DE3586668D1 - Laserverfahren zur photomaskenreparatur. - Google Patents

Laserverfahren zur photomaskenreparatur.

Info

Publication number
DE3586668D1
DE3586668D1 DE8585303091T DE3586668T DE3586668D1 DE 3586668 D1 DE3586668 D1 DE 3586668D1 DE 8585303091 T DE8585303091 T DE 8585303091T DE 3586668 T DE3586668 T DE 3586668T DE 3586668 D1 DE3586668 D1 DE 3586668D1
Authority
DE
Germany
Prior art keywords
photomask
laser
defect
laser process
repair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585303091T
Other languages
English (en)
Other versions
DE3586668T2 (de
Inventor
Peter L Young
Modest M Oprysko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gould Electronics Inc
Original Assignee
Gould Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gould Inc filed Critical Gould Inc
Application granted granted Critical
Publication of DE3586668D1 publication Critical patent/DE3586668D1/de
Publication of DE3586668T2 publication Critical patent/DE3586668T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials
    • G03F1/56Organic absorbers, e.g. of photo-resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72Repair or correction of mask defects
DE8585303091T 1984-06-20 1985-05-01 Laserverfahren zur photomaskenreparatur. Expired - Fee Related DE3586668T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US62236884A 1984-06-20 1984-06-20

Publications (2)

Publication Number Publication Date
DE3586668D1 true DE3586668D1 (de) 1992-10-29
DE3586668T2 DE3586668T2 (de) 1993-04-01

Family

ID=24493929

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585303091T Expired - Fee Related DE3586668T2 (de) 1984-06-20 1985-05-01 Laserverfahren zur photomaskenreparatur.

Country Status (5)

Country Link
US (1) US4727234A (de)
EP (1) EP0165685B1 (de)
JP (1) JPS6114640A (de)
AT (1) ATE80955T1 (de)
DE (1) DE3586668T2 (de)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0193673A3 (de) * 1985-03-01 1988-12-28 Gould Inc. Vorrichtung für die Photomaskenreparatur
JPH06100683B2 (ja) * 1986-02-18 1994-12-12 凸版印刷株式会社 カラ−フイルタ−の修正方法
US5708252A (en) * 1986-09-26 1998-01-13 Semiconductor Energy Laboratory Co., Ltd. Excimer laser scanning system
US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US4835576A (en) * 1986-10-17 1989-05-30 Toyo Ink Mfg. Co., Ltd. Opaquing method and apparatus thereof
JPS63155145A (ja) * 1986-12-19 1988-06-28 Seiko Instr & Electronics Ltd マスクの白点欠陥修正方法
US6261856B1 (en) 1987-09-16 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
CA1312506C (en) * 1987-09-30 1993-01-12 Atsuhisa Fujisawa Method of remedying coating
US4960613A (en) * 1988-10-04 1990-10-02 General Electric Company Laser interconnect process
US5084311A (en) * 1988-12-28 1992-01-28 General Electric Company Electromagnetic transducers and method of making them
US5167983A (en) * 1988-12-28 1992-12-01 General Electric Company Method of forming a conductor pattern on the inside of a hollow tube by reacting a gas or fluid therein with actinic radiation
US4871415A (en) * 1988-12-30 1989-10-03 Zenith Electronics Corporation Apparatus and method for curing a defect in a grille formed on a panel of a color cathode ray tube
KR100190423B1 (ko) * 1989-06-06 1999-06-01 기타지마 요시도시 에멀젼마스크 등의결함 수정방법 및 장치
US5362591A (en) * 1989-10-09 1994-11-08 Hitachi Ltd. Et Al. Mask having a phase shifter and method of manufacturing same
US5164565A (en) * 1991-04-18 1992-11-17 Photon Dynamics, Inc. Laser-based system for material deposition and removal
US5175504A (en) * 1991-06-17 1992-12-29 Photon Dynamics, Inc. Method and apparatus for automatically inspecting and repairing a simple matrix circuit panel
US5235272A (en) * 1991-06-17 1993-08-10 Photon Dynamics, Inc. Method and apparatus for automatically inspecting and repairing an active matrix LCD panel
US5432461A (en) * 1991-06-28 1995-07-11 Photon Dynamics, Inc. Method of testing active matrix liquid crystal display substrates
US5465052A (en) * 1991-09-10 1995-11-07 Photon Dynamics, Inc. Method of testing liquid crystal display substrates
US5444385A (en) * 1991-09-10 1995-08-22 Photon Dynamics, Inc. Testing apparatus for liquid crystal display substrates
US5459409A (en) * 1991-09-10 1995-10-17 Photon Dynamics, Inc. Testing device for liquid crystal display base plate
US5504438A (en) * 1991-09-10 1996-04-02 Photon Dynamics, Inc. Testing method for imaging defects in a liquid crystal display substrate
US5543729A (en) * 1991-09-10 1996-08-06 Photon Dynamics, Inc. Testing apparatus and connector for liquid crystal display substrates
JPH0799791B2 (ja) * 1992-04-15 1995-10-25 インターナショナル・ビジネス・マシーンズ・コーポレイション 透明基板上の回路ライン接続方法
US5235154A (en) * 1992-04-28 1993-08-10 International Business Machines Corporation Laser removal of metal interconnects
JP2718893B2 (ja) * 1993-06-04 1998-02-25 インターナショナル・ビジネス・マシーンズ・コーポレイション 移相マスクの移相欠陥を修復する方法
US5529951A (en) * 1993-11-02 1996-06-25 Sony Corporation Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation
US6159641A (en) * 1993-12-16 2000-12-12 International Business Machines Corporation Method for the repair of defects in lithographic masks
JP2739115B2 (ja) * 1995-01-09 1998-04-08 株式会社フクハラ メカニカルシールの漏洩警報装置
EP0757598A4 (de) * 1995-01-23 2001-03-14 Sandia Corp Mit gepulstem ionenstrahl unterstützte beschichtung
IL112826A (en) * 1995-02-28 1998-09-24 Chip Express Israel Ltd Method for settling a deposited plasma polymer layer
US6255718B1 (en) 1995-02-28 2001-07-03 Chip Express Corporation Laser ablateable material
JP2785803B2 (ja) * 1996-05-01 1998-08-13 日本電気株式会社 フォトマスクの白点欠陥修正方法および装置
US5998759A (en) * 1996-12-24 1999-12-07 General Scanning, Inc. Laser processing
US6771417B1 (en) * 1997-08-01 2004-08-03 Carl Zeiss Jena Gmbh Applications of adaptive optics in microscopy
US6074571A (en) * 1997-09-30 2000-06-13 International Business Machines Corporation Cut and blast defect to avoid chrome roll over annealing
JP3193678B2 (ja) * 1997-10-20 2001-07-30 株式会社アドバンテスト 半導体ウエハリペア装置及び方法
US5981110A (en) * 1998-02-17 1999-11-09 International Business Machines Corporation Method for repairing photomasks
JP3305670B2 (ja) * 1998-11-20 2002-07-24 科学技術振興事業団 フォトマスクの修正方法
US6300590B1 (en) * 1998-12-16 2001-10-09 General Scanning, Inc. Laser processing
US6277526B1 (en) * 1998-12-28 2001-08-21 Micron Technology, Inc. Method for repairing MoSi attenuated phase shift masks
US6747244B1 (en) * 1999-11-30 2004-06-08 Canon Kabushiki Kaisha Laser working apparatus, laser working method, method for producing ink jet recording head utilizing such laser working apparatus or method, and ink jet recording head formed by such producing method
US6341009B1 (en) * 2000-02-24 2002-01-22 Quantronix Corporation Laser delivery system and method for photolithographic mask repair
US6929886B2 (en) * 2001-01-02 2005-08-16 U-C-Laser Ltd. Method and apparatus for the manufacturing of reticles
US6639177B2 (en) 2001-03-29 2003-10-28 Gsi Lumonics Corporation Method and system for processing one or more microstructures of a multi-material device
US20070173075A1 (en) * 2001-03-29 2007-07-26 Joohan Lee Laser-based method and system for processing a multi-material device having conductive link structures
US6627358B1 (en) 2001-04-20 2003-09-30 Taiwan Semiconductor Manufacturing Company Mask repair in resist image
US20030021016A1 (en) * 2001-07-27 2003-01-30 Grier David G. Parallel scanned laser confocal microscope
JP2003302745A (ja) * 2002-04-12 2003-10-24 Dainippon Printing Co Ltd 異物の無害化方法
DE10230755A1 (de) * 2002-07-09 2004-01-22 Carl Zeiss Jena Gmbh Anordnung zur Herstellung von Photomasken
WO2004038504A2 (en) * 2002-10-21 2004-05-06 Nanoink, Inc. Nanometer-scale engineered structures, methods and apparatus for fabrication thereof, and applications to mask repair, enhancement, and fabrication
KR101115291B1 (ko) 2003-04-25 2012-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액적 토출 장치, 패턴의 형성 방법, 및 반도체 장치의 제조 방법
US20050196710A1 (en) * 2004-03-04 2005-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television apparatus
US8158517B2 (en) * 2004-06-28 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing wiring substrate, thin film transistor, display device and television device
EP1870388B1 (de) * 2005-04-15 2010-09-08 Asahi Glass Company Ltd. Verfahren zur verringerung des durchmessers einer blase in einer glasplatte
US8290239B2 (en) * 2005-10-21 2012-10-16 Orbotech Ltd. Automatic repair of electric circuits
US7676061B2 (en) * 2006-05-02 2010-03-09 Telesis Technologies, Inc. Laser safety system
US20070106416A1 (en) 2006-06-05 2007-05-10 Griffiths Joseph J Method and system for adaptively controlling a laser-based material processing process and method and system for qualifying same
DE102006043874B4 (de) * 2006-09-15 2020-07-09 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Reparatur von Photolithographiemasken
CA2742985A1 (en) * 2008-11-06 2010-05-14 Uico, Inc. Capacitive touch screen and strategic geometry isolation patterning method for making touch screens
JP2011114844A (ja) * 2009-11-30 2011-06-09 Seiko Instruments Inc 圧電振動片の製造方法及び圧電振動片、圧電振動子、発振器、電子機器並びに電波時計
JP5860228B2 (ja) * 2011-06-13 2016-02-16 株式会社ディスコ レーザー加工装置
JP5744640B2 (ja) * 2011-06-21 2015-07-08 三菱電機株式会社 液晶パネルの輝点欠陥黒化方法
WO2013010108A1 (en) 2011-07-13 2013-01-17 Nuvotronics, Llc Methods of fabricating electronic and mechanical structures
US9721856B2 (en) 2015-06-25 2017-08-01 International Business Machines Corporation Implementing resistance defect performance mitigation using test signature directed self heating and increased voltage
KR102504328B1 (ko) * 2018-03-30 2023-03-02 삼성디스플레이 주식회사 레이저 절단장치
KR20220038214A (ko) * 2020-09-18 2022-03-28 삼성디스플레이 주식회사 마스크 수리 장치 및 그것을 이용한 마스크 수리 방법
CN113671790B (zh) * 2021-08-13 2022-06-14 深圳市龙图光电有限公司 掩模版缺陷无痕去除方法、装置、设备及其存储介质

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3364087A (en) * 1964-04-27 1968-01-16 Varian Associates Method of using laser to coat or etch substrate
JPS529508B2 (de) * 1972-10-02 1977-03-16
US4042006A (en) * 1973-01-05 1977-08-16 Siemens Aktiengesellschaft Pyrolytic process for producing a band-shaped metal layer on a substrate
JPS5341075B2 (de) * 1974-12-27 1978-10-31
JPS51122379A (en) * 1975-04-18 1976-10-26 Fujitsu Ltd Treatment for defect of photo-mask
US4190759A (en) * 1975-08-27 1980-02-26 Hitachi, Ltd. Processing of photomask
JPS5270991A (en) * 1975-12-10 1977-06-13 Mitsubishi Electric Corp Gas phase reactor by use of laser
JPS55150226A (en) * 1979-05-11 1980-11-22 Hitachi Ltd Method of correcting pattern
JPS56100414A (en) * 1980-01-14 1981-08-12 Mitsubishi Electric Corp Correcting device for pattern of photomask
US4324854A (en) * 1980-03-03 1982-04-13 California Institute Of Technology Deposition of metal films and clusters by reactions of compounds with low energy electrons on surfaces
JPS56162748A (en) * 1980-05-21 1981-12-14 Hitachi Ltd Defect correcting method for photomask
US4340654A (en) * 1980-06-19 1982-07-20 Campi James G Defect-free photomask
JPS5732630A (en) * 1980-08-04 1982-02-22 Mitsubishi Electric Corp Repair of defect on photomask
JPS5793346A (en) * 1980-12-03 1982-06-10 Fujitsu Ltd Production of photomask plate
JPS57105741A (en) * 1980-12-24 1982-07-01 Nec Corp Image formation
US4444801A (en) * 1981-01-14 1984-04-24 Hitachi, Ltd. Method and apparatus for correcting transparent defects on a photomask
JPS57118246A (en) * 1981-01-14 1982-07-23 Hitachi Ltd Method and device for correcting white spot defect of photomask
JPS586127A (ja) * 1981-07-03 1983-01-13 Hitachi Ltd フオトマスク欠陥修正方法とその装置
JPS60196942A (ja) * 1984-03-21 1985-10-05 Hitachi Ltd フオトマスク欠陥修正方法
US4543270A (en) * 1984-06-20 1985-09-24 Gould Inc. Method for depositing a micron-size metallic film on a transparent substrate utilizing a visible laser

Also Published As

Publication number Publication date
EP0165685A3 (en) 1988-01-27
ATE80955T1 (de) 1992-10-15
EP0165685B1 (de) 1992-09-23
EP0165685A2 (de) 1985-12-27
DE3586668T2 (de) 1993-04-01
US4727234A (en) 1988-02-23
JPS6114640A (ja) 1986-01-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: GOULD ELECTRONICS INC., EASTLAKE, OHIO, US

8328 Change in the person/name/address of the agent

Free format text: DERZEIT KEIN VERTRETER BESTELLT

8339 Ceased/non-payment of the annual fee