DE3575050D1 - Verfahren zur herstellung einer monolitisch-integrierten, optischen schaltung enthaltend einen laser und eine nach diesem verfahren erhaltene schaltung. - Google Patents

Verfahren zur herstellung einer monolitisch-integrierten, optischen schaltung enthaltend einen laser und eine nach diesem verfahren erhaltene schaltung.

Info

Publication number
DE3575050D1
DE3575050D1 DE8585400626T DE3575050T DE3575050D1 DE 3575050 D1 DE3575050 D1 DE 3575050D1 DE 8585400626 T DE8585400626 T DE 8585400626T DE 3575050 T DE3575050 T DE 3575050T DE 3575050 D1 DE3575050 D1 DE 3575050D1
Authority
DE
Germany
Prior art keywords
monolitically
laser
producing
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585400626T
Other languages
English (en)
Inventor
Louis Menigaux
Alain Carenco
Pierre Sansonetti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SANSONETTI PIERRE PARIS FR
Original Assignee
SANSONETTI PIERRE PARIS FR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SANSONETTI PIERRE PARIS FR filed Critical SANSONETTI PIERRE PARIS FR
Application granted granted Critical
Publication of DE3575050D1 publication Critical patent/DE3575050D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices
DE8585400626T 1984-03-30 1985-03-29 Verfahren zur herstellung einer monolitisch-integrierten, optischen schaltung enthaltend einen laser und eine nach diesem verfahren erhaltene schaltung. Expired - Fee Related DE3575050D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8405053A FR2562328B1 (fr) 1984-03-30 1984-03-30 Procede de fabrication d'un dispositif optique integre monolithique comprenant un laser a semi-conducteur et dispositif obtenu par ce procede

Publications (1)

Publication Number Publication Date
DE3575050D1 true DE3575050D1 (de) 1990-02-01

Family

ID=9302666

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585400626T Expired - Fee Related DE3575050D1 (de) 1984-03-30 1985-03-29 Verfahren zur herstellung einer monolitisch-integrierten, optischen schaltung enthaltend einen laser und eine nach diesem verfahren erhaltene schaltung.

Country Status (6)

Country Link
US (1) US4720468A (de)
EP (1) EP0159258B1 (de)
JP (1) JPH0636457B2 (de)
DE (1) DE3575050D1 (de)
FR (1) FR2562328B1 (de)
WO (1) WO1985004491A1 (de)

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FR2584826B1 (fr) * 1985-07-11 1987-10-09 Labo Electronique Physique Element de commutation optique entre deux guides de lumiere et matrice de commutation optique formee de ces elements de commutation
DE3609278A1 (de) * 1986-03-19 1987-09-24 Siemens Ag Integrierte optische halbleiteranordnung
FR2605801B1 (fr) * 1986-10-23 1989-03-03 Menigaux Louis Procede de fabrication d'une structure semi-conductrice susceptible d'effet laser multi-longueurs d'onde, et dispositif obtenu
JPS63142887A (ja) * 1986-12-05 1988-06-15 Sharp Corp 半導体発光素子
JP2587628B2 (ja) * 1987-01-29 1997-03-05 国際電信電話株式会社 半導体集積発光素子
SE461491B (sv) * 1987-12-02 1990-02-19 Asea Ab Monolitisk optokopplare
US4847665A (en) * 1988-03-31 1989-07-11 Northern Telecom Limited Monolithic integration of optoelectronic and electronic devices
US5055894A (en) * 1988-09-29 1991-10-08 The Boeing Company Monolithic interleaved LED/PIN photodetector array
FR2642228A1 (fr) * 1989-01-20 1990-07-27 Menigaux Louis Procede de fabrication d'un dispositif semi-conducteur quasi plat susceptible d'effet laser multi-longueurs d'onde et dispositif correspondant
FR2655775B1 (fr) * 1989-12-13 1992-03-20 Menigaux Louis Procede de realisation d'une structure integree guide photodetecteur.
US5071786A (en) * 1990-03-08 1991-12-10 Xerox Corporation Method of making multiple wavelength p-n junction semiconductor laser with separated waveguides
US5091799A (en) * 1990-10-31 1992-02-25 The United States Of America As Represented By The Secretary Of The Navy Buried heterostructure laser modulator
NL9100103A (nl) * 1991-01-23 1992-08-17 Philips Nv Halfgeleiderdiodelaser met monitordiode.
JPH0661583A (ja) * 1992-08-11 1994-03-04 Sony Corp 半導体レーザ
US6693736B1 (en) 1992-09-10 2004-02-17 Fujitsu Limited Optical circuit system and components of same
WO1994006052A1 (en) * 1992-09-10 1994-03-17 Fujitsu Limited Optical circuit system and its constituents
JP3323324B2 (ja) * 1993-06-18 2002-09-09 株式会社リコー 発光ダイオードおよび発光ダイオードアレイ
JPH07202263A (ja) * 1993-12-28 1995-08-04 Ricoh Co Ltd 端面発光型発光ダイオード、アレイ状光源、側面受光型受光素子、受発光素子、端面発光型発光ダイオードアレイ状光源
US5721750A (en) * 1995-04-13 1998-02-24 Korea Advanced Institute Of Science And Technology Laser diode for optoelectronic integrated circuit and a process for preparing the same
US6931003B2 (en) * 2000-02-09 2005-08-16 Bookline Flolmstead Llc Packet prioritization protocol for a large-scale, high speed computer network
US7043106B2 (en) * 2002-07-22 2006-05-09 Applied Materials, Inc. Optical ready wafers
US7110629B2 (en) * 2002-07-22 2006-09-19 Applied Materials, Inc. Optical ready substrates
US7072534B2 (en) * 2002-07-22 2006-07-04 Applied Materials, Inc. Optical ready substrates
KR20060026027A (ko) * 2003-05-29 2006-03-22 어플라이드 머티어리얼스, 인코포레이티드 광신호의 연속 라우팅
US7103079B2 (en) * 2003-06-27 2006-09-05 Applied Materials, Inc. Pulsed quantum dot laser system with low jitter
US20050016446A1 (en) 2003-07-23 2005-01-27 Abbott John S. CaF2 lenses with reduced birefringence
US20060222024A1 (en) * 2005-03-15 2006-10-05 Gray Allen L Mode-locked semiconductor lasers with quantum-confined active region
US20060227825A1 (en) * 2005-04-07 2006-10-12 Nl-Nanosemiconductor Gmbh Mode-locked quantum dot laser with controllable gain properties by multiple stacking
WO2007027615A1 (en) * 2005-09-01 2007-03-08 Applied Materials, Inc. Ridge technique for fabricating an optical detector and an optical waveguide
WO2007065614A2 (en) * 2005-12-07 2007-06-14 Innolume Gmbh Laser source with broadband spectrum emission
US7561607B2 (en) * 2005-12-07 2009-07-14 Innolume Gmbh Laser source with broadband spectrum emission
US7835408B2 (en) * 2005-12-07 2010-11-16 Innolume Gmbh Optical transmission system
WO2010065731A2 (en) * 2008-12-03 2010-06-10 Innolume Gmbh Semiconductor laser with low relative intensity noise of individual longitudinal modes and optical transmission system incorporating the laser
US10209445B2 (en) * 2012-07-30 2019-02-19 Hewlett Packard Enterprise Development Lp Method of fabricating a compact photonics platform
US10928659B2 (en) 2014-02-24 2021-02-23 Rockley Photonics Limited Optoelectronic device
US10222677B2 (en) 2014-02-24 2019-03-05 Rockley Photonics Limited Optoelectronic device
US11150494B2 (en) 2015-03-05 2021-10-19 Rockley Photonics Limited Waveguide modulator structures
US10921616B2 (en) 2016-11-23 2021-02-16 Rockley Photonics Limited Optoelectronic device
WO2016139484A1 (en) 2015-03-05 2016-09-09 Rockley Photonics Limited Waveguide modulator structures
US10216059B2 (en) 2015-03-05 2019-02-26 Rockley Photonics Limited Waveguide modulator structures
US10678115B2 (en) 2015-03-05 2020-06-09 Rockley Photonics Limited Waveguide modulator structures
US11022824B2 (en) * 2016-11-23 2021-06-01 Rockley Photonics Limited Electro-optically active device
US11101256B2 (en) 2016-11-23 2021-08-24 Rockley Photonics Limited Optical modulators
US11036006B2 (en) 2016-12-02 2021-06-15 Rockley Photonics Limited Waveguide device and method of doping a waveguide device
US11105975B2 (en) 2016-12-02 2021-08-31 Rockley Photonics Limited Waveguide optoelectronic device
GB2576652B (en) 2017-07-05 2021-12-22 Rockley Photonics Ltd Optoelectronic device
IT201700087052A1 (it) * 2017-07-28 2019-01-28 Prima Electro S P A Procedimento di fabbricazione di un diodo laser a semiconduttore, e diodo laser
GB2585391B (en) 2019-08-23 2021-10-27 Rockley Photonics Ltd Method of fabricating an optoelectronic component

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GB1539028A (en) * 1975-12-18 1979-01-24 Tokyo Inst Tech Optical systems
US4114257A (en) * 1976-09-23 1978-09-19 Texas Instruments Incorporated Method of fabrication of a monolithic integrated optical circuit
CA1127282A (en) * 1978-05-22 1982-07-06 Takashi Sugino Semiconductor laser and method of making the same
FR2525033B1 (fr) * 1982-04-08 1986-01-17 Bouadma Noureddine Laser a semi-conducteur a plusieurs longueurs d'onde independantes et son procede de realisation
JPS58216486A (ja) * 1982-06-10 1983-12-16 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レ−ザおよびその製造方法
JPS5990981A (ja) * 1982-11-16 1984-05-25 Nec Corp 光集積回路の製作方法

Also Published As

Publication number Publication date
WO1985004491A1 (fr) 1985-10-10
EP0159258A1 (de) 1985-10-23
US4720468A (en) 1988-01-19
FR2562328A1 (fr) 1985-10-04
JPH0636457B2 (ja) 1994-05-11
FR2562328B1 (fr) 1987-11-27
EP0159258B1 (de) 1989-12-27
JPS61501669A (ja) 1986-08-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee