DE3581370D1 - Halbleitervorrichtung. - Google Patents

Halbleitervorrichtung.

Info

Publication number
DE3581370D1
DE3581370D1 DE8585307857T DE3581370T DE3581370D1 DE 3581370 D1 DE3581370 D1 DE 3581370D1 DE 8585307857 T DE8585307857 T DE 8585307857T DE 3581370 T DE3581370 T DE 3581370T DE 3581370 D1 DE3581370 D1 DE 3581370D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585307857T
Other languages
English (en)
Inventor
Gourab Mitsubishi Den Majumdar
Satoshi Mitsubishi Denki Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE3581370D1 publication Critical patent/DE3581370D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/0422—Anti-saturation measures
DE8585307857T 1984-10-30 1985-10-30 Halbleitervorrichtung. Expired - Fee Related DE3581370D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59230614A JPS61107813A (ja) 1984-10-30 1984-10-30 半導体装置

Publications (1)

Publication Number Publication Date
DE3581370D1 true DE3581370D1 (de) 1991-02-21

Family

ID=16910521

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585307857T Expired - Fee Related DE3581370D1 (de) 1984-10-30 1985-10-30 Halbleitervorrichtung.

Country Status (4)

Country Link
US (1) US4672245A (de)
EP (1) EP0181148B1 (de)
JP (1) JPS61107813A (de)
DE (1) DE3581370D1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4950924A (en) * 1989-05-11 1990-08-21 Northern Telecom Limited High speed noise immune bipolar logic family
JPH04280475A (ja) * 1991-03-08 1992-10-06 Fuji Electric Co Ltd 半導体スイッチング装置
US5164802A (en) * 1991-03-20 1992-11-17 Harris Corporation Power vdmosfet with schottky on lightly doped drain of lateral driver fet
US5463344A (en) * 1993-04-26 1995-10-31 Harris Corporation Fast turn on switch circuit with parallel MOS controlled thyristor and silicon controlled rectifier
US5936454A (en) * 1993-06-01 1999-08-10 Motorola, Inc. Lateral bipolar transistor operating with independent base and gate biasing
DE69413798T2 (de) * 1994-04-12 1999-04-22 St Microelectronics Srl Elektronische Leistungsvorrichtung mit drei Anschlüssen und isoliertem Gate mit einer Sättigungsausgangskennlinie veränderlicher Neigung in diskontinuierlicher Abhängigkeit vom Ausgangsstrom
JP3386943B2 (ja) * 1995-10-30 2003-03-17 三菱電機株式会社 半導体装置
US6614289B1 (en) * 2000-11-07 2003-09-02 Lovoltech Inc. Starter device for normally off FETs
US6611148B2 (en) * 2001-07-24 2003-08-26 Henry H. Clinton Apparatus for the high voltage testing of insulated conductors and oscillator circuit for use with same
DE10250154B4 (de) * 2002-10-28 2007-05-03 Infineon Technologies Ag Schaltereinheit für ein Schaltnetzteil
DE10255373A1 (de) * 2002-11-27 2004-06-24 Siemens Ag Vorrichtung zum elektronischen Schalten eines Lastelements, Anordnung der Vorrichtung und Verwendung der Vorrichtung bzw. Anordnung
FR2914784B1 (fr) * 2007-04-05 2009-08-14 St Microelectronics Sa Composant dipolaire unidirectionnel a protection en surintensite.
CN102342008B (zh) 2009-01-19 2016-08-03 伟创力国际美国公司 用于功率转换器的控制器
US9246391B2 (en) 2010-01-22 2016-01-26 Power Systems Technologies Ltd. Controller for providing a corrected signal to a sensed peak current through a circuit element of a power converter
US8787043B2 (en) 2010-01-22 2014-07-22 Power Systems Technologies, Ltd. Controller for a power converter and method of operating the same
US8767418B2 (en) 2010-03-17 2014-07-01 Power Systems Technologies Ltd. Control system for a power converter and method of operating the same
US8792257B2 (en) 2011-03-25 2014-07-29 Power Systems Technologies, Ltd. Power converter with reduced power dissipation
US8792256B2 (en) * 2012-01-27 2014-07-29 Power Systems Technologies Ltd. Controller for a switch and method of operating the same
DE112012006181B4 (de) 2012-04-06 2017-08-31 Mitsubishi Electric Corporation Komposithalbleiterschaltvorrichtung
US9190898B2 (en) 2012-07-06 2015-11-17 Power Systems Technologies, Ltd Controller for a power converter and method of operating the same
US9240712B2 (en) 2012-12-13 2016-01-19 Power Systems Technologies Ltd. Controller including a common current-sense device for power switches of a power converter
US9300206B2 (en) 2013-11-15 2016-03-29 Power Systems Technologies Ltd. Method for estimating power of a power converter

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1144766B (de) * 1961-11-14 1963-03-07 Siemens Ag Schwellwertschalter
US3417260A (en) * 1965-05-24 1968-12-17 Motorola Inc Monolithic integrated diode-transistor logic circuit having improved switching characteristics
DE3030485A1 (de) * 1980-08-12 1982-03-25 Siemens AG, 1000 Berlin und 8000 München Schalthilfe-einrichtung fuer einen bipolaren leistungstransistor
DE3044842C2 (de) * 1980-11-28 1986-09-04 Schoppe & Faeser Gmbh, 4950 Minden Verfahren zum Einschalten von im Schaltbetrieb arbeitenden Leistungstransistoren und Schaltungsanordnungen zur Durchführung des Verfahrens
JPS57186833A (en) * 1981-05-13 1982-11-17 Hitachi Ltd Switching element
US4551643A (en) * 1983-10-24 1985-11-05 Rca Corporation Power switching circuitry

Also Published As

Publication number Publication date
EP0181148A1 (de) 1986-05-14
EP0181148B1 (de) 1991-01-16
US4672245A (en) 1987-06-09
JPS61107813A (ja) 1986-05-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee