DE3463882D1 - Mos-transistor amplifier - Google Patents

Mos-transistor amplifier

Info

Publication number
DE3463882D1
DE3463882D1 DE8484101514T DE3463882T DE3463882D1 DE 3463882 D1 DE3463882 D1 DE 3463882D1 DE 8484101514 T DE8484101514 T DE 8484101514T DE 3463882 T DE3463882 T DE 3463882T DE 3463882 D1 DE3463882 D1 DE 3463882D1
Authority
DE
Germany
Prior art keywords
mos transistor
transistor amplifier
amplifier
mos
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484101514T
Other languages
English (en)
Inventor
Ikuya Arai
Toshinori Murata
Masafumi Kazumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=12141482&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3463882(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3463882D1 publication Critical patent/DE3463882D1/de
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34Dc amplifiers in which all stages are dc-coupled
    • H03F3/343Dc amplifiers in which all stages are dc-coupled with semiconductor devices only
    • H03F3/345Dc amplifiers in which all stages are dc-coupled with semiconductor devices only with field-effect devices
DE8484101514T 1983-02-18 1984-02-14 Mos-transistor amplifier Expired DE3463882D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58024558A JPS59151510A (ja) 1983-02-18 1983-02-18 C−mos負荷型増幅器

Publications (1)

Publication Number Publication Date
DE3463882D1 true DE3463882D1 (de) 1987-06-25

Family

ID=12141482

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484101514T Expired DE3463882D1 (de) 1983-02-18 1984-02-14 Mos-transistor amplifier

Country Status (5)

Country Link
US (1) US4563654A (de)
EP (1) EP0121688B1 (de)
JP (1) JPS59151510A (de)
KR (1) KR900000992B1 (de)
DE (1) DE3463882D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4641194A (en) * 1984-08-27 1987-02-03 Rca Corporation Kinescope driver in a digital video signal processing system
DE3663764D1 (en) * 1986-03-21 1989-07-06 Itt Ind Gmbh Deutsche Differential amplifier with nmos transistors
JP2559032B2 (ja) * 1986-09-13 1996-11-27 富士通株式会社 差動増幅回路
US4841254A (en) * 1987-05-29 1989-06-20 International Business Machines Corp. CMOS precision gain amplifier
US5600275A (en) * 1994-04-29 1997-02-04 Analog Devices, Inc. Low-voltage CMOS comparator with offset cancellation
US5600322A (en) * 1994-04-29 1997-02-04 Analog Devices, Inc. Low-voltage CMOS analog-to-digital converter
WO1995030279A1 (en) * 1994-04-29 1995-11-09 Analog Devices, Inc. Charge redistribution analog-to-digital converter with system calibration
US5668551A (en) * 1995-01-18 1997-09-16 Analog Devices, Inc. Power-up calibration of charge redistribution analog-to-digital converter
US5621409A (en) * 1995-02-15 1997-04-15 Analog Devices, Inc. Analog-to-digital conversion with multiple charge balance conversions
US5798660A (en) * 1996-06-13 1998-08-25 Tritech Microelectronics International Pte Ltd. Cascoded differential pair amplifier with current injection for gain enhancement
JPH11251848A (ja) * 1998-03-05 1999-09-17 Nec Corp チューナブルmos線形トランスコンダクタンス・アンプ
US6909310B2 (en) * 2003-01-30 2005-06-21 Agilent Technologies, Inc. CMOS controlled-impedance transmission line driver
JP2005223627A (ja) * 2004-02-05 2005-08-18 Asahi Kasei Microsystems Kk 演算増幅回路
JP2017112537A (ja) * 2015-12-17 2017-06-22 シナプティクス・ジャパン合同会社 インバータ回路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3913026A (en) * 1974-04-08 1975-10-14 Bulova Watch Co Inc Mos transistor gain block
JPS5341057A (en) * 1976-09-26 1978-04-14 Masao Takagi Drainage treating method
GB1592800A (en) * 1977-12-30 1981-07-08 Philips Electronic Associated Linear amplifier
GB2058248B (en) * 1979-09-12 1982-09-22 Butterworth System Inc Sealing arrangement

Also Published As

Publication number Publication date
EP0121688A1 (de) 1984-10-17
JPS59151510A (ja) 1984-08-30
KR900000992B1 (ko) 1990-02-23
KR840008091A (ko) 1984-12-12
US4563654A (en) 1986-01-07
EP0121688B1 (de) 1987-05-20

Similar Documents

Publication Publication Date Title
DE3881304T2 (de) MOS-Transistor.
DE3381367D1 (de) Mos-transistor.
KR860700189A (ko) 전계효과 트랜지스터용 무변압기 구동회로
IT1176216B (it) Procedimento per fabbricare transistor ad effetto di campo
DE3477448D1 (de) Complementary mos circuit
DE3485038D1 (de) Mos-speicher.
DE3873839T2 (de) Mos-leistungstransistoranordnung.
DE3788525T2 (de) Feldeffekttransistoranordnungen.
DE3866016D1 (de) Mos-transistor-brueckenschaltung.
GB8333696D0 (en) Transistor amplifier
DK139285D0 (da) Mos dosimeter
DE3689433T2 (de) Feldeffekttransistor.
DE3751098T2 (de) Feldeffekttransistor.
DE3576612D1 (de) Halbleiteranordnung mit mos-transistoren.
DE3463882D1 (de) Mos-transistor amplifier
DE3676259D1 (de) Geschuetzte mos-transistorschaltung.
FI811919L (fi) Skyddskrets foer transistor
DE3686180T2 (de) Vertikaler mos-transistor mit peripherer schaltung.
DE3583064D1 (de) Supraleitender transistor.
DE3673509D1 (de) Feldeffekttransistorverstaerkerschaltungen.
DE3370245D1 (de) A mos transistor
DE68925092T2 (de) MOS-Feldeffekttransistor
DE3688318D1 (de) Feldeffekttransistor.
KR860005445A (ko) Mos형 집적회로
DE59206386D1 (de) MOS-Transistor

Legal Events

Date Code Title Description
8363 Opposition against the patent
8339 Ceased/non-payment of the annual fee