DE3484514D1 - Halbleiterspeichergeraet. - Google Patents

Halbleiterspeichergeraet.

Info

Publication number: DE3484514D1
Authority: DE; Germany
Prior art keywords: storage device; semiconductor storage; semiconductor; storage
Prior art date: 1983-02-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE8484300802T

Other languages

English (en)

Inventor

Masanobu Yoshida

Kiyoshi Itano

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fujitsu Ltd

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-02-08

Filing date

1984-02-08

Publication date

1991-06-06

1984-02-08 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

1991-06-06 Application granted granted Critical

1991-06-06 Publication of DE3484514D1 publication Critical patent/DE3484514D1/de

2004-02-09 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/835—Masking faults in memories by using spares or by reconfiguring using programmable devices with roll call arrangements for redundant substitutions
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store

DE8484300802T 1983-02-08 1984-02-08 Halbleiterspeichergeraet. Expired - Fee Related DE3484514D1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP58018027A JPS59144098A (ja)	1983-02-08	1983-02-08	半導体記憶装置

Publications (1)

Publication Number	Publication Date
DE3484514D1 true DE3484514D1 (de)	1991-06-06

Family

ID=11960179

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8484300802T Expired - Fee Related DE3484514D1 (de)	1983-02-08	1984-02-08	Halbleiterspeichergeraet.

Country Status (7)

Country	Link
US (1)	US4604730A (de)
EP (1)	EP0116464B1 (de)
JP (1)	JPS59144098A (de)
KR (1)	KR890005156B1 (de)
CA (1)	CA1214553A (de)
DE (1)	DE3484514D1 (de)
IE (1)	IE56815B1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6148200A (ja) *	1984-08-14	1986-03-08	Fujitsu Ltd	半導体記憶装置
JPS6355799A (ja) *	1986-08-26	1988-03-10	Mitsubishi Electric Corp	半導体記憶装置
JP2590897B2 (ja) *	1987-07-20	1997-03-12	日本電気株式会社	半導体メモリ
US4807191A (en) *	1988-01-04	1989-02-21	Motorola, Inc.	Redundancy for a block-architecture memory
JPH01167760U (de) *	1988-05-16	1989-11-27
US5134584A (en) *	1988-07-22	1992-07-28	Vtc Incorporated	Reconfigurable memory
JPH0289299A (ja) *	1988-09-27	1990-03-29	Nec Corp	半導体記憶装置
US7190617B1 (en)	1989-04-13	2007-03-13	Sandisk Corporation	Flash EEprom system
DE69033262T2 (de)	1989-04-13	2000-02-24	Sandisk Corp	EEPROM-Karte mit Austauch von fehlerhaften Speicherzellen und Zwischenspeicher
US7447069B1 (en)	1989-04-13	2008-11-04	Sandisk Corporation	Flash EEprom system
KR910005601B1 (ko) *	1989-05-24	1991-07-31	삼성전자주식회사	리던던트 블럭을 가지는 반도체 메모리장치
JP2837433B2 (ja) *	1989-06-05	1998-12-16	三菱電機株式会社	半導体記憶装置における不良ビット救済回路
JPH03116498A (ja) *	1989-09-28	1991-05-17	Nec Ic Microcomput Syst Ltd	記憶装置
GB8926004D0 (en) *	1989-11-17	1990-01-10	Inmos Ltd	Repairable memory circuit
US5126973A (en) *	1990-02-14	1992-06-30	Texas Instruments Incorporated	Redundancy scheme for eliminating defects in a memory device
JPH03241598A (ja) *	1990-02-19	1991-10-28	Fujitsu Ltd	シグネチャー回路
US5274593A (en) *	1990-09-28	1993-12-28	Intergraph Corporation	High speed redundant rows and columns for semiconductor memories
JPH06111596A (ja) *	1990-10-09	1994-04-22	Texas Instr Inc <Ti>	メモリ
JP3001252B2 (ja) *	1990-11-16	2000-01-24	株式会社日立製作所	半導体メモリ
JPH06203595A (ja) *	1991-08-30	1994-07-22	Texas Instr Inc <Ti>	ユニバーサル・モジューラ・メモリ
KR100296850B1 (ko) *	1992-05-28	2001-10-24	썬 마이크로시스템즈, 인코포레이티드	캐시램용다수의뱅크열용장성초기화제어기
US5471479A (en) *	1992-08-06	1995-11-28	Motorola, Inc.	Arrangement for column sparing of memory
JP2980472B2 (ja) *	1992-12-21	1999-11-22	株式会社東芝	半導体記憶装置
JP2833574B2 (ja) *	1996-03-28	1998-12-09	日本電気株式会社	不揮発性半導体記憶装置
US6249464B1 (en)	1999-12-15	2001-06-19	Cypress Semiconductor Corp.	Block redundancy in ultra low power memory circuits
JP2007257791A (ja) *	2006-03-24	2007-10-04	Fujitsu Ltd	半導体記憶装置
US8837192B2 (en) *	2012-10-19	2014-09-16	Taiwan Semiconductor Manufacturing Company Limited	N-bit rom cell
DE112017007727T5 (de) *	2017-07-06	2020-03-19	Hewlett-Packard Development Company, L.P.	Decoder für speicher von fluidausstossvorrichtungen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4281398A (en) *	1980-02-12	1981-07-28	Mostek Corporation	Block redundancy for memory array
CA1158775A (en) *	1980-06-04	1983-12-13	Thomas L. Phinney	Computer annotation system
JPS57150197A (en) *	1981-03-11	1982-09-16	Nippon Telegr & Teleph Corp <Ntt>	Storage circuit
US4471472A (en) *	1982-02-05	1984-09-11	Advanced Micro Devices, Inc.	Semiconductor memory utilizing an improved redundant circuitry configuration

1983
- 1983-02-08 JP JP58018027A patent/JPS59144098A/ja active Granted
1984
- 1984-02-01 CA CA000446571A patent/CA1214553A/en not_active Expired
- 1984-02-07 IE IE285/84A patent/IE56815B1/en not_active IP Right Cessation
- 1984-02-08 DE DE8484300802T patent/DE3484514D1/de not_active Expired - Fee Related
- 1984-02-08 US US06/578,000 patent/US4604730A/en not_active Expired - Fee Related
- 1984-02-08 EP EP84300802A patent/EP0116464B1/de not_active Expired - Lifetime
- 1984-02-08 KR KR1019840000580A patent/KR890005156B1/ko not_active IP Right Cessation

Also Published As

Publication number	Publication date
EP0116464A3 (en)	1987-06-03
EP0116464A2 (de)	1984-08-22
IE840285L (en)	1984-08-08
CA1214553A (en)	1986-11-25
JPS59144098A (ja)	1984-08-17
KR840008073A (ko)	1984-12-12
EP0116464B1 (de)	1991-05-02
US4604730A (en)	1986-08-05
KR890005156B1 (ko)	1989-12-14
JPS6237479B2 (de)	1987-08-12
IE56815B1 (en)	1991-12-18

Legal Events

Date	Code	Title	Description
1992-05-27	8364	No opposition during term of opposition
1994-02-17	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
DE3576433D1 (de)	1990-04-12	Halbleiterspeichervorrichtung.
DE3484514D1 (de)	1991-06-06	Halbleiterspeichergeraet.
DE3581773D1 (de)	1991-03-28	Halbleiterspeichervorrichtung.
DE3584189D1 (de)	1991-10-31	Halbleiterspeichergeraet.
DE3177183D1 (de)	1990-06-21	Halbleiterspeichergeraet.
DE3484232D1 (de)	1991-04-11	Halbleiterspeichervorrichtung.
DE3684509D1 (de)	1992-04-30	Halbleiterspeichergeraet.
DE3681082D1 (de)	1991-10-02	Halbleiterspeichervorrichtung.
DE3685361D1 (de)	1992-06-25	Halbleiterspeichervorrichtung.
DE3382212D1 (de)	1991-04-18	Halbleiterspeicher.
DE3381545D1 (de)	1990-06-13	Halbleiterspeicheranordnung.
DE3382802T2 (de)	1996-07-25	Halbleiterspeichergerät
DE3482935D1 (de)	1990-09-13	Halbleiterlaservorrichtung.
DE3485174D1 (de)	1991-11-21	Halbleiterspeicheranordnung.
DE3485625D1 (de)	1992-05-07	Halbleiterspeicheranordnung.
DE3484180D1 (de)	1991-04-04	Halbleiterspeicheranordnung.
DE3481355D1 (de)	1990-03-15	Halbleiterspeicheranordnung.
DE3587052D1 (de)	1993-03-18	Halbleiterspeichergeraet.
IT8322373A0 (it)	1983-08-02	Dispositivo semiconduttore.
DE3486094T2 (de)	1993-06-17	Halbleiterspeicheranordnung.
DE3882150D1 (de)	1993-08-12	Halbleiterspeichergeraet.
DE3484630D1 (de)	1991-07-04	Halbleiterspeicheranordnung.
DE3486082D1 (de)	1993-04-08	Halbleiterspeicheranordnung.
DE3481395D1 (de)	1990-03-29	Halbleiterspeicheranordnung.
DE3177173D1 (de)	1990-05-23	Halbleiterspeichervorrichtung.