DE3661945D1 - Process for producing on an insulator substrate an oriented single silicon crystal film with localized faults - Google Patents

Process for producing on an insulator substrate an oriented single silicon crystal film with localized faults

Info

Publication number
DE3661945D1
DE3661945D1 DE8686400794T DE3661945T DE3661945D1 DE 3661945 D1 DE3661945 D1 DE 3661945D1 DE 8686400794 T DE8686400794 T DE 8686400794T DE 3661945 T DE3661945 T DE 3661945T DE 3661945 D1 DE3661945 D1 DE 3661945D1
Authority
DE
Germany
Prior art keywords
producing
crystal film
silicon crystal
insulator substrate
single silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8686400794T
Other languages
English (en)
Inventor
Michel Haond
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE3661945D1 publication Critical patent/DE3661945D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/913—Graphoepitaxy or surface modification to enhance epitaxy
DE8686400794T 1985-04-19 1986-04-14 Process for producing on an insulator substrate an oriented single silicon crystal film with localized faults Expired DE3661945D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8506001A FR2580673B1 (fr) 1985-04-19 1985-04-19 Procede de fabrication sur un support isolant d'un film de silicium monocristallin oriente et a defauts localises

Publications (1)

Publication Number Publication Date
DE3661945D1 true DE3661945D1 (en) 1989-03-02

Family

ID=9318453

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686400794T Expired DE3661945D1 (en) 1985-04-19 1986-04-14 Process for producing on an insulator substrate an oriented single silicon crystal film with localized faults

Country Status (5)

Country Link
US (1) US4773964A (de)
EP (1) EP0199638B1 (de)
JP (1) JPS61244020A (de)
DE (1) DE3661945D1 (de)
FR (1) FR2580673B1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6265317A (ja) * 1985-09-17 1987-03-24 Mitsubishi Electric Corp 半導体単結晶膜形成のためのウエハ構造
JPH0639703B2 (ja) * 1986-04-15 1994-05-25 キヤノン株式会社 堆積膜形成法
EP0286855A1 (de) * 1987-04-15 1988-10-19 BBC Brown Boveri AG Verfahren zum Aetzen von Vertiefungen in ein Siliziumsubstrat
FR2623214A1 (fr) * 1987-10-22 1989-05-19 Dutartre Didier Procede de recristallisation de couches minces
US5066610A (en) * 1987-11-20 1991-11-19 Massachusetts Institute Of Technology Capping technique for zone-melting recrystallization of insulated semiconductor films
FR2628444A1 (fr) * 1988-03-11 1989-09-15 Dutartre Didier Procede de fabrication d'une couche de silicium sur isolant
JPH03215391A (ja) * 1989-06-26 1991-09-20 Canon Inc 結晶の成長方法
US5106671A (en) * 1990-12-10 1992-04-21 Ford Motor Company Transparent anti-reflective coating
US5171414A (en) * 1990-12-10 1992-12-15 Ford Motor Company Method of making transparent anti-reflective coating
US5245468A (en) * 1990-12-14 1993-09-14 Ford Motor Company Anti-reflective transparent coating
US5312684A (en) * 1991-05-02 1994-05-17 Dow Corning Corporation Threshold switching device
US5234748A (en) * 1991-06-19 1993-08-10 Ford Motor Company Anti-reflective transparent coating with gradient zone
JP4601731B2 (ja) * 1997-08-26 2010-12-22 株式会社半導体エネルギー研究所 半導体装置、半導体装置を有する電子機器及び半導体装置の作製方法
US20020117718A1 (en) * 2001-02-28 2002-08-29 Apostolos Voutsas Method of forming predominantly <100> polycrystalline silicon thin film transistors
CN100367519C (zh) * 2003-08-12 2008-02-06 北京师范大学 基于区熔硅单晶的双极光晶体管及其探测方法
WO2016140850A1 (en) * 2015-03-03 2016-09-09 Sunedison Semiconductor Limited Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108313A (ja) * 1982-12-13 1984-06-22 Mitsubishi Electric Corp 半導体単結晶層の製造方法
JPH0228560B2 (ja) * 1983-04-28 1990-06-25 Kogyo Gijutsuin Tanketsushoshirikonmakukeiseiho
FR2580672B1 (fr) * 1985-04-19 1987-05-15 France Etat Procede de fabrication sur un support isolant d'un film de silicium monocristallin oriente et a defauts localises

Also Published As

Publication number Publication date
US4773964A (en) 1988-09-27
EP0199638A1 (de) 1986-10-29
JPS61244020A (ja) 1986-10-30
FR2580673A1 (fr) 1986-10-24
EP0199638B1 (de) 1989-01-25
FR2580673B1 (fr) 1987-09-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee