DE3567991D1 - Large photosensitive device and method of employing it - Google Patents
Large photosensitive device and method of employing itInfo
- Publication number
- DE3567991D1 DE3567991D1 DE8585402611T DE3567991T DE3567991D1 DE 3567991 D1 DE3567991 D1 DE 3567991D1 DE 8585402611 T DE8585402611 T DE 8585402611T DE 3567991 T DE3567991 T DE 3567991T DE 3567991 D1 DE3567991 D1 DE 3567991D1
- Authority
- DE
- Germany
- Prior art keywords
- employing
- photosensitive device
- large photosensitive
- photosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8419919A FR2575602B1 (fr) | 1984-12-27 | 1984-12-27 | Dispositif photosensible de grand format, et procede d'utilisation |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3567991D1 true DE3567991D1 (en) | 1989-03-02 |
Family
ID=9311029
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585402611T Expired DE3567991D1 (en) | 1984-12-27 | 1985-12-24 | Large photosensitive device and method of employing it |
Country Status (5)
Country | Link |
---|---|
US (1) | US4799094A (de) |
EP (1) | EP0189710B1 (de) |
JP (1) | JPS61156869A (de) |
DE (1) | DE3567991D1 (de) |
FR (1) | FR2575602B1 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8602021A (nl) * | 1986-08-07 | 1988-03-01 | Optische Ind De Oude Delft Nv | Werkwijze voor het vervaardigen van een beeldopneeminrichting voor radiografische toepassingen. |
EP0275446A1 (de) * | 1986-12-19 | 1988-07-27 | Heimann GmbH | Röntgenstrahlendetektor |
EP0360886A1 (de) * | 1988-09-26 | 1990-04-04 | Siemens Aktiengesellschaft | Röntgendetektor |
JPH02164067A (ja) * | 1988-12-19 | 1990-06-25 | Fujitsu Ltd | X線画像センサ |
JPH0334456A (ja) * | 1989-06-30 | 1991-02-14 | Nippon Steel Corp | pinダイオードとその製造方法及び密着型イメージセンサ |
CA2065246C (en) * | 1989-09-06 | 2001-11-13 | Larry E. Antonuk | Multi-element-amorphous-silicon-detector-array for real-time imaging and dosimetry of megavoltage photons and diagnostic x-rays |
US5262649A (en) * | 1989-09-06 | 1993-11-16 | The Regents Of The University Of Michigan | Thin-film, flat panel, pixelated detector array for real-time digital imaging and dosimetry of ionizing radiation |
US5017989A (en) * | 1989-12-06 | 1991-05-21 | Xerox Corporation | Solid state radiation sensor array panel |
IL96561A0 (en) * | 1989-12-28 | 1991-09-16 | Minnesota Mining & Mfg | Amorphous silicon sensor |
FR2674661B1 (fr) * | 1991-03-26 | 1993-05-14 | Thomson Csf | Structure de commande matricielle pour ecran de visualisation. |
FR2679687B1 (fr) * | 1991-07-26 | 1997-03-14 | Commissariat Energie Atomique | Dispositif ou prise opu d'affichage d'images en grande dimension. |
US5198673A (en) * | 1992-01-23 | 1993-03-30 | General Electric Company | Radiation image detector with optical gain selenium photosensors |
US5254480A (en) * | 1992-02-20 | 1993-10-19 | Minnesota Mining And Manufacturing Company | Process for producing a large area solid state radiation detector |
DE69623659T2 (de) | 1996-05-08 | 2003-05-08 | Ifire Technology Inc | Hochauflösender flacher sensor für strahlungsabbildungssystem |
US5771271A (en) * | 1997-04-16 | 1998-06-23 | Infimed, Inc. | Phototimer for radiology imaging |
DE59813628D1 (de) | 1997-10-01 | 2006-08-17 | Siemens Ag | Röntgendetektor |
US6486470B2 (en) | 1998-11-02 | 2002-11-26 | 1294339 Ontario, Inc. | Compensation circuit for use in a high resolution amplified flat panel for radiation imaging |
US7279120B2 (en) | 2003-09-04 | 2007-10-09 | Intematix Corporation | Doped cadmium tungstate scintillator with improved radiation hardness |
JP2008518224A (ja) * | 2004-10-29 | 2008-05-29 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 医療df及びrf画像化並びにctにおいて使用するgosセラミックシンチレーションファイバ光学x線画像化プレート |
DE102006002083B4 (de) | 2006-01-16 | 2009-06-10 | Siemens Ag | Halterung mit Röntgendetektor |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3488508A (en) * | 1965-12-30 | 1970-01-06 | Rca Corp | Solid state image sensor panel |
GB1258572A (de) * | 1968-03-07 | 1971-12-30 | ||
US3935446A (en) * | 1975-02-28 | 1976-01-27 | General Electric Company | Apparatus for sensing radiation and providing electrical readout |
US4146904A (en) * | 1977-12-19 | 1979-03-27 | General Electric Company | Radiation detector |
FR2469805A1 (fr) * | 1979-11-09 | 1981-05-22 | Thomson Csf | Matrice de detection d'un rayonnement electromagnetique et intensificateur d'images radiologiques comportant une telle matrice |
US4327291A (en) * | 1980-06-16 | 1982-04-27 | Texas Instruments Incorporated | Infrared charge injection device imaging system |
FR2501943B1 (fr) * | 1981-03-13 | 1986-01-17 | Thomson Csf | Dispositif photosensible solide a deux dimensions et dispositif d'analyse d'image, utilisant le transfert de charges electriques, comportant un tel dispositif |
FR2517864A1 (fr) * | 1981-12-07 | 1983-06-10 | Telecommunications Sa | Dispositif d'enregistrement et de lecture d'images |
US4520380A (en) * | 1982-09-29 | 1985-05-28 | Sovonics Solar Systems | Amorphous semiconductors equivalent to crystalline semiconductors |
US4630090A (en) * | 1984-09-25 | 1986-12-16 | Texas Instruments Incorporated | Mercury cadmium telluride infrared focal plane devices having step insulator and process for making same |
-
1984
- 1984-12-27 FR FR8419919A patent/FR2575602B1/fr not_active Expired
-
1985
- 1985-12-16 US US06/809,508 patent/US4799094A/en not_active Expired - Fee Related
- 1985-12-24 EP EP85402611A patent/EP0189710B1/de not_active Expired
- 1985-12-24 DE DE8585402611T patent/DE3567991D1/de not_active Expired
- 1985-12-25 JP JP60299686A patent/JPS61156869A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US4799094A (en) | 1989-01-17 |
FR2575602B1 (fr) | 1987-01-30 |
EP0189710A1 (de) | 1986-08-06 |
FR2575602A1 (fr) | 1986-07-04 |
JPS61156869A (ja) | 1986-07-16 |
EP0189710B1 (de) | 1989-01-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |