DE3581304D1 - Doppelheterostruktur-halbleiterlaser fuer sichtbare strahlung. - Google Patents

Doppelheterostruktur-halbleiterlaser fuer sichtbare strahlung.

Info

Publication number
DE3581304D1
DE3581304D1 DE8585302179T DE3581304T DE3581304D1 DE 3581304 D1 DE3581304 D1 DE 3581304D1 DE 8585302179 T DE8585302179 T DE 8585302179T DE 3581304 T DE3581304 T DE 3581304T DE 3581304 D1 DE3581304 D1 DE 3581304D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
visible radiation
double heterostructure
heterostructure semiconductor
double
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585302179T
Other languages
English (en)
Inventor
Seiki Yano
Saburo Yamamoto
Harushisa Takiguchi
Shinji Kaneiwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3581304D1 publication Critical patent/DE3581304D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
DE8585302179T 1984-03-29 1985-03-28 Doppelheterostruktur-halbleiterlaser fuer sichtbare strahlung. Expired - Lifetime DE3581304D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59062287A JPS60206081A (ja) 1984-03-29 1984-03-29 半導体レ−ザ装置

Publications (1)

Publication Number Publication Date
DE3581304D1 true DE3581304D1 (de) 1991-02-21

Family

ID=13195750

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585302179T Expired - Lifetime DE3581304D1 (de) 1984-03-29 1985-03-28 Doppelheterostruktur-halbleiterlaser fuer sichtbare strahlung.

Country Status (4)

Country Link
US (1) US4712219A (de)
EP (1) EP0157602B1 (de)
JP (1) JPS60206081A (de)
DE (1) DE3581304D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63299186A (ja) * 1987-05-29 1988-12-06 Hitachi Ltd 発光素子
US4829343A (en) * 1987-07-17 1989-05-09 American Telephone & Telegraph Company, At&T Bell Laboratories Hot electron transistor
US5146295A (en) * 1988-03-29 1992-09-08 Omron Tateisi Electronic Co. Semiconductor light emitting device having a superlattice buffer layer
US5048036A (en) * 1989-09-18 1991-09-10 Spectra Diode Laboratories, Inc. Heterostructure laser with lattice mismatch
US4984242A (en) * 1989-09-18 1991-01-08 Spectra Diode Laboratories, Inc. GaAs/AlGaAs heterostructure laser containing indium
US5200972A (en) * 1991-06-17 1993-04-06 The United States Of America As Represented By The Secretary Of The Navy ND laser with co-doped ion(s) pumped by visible laser diodes
JP3362356B2 (ja) * 1993-03-23 2003-01-07 富士通株式会社 光半導体装置
JPH07183618A (ja) * 1993-12-22 1995-07-21 Ricoh Co Ltd 半導体レーザ装置、半導体レーザ装置製造方法並びに集積型半導体レーザ装置
US5550065A (en) * 1994-11-25 1996-08-27 Motorola Method of fabricating self-aligned FET structure having a high temperature stable T-shaped Schottky gate contact
US5751753A (en) * 1995-07-24 1998-05-12 Fujitsu Limited Semiconductor laser with lattice mismatch
US6181721B1 (en) * 1996-05-20 2001-01-30 Sdl, Inc. Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam
US5838705A (en) * 1996-11-04 1998-11-17 Motorola, Inc. Light emitting device having a defect inhibition layer
US8373152B2 (en) * 2008-03-27 2013-02-12 Lg Innotek Co., Ltd. Light-emitting element and a production method therefor
JP5852660B2 (ja) * 2010-10-12 2016-02-03 アライアンス フォー サステイナブル エナジー リミテッド ライアビリティ カンパニー 高効率なオプトエレクトロニクスのための大きなバンドギャップをもつｉｉｉ−ｖ族化合物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542829B2 (de) * 1973-02-26 1979-02-14
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device
JPS5640292A (en) * 1979-09-11 1981-04-16 Fujitsu Ltd Semiconductor laser
JPS5727095A (en) * 1980-07-25 1982-02-13 Toshiba Corp Semiconductor light emitting device
FR2508244A1 (fr) * 1981-06-19 1982-12-24 Thomson Csf Laser a semi-conducteur a courte longueur d'onde

Also Published As

Publication number Publication date
US4712219A (en) 1987-12-08
EP0157602A3 (en) 1987-06-03
JPS60206081A (ja) 1985-10-17
EP0157602B1 (de) 1991-01-16
EP0157602A2 (de) 1985-10-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee