DE3587485T2 - Flüssigkristall-anzeige-element und dessen herstellung. - Google Patents

Flüssigkristall-anzeige-element und dessen herstellung.

Info

Publication number
DE3587485T2
DE3587485T2 DE85901601T DE3587485T DE3587485T2 DE 3587485 T2 DE3587485 T2 DE 3587485T2 DE 85901601 T DE85901601 T DE 85901601T DE 3587485 T DE3587485 T DE 3587485T DE 3587485 T2 DE3587485 T2 DE 3587485T2
Authority
DE
Germany
Prior art keywords
production
liquid crystal
crystal display
display element
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE85901601T
Other languages
English (en)
Other versions
DE3587485D1 (de
Inventor
Shigeo Aoki
Yasuhiro Ugai
Katsumi Miyake
Kotaro Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Kobe KK
Original Assignee
Hosiden Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hosiden Corp filed Critical Hosiden Corp
Application granted granted Critical
Publication of DE3587485D1 publication Critical patent/DE3587485D1/de
Publication of DE3587485T2 publication Critical patent/DE3587485T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
DE85901601T 1984-04-09 1985-04-08 Flüssigkristall-anzeige-element und dessen herstellung. Expired - Fee Related DE3587485T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59070440A JPS60213062A (ja) 1984-04-09 1984-04-09 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
DE3587485D1 DE3587485D1 (de) 1993-09-02
DE3587485T2 true DE3587485T2 (de) 1993-12-16

Family

ID=13431549

Family Applications (1)

Application Number Title Priority Date Filing Date
DE85901601T Expired - Fee Related DE3587485T2 (de) 1984-04-09 1985-04-08 Flüssigkristall-anzeige-element und dessen herstellung.

Country Status (5)

Country Link
US (1) US4948231A (de)
EP (1) EP0179914B1 (de)
JP (1) JPS60213062A (de)
DE (1) DE3587485T2 (de)
WO (1) WO1985004731A1 (de)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4770498A (en) * 1982-07-12 1988-09-13 Hosiden Electronics Co., Ltd. Dot-matrix liquid crystal display
JPH0697317B2 (ja) * 1984-04-11 1994-11-30 ホシデン株式会社 液晶表示器
JPS60172131U (ja) * 1984-04-20 1985-11-14 ホシデン株式会社 カラ−液晶表示器
JPS62105475A (ja) * 1985-11-01 1987-05-15 Nec Corp 薄膜トランジスタ及びその製造方法
JPS62125329A (ja) * 1985-11-27 1987-06-06 Hosiden Electronics Co Ltd 透過形表示装置
JP2627071B2 (ja) * 1988-01-26 1997-07-02 キヤノン株式会社 光変調素子
US5187551A (en) * 1988-04-30 1993-02-16 Sharp Kabushiki Kaisha Thin film semiconductor device and liquid crystal display apparatus thereof for preventing irradiated light from reaching the semiconductor layers
US5051800A (en) * 1988-04-30 1991-09-24 Hajime Shoji Thin film semiconductor device and liquid crystal display apparatus using thereof
JP2653099B2 (ja) * 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル，投写型表示装置及びビューファインダー
GB2220792B (en) * 1988-07-13 1991-12-18 Seikosha Kk Silicon thin film transistor and method for producing the same
KR920008675Y1 (ko) * 1989-12-30 1992-12-12 삼성전자 주식회사 평판 디스플레이용 박막 트랜지스터
US5047356A (en) * 1990-02-16 1991-09-10 Hughes Aircraft Company High speed silicon-on-insulator device and process of fabricating same
US5140390A (en) * 1990-02-16 1992-08-18 Hughes Aircraft Company High speed silicon-on-insulator device
US5162933A (en) * 1990-05-16 1992-11-10 Nippon Telegraph And Telephone Corporation Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium
GB2245741A (en) * 1990-06-27 1992-01-08 Philips Electronic Associated Active matrix liquid crystal devices
JP3226223B2 (ja) * 1990-07-12 2001-11-05 株式会社東芝 薄膜トランジスタアレイ装置および液晶表示装置
US5666175A (en) * 1990-12-31 1997-09-09 Kopin Corporation Optical systems for displays
US5475514A (en) * 1990-12-31 1995-12-12 Kopin Corporation Transferred single crystal arrayed devices including a light shield for projection displays
US5256562A (en) * 1990-12-31 1993-10-26 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
JP2873632B2 (ja) 1991-03-15 1999-03-24 株式会社半導体エネルギー研究所 半導体装置
CA2061796C (en) * 1991-03-28 2002-12-24 Kalluri R. Sarma High mobility integrated drivers for active matrix displays
JP3255942B2 (ja) * 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
FR2682493B1 (fr) * 1991-10-11 1994-02-04 Thomson Lcd Dispositif d'amelioration du contraste d'un ecran a cristal liquide et son procede de fabrication.
US5459595A (en) * 1992-02-07 1995-10-17 Sharp Kabushiki Kaisha Active matrix liquid crystal display
EP0589478B1 (de) * 1992-09-25 1999-11-17 Sony Corporation Flüssigkristall-Anzeigevorrichtung
US5707746A (en) * 1992-09-25 1998-01-13 Sharp Kabushiki Kaisha Thin film transistor device with advanced characteristics by improved matching between a glass substrate and a silicon nitride layer
US5982002A (en) * 1993-01-27 1999-11-09 Seiko Instruments Inc. Light valve having a semiconductor film and a fabrication process thereof
US5446567A (en) * 1993-03-23 1995-08-29 Honeywell Inc. Liquid crystal display with first and second aperatures where one aperature has protuberances
JP3272532B2 (ja) * 1993-12-27 2002-04-08 富士通株式会社 半導体装置の製造方法
US5691782A (en) * 1994-07-08 1997-11-25 Sanyo Electric Co., Ltd. Liquid-crystal display with inter-line short-circuit preventive function and process for producing same
JP2827920B2 (ja) * 1994-10-13 1998-11-25 松下電器産業株式会社 カラー液晶表示パネル
FR2732781B1 (fr) * 1995-04-07 1997-06-20 Thomson Lcd Procede de fabrication de matrice active tft pour ecran de systeme de projection
JPH0926603A (ja) * 1995-05-08 1997-01-28 Semiconductor Energy Lab Co Ltd 表示装置
US5771110A (en) 1995-07-03 1998-06-23 Sanyo Electric Co., Ltd. Thin film transistor device, display device and method of fabricating the same
US6790714B2 (en) * 1995-07-03 2004-09-14 Sanyo Electric Co., Ltd. Semiconductor device, display device and method of fabricating the same
KR0172881B1 (ko) * 1995-07-12 1999-03-20 구자홍 액정표시장치의 구조 및 구동방법
JP3143591B2 (ja) * 1995-09-14 2001-03-07 キヤノン株式会社 表示装置
KR100186548B1 (ko) * 1996-01-15 1999-05-01 구자홍 액정표시장치의 구조
JP3433779B2 (ja) * 1996-06-19 2003-08-04 シャープ株式会社 アクティブマトリクス基板およびその製造方法
JP3708637B2 (ja) * 1996-07-15 2005-10-19 株式会社半導体エネルギー研究所 液晶表示装置
JP2870500B2 (ja) * 1996-08-26 1999-03-17 日本電気株式会社 反射型液晶表示装置
JP3634089B2 (ja) * 1996-09-04 2005-03-30 株式会社半導体エネルギー研究所 表示装置
JP3716580B2 (ja) 1997-02-27 2005-11-16 セイコーエプソン株式会社 液晶装置及びその製造方法、並びに投写型表示装置
KR100252436B1 (ko) * 1997-04-23 2000-05-01 구본준 액정표시장치및그제조방법
JP3838393B2 (ja) * 1997-09-02 2006-10-25 株式会社半導体エネルギー研究所 イメージセンサを内蔵した表示装置
JP4271268B2 (ja) 1997-09-20 2009-06-03 株式会社半導体エネルギー研究所 イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置
GB9726511D0 (en) 1997-12-13 1998-02-11 Philips Electronics Nv Thin film transistors and electronic devices comprising such
JP4312851B2 (ja) 1998-04-27 2009-08-12 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3141860B2 (ja) * 1998-10-28 2001-03-07 ソニー株式会社 液晶表示装置の製造方法
KR100590744B1 (ko) * 1998-10-30 2006-10-13 삼성전자주식회사 컬러 필터 기판 및 그 제조 방법, 상기 컬러 필터 기판을 포함하는 액정 표시 장치
JP3889533B2 (ja) * 1999-09-22 2007-03-07 シャープ株式会社 液晶表示装置及びその製造方法
JP3524029B2 (ja) * 2000-01-04 2004-04-26 インターナショナル・ビジネス・マシーンズ・コーポレーション トップゲート型ｔｆｔ構造を形成する方法
JP3701832B2 (ja) * 2000-02-04 2005-10-05 インターナショナル・ビジネス・マシーンズ・コーポレーション 薄膜トランジスタ、液晶表示パネル、および薄膜トランジスタの製造方法
KR100703467B1 (ko) * 2005-01-07 2007-04-03 삼성에스디아이 주식회사 박막트랜지스터
JP2014149429A (ja) 2013-02-01 2014-08-21 Japan Display Inc 液晶表示装置および液晶表示装置の製造方法
TWI518756B (zh) 2013-08-16 2016-01-21 財團法人工業技術研究院 圖案化的導電薄膜及其製造方法與應用
KR20200110573A (ko) * 2019-03-15 2020-09-24 삼성디스플레이 주식회사 표시 장치

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3405331A (en) * 1966-06-29 1968-10-08 Navy Usa Insulated gate field effect transistor using lead salt
US3660732A (en) * 1971-02-08 1972-05-02 Signetics Corp Semiconductor structure with dielectric and air isolation and method
US4006968A (en) * 1975-05-02 1977-02-08 Hughes Aircraft Company Liquid crystal dot color display
US4169746A (en) * 1977-04-28 1979-10-02 Rca Corp. Method for making silicon on sapphire transistor utilizing predeposition of leads
JPS5534416A (en) * 1978-09-01 1980-03-11 Hitachi Ltd Method of manufacturing semiconductor device
JPS5627114A (en) * 1979-08-10 1981-03-16 Canon Inc Liquid crystal display cell
JPS5625714A (en) * 1979-08-09 1981-03-12 Canon Inc Color liquid crystal display cell
JPS5630169A (en) * 1979-08-21 1981-03-26 Canon Kk Color display cell
JPS5665176A (en) * 1979-10-31 1981-06-02 Canon Kk Display device
JPS56107287A (en) * 1980-01-31 1981-08-26 Tokyo Shibaura Electric Co Image display unit
JPS5750384A (en) * 1980-09-10 1982-03-24 Nec Corp Semiconductor storage circuit device
JPS57100721A (en) * 1980-12-15 1982-06-23 Toshiba Corp Manufacture of semiconductor device
JPS58115862A (ja) * 1981-12-28 1983-07-09 Seiko Epson Corp 薄膜トランジスタの製造方法
JPS58159520A (ja) * 1982-03-18 1983-09-21 Seiko Epson Corp 液晶表示パネル
JPS58159516A (ja) * 1982-03-18 1983-09-21 Seiko Epson Corp 液晶表示パネル
JPS58168278A (ja) * 1982-03-30 1983-10-04 Toshiba Corp 薄膜トランジスタの製造方法
FR2527385B1 (fr) * 1982-04-13 1987-05-22 Suwa Seikosha Kk Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor
JPS58222546A (ja) * 1982-04-13 1983-12-24 Citizen Watch Co Ltd 半導体装置
JPS58206163A (ja) * 1982-05-27 1983-12-01 Toshiba Corp 薄膜半導体装置の製造方法
JPS5910988A (ja) * 1982-07-12 1984-01-20 ホシデン株式会社 カラ−液晶表示器
JPS5961818A (ja) * 1982-10-01 1984-04-09 Seiko Epson Corp 液晶表示装置
JPS6053082A (ja) * 1983-09-02 1985-03-26 Seiko Epson Corp 薄膜トランジスタ

Also Published As

Publication number Publication date
DE3587485D1 (de) 1993-09-02
WO1985004731A1 (en) 1985-10-24
EP0179914B1 (de) 1993-07-28
EP0179914A1 (de) 1986-05-07
JPS60213062A (ja) 1985-10-25
EP0179914A4 (de) 1988-08-29
US4948231A (en) 1990-08-14

Similar Documents

Publication Publication Date Title
DE3587485D1 (de) Fluessigkristall-anzeige-element und dessen herstellung.
DE3587536T2 (de) Flüssigkristall-anzeigeelement und verfahren zu dessen herstellung.
DE3587570T2 (de) Farbflüssigkristallanzeigeelement.
DE3587443D1 (de) Fluessigkristall-anzeigebaustein.
DE3868990D1 (de) Fluessigkristall-anzeige.
DE3689720D1 (de) Flüssigkristallanzeigeanordnung.
DE3581953D1 (de) Smektische fluessigkristallverbindung und fluessigkristallzusammensetzungen.
DE68923929D1 (de) Flüssigkristall-Anzeige.
DE3854491D1 (de) Flüssigkristallanzeige.
DE3577211D1 (de) Fluessigkristallverbindung.
DE3580705D1 (de) Fluessigkristallesterverbindungen und ihre mischungen.
GB2050637B (en) Liquid crystal display element and production thereof
DE3852617T2 (de) Farb-Flüssigkristall-Anzeigevorrichtung und ihr Herstellungsverfahren.
DE3777844D1 (de) Fluessigkristallanzeigeelement.
DE3684967D1 (de) Fluessigkristallzusammensetzung.
DE3582551D1 (de) Nematische fluessigkristallzusammensetzung.
DE3767085D1 (de) Fluessigkristallanzeigeelement.
DE3677623D1 (de) Fluessigkristallanzeigen.
DE3581192D1 (de) Fluessigkristall-anzeigeanordnung.
DE3584586D1 (de) Fluessigkristallanzeigeeinheit.
DE3669079D1 (de) Ferroelektrisches fluessigkristallelement und verfahren zu dessen herstellung.
DE3864311D1 (de) Nematische vierring-fluessigkristallverbindung.
DE68915257D1 (de) Flüssigkristallanzeige.
DE3684502D1 (de) Fluessigkristallanzeigeelement und sein herstellungsverfahren.
DE3889036T2 (de) Flüssigkristall-Anzeigeelement.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: HOSIDEN AND PHILIPS DISPLAY CORP., KOBE, HYOGO, JP

8339 Ceased/non-payment of the annual fee