DE3465849D1 - Semiconductor devise for generating electromagnetic radiation - Google Patents

Semiconductor devise for generating electromagnetic radiation

Info

Publication number
DE3465849D1
DE3465849D1 DE8484200473T DE3465849T DE3465849D1 DE 3465849 D1 DE3465849 D1 DE 3465849D1 DE 8484200473 T DE8484200473 T DE 8484200473T DE 3465849 T DE3465849 T DE 3465849T DE 3465849 D1 DE3465849 D1 DE 3465849D1
Authority
DE
Germany
Prior art keywords
electromagnetic radiation
generating electromagnetic
semiconductor devise
devise
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484200473T
Other languages
English (en)
Inventor
Ferd Elton Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3465849D1 publication Critical patent/DE3465849D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
DE8484200473T 1983-04-07 1984-04-04 Semiconductor devise for generating electromagnetic radiation Expired DE3465849D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8301215A NL8301215A (nl) 1983-04-07 1983-04-07 Halfgeleiderinrichting voor het opwekken van electromagnetische straling.

Publications (1)

Publication Number Publication Date
DE3465849D1 true DE3465849D1 (en) 1987-10-08

Family

ID=19841666

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484200473T Expired DE3465849D1 (en) 1983-04-07 1984-04-04 Semiconductor devise for generating electromagnetic radiation

Country Status (5)

Country Link
US (1) US4644378A (de)
EP (1) EP0124924B1 (de)
JP (1) JPS59197187A (de)
DE (1) DE3465849D1 (de)
NL (1) NL8301215A (de)

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JPS6140082A (ja) * 1984-07-31 1986-02-26 Sharp Corp 半導体装置
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JPH0669109B2 (ja) * 1984-12-07 1994-08-31 シャ−プ株式会社 光半導体装置
JPS61137383A (ja) * 1984-12-07 1986-06-25 Sharp Corp 光半導体装置
JPS61210679A (ja) * 1985-03-15 1986-09-18 Sony Corp 半導体装置
JPS61220492A (ja) * 1985-03-27 1986-09-30 Nec Corp 量子井戸レ−ザ
JPH0750795B2 (ja) * 1985-03-28 1995-05-31 キヤノン株式会社 発光素子
JPS61244086A (ja) * 1985-04-22 1986-10-30 Sharp Corp 半導体レ−ザ素子
JPS6218082A (ja) * 1985-07-16 1987-01-27 Sharp Corp 半導体レ−ザ素子
FR2589630B1 (fr) * 1985-07-23 1988-06-17 Deveaud Benoit Absorbant saturable a tres faibles temps de commutation
CA1279394C (en) * 1985-07-26 1991-01-22 Naoki Chinone Multiple quantum well type semiconductor laser
US4881235A (en) * 1985-07-26 1989-11-14 Hitachi, Ltd. Semiconductor laser having a multiple quantum well structure doped with impurities
JPS62165385A (ja) * 1986-01-14 1987-07-21 Nec Corp 半導体発光装置
JPS62188295A (ja) * 1986-02-13 1987-08-17 Sharp Corp 半導体レ−ザ素子
JPS63153887A (ja) * 1986-08-08 1988-06-27 Sharp Corp 半導体レ−ザ素子
JPS63207186A (ja) * 1987-02-24 1988-08-26 Nippon Telegr & Teleph Corp <Ntt> 可視光領域光素子用材料
JP2544378B2 (ja) * 1987-03-25 1996-10-16 株式会社日立製作所 光半導体装置
EP0393135B1 (de) * 1987-12-23 1994-11-23 BRITISH TELECOMMUNICATIONS public limited company Halbleiterheterostruktur
CA1299719C (en) * 1989-01-13 1992-04-28 Hui Chun Liu Semiconductor superlattice infrared source
JPH0327577A (ja) * 1989-06-23 1991-02-05 イーストマン・コダックジャパン株式会社 発光ダイオ―ドアレイ
DE69132934T2 (de) * 1990-05-23 2002-08-29 Uniphase Opto Holdings Inc Strahlungsemittierende Halbleiteranordnung und Verfahren zum Herstellen derselben
US5244749A (en) * 1992-08-03 1993-09-14 At&T Bell Laboratories Article comprising an epitaxial multilayer mirror
US5362977A (en) * 1992-12-28 1994-11-08 At&T Bell Laboratories Single mirror light-emitting diodes with enhanced intensity
US6603784B1 (en) 1998-12-21 2003-08-05 Honeywell International Inc. Mechanical stabilization of lattice mismatched quantum wells
US7049761B2 (en) 2000-02-11 2006-05-23 Altair Engineering, Inc. Light tube and power supply circuit
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
CA2581614A1 (en) * 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US8118447B2 (en) 2007-12-20 2012-02-21 Altair Engineering, Inc. LED lighting apparatus with swivel connection
US7712918B2 (en) 2007-12-21 2010-05-11 Altair Engineering , Inc. Light distribution using a light emitting diode assembly
US8360599B2 (en) 2008-05-23 2013-01-29 Ilumisys, Inc. Electric shock resistant L.E.D. based light
US7976196B2 (en) 2008-07-09 2011-07-12 Altair Engineering, Inc. Method of forming LED-based light and resulting LED-based light
US7946729B2 (en) 2008-07-31 2011-05-24 Altair Engineering, Inc. Fluorescent tube replacement having longitudinally oriented LEDs
US8674626B2 (en) 2008-09-02 2014-03-18 Ilumisys, Inc. LED lamp failure alerting system
US8256924B2 (en) 2008-09-15 2012-09-04 Ilumisys, Inc. LED-based light having rapidly oscillating LEDs
US8324817B2 (en) 2008-10-24 2012-12-04 Ilumisys, Inc. Light and light sensor
US7938562B2 (en) 2008-10-24 2011-05-10 Altair Engineering, Inc. Lighting including integral communication apparatus
US8653984B2 (en) 2008-10-24 2014-02-18 Ilumisys, Inc. Integration of LED lighting control with emergency notification systems
US8214084B2 (en) 2008-10-24 2012-07-03 Ilumisys, Inc. Integration of LED lighting with building controls
US8444292B2 (en) 2008-10-24 2013-05-21 Ilumisys, Inc. End cap substitute for LED-based tube replacement light
US8901823B2 (en) 2008-10-24 2014-12-02 Ilumisys, Inc. Light and light sensor
US8556452B2 (en) 2009-01-15 2013-10-15 Ilumisys, Inc. LED lens
US8362710B2 (en) 2009-01-21 2013-01-29 Ilumisys, Inc. Direct AC-to-DC converter for passive component minimization and universal operation of LED arrays
US8664880B2 (en) 2009-01-21 2014-03-04 Ilumisys, Inc. Ballast/line detection circuit for fluorescent replacement lamps
US8330381B2 (en) 2009-05-14 2012-12-11 Ilumisys, Inc. Electronic circuit for DC conversion of fluorescent lighting ballast
US8299695B2 (en) 2009-06-02 2012-10-30 Ilumisys, Inc. Screw-in LED bulb comprising a base having outwardly projecting nodes
US20100309649A1 (en) * 2009-06-09 2010-12-09 Epistar Corporation Photoelectronic device having a variable resistor structure
EP2446715A4 (de) 2009-06-23 2013-09-11 Ilumisys Inc Beleuchtungsvorrichtung mit leds und schaltstromsteuerungssystem
WO2011119958A1 (en) 2010-03-26 2011-09-29 Altair Engineering, Inc. Inside-out led bulb
EP2553320A4 (de) 2010-03-26 2014-06-18 Ilumisys Inc Led-licht mit thermoelektrischem generator
WO2011119907A2 (en) 2010-03-26 2011-09-29 Altair Engineering, Inc. Led light tube with dual sided light distribution
US8454193B2 (en) 2010-07-08 2013-06-04 Ilumisys, Inc. Independent modules for LED fluorescent light tube replacement
US8596813B2 (en) 2010-07-12 2013-12-03 Ilumisys, Inc. Circuit board mount for LED light tube
EP2633227B1 (de) 2010-10-29 2018-08-29 iLumisys, Inc. Mechanismen zur minimierung des risikos von elektroschocks während der installation einer lichtröhre
US8870415B2 (en) 2010-12-09 2014-10-28 Ilumisys, Inc. LED fluorescent tube replacement light with reduced shock hazard
US9072171B2 (en) 2011-08-24 2015-06-30 Ilumisys, Inc. Circuit board mount for LED light
US9184518B2 (en) 2012-03-02 2015-11-10 Ilumisys, Inc. Electrical connector header for an LED-based light
WO2014008463A1 (en) 2012-07-06 2014-01-09 Ilumisys, Inc. Power supply assembly for led-based light tube
US9271367B2 (en) 2012-07-09 2016-02-23 Ilumisys, Inc. System and method for controlling operation of an LED-based light
US9285084B2 (en) 2013-03-14 2016-03-15 Ilumisys, Inc. Diffusers for LED-based lights
US9267650B2 (en) 2013-10-09 2016-02-23 Ilumisys, Inc. Lens for an LED-based light
US9574717B2 (en) 2014-01-22 2017-02-21 Ilumisys, Inc. LED-based light with addressed LEDs
US9510400B2 (en) 2014-05-13 2016-11-29 Ilumisys, Inc. User input systems for an LED-based light
US10161568B2 (en) 2015-06-01 2018-12-25 Ilumisys, Inc. LED-based light with canted outer walls

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US3982207A (en) * 1975-03-07 1976-09-21 Bell Telephone Laboratories, Incorporated Quantum effects in heterostructure lasers
US4205329A (en) * 1976-03-29 1980-05-27 Bell Telephone Laboratories, Incorporated Periodic monolayer semiconductor structures grown by molecular beam epitaxy
US4261771A (en) * 1979-10-31 1981-04-14 Bell Telephone Laboratories, Incorporated Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy
US4439782A (en) * 1980-11-21 1984-03-27 University Of Illinois Foundation Semiconductor device with heterojunction of Alx Ga1-x As--AlAs--Ga
DE3276979D1 (en) * 1981-05-06 1987-09-17 Univ Illinois Method of forming wide bandgap region within multilayer semiconductors
JPS57187986A (en) * 1981-05-15 1982-11-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting element

Also Published As

Publication number Publication date
JPS59197187A (ja) 1984-11-08
EP0124924B1 (de) 1987-09-02
US4644378A (en) 1987-02-17
NL8301215A (nl) 1984-11-01
JPH048956B2 (de) 1992-02-18
EP0124924A1 (de) 1984-11-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee