DE3669784D1 - Oxynitride verwendbar als detektoren zum selektiven feststellen von reduzierenden gasen in der atmosphaere und vorrichtung welche diese enthaelt. - Google Patents

Oxynitride verwendbar als detektoren zum selektiven feststellen von reduzierenden gasen in der atmosphaere und vorrichtung welche diese enthaelt.

Info

Publication number
DE3669784D1
DE3669784D1 DE8686400694T DE3669784T DE3669784D1 DE 3669784 D1 DE3669784 D1 DE 3669784D1 DE 8686400694 T DE8686400694 T DE 8686400694T DE 3669784 T DE3669784 T DE 3669784T DE 3669784 D1 DE3669784 D1 DE 3669784D1
Authority
DE
Germany
Prior art keywords
oxynitride
detectors
atmospheric
reducing gases
selectively detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686400694T
Other languages
English (en)
Inventor
Yves Colin
Gabriel Rosse
Jean Guyader
Yves Laurent
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite de Rennes 1
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite de Rennes 1
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Universite de Rennes 1 filed Critical Centre National de la Recherche Scientifique CNRS
Application granted granted Critical
Publication of DE3669784D1 publication Critical patent/DE3669784D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/17—Nitrogen containing
    • Y10T436/173845—Amine and quaternary ammonium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/17—Nitrogen containing
    • Y10T436/173845—Amine and quaternary ammonium
    • Y10T436/175383—Ammonia
DE8686400694T 1985-04-02 1986-03-28 Oxynitride verwendbar als detektoren zum selektiven feststellen von reduzierenden gasen in der atmosphaere und vorrichtung welche diese enthaelt. Expired - Lifetime DE3669784D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8504989A FR2579754B1 (fr) 1985-04-02 1985-04-02 Nitrures et oxynitrures utiles comme detecteurs selectifs de gaz reducteurs dans l'atmosphere, et dispositif de detection les contenant

Publications (1)

Publication Number Publication Date
DE3669784D1 true DE3669784D1 (de) 1990-04-26

Family

ID=9317853

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686400694T Expired - Lifetime DE3669784D1 (de) 1985-04-02 1986-03-28 Oxynitride verwendbar als detektoren zum selektiven feststellen von reduzierenden gasen in der atmosphaere und vorrichtung welche diese enthaelt.

Country Status (5)

Country Link
US (1) US4695432A (de)
EP (1) EP0201375B1 (de)
JP (1) JPS62123346A (de)
DE (1) DE3669784D1 (de)
FR (1) FR2579754B1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2638527B1 (fr) * 1988-11-02 1991-02-01 Centre Nat Rech Scient Nitrure et oxynitrures de gallium utiles comme detecteurs selectifs de gaz reducteurs dans l'atmosphere, procede pour leur preparation, et dispositif de detection les contenant
FR2724375B1 (fr) * 1994-09-12 1996-12-20 Cernix Oxynitrures de germanium et de cadmium ainsi que leurs derives, preparation et precurseurs, ainsi que leurs applications comme capteurs de gaz et catalyseurs
US6284395B1 (en) 1997-03-05 2001-09-04 Corning Applied Technologies Corp. Nitride based semiconductors and devices
US6121639A (en) * 1998-08-20 2000-09-19 Xerox Corporation Optoelectronic devices based on ZnGeN2 integrated with group III-V nitrides
US20070261951A1 (en) * 2006-04-06 2007-11-15 Yan Ye Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates
US8274078B2 (en) * 2007-04-25 2012-09-25 Canon Kabushiki Kaisha Metal oxynitride semiconductor containing zinc
EP2183780A4 (de) * 2007-08-02 2010-07-28 Applied Materials Inc Dünnfilmtransistoren mit dünnfilmhalbleitermaterialien
US8980066B2 (en) * 2008-03-14 2015-03-17 Applied Materials, Inc. Thin film metal oxynitride semiconductors
WO2009117438A2 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US8258511B2 (en) * 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
JP5451280B2 (ja) * 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
US7988470B2 (en) 2009-09-24 2011-08-02 Applied Materials, Inc. Methods of fabricating metal oxide or metal oxynitride TFTs using wet process for source-drain metal etch
US8840763B2 (en) * 2009-09-28 2014-09-23 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE771767A (fr) * 1970-08-26 1971-12-31 Nat Res Dev Dispositifs semi-conducteurs sensibles aux gaz
US3865550A (en) * 1970-08-26 1975-02-11 Nat Res Dev Semi-conducting gas sensitive devices
US4197089A (en) * 1975-12-22 1980-04-08 Ambac Industries, Incorporated Reducing gas sensor

Also Published As

Publication number Publication date
US4695432A (en) 1987-09-22
JPS62123346A (ja) 1987-06-04
EP0201375A1 (de) 1986-11-12
EP0201375B1 (de) 1990-03-21
FR2579754A1 (fr) 1986-10-03
FR2579754B1 (fr) 1987-07-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee