DE3466255D1 - Method for forming a stream of atoms and utilization thereof in an atomic jet epitaxy process and device (e.j.a.) - Google Patents
Method for forming a stream of atoms and utilization thereof in an atomic jet epitaxy process and device (e.j.a.)Info
- Publication number
- DE3466255D1 DE3466255D1 DE8484901081T DE3466255T DE3466255D1 DE 3466255 D1 DE3466255 D1 DE 3466255D1 DE 8484901081 T DE8484901081 T DE 8484901081T DE 3466255 T DE3466255 T DE 3466255T DE 3466255 D1 DE3466255 D1 DE 3466255D1
- Authority
- DE
- Germany
- Prior art keywords
- utilization
- atoms
- stream
- forming
- epitaxy process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title 2
- 238000000407 epitaxy Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/04—Pattern deposit, e.g. by using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/063—Heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/08—Epitaxial-layer growth by condensing ionised vapours
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/903—Dendrite or web or cage technique
- Y10S117/904—Laser beam
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8303691A FR2542327B1 (de) | 1983-03-07 | 1983-03-07 | |
PCT/FR1984/000052 WO1984003524A1 (fr) | 1983-03-07 | 1984-03-06 | Procede de formation d'un flux d'atomes et son utilisation dans un procede et un dispositif d'epitaxie par jets atomiques (e.j.a.) |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3466255D1 true DE3466255D1 (en) | 1987-10-22 |
Family
ID=9286562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484901081T Expired DE3466255D1 (en) | 1983-03-07 | 1984-03-06 | Method for forming a stream of atoms and utilization thereof in an atomic jet epitaxy process and device (e.j.a.) |
Country Status (6)
Country | Link |
---|---|
US (1) | US4664940A (de) |
EP (1) | EP0143792B1 (de) |
JP (1) | JPS60500860A (de) |
DE (1) | DE3466255D1 (de) |
FR (1) | FR2542327B1 (de) |
WO (1) | WO1984003524A1 (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5294285A (en) * | 1986-02-07 | 1994-03-15 | Canon Kabushiki Kaisha | Process for the production of functional crystalline film |
US5200230A (en) * | 1987-06-29 | 1993-04-06 | Dunfries Investments Limited | Laser coating process |
US4987007A (en) * | 1988-04-18 | 1991-01-22 | Board Of Regents, The University Of Texas System | Method and apparatus for producing a layer of material from a laser ion source |
US5411797A (en) * | 1988-04-18 | 1995-05-02 | Board Of Regents, The University Of Texas System | Nanophase diamond films |
US5322589A (en) * | 1989-02-09 | 1994-06-21 | Fujitsu Limited | Process and apparatus for recrystallization of semiconductor layer |
JPH0717477B2 (ja) * | 1989-03-15 | 1995-03-01 | シャープ株式会社 | 化合物半導体のエピタキシャル成長方法 |
US5002798A (en) * | 1989-04-10 | 1991-03-26 | University Of Dayton | Method for forming thin solid lubricious films and film articles made thereby |
JPH0826451B2 (ja) * | 1989-04-13 | 1996-03-13 | 松下電器産業株式会社 | スパッタリング方法 |
DE3925085C1 (de) * | 1989-07-28 | 1991-01-10 | Battelle-Institut Ev, 6000 Frankfurt, De | |
US5207884A (en) * | 1990-12-24 | 1993-05-04 | Conductus, Inc. | Superconductor deposition system |
DE4229399C2 (de) * | 1992-09-03 | 1999-05-27 | Deutsch Zentr Luft & Raumfahrt | Verfahren und Vorrichtung zum Herstellen einer Funktionsstruktur eines Halbleiterbauelements |
JP3255469B2 (ja) * | 1992-11-30 | 2002-02-12 | 三菱電機株式会社 | レーザ薄膜形成装置 |
US5733609A (en) * | 1993-06-01 | 1998-03-31 | Wang; Liang | Ceramic coatings synthesized by chemical reactions energized by laser plasmas |
WO1996012389A1 (en) * | 1994-10-18 | 1996-04-25 | Edsi, Inc. | Apparatus for depositing a layer of material on a substrate |
JP3386302B2 (ja) * | 1995-12-20 | 2003-03-17 | 三菱電機株式会社 | 化合物半導体へのn型ドーピング方法およびこれを用いた化学ビーム堆積方法並びにこれらの結晶成長方法によって形成された化合物半導体結晶およびこの化合物半導体結晶によって構成された電子デバイスおよび光デバイス |
DE19628102A1 (de) * | 1996-07-12 | 1998-01-15 | Bayerische Motoren Werke Ag | Vakuumbeschichtungsanlage mit einer Beschichtungskammer und zumindest einer Quellenkammer |
US5886320A (en) * | 1996-09-03 | 1999-03-23 | International Business Machines Corporation | Laser ablation with transmission matching for promoting energy coupling to a film stack |
US6113751A (en) * | 1998-08-06 | 2000-09-05 | Lockheed Martin Corporation | Electromagnetic beam assisted deposition method for depositing a material on an irradiated substrate |
US6344084B1 (en) * | 1998-09-11 | 2002-02-05 | Japan Science And Technology Corporation | Combinatorial molecular layer epitaxy device |
US6562705B1 (en) * | 1999-10-26 | 2003-05-13 | Kabushiki Kaisha Toshiba | Method and apparatus for manufacturing semiconductor element |
JP2001276702A (ja) * | 2000-03-28 | 2001-10-09 | Toshiba Corp | 成膜装置及び成膜方法 |
WO2001075491A1 (en) * | 2000-04-03 | 2001-10-11 | 3M Innovative Properties Company | Selective deposition of material on a substrate according to an interference pattern |
US6391528B1 (en) | 2000-04-03 | 2002-05-21 | 3M Innovative Properties Company | Methods of making wire grid optical elements by preferential deposition of material on a substrate |
WO2008104346A2 (en) * | 2007-02-27 | 2008-09-04 | Carl Zeiss Laser Optics Gmbh | Continuous coating installation and methods for producing crystalline thin films and solar cells |
US8895892B2 (en) * | 2008-10-23 | 2014-11-25 | Corning Incorporated | Non-contact glass shearing device and method for scribing or cutting a moving glass sheet |
JP4948629B2 (ja) * | 2010-07-20 | 2012-06-06 | ウシオ電機株式会社 | レーザリフトオフ方法 |
US8164092B2 (en) | 2010-10-18 | 2012-04-24 | The University Of Utah Research Foundation | PIN structures including intrinsic gallium arsenide, devices incorporating the same, and related methods |
DE102018127262A1 (de) * | 2018-10-31 | 2020-04-30 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Beschichtungsvorrichtung sowie Verfahren zum Beschichten eines Substrats |
CN114654097B (zh) * | 2022-02-24 | 2023-03-07 | 苏州大学 | 基于分子束外延原位激光干涉光刻方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3166961D1 (en) * | 1980-08-05 | 1984-12-06 | Belge Etat | Process for the manufacture of polycrystalline films of semiconductors formed by compounds or elements, and films thus obtained |
JPS5864368A (ja) * | 1981-10-12 | 1983-04-16 | Inoue Japax Res Inc | 化学メツキ方法 |
FR2544752B1 (fr) * | 1983-04-25 | 1985-07-05 | Commissariat Energie Atomique | Procede de croissance amorphe d'un corps avec cristallisation sous rayonnement |
-
1983
- 1983-03-07 FR FR8303691A patent/FR2542327B1/fr not_active Expired
-
1984
- 1984-03-06 WO PCT/FR1984/000052 patent/WO1984003524A1/fr active IP Right Grant
- 1984-03-06 EP EP84901081A patent/EP0143792B1/de not_active Expired
- 1984-03-06 JP JP59501109A patent/JPS60500860A/ja active Pending
- 1984-03-06 DE DE8484901081T patent/DE3466255D1/de not_active Expired
- 1984-03-06 US US06/678,550 patent/US4664940A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO1984003524A1 (fr) | 1984-09-13 |
US4664940A (en) | 1987-05-12 |
JPS60500860A (ja) | 1985-06-06 |
FR2542327B1 (de) | 1986-03-07 |
FR2542327A1 (de) | 1984-09-14 |
EP0143792A1 (de) | 1985-06-12 |
EP0143792B1 (de) | 1987-09-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |