DE3584142D1 - Integrierte halbleiterschaltungsanordnung mit eingebauten speichern. - Google Patents

Integrierte halbleiterschaltungsanordnung mit eingebauten speichern.

Info

Publication number: DE3584142D1
Authority: DE; Germany
Prior art keywords: built; memory; circuit arrangement; semiconductor circuit; integrated semiconductor
Prior art date: 1984-11-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE8585115003T

Other languages

English (en)

Inventor

Fumio Tuchiya

Kiyoshi Matsubara

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-11-26

Filing date

1985-11-26

Publication date

1991-10-24

1984-11-26 Priority claimed from JP24810684A external-priority patent/JPH0736273B2/ja

1984-11-26 Priority claimed from JP24810884A external-priority patent/JPH0636319B2/ja

1985-11-26 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1991-10-24 Application granted granted Critical

1991-10-24 Publication of DE3584142D1 publication Critical patent/DE3584142D1/de

2005-11-27 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits

DE8585115003T 1984-11-26 1985-11-26 Integrierte halbleiterschaltungsanordnung mit eingebauten speichern. Expired - Lifetime DE3584142D1 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP24810684A JPH0736273B2 (ja)	1984-11-26	1984-11-26	半導体集積回路
JP24810884A JPH0636319B2 (ja)	1984-11-26	1984-11-26	半導体集積回路

Publications (1)

Publication Number	Publication Date
DE3584142D1 true DE3584142D1 (de)	1991-10-24

Family

ID=26538596

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8585115003T Expired - Lifetime DE3584142D1 (de)	1984-11-26	1985-11-26	Integrierte halbleiterschaltungsanordnung mit eingebauten speichern.

Country Status (6)

Country	Link
US (2)	US4783764A (de)
EP (1)	EP0183232B1 (de)
KR (1)	KR950000341B1 (de)
DE (1)	DE3584142D1 (de)
HK (1)	HK69393A (de)
SG (1)	SG43393G (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6545913B2 (en)	1987-06-29	2003-04-08	Kabushiki Kaisha Toshiba	Memory cell of nonvolatile semiconductor memory device
US5448517A (en) *	1987-06-29	1995-09-05	Kabushiki Kaisha Toshiba	Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
US5222046A (en) *	1988-02-17	1993-06-22	Intel Corporation	Processor controlled command port architecture for flash memory
KR900019027A (ko) *	1988-05-23	1990-12-22	미다 가쓰시게	불휘발성 반도체 기억장치
JP2547615B2 (ja) *	1988-06-16	1996-10-23	三菱電機株式会社	読出専用半導体記憶装置および半導体記憶装置
US5511211A (en) *	1988-08-31	1996-04-23	Hitachi, Ltd.	Method for flexibly developing a data processing system comprising rewriting instructions in non-volatile memory elements after function check indicates failure of required functions
US5428574A (en) *	1988-12-05	1995-06-27	Motorola, Inc.	Static RAM with test features
US5065364A (en) *	1989-09-15	1991-11-12	Intel Corporation	Apparatus for providing block erasing in a flash EPROM
FR2652672B1 (fr) *	1989-10-02	1991-12-20	Sgs Thomson Microelectronics	Memoire a temps de lecture ameliore.
EP0446721B1 (de) *	1990-03-16	2000-12-20	Texas Instruments Incorporated	Verteilter Verarbeitungsspeicher
JPH0799636B2 (ja) *	1990-09-28	1995-10-25	三菱電機株式会社	半導体記憶装置
JPH0540730A (ja) *	1991-08-06	1993-02-19	Mitsubishi Electric Corp	マイクロコンピユータ
US7057937B1 (en)	1992-03-17	2006-06-06	Renesas Technology Corp.	Data processing apparatus having a flash memory built-in which is rewritable by use of external device
US5687345A (en) *	1992-03-17	1997-11-11	Hitachi, Ltd.	Microcomputer having CPU and built-in flash memory that is rewritable under control of the CPU analyzing a command supplied from an external device
JP3765585B2 (ja) *	1992-08-10	2006-04-12	株式会社ルネサステクノロジ	データ処理装置
US6414878B2 (en)	1992-03-17	2002-07-02	Hitachi, Ltd.	Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
TW231343B (de) *	1992-03-17	1994-10-01	Hitachi Seisakusyo Kk
JP2761326B2 (ja) *	1992-05-28	1998-06-04	三菱電機株式会社	マルチプロセッサ型ワンチップマイクロコンピュータ
KR950013342B1 (ko) *	1992-10-06	1995-11-02	삼성전자주식회사	반도체 메모리장치의 결함구제회로
US5559981A (en) *	1994-02-14	1996-09-24	Motorola, Inc.	Pseudo static mask option register and method therefor
JP3584494B2 (ja) *	1994-07-25	2004-11-04	ソニー株式会社	半導体不揮発性記憶装置
US5867409A (en) *	1995-03-09	1999-02-02	Kabushiki Kaisha Toshiba	Linear feedback shift register
US5982696A (en) *	1996-06-06	1999-11-09	Cirrus Logic, Inc.	Memories with programmable address decoding and systems and methods using the same
US5952833A (en)	1997-03-07	1999-09-14	Micron Technology, Inc.	Programmable voltage divider and method for testing the impedance of a programmable element
JP3494849B2 (ja) *	1997-05-29	2004-02-09	富士通株式会社	半導体記憶装置のデータ読み出し方法、半導体記憶装置及び半導体記憶装置の制御装置
US6282602B1 (en) *	1998-06-30	2001-08-28	Emc Corporation	Method and apparatus for manipulating logical objects in a data storage system
US6393540B1 (en)	1998-06-30	2002-05-21	Emc Corporation	Moving a logical object from a set of source locations to a set of destination locations using a single command
US6542909B1 (en) *	1998-06-30	2003-04-01	Emc Corporation	System for determining mapping of logical objects in a computer system
US7383294B1 (en)	1998-06-30	2008-06-03	Emc Corporation	System for determining the mapping of logical objects in a data storage system
US6883063B2 (en)	1998-06-30	2005-04-19	Emc Corporation	Method and apparatus for initializing logical objects in a data storage system
US6329985B1 (en)	1998-06-30	2001-12-11	Emc Corporation	Method and apparatus for graphically displaying mapping of a logical object
US6038194A (en) *	1998-12-28	2000-03-14	Philips Electronics North America Corporation	Memory decoder with zero static power
US6359808B1 (en) *	1999-10-19	2002-03-19	Advanced Micro Devices, Inc.	Low voltage read cascode for 2V/3V and different bank combinations without metal options for a simultaneous operation flash memory device
JP2002170399A (ja) *	2000-12-05	2002-06-14	Fujitsu Ltd	半導体装置
US7016245B2 (en) *	2004-02-02	2006-03-21	Texas Instruments Incorporated	Tracking circuit enabling quick/accurate retrieval of data stored in a memory array

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6025836B2 (ja) *	1978-05-24	1985-06-20	株式会社日立製作所	半導体不揮発性メモリ
US4208728A (en) *	1978-12-21	1980-06-17	Bell Telephone Laboratories, Incorporated	Programable logic array
JPH0472271B2 (de) *	1979-06-12	1992-11-17	Motorola Inc
US4289982A (en) *	1979-06-28	1981-09-15	Motorola, Inc.	Apparatus for programming a dynamic EPROM
US4282446A (en) *	1979-10-01	1981-08-04	Texas Instruments Incorporated	High density floating gate EPROM programmable by charge storage
US4494187A (en) *	1982-02-22	1985-01-15	Texas Instruments Incorporated	Microcomputer with high speed program memory
JPH0762958B2 (ja) *	1983-06-03	1995-07-05	株式会社日立製作所	Ｍｏｓ記憶装置
JPS6151695A (ja) *	1984-08-22	1986-03-14	Hitachi Ltd	半導体集積回路装置
US4787764A (en) *	1985-08-17	1988-11-29	Citizen Watch Co., Ltd.	Sheet feeder in printers, having an improved operability in sheet setting
JPS6243744A (ja) *	1985-08-21	1987-02-25	Nec Corp	マイクロコンピユ−タ
US4763303A (en) *	1986-02-24	1988-08-09	Motorola, Inc.	Write-drive data controller

1985
- 1985-11-25 KR KR1019850008798A patent/KR950000341B1/ko not_active IP Right Cessation
- 1985-11-25 US US06/802,198 patent/US4783764A/en not_active Expired - Lifetime
- 1985-11-26 DE DE8585115003T patent/DE3584142D1/de not_active Expired - Lifetime
- 1985-11-26 EP EP85115003A patent/EP0183232B1/de not_active Expired - Lifetime
1988
- 1988-10-11 US US07/255,252 patent/US4908795A/en not_active Expired - Lifetime
1993
- 1993-04-13 SG SG43393A patent/SG43393G/en unknown
- 1993-07-15 HK HK693/93A patent/HK69393A/xx not_active IP Right Cessation

Also Published As

Publication number	Publication date
US4783764A (en)	1988-11-08
HK69393A (en)	1993-07-23
EP0183232B1 (de)	1991-09-18
EP0183232A2 (de)	1986-06-04
KR860004469A (ko)	1986-06-23
SG43393G (en)	1993-06-25
US4908795A (en)	1990-03-13
EP0183232A3 (en)	1989-09-13
KR950000341B1 (ko)	1995-01-13

Legal Events

Date	Code	Title	Description
1992-10-15	8364	No opposition during term of opposition
2001-01-11	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
DE3584142D1 (de)	1991-10-24	Integrierte halbleiterschaltungsanordnung mit eingebauten speichern.
DE3788487D1 (de)	1994-01-27	Integrierte Schaltung mit Speicherselbstprüfung.
DE68920243D1 (de)	1995-02-09	Halbleiter-Speicherschaltung.
DE3762295D1 (de)	1990-05-17	Halbleiterspeichereinrichtung mit redundanzschaltungsteil.
DE3585711D1 (de)	1992-04-30	Halbleiterspeicheranordnung.
DE3583091D1 (de)	1991-07-11	Halbleiterspeicheranordnung.
DE3775603D1 (de)	1992-02-13	Halbleiter-speicheranordnung mit redundanzschaltungsteil.
DE3577944D1 (de)	1990-06-28	Halbleiterspeicheranordnung.
DE3585733D1 (de)	1992-04-30	Halbleiterspeichereinrichtung mit lese-aenderung-schreib-konfiguration.
DE3582376D1 (de)	1991-05-08	Halbleiterspeicheranordnung.
DE3586377T2 (de)	1993-01-07	Halbleiterspeicheranordnung.
DE3576236D1 (de)	1990-04-05	Halbleiterspeicheranordnung.
DE3577367D1 (de)	1990-05-31	Halbleiterspeicheranordnung.
DE3485592D1 (de)	1992-04-23	Integrierte halbleiterschaltungsanordnung.
DE3575225D1 (de)	1990-02-08	Halbleiterspeicheranordnung.
DE3580993D1 (de)	1991-02-07	Halbleiterspeicheranordnung.
DE3586556T2 (de)	1993-01-14	Halbleiterspeicheranordnung.
DE3576754D1 (de)	1990-04-26	Halbleiterspeicheranordnung.
DE68915136T2 (de)	1994-09-15	Integrierte Halbleiterspeicherschaltung.
DE3486077D1 (de)	1993-03-25	Integrierte halbleiterschaltungsanordnung.
DE3586675D1 (de)	1992-10-29	Halbleiterspeicheranordnung.
DE3582960D1 (de)	1991-07-04	Halbleiterspeicheranordnung.
DE3481958D1 (de)	1990-05-17	Integrierte halbleiterschaltungsanordnung.
DE3580454D1 (de)	1990-12-13	Halbleiterspeicheranordnung.
DE3578254D1 (de)	1990-07-19	Halbleiterspeicheranordnung.