DE3572244D1 - Stability testing of semiconductor memories - Google Patents

Stability testing of semiconductor memories

Info

Publication number
DE3572244D1
DE3572244D1 DE8585103736T DE3572244T DE3572244D1 DE 3572244 D1 DE3572244 D1 DE 3572244D1 DE 8585103736 T DE8585103736 T DE 8585103736T DE 3572244 T DE3572244 T DE 3572244T DE 3572244 D1 DE3572244 D1 DE 3572244D1
Authority
DE
Germany
Prior art keywords
semiconductor memories
stability testing
testing
stability
memories
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585103736T
Other languages
English (en)
Inventor
Georg Andrusch
Joachim Baisch
Horst Dipl Ing Barsuhn
Friedrich C Dipl Ing Wernicke
Siegfried K Dr Dipl I Wiedmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
International Business Machines Corp
Original Assignee
IBM Deutschland GmbH
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM Deutschland GmbH, International Business Machines Corp filed Critical IBM Deutschland GmbH
Application granted granted Critical
Publication of DE3572244D1 publication Critical patent/DE3572244D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/025—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in signal lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50016—Marginal testing, e.g. race, voltage or current testing of retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
DE8585103736T 1985-03-29 1985-03-29 Stability testing of semiconductor memories Expired DE3572244D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP85103736A EP0195839B1 (de) 1985-03-29 1985-03-29 Stabilitätsprüfung für Halbleiterspeicher

Publications (1)

Publication Number Publication Date
DE3572244D1 true DE3572244D1 (en) 1989-09-14

Family

ID=8193407

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585103736T Expired DE3572244D1 (en) 1985-03-29 1985-03-29 Stability testing of semiconductor memories

Country Status (5)

Country Link
US (1) US4713814A (de)
EP (1) EP0195839B1 (de)
JP (1) JPS61224199A (de)
CA (1) CA1238124A (de)
DE (1) DE3572244D1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4779043A (en) * 1987-08-26 1988-10-18 Hewlett-Packard Company Reversed IC test device and method
JPH01208795A (ja) * 1988-02-16 1989-08-22 Toshiba Corp 半導体記憶装置
GB2277822A (en) * 1993-05-04 1994-11-09 Motorola Inc A memory system with selectable row power down
TW389908B (en) * 1998-01-16 2000-05-11 Winbond Electronics Corp Patching method capable of reducing the additional leakage current caused by manufacturing defects
CN108231134B (zh) * 2018-02-08 2021-06-25 芯颖科技有限公司 Ram良率补救方法及装置
CN112071357B (zh) * 2020-08-27 2022-08-02 南京航天航空大学 基于fpga的sram存储器充放电效应测试系统及方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3995215A (en) * 1974-06-26 1976-11-30 International Business Machines Corporation Test technique for semiconductor memory array
US4004222A (en) * 1974-11-20 1977-01-18 Semi Test system for semiconductor memory cell
DE2612666C2 (de) * 1976-03-25 1982-11-18 Ibm Deutschland Gmbh, 7000 Stuttgart Integrierte, invertierende logische Schaltung
US4418403A (en) * 1981-02-02 1983-11-29 Mostek Corporation Semiconductor memory cell margin test circuit
US4430735A (en) * 1981-05-26 1984-02-07 Burroughs Corporation Apparatus and technique for testing IC memories
US4503538A (en) * 1981-09-04 1985-03-05 Robert Bosch Gmbh Method and system to recognize change in the storage characteristics of a programmable memory
JPS5853775A (ja) * 1981-09-26 1983-03-30 Fujitsu Ltd Ｉｃメモリ試験方法
US4502140A (en) * 1983-07-25 1985-02-26 Mostek Corporation GO/NO GO margin test circuit for semiconductor memory
US4606025A (en) * 1983-09-28 1986-08-12 International Business Machines Corp. Automatically testing a plurality of memory arrays on selected memory array testers
US4608669A (en) * 1984-05-18 1986-08-26 International Business Machines Corporation Self contained array timing
US4612630A (en) * 1984-07-27 1986-09-16 Harris Corporation EEPROM margin testing design

Also Published As

Publication number Publication date
CA1238124A (en) 1988-06-14
EP0195839A1 (de) 1986-10-01
US4713814A (en) 1987-12-15
JPH0355919B2 (de) 1991-08-26
JPS61224199A (ja) 1986-10-04
EP0195839B1 (de) 1989-08-09

Similar Documents

Publication Publication Date Title
EP0225059A3 (en) Semiconductor memory
EP0202873A3 (en) Semiconductor memory device
EP0198590A3 (en) Semiconductor memory device
KR860006106A (ko) 반도체 메모리
GB2253289B (en) Functional testing of memories
GB8516853D0 (en) Manufacture of semiconductor structures
KR870001664A (ko) 반도체 기억 장치
EP0191435A3 (en) Semiconductor memory cell
HK85095A (en) Semiconductor memory
GB8709786D0 (en) Testing of conductive workpieces
EP0523760A3 (en) Serial accessed semiconductor memory
EP0197505A3 (en) Semiconductor memory device
EP0190070A3 (en) Semiconductor structure
GB2184290B (en) Semiconductor memory devices
NZ218050A (en) Test for the presence of htlv-1v
EP0213835A3 (en) Semiconductor memory device
EP0194939A3 (en) Semiconductor memory device
EP0193209A3 (en) Semiconductor memory device
GB8626659D0 (en) Semiconductor memory device
GB8604500D0 (en) Semiconductor
DE3572244D1 (en) Stability testing of semiconductor memories
GB8515250D0 (en) Testing of integrated circuits
GB8514924D0 (en) Semiconductor memories
KR870006655A (ko) 반도체 기억장치
EP0212946A3 (en) Semiconductor memory device

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee