DE3481957D1 - Halbleiteranordnung. - Google Patents

Halbleiteranordnung.

Info

Publication number
DE3481957D1
DE3481957D1 DE8484113078T DE3481957T DE3481957D1 DE 3481957 D1 DE3481957 D1 DE 3481957D1 DE 8484113078 T DE8484113078 T DE 8484113078T DE 3481957 T DE3481957 T DE 3481957T DE 3481957 D1 DE3481957 D1 DE 3481957D1
Authority
DE
Germany
Prior art keywords
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484113078T
Other languages
English (en)
Inventor
Takayasu C O Patent Di Sakurai
C O Patent Division Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3481957D1 publication Critical patent/DE3481957D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
DE8484113078T 1984-02-22 1984-10-30 Halbleiteranordnung. Expired - Lifetime DE3481957D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59032068A JPS60176121A (ja) 1984-02-22 1984-02-22 電圧降下回路

Publications (1)

Publication Number Publication Date
DE3481957D1 true DE3481957D1 (de) 1990-05-17

Family

ID=12348556

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484113078T Expired - Lifetime DE3481957D1 (de) 1984-02-22 1984-10-30 Halbleiteranordnung.

Country Status (4)

Country Link
US (1) US4683382A (de)
EP (1) EP0157905B1 (de)
JP (1) JPS60176121A (de)
DE (1) DE3481957D1 (de)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2721151B2 (ja) * 1986-04-01 1998-03-04 株式会社東芝 半導体集積回路装置
JPS6370451A (ja) * 1986-09-11 1988-03-30 Mitsubishi Electric Corp 半導体集積回路
US4730122A (en) * 1986-09-18 1988-03-08 International Business Machines Corporation Power supply adapter systems
AU1314388A (en) * 1987-03-16 1988-09-15 Stern, D.S. Selective power gating
NL8701472A (nl) * 1987-06-24 1989-01-16 Philips Nv Geintegreerde schakeling met meegeintegreerde, voedingsspanningsverlagende spanningsregelaar.
JPH01100788A (ja) * 1987-10-13 1989-04-19 Hitachi Ltd 半導体集積回路装置
US5402375A (en) * 1987-11-24 1995-03-28 Hitachi, Ltd Voltage converter arrangement for a semiconductor memory
US5272393A (en) * 1987-11-24 1993-12-21 Hitachi, Ltd. Voltage converter of semiconductor device
US5051995A (en) * 1988-03-14 1991-09-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having a test mode setting circuit
JPH01258459A (ja) * 1988-04-08 1989-10-16 Seikosha Co Ltd 電池を電源とした集積回路
JPH02136097A (ja) * 1988-11-17 1990-05-24 Canon Inc 電源装置
KR910005599B1 (ko) * 1989-05-01 1991-07-31 삼성전자 주식회사 고밀도 반도체 메모리장치의 전원 공급전압 변환회로
KR920010749B1 (ko) * 1989-06-10 1992-12-14 삼성전자 주식회사 반도체 집적소자의 내부전압 변환회로
JP3124781B2 (ja) * 1990-03-30 2001-01-15 富士通株式会社 半導体集積回路装置
JPH03283562A (ja) * 1990-03-30 1991-12-13 Sony Corp 半導体集積回路装置
JP2778199B2 (ja) * 1990-04-27 1998-07-23 日本電気株式会社 内部降圧回路
US5220206A (en) * 1990-06-29 1993-06-15 Analog Devices, Inc. Control apparatus with improved recovery from power reduction, and storage device therefor
US5229709A (en) * 1990-06-29 1993-07-20 U.S. Philips Corp. Integrated circuit with temperature compensation
JP3001014B2 (ja) * 1991-03-13 2000-01-17 富士通株式会社 バイアス電圧発生回路
JP3076097B2 (ja) * 1991-08-26 2000-08-14 日本電気株式会社 基準電位発生回路
JPH05314769A (ja) * 1992-05-13 1993-11-26 Mitsubishi Electric Corp 半導体集積回路装置
US5781784A (en) * 1992-07-09 1998-07-14 Zilog, Inc. Dynamic power management of solid state memories
US6005436A (en) * 1992-10-07 1999-12-21 Matsushita Electric Industrial Co., Ltd. Internal reduced-voltage generator for semiconductor integrated circuit
JP2925422B2 (ja) * 1993-03-12 1999-07-28 株式会社東芝 半導体集積回路
JPH07105682A (ja) * 1993-10-06 1995-04-21 Nec Corp ダイナミックメモリ装置
US5440519A (en) * 1994-02-01 1995-08-08 Micron Semiconductor, Inc. Switched memory expansion buffer
JP3571770B2 (ja) * 1994-09-16 2004-09-29 キヤノン株式会社 光電変換装置
CN1109347C (zh) * 1994-10-19 2003-05-21 英特尔公司 快速存储器的电源
US5594360A (en) * 1994-10-19 1997-01-14 Intel Corporation Low current reduced area programming voltage detector for flash memory
US5539338A (en) * 1994-12-01 1996-07-23 Analog Devices, Inc. Input or output selectable circuit pin
KR0172371B1 (ko) * 1995-04-26 1999-03-30 윤종용 반도체 메모리장치의 전원전압 발생회로
US5712589A (en) * 1995-05-30 1998-01-27 Motorola Inc. Apparatus and method for performing adaptive power regulation for an integrated circuit
KR100466457B1 (ko) 1995-11-08 2005-06-16 마츠시타 덴끼 산교 가부시키가이샤 신호전송회로,신호수신회로및신호송수신회로,신호전송방법,신호수신방법및신호송수신방법과반도체집적회로및그제어방법
US6888444B1 (en) 1995-11-08 2005-05-03 Matsushita Electric Industrial Co., Ltd. Signal transmitting circuit, signal receiving circuit, signal transmitting/receiving circuit, signal transmitting method, signal receiving method, signal transmitting/receiving method, semiconductor integrated circuit, and control method thereof
JP3592423B2 (ja) * 1996-01-26 2004-11-24 株式会社ルネサステクノロジ 半導体集積回路装置
JP3319960B2 (ja) * 1996-10-17 2002-09-03 富士通株式会社 半導体装置
US5898235A (en) * 1996-12-31 1999-04-27 Stmicroelectronics, Inc. Integrated circuit with power dissipation control
DE19816806B4 (de) * 1998-04-16 2012-07-12 Robert Bosch Gmbh Zwei elektronische Schaltungen zur Stromregelung mit parallelgeschalteten Stellgliedern mit temperaturabhängiger Aufteilung der Teilströme
JP2000021170A (ja) * 1998-04-30 2000-01-21 Mitsubishi Electric Corp 半導体集積回路装置
JP3802239B2 (ja) 1998-08-17 2006-07-26 株式会社東芝 半導体集積回路
US6333671B1 (en) 1999-11-03 2001-12-25 International Business Machines Corporation Sleep mode VDD detune for power reduction
JP4583588B2 (ja) * 2000-12-08 2010-11-17 ルネサスエレクトロニクス株式会社 半導体装置
US6661279B2 (en) * 2001-04-11 2003-12-09 Kabushiki Kaisha Toshiba Semiconductor integrated circuit which outputs first internal power supply voltage and second internal power supply voltage lower than first internal supply power voltage
JP2003051548A (ja) * 2001-08-06 2003-02-21 Sharp Corp 半導体集積回路装置およびそれを用いた携帯端末
US6819165B2 (en) * 2002-05-30 2004-11-16 Analog Devices, Inc. Voltage regulator with dynamically boosted bias current
US6897715B2 (en) * 2002-05-30 2005-05-24 Analog Devices, Inc. Multimode voltage regulator
US6707747B2 (en) * 2002-07-08 2004-03-16 Micron Technology, Inc. Dynamic input thresholds for semiconductor devices
JP2004047810A (ja) * 2002-07-12 2004-02-12 Renesas Technology Corp 半導体集積回路
AU2003250431A1 (en) * 2002-08-28 2004-03-19 Koninklijke Philips Electronics N.V. Method for reducing power consumption in a state retaining circuit, state retaining circuit and electronic device
US20040212421A1 (en) * 2003-02-25 2004-10-28 Junichi Naka Standard voltage generation circuit
KR100629258B1 (ko) * 2003-03-20 2006-09-29 삼성전자주식회사 내부 전압 발생회로
KR100558477B1 (ko) * 2003-04-28 2006-03-07 삼성전자주식회사 반도체 장치의 내부 전압 발생회로
JP3768202B2 (ja) * 2003-05-13 2006-04-19 松下電器産業株式会社 半導体集積回路
TWI293464B (en) * 2003-07-08 2008-02-11 Winbond Electronics Corp Two phase internal voltage generator
JP2005107948A (ja) * 2003-09-30 2005-04-21 Seiko Instruments Inc ボルテージ・レギュレータ
US7042280B1 (en) * 2003-12-15 2006-05-09 National Semiconductor Corporation Over-current protection circuit
DE102004001577B4 (de) * 2004-01-10 2007-08-02 Infineon Technologies Ag Halbleiter-Speicherschaltung und Verfahren zum Betreiben derselben in einem Bereitschaftsmodus
JP4488800B2 (ja) * 2004-06-14 2010-06-23 株式会社ルネサステクノロジ 半導体集積回路装置
JP4666342B2 (ja) * 2004-07-26 2011-04-06 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US7154794B2 (en) * 2004-10-08 2006-12-26 Lexmark International, Inc. Memory regulator system with test mode
US7219244B2 (en) * 2005-08-25 2007-05-15 International Business Machines Corporation Control circuitry for power gating virtual power supply rails at differing voltage potentials
DE102008027392B4 (de) 2008-06-09 2019-03-21 Atmel Corp. Schaltung und Verfahren zum Betrieb einer Schaltung
JP5241641B2 (ja) * 2009-07-27 2013-07-17 三洋電機株式会社 半導体集積回路
DE102019116700B4 (de) 2018-07-10 2021-03-04 Elmos Semiconductor Se Stützkondensatorfreier Low-Drop-Spannungsregler mit großem Spannungsbereich mit einem DIMOS Transistor und Verfahren zu dessen Betrieb
DE102018116669B4 (de) * 2018-07-10 2021-03-04 Elmos Semiconductor Se Verfahren zum Betrieb eines stützkondensatorfreien Low-Drop-Spannungsreglers mit großem Spannungsbereich
DE102018116667B4 (de) * 2018-07-10 2021-03-04 Elmos Semiconductor Se Stützkondensatorfreier Low-Drop-Spannungsregler mit großem Spannungsbereich mit einem DIMOS- und einem NMOS-Transistor als Lasttransistor und Spannungsreglersystem

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4054830A (en) * 1974-03-25 1977-10-18 Landis Tool Company Regulated power supply
JPS54137246A (en) * 1978-04-17 1979-10-24 Oki Electric Ind Co Ltd Memory unit
GB2034937B (en) * 1978-11-14 1983-01-06 Philips Electronic Associated Regulated power supply
JPS56153415A (en) * 1980-04-28 1981-11-27 Shindengen Electric Mfg Co Ltd Parallel redundancy regulated power supply device
US4482985A (en) * 1981-04-17 1984-11-13 Hitachi, Ltd. Semiconductor integrated circuit
US4390833A (en) * 1981-05-22 1983-06-28 Rockwell International Corporation Voltage regulator circuit
IT1211141B (it) * 1981-12-04 1989-09-29 Ates Componenti Elettron Circuito limitatore-trasduttore disegnali in alternata codificati in forma binaria, come stadio d'ingresso di un circuito integrato a igfet.
US4581551A (en) * 1984-03-28 1986-04-08 Motorola, Inc. Input/output circuit for use with various voltages

Also Published As

Publication number Publication date
EP0157905B1 (de) 1990-04-11
JPH0547848B2 (de) 1993-07-19
US4683382A (en) 1987-07-28
JPS60176121A (ja) 1985-09-10
EP0157905A2 (de) 1985-10-16
EP0157905A3 (en) 1987-07-29

Similar Documents

Publication Publication Date Title
DE3481957D1 (de) Halbleiteranordnung.
DE3583302D1 (de) Halbleiteranordnung.
DE3684557D1 (de) Waferintegrierte halbleiteranordnung.
DE3585711D1 (de) Halbleiterspeicheranordnung.
DE3683316D1 (de) Halbleiteranordnung.
DE3585864D1 (de) Hochgeschwindigkeitshalbleiteranordnung.
DE3583575D1 (de) Komplementaere halbleiteranordnung.
DE3679108D1 (de) Halbleiteranordnungen.
DE3583091D1 (de) Halbleiterspeicheranordnung.
DE3577944D1 (de) Halbleiterspeicheranordnung.
DE3582653D1 (de) Halbleiteranordnung.
DE3584799D1 (de) Halbleitervorrichtung.
DE3583897D1 (de) Halbleiterschalter.
DE3582376D1 (de) Halbleiterspeicheranordnung.
DE3667879D1 (de) Halbleiteranordnung.
DE3586377T2 (de) Halbleiterspeicheranordnung.
DE3581370D1 (de) Halbleitervorrichtung.
DE3576236D1 (de) Halbleiterspeicheranordnung.
DE3577367D1 (de) Halbleiterspeicheranordnung.
DE3580993D1 (de) Halbleiterspeicheranordnung.
DE3575225D1 (de) Halbleiterspeicheranordnung.
DE3586556T2 (de) Halbleiterspeicheranordnung.
DE3576754D1 (de) Halbleiterspeicheranordnung.
DE3582960D1 (de) Halbleiterspeicheranordnung.
DE3586675D1 (de) Halbleiterspeicheranordnung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)