DE3567678D1 - Method and apparatus for reducing temperature variations across a semiconductor wafer during heating - Google Patents

Method and apparatus for reducing temperature variations across a semiconductor wafer during heating

Info

Publication number
DE3567678D1
DE3567678D1 DE8585902835T DE3567678T DE3567678D1 DE 3567678 D1 DE3567678 D1 DE 3567678D1 DE 8585902835 T DE8585902835 T DE 8585902835T DE 3567678 T DE3567678 T DE 3567678T DE 3567678 D1 DE3567678 D1 DE 3567678D1
Authority
DE
Germany
Prior art keywords
semiconductor wafer
during heating
temperature variations
wafer during
reducing temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585902835T
Other languages
English (en)
Inventor
Herbert Lord
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of DE3567678D1 publication Critical patent/DE3567678D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
DE8585902835T 1984-06-13 1985-05-17 Method and apparatus for reducing temperature variations across a semiconductor wafer during heating Expired DE3567678D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/620,246 US4560420A (en) 1984-06-13 1984-06-13 Method for reducing temperature variations across a semiconductor wafer during heating
PCT/US1985/000926 WO1986000096A1 (en) 1984-06-13 1985-05-17 Method and apparatus for reducing temperature variations across a semiconductor wafer during heating

Publications (1)

Publication Number Publication Date
DE3567678D1 true DE3567678D1 (en) 1989-02-23

Family

ID=24485172

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585902835T Expired DE3567678D1 (en) 1984-06-13 1985-05-17 Method and apparatus for reducing temperature variations across a semiconductor wafer during heating

Country Status (5)

Country Link
US (1) US4560420A (de)
EP (1) EP0182870B1 (de)
JP (1) JPS61502433A (de)
DE (1) DE3567678D1 (de)
WO (1) WO1986000096A1 (de)

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US5444217A (en) 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5580388A (en) * 1993-01-21 1996-12-03 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
JP3184000B2 (ja) * 1993-05-10 2001-07-09 株式会社東芝 薄膜の形成方法およびその装置
US5439850A (en) * 1993-09-08 1995-08-08 North Carolina State University Method for forming a layer of uniform thickness on a semiconductor wafer during rapid thermal processing
US6086680A (en) * 1995-08-22 2000-07-11 Asm America, Inc. Low-mass susceptor
US5775416A (en) * 1995-11-17 1998-07-07 Cvc Products, Inc. Temperature controlled chuck for vacuum processing
JP2001522142A (ja) 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 改良された低質量ウェハ支持システム
US6084213A (en) * 1998-05-18 2000-07-04 Steag C.V.D. Sytems, Ltd. Method and apparatus for increasing temperature uniformity of heated wafers
US6127658A (en) * 1998-08-04 2000-10-03 Steag C.V.D. Systems, Ltd. Wafer heating apparatus and method with radiation absorptive peripheral barrier blocking stray radiation
US6449428B2 (en) * 1998-12-11 2002-09-10 Mattson Technology Corp. Gas driven rotating susceptor for rapid thermal processing (RTP) system
US6634882B2 (en) 2000-12-22 2003-10-21 Asm America, Inc. Susceptor pocket profile to improve process performance
US7033445B2 (en) * 2001-12-27 2006-04-25 Asm America, Inc. Gridded susceptor
US20050170314A1 (en) * 2002-11-27 2005-08-04 Richard Golden Dental pliers design with offsetting jaw and pad elements for assisting in removing upper and lower teeth and method for removing teeth utilizing the dental plier design
AU2003287837A1 (en) 2002-12-20 2004-07-14 Vortek Industries Ltd Methods and systems for supporting a workpiece and for heat-treating the workpiece
US6709267B1 (en) 2002-12-27 2004-03-23 Asm America, Inc. Substrate holder with deep annular groove to prevent edge heat loss
WO2005059991A1 (en) 2003-12-19 2005-06-30 Mattson Technology Canada Inc. Apparatuses and methods for suppressing thermally induced motion of a workpiece
US20050247668A1 (en) * 2004-05-06 2005-11-10 Silicon Genesis Corporation Method for smoothing a film of material using a ring structure
US7411129B2 (en) * 2004-07-13 2008-08-12 Southwire Company Electrical cable having a surface with reduced coefficient of friction
JP4348542B2 (ja) * 2004-08-24 2009-10-21 信越半導体株式会社 石英治具及び半導体製造装置
JP4934595B2 (ja) 2005-01-18 2012-05-16 エーエスエム アメリカ インコーポレイテッド 薄膜成長用反応装置
US7184657B1 (en) 2005-09-17 2007-02-27 Mattson Technology, Inc. Enhanced rapid thermal processing apparatus and method
US8603248B2 (en) * 2006-02-10 2013-12-10 Veeco Instruments Inc. System and method for varying wafer surface temperature via wafer-carrier temperature offset
JP5967859B2 (ja) 2006-11-15 2016-08-10 マトソン テクノロジー、インコーポレイテッド 熱処理中の被加工物を支持するシステムおよび方法
DE102007058002B4 (de) * 2007-12-03 2016-03-17 Mattson Thermal Products Gmbh Vorrichtung zum thermischen Behandeln von scheibenförmigen Halbleitersubstraten
KR101610269B1 (ko) 2008-05-16 2016-04-07 맷슨 테크놀로지, 인크. 워크피스 파손 방지 방법 및 장치
US8801857B2 (en) 2008-10-31 2014-08-12 Asm America, Inc. Self-centering susceptor ring assembly
US9905443B2 (en) * 2011-03-11 2018-02-27 Applied Materials, Inc. Reflective deposition rings and substrate processing chambers incorporating same
US9048268B2 (en) * 2013-03-05 2015-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method and equipment for removing photoresist residue after dry etch
JP6559706B2 (ja) 2014-01-27 2019-08-14 ビーコ インストルメンツ インコーポレイテッド 化学蒸着システム用の複合半径を有する保持ポケットを有するウェハキャリア
US10872804B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
US10872803B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
USD914620S1 (en) 2019-01-17 2021-03-30 Asm Ip Holding B.V. Vented susceptor
USD920936S1 (en) 2019-01-17 2021-06-01 Asm Ip Holding B.V. Higher temperature vented susceptor
US11404302B2 (en) 2019-05-22 2022-08-02 Asm Ip Holding B.V. Substrate susceptor using edge purging
US11764101B2 (en) 2019-10-24 2023-09-19 ASM IP Holding, B.V. Susceptor for semiconductor substrate processing

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US4081313A (en) * 1975-01-24 1978-03-28 Applied Materials, Inc. Process for preparing semiconductor wafers with substantially no crystallographic slip
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US4041278A (en) * 1975-05-19 1977-08-09 General Electric Company Heating apparatus for temperature gradient zone melting
SE7710800L (sv) * 1976-10-05 1978-04-06 Western Electric Co Forfarande for astadkommande av ett epitaxiellt skikt pa ett substrat
US4101759A (en) * 1976-10-26 1978-07-18 General Electric Company Semiconductor body heater
US4097226A (en) * 1976-10-26 1978-06-27 General Electric Company Furnace for practising temperature gradient zone melting
JPS56108231A (en) * 1980-02-01 1981-08-27 Ushio Inc Annealing method of semiconductor wafer
US4331485A (en) * 1980-03-03 1982-05-25 Arnon Gat Method for heat treating semiconductor material using high intensity CW lamps
JPS5764937A (en) * 1980-10-09 1982-04-20 Ushio Inc Annealing device
JPS5764936A (en) * 1980-10-09 1982-04-20 Ushio Inc Annealing device
JPS57208146A (en) * 1981-06-17 1982-12-21 Nec Corp Forming method for insulating film to compound semiconductor
US4468259A (en) * 1981-12-04 1984-08-28 Ushio Denki Kabushiki Kaisha Uniform wafer heating by controlling light source and circumferential heating of wafer
US4469529A (en) * 1981-12-04 1984-09-04 Ushio Denki Kabushiki Kaisha Method for heating semiconductor wafer by means of application of radiated light with supplemental circumferential heating
JPS58223320A (ja) * 1982-06-22 1983-12-24 Ushio Inc 不純物拡散方法

Also Published As

Publication number Publication date
JPS61502433A (ja) 1986-10-23
EP0182870B1 (de) 1989-01-18
EP0182870A1 (de) 1986-06-04
US4560420A (en) 1985-12-24
WO1986000096A1 (en) 1986-01-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee