DE3482847D1 - Halbleiterspeichervorrichtung mit einem schwebenden gate. - Google Patents

Halbleiterspeichervorrichtung mit einem schwebenden gate.

Info

Publication number
DE3482847D1
DE3482847D1 DE8484104278T DE3482847T DE3482847D1 DE 3482847 D1 DE3482847 D1 DE 3482847D1 DE 8484104278 T DE8484104278 T DE 8484104278T DE 3482847 T DE3482847 T DE 3482847T DE 3482847 D1 DE3482847 D1 DE 3482847D1
Authority
DE
Germany
Prior art keywords
storage device
floating gate
semiconductor storage
semiconductor
floating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484104278T
Other languages
English (en)
Inventor
Tetsuya C O Patent Divi Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58068080A external-priority patent/JPS59194474A/ja
Priority claimed from JP58138855A external-priority patent/JPS6031267A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3482847D1 publication Critical patent/DE3482847D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
DE8484104278T 1983-04-18 1984-04-16 Halbleiterspeichervorrichtung mit einem schwebenden gate. Expired - Lifetime DE3482847D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58068080A JPS59194474A (ja) 1983-04-18 1983-04-18 半導体記憶装置
JP58138855A JPS6031267A (ja) 1983-07-29 1983-07-29 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3482847D1 true DE3482847D1 (de) 1990-09-06

Family

ID=26409320

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484104278T Expired - Lifetime DE3482847D1 (de) 1983-04-18 1984-04-16 Halbleiterspeichervorrichtung mit einem schwebenden gate.

Country Status (3)

Country Link
US (1) US5084745A (de)
EP (1) EP0123249B1 (de)
DE (1) DE3482847D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0204498A3 (de) * 1985-05-29 1988-09-21 Advanced Micro Devices, Inc. EEPROM-Zelle und Verfahren zur HerstellUng
US4947221A (en) * 1985-11-29 1990-08-07 General Electric Company Memory cell for a dense EPROM
JPH088316B2 (ja) * 1990-01-31 1996-01-29 株式会社東芝 紫外線消去型不揮発性半導体メモリ装置
US5317179A (en) * 1991-09-23 1994-05-31 Integrated Silicon Solution, Inc. Non-volatile semiconductor memory cell
DE19626089C2 (de) * 1996-06-28 2002-01-31 Siemens Ag Speicherzelle und Verfahren zu ihrer Herstellung
KR100205309B1 (ko) 1996-07-23 1999-07-01 구본준 비휘발성 메모리셀 및 이 비휘발성 메모리셀을 프로그래밍하는 방법
US5761120A (en) * 1996-08-27 1998-06-02 Peng; Jack Zezhong Floating gate FPGA cell with select device on drain
TW327701B (en) * 1997-07-21 1998-03-01 United Semiconductor Corp The flash memory cell

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3919711A (en) * 1973-02-26 1975-11-11 Intel Corp Erasable floating gate device
US4004159A (en) * 1973-05-18 1977-01-18 Sanyo Electric Co., Ltd. Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation
US4087795A (en) * 1974-09-20 1978-05-02 Siemens Aktiengesellschaft Memory field effect storage device
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell
JPS5440043A (en) * 1977-09-05 1979-03-28 Toshiba Corp Semiconductor memory
DE2743422A1 (de) * 1977-09-27 1979-03-29 Siemens Ag Wortweise loeschbarer, nicht fluechtiger speicher in floating-gate-technik
JPS6046554B2 (ja) * 1978-12-14 1985-10-16 株式会社東芝 半導体記憶素子及び記憶回路
US4314265A (en) * 1979-01-24 1982-02-02 Xicor, Inc. Dense nonvolatile electrically-alterable memory devices with four layer electrodes
JPS55153375A (en) * 1979-05-18 1980-11-29 Nec Corp Non-volatile semiconductor memory device
US4297719A (en) * 1979-08-10 1981-10-27 Rca Corporation Electrically programmable control gate injected floating gate solid state memory transistor and method of making same
US4399523A (en) * 1979-08-24 1983-08-16 Centre Electronique Horloger Sa Non-volatile, electrically erasable and reprogrammable memory element
IT1209227B (it) * 1980-06-04 1989-07-16 Sgs Microelettronica Spa Cella di memoria non volatile a 'gate' flottante elettricamente alterabile.
US4404577A (en) * 1980-06-30 1983-09-13 International Business Machines Corp. Electrically alterable read only memory cell
JPS5728364A (en) * 1980-07-28 1982-02-16 Fujitsu Ltd Semiconductor memory device
JPS5780779A (en) * 1980-11-07 1982-05-20 Fujitsu Ltd Semiconductor non-volatile memory
JPS57157573A (en) * 1981-03-25 1982-09-29 Fujitsu Ltd Semiconductor non-volatile memory cell
JPS5812367A (ja) * 1981-07-16 1983-01-24 Matsushita Electronics Corp 半導体記憶装置
JPS5839067A (ja) * 1981-09-01 1983-03-07 Seiko Instr & Electronics Ltd 不揮発性半導体メモリ
JPS5864068A (ja) * 1981-10-14 1983-04-16 Agency Of Ind Science & Technol 不揮発性半導体メモリの書き込み方法
JPS58121678A (ja) * 1982-01-12 1983-07-20 Mitsubishi Electric Corp 半導体不揮発性記憶装置
JPS59500343A (ja) * 1982-03-09 1984-03-01 ア−ルシ−エ−　コ−ポレ−シヨン 電気的に改変可能の不揮発性浮動ゲ−ト記憶装置
US4577215A (en) * 1983-02-18 1986-03-18 Rca Corporation Dual word line, electrically alterable, nonvolatile floating gate memory device
JPS5961062A (ja) * 1982-09-30 1984-04-07 Fujitsu Ltd 半導体記憶装置

Also Published As

Publication number Publication date
EP0123249A3 (en) 1986-07-30
EP0123249A2 (de) 1984-10-31
US5084745A (en) 1992-01-28
EP0123249B1 (de) 1990-08-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee