 半導体回路 |
| US5068553A (en) * | 1988-10-31 | 1991-11-26 | Texas Instruments Incorporated | Delay stage with reduced Vdd dependence |
| JPH02143711A (ja) * | 1988-11-25 | 1990-06-01 | Nec Corp | トランジスタ回路 |
| US4980578A (en) * | 1988-12-20 | 1990-12-25 | Texas Instruments Incorporated | Fast sense amplifier |
| US4897564A (en) * | 1988-12-27 | 1990-01-30 | International Business Machines Corp. | BICMOS driver circuit for high density CMOS logic circuits |
| US4965470A (en) * | 1989-01-30 | 1990-10-23 | Samsung Electronics Co., Ltd. | High integrated Bi-CMOS logic circuit |
| JPH0736507B2 (ja) * | 1989-02-02 | 1995-04-19 | 株式会社東芝 | 半導体論理回路 |
| US5138195A (en) * | 1989-05-19 | 1992-08-11 | Fujitsu Limited | Bi-CMOS logic circuit having full voltage swing and rapid turn-off |
| JPH02305220A (ja) * | 1989-05-19 | 1990-12-18 | Fujitsu Ltd | Ｂｉ―ｃｍｏｓ回路 |
| DE59008826D1 (de) * | 1989-06-19 | 1995-05-11 | Heimann Optoelectronics Gmbh | Schaltungsanordnung zur Ansteuerung von Schaltelementen, die insbesondere geeignet ist für Flüssigkristallbildschirme. |
| US5107141A (en) * | 1989-11-01 | 1992-04-21 | Hitachi, Ltd. | BiCMOS logic circuit using 0.5 micron technology and having an operating potential difference of less than 4 volts |
| JP2820980B2 (ja) * | 1989-11-02 | 1998-11-05 | 富士通株式会社 | 論理回路 |
| US4999523A (en) * | 1989-12-05 | 1991-03-12 | Hewlett-Packard Company | BICMOS logic gate with higher pull-up voltage |
| KR920010212B1 (ko) * | 1989-12-29 | 1992-11-21 | 삼성전자 주식회사 | 바이씨모스 ttl레벨 출력구동회로 |
| JP2546904B2 (ja) * | 1990-01-31 | 1996-10-23 | 三菱電機株式会社 | 半導体論理回路 |
| JPH03231455A (ja) * | 1990-02-07 | 1991-10-15 | Toshiba Corp | 半導体集積回路 |
| US5182472A (en) * | 1990-02-08 | 1993-01-26 | Nec Corporation | Logic circuit with bipolar CMOS configuration |
| US5121013A (en) * | 1990-02-12 | 1992-06-09 | Advanced Micro Devices, Inc. | Noise reducing output buffer circuit with feedback path |
| JP2661318B2 (ja) * | 1990-03-27 | 1997-10-08 | 日本電気株式会社 | 半導体装置 |
| JPH043619A (ja) * | 1990-04-20 | 1992-01-08 | Toshiba Corp | 半導体集積回路 |
| JP2623918B2 (ja) * | 1990-06-04 | 1997-06-25 | 日本電気株式会社 | 出力バッファ回路 |
| JPH0440014A (ja) * | 1990-06-05 | 1992-02-10 | Mitsubishi Electric Corp | 論理回路装置 |
| US5241221A (en) * | 1990-07-06 | 1993-08-31 | North American Philips Corp., Signetics Div. | CMOS driver circuit having reduced switching noise |
| US5111076A (en) * | 1990-09-05 | 1992-05-05 | Min Ming Tarng | Digital superbuffer |
| JP3028840B2 (ja) * | 1990-09-19 | 2000-04-04 | 株式会社日立製作所 | バイポーラトランジスタとｍｏｓトランジスタの複合回路、及びそれを用いた半導体集積回路装置 |
| JP2607394B2 (ja) * | 1990-11-01 | 1997-05-07 | 株式会社日立製作所 | 非反転バッファ装置および半導体記憶装置 |
| DE69122050T2 (de) * | 1990-11-30 | 1997-02-20 | Canon Kk | Tintenstrahldruckkopf mit Steuerschaltung dafür |
| US5153464A (en) * | 1990-12-14 | 1992-10-06 | Hewlett-Packard Company | Bicmos tri-state output buffer |
| US5128562A (en) * | 1990-12-19 | 1992-07-07 | North American Philips Corporation, Signetics Division | Memory element with high metastability-immunity |
| JPH0697804A (ja) * | 1991-01-08 | 1994-04-08 | Nec Corp | 論理回路 |
| JP3079515B2 (ja) * | 1991-01-29 | 2000-08-21 | 株式会社東芝 | ゲ−トアレイ装置及び入力回路及び出力回路及び降圧回路 |
| US5132567A (en) * | 1991-04-18 | 1992-07-21 | International Business Machines Corporation | Low threshold BiCMOS circuit |
| US5191240A (en) * | 1991-06-05 | 1993-03-02 | International Business Machines Corporation | Bicmos driver circuits with improved low output level |
| US5118972A (en) * | 1991-06-13 | 1992-06-02 | International Business Machines Corporation | BiCMOS gate pull-down circuit |
| US5166544A (en) * | 1991-09-18 | 1992-11-24 | Sgs-Thomson Microelectronics, Inc. | Pseudo Darlington driver acts as Darlington during output slew, but has only 1 VBE drop when fully turned on |
| US5994755A (en) * | 1991-10-30 | 1999-11-30 | Intersil Corporation | Analog-to-digital converter and method of fabrication |
| US5369309A (en) * | 1991-10-30 | 1994-11-29 | Harris Corporation | Analog-to-digital converter and method of fabrication |
| US5243237A (en) * | 1992-01-22 | 1993-09-07 | Samsung Semiconductor, Inc. | Noninverting bi-cmos gates with propagation delays of a single bi-cmos inverter |
| EP0565807A1 (de) * | 1992-04-17 | 1993-10-20 | STMicroelectronics S.r.l. | MOS-Leistungstransistorbauelement |
| US5376816A (en) * | 1992-06-24 | 1994-12-27 | Nec Corporation | Bi-cmos integrated circuit device having buried region use in common for bipolar and mos transistors |
| AT404078B (de) * | 1992-09-17 | 1998-08-25 | Austria Mikrosysteme Int | Integrierte bicmos-schaltungsanordnung |
| JP2937652B2 (ja) * | 1992-10-01 | 1999-08-23 | 日本電気株式会社 | ＢｉＭＩＳ論理回路 |
| US5355030A (en) * | 1992-12-04 | 1994-10-11 | International Business Machines Corporation | Low voltage BICMOS logic switching circuit |
| US5430408A (en) * | 1993-03-08 | 1995-07-04 | Texas Instruments Incorporated | Transmission gate circuit |
| US5886542A (en) * | 1993-08-18 | 1999-03-23 | Texas Instruments Incorporated | Quasi-complementary BiCMOS circuit with enhanced pull down transistor clamp |
| JP2699823B2 (ja) * | 1993-09-24 | 1998-01-19 | 日本電気株式会社 | 半導体集積回路 |
| JP2727952B2 (ja) * | 1994-02-14 | 1998-03-18 | 株式会社日立製作所 | 半導体集積回路装置 |
| US5576654A (en) * | 1995-05-16 | 1996-11-19 | Harris Corporation | BIMOS driver circuit and method |
| JP2600635B2 (ja) * | 1995-07-10 | 1997-04-16 | 株式会社日立製作所 | ３ステート回路 |
| JP2800734B2 (ja) * | 1995-09-06 | 1998-09-21 | 日本電気株式会社 | 半導体集積回路 |
| US20040003828A1 (en) * | 2002-03-21 | 2004-01-08 | Jackson David P. | Precision surface treatments using dense fluids and a plasma |
| CN100442516C (zh) | 2002-11-29 | 2008-12-10 | 株式会社东芝 | 半导体集成电路装置及使用它的电子卡 |
| US7656224B2 (en) * | 2005-03-16 | 2010-02-02 | Texas Instruments Incorporated | Power efficient dynamically biased buffer for low drop out regulators |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US425877A (en) * | 1890-04-15 | Process of carbureting air or gas | ||
| US3370995A (en) * | 1965-08-02 | 1968-02-27 | Texas Instruments Inc | Method for fabricating electrically isolated semiconductor devices in integrated circuits |
| USRE27804E (en) * | 1967-02-28 | 1973-10-30 | Transistor-transistor logic circuits having improved voltage transfer characteristics | |
| US3541353A (en) * | 1967-09-13 | 1970-11-17 | Motorola Inc | Mosfet digital gate |
| DE2148891A1 (de) * | 1971-09-30 | 1973-04-05 | Siemens Ag | Schaltungsanordnung zum umschalten der stromrichtung in einem verbraucher |
| BE793033A (fr) * | 1971-12-22 | 1973-04-16 | Owens Illinois Inc | Generateur de tension d'entretien a verrouillage de baker pour panneauxd'indication a decharges pulsees |
| US3831102A (en) * | 1973-03-09 | 1974-08-20 | Rauland Corp | Push-pull audio amplifier |
| US3930169A (en) * | 1973-09-27 | 1975-12-30 | Motorola Inc | Cmos odd multiple repetition rate divider circuit |
| US3867644A (en) * | 1974-01-07 | 1975-02-18 | Signetics Corp | High speed low power schottky integrated logic gate circuit with current boost |
| DE2461935A1 (de) * | 1974-01-10 | 1975-07-17 | Hughes Aircraft Co | Flipflop |
| JPS5318377A (en) * | 1976-08-03 | 1978-02-20 | Toshiba Corp | Logical operation circuit |
| US4132906A (en) * | 1977-02-28 | 1979-01-02 | Motorola, Inc. | Circuit to improve rise time and/or reduce parasitic power supply spike current in bipolar transistor logic circuits |
| US4103188A (en) * | 1977-08-22 | 1978-07-25 | Rca Corporation | Complementary-symmetry amplifier |
| JPS5846863B2 (ja) * | 1977-08-25 | 1983-10-19 | 松下電器産業株式会社 | 半導体集積回路装置 |
| JPS5545207A (en) * | 1978-09-26 | 1980-03-29 | Oki Electric Ind Co Ltd | Complementary mos inverter circuit unit and its production |
| JPS5553910A (en) * | 1978-10-16 | 1980-04-19 | Nec Corp | Power amplifier |
| US4325180A (en) * | 1979-02-15 | 1982-04-20 | Texas Instruments Incorporated | Process for monolithic integration of logic, control, and high voltage interface circuitry |
| US4301383A (en) * | 1979-10-05 | 1981-11-17 | Harris Corporation | Complementary IGFET buffer with improved bipolar output |
| JPS5693428A (en) * | 1979-12-10 | 1981-07-29 | Reliance Electric Co | High voltage and large current solid state switching circuit |
| JPS56100461A (en) * | 1980-01-17 | 1981-08-12 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor ic device |
| US4512815A (en) * | 1980-05-27 | 1985-04-23 | National Semiconductor Corporation | Simplified BIFET process |
| US4356416A (en) * | 1980-07-17 | 1982-10-26 | General Electric Company | Voltage controlled non-saturating semiconductor switch and voltage converter circuit employing same |
| JPH0783252B2 (ja) * | 1982-07-12 | 1995-09-06 | 株式会社日立製作所 | 半導体集積回路装置 |
| US4616146A (en) * | 1984-09-04 | 1986-10-07 | Motorola, Inc. | BI-CMOS driver circuit |
-
1982
- 1982-07-12 JP JP57119815A patent/JPH0783252B2/ja not_active Expired - Lifetime
-
1983
- 1983-07-11 EP EP83106796A patent/EP0099100B1/de not_active Expired
- 1983-07-11 EP EP87118836A patent/EP0279943B1/de not_active Expired - Lifetime
- 1983-07-11 EP EP92122153A patent/EP0543426A1/de not_active Withdrawn
- 1983-07-11 DE DE87118836T patent/DE3382717T2/de not_active Expired - Fee Related
- 1983-07-11 DE DE8383106796T patent/DE3378291D1/de not_active Expired
- 1983-07-12 KR KR1019830003180A patent/KR920004919B1/ko not_active IP Right Cessation
-
1987
- 1987-04-30 US US07/045,216 patent/US4719373A/en not_active Expired - Lifetime
- 1987-12-01 US US07/127,206 patent/US5001366A/en not_active Expired - Lifetime
- 1987-12-01 US US07/127,183 patent/US4829201A/en not_active Expired - Lifetime
- 1987-12-01 US US07/127,184 patent/US4890017A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0543426A1 (de) | 1993-05-26 |
| EP0279943B1 (de) | 1993-10-06 |
| US4890017A (en) | 1989-12-26 |
| JPH0783252B2 (ja) | 1995-09-06 |
| DE3378291D1 (en) | 1988-11-24 |
| EP0099100A1 (de) | 1984-01-25 |
| US4719373A (en) | 1988-01-12 |
| US5001366A (en) | 1991-03-19 |
| EP0099100B1 (de) | 1988-10-19 |
| KR920004919B1 (ko) | 1992-06-22 |
| EP0279943A1 (de) | 1988-08-31 |
| DE3382717T2 (de) | 1994-05-05 |
| JPS5911034A (ja) | 1984-01-20 |
| US4829201A (en) | 1989-05-09 |
| KR840005629A (ko) | 1984-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3382717D1 (de) | Torschaltung mit Feldeffekt- und Bipolartransistoren. | |
| DE3483461D1 (de) | Kombinierte bipolartransistor-feldeffekttransistor-schaltung. | |
| DE3689445D1 (de) | Schutzschaltung für einen Bipolartransistor mit isoliertem Gate. | |
| DE3856480T2 (de) | MOS-Feldeffekt-Transistor mit Leitfähigkeitsmodulation | |
| DE3679971D1 (de) | Modulationsdotierter feldeffekttransistor. | |
| DE3583119D1 (de) | Bipolartransistor mit heterouebergang. | |
| DE3788525D1 (de) | Feldeffekttransistoranordnungen. | |
| DE3381069D1 (de) | Feldeffekttransistor mit modulierter beweglichkeit. | |
| DE3689433D1 (de) | Feldeffekttransistor. | |
| DE3576612D1 (de) | Halbleiteranordnung mit mos-transistoren. | |
| DE3782748D1 (de) | Feldeffekttransistor mit isoliertem gate. | |
| DE3751098D1 (de) | Feldeffekttransistor. | |
| NL189432C (nl) | Microgolfoscillator met veldeffecttransistor (fet). | |
| DE3484534D1 (de) | Vergleichsschaltung mit wenig transistoren. | |
| DE3482355D1 (de) | Feldeffecttransistor mit hoher elektronenbeweglichkeit. | |
| DE3686180D1 (de) | Vertikaler mos-transistor mit peripherer schaltung. | |
| DE3483576D1 (de) | Tor-schaltungsanordnung. | |
| DE3677141D1 (de) | Feldeffekttransistoranordnung. | |
| DE3673509D1 (de) | Feldeffekttransistorverstaerkerschaltungen. | |
| DE3381925D1 (de) | Logische schaltung mit stromgesteuerten anreicherungsfeldeffekttransistoren. | |
| DE3481796D1 (de) | Feldeffekttransistor mit isolierter gateelektrode. | |
| DE3688318D1 (de) | Feldeffekttransistor. | |
| DE3780895D1 (de) | Komplementaerer feldeffekt-transistor mit isoliertem gate. | |
| DE3581842D1 (de) | Integrierte halbleiterschaltung mit komplementaeren feldeffekttransistoren. | |
| DE3584737D1 (de) | Taktsignalgeberschaltung mit feldeffekttransistoren. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |