DE3683039D1 - Verfahren zum herstellen von silicium und sauerstoff enthaltenden schichten. - Google Patents

Verfahren zum herstellen von silicium und sauerstoff enthaltenden schichten.

Info

Publication number
DE3683039D1
DE3683039D1 DE8686104596T DE3683039T DE3683039D1 DE 3683039 D1 DE3683039 D1 DE 3683039D1 DE 8686104596 T DE8686104596 T DE 8686104596T DE 3683039 T DE3683039 T DE 3683039T DE 3683039 D1 DE3683039 D1 DE 3683039D1
Authority
DE
Germany
Prior art keywords
pref
liquid
teos
pressure
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686104596T
Other languages
English (en)
Inventor
Laszlo Biro
Konrad Malin
Otto Schmid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
Original Assignee
IBM Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM Deutschland GmbH filed Critical IBM Deutschland GmbH
Application granted granted Critical
Publication of DE3683039D1 publication Critical patent/DE3683039D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Glass Compositions (AREA)
DE8686104596T 1986-04-04 1986-04-04 Verfahren zum herstellen von silicium und sauerstoff enthaltenden schichten. Expired - Lifetime DE3683039D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP86104596A EP0239664B1 (de) 1986-04-04 1986-04-04 Verfahren zum Herstellen von Silicium und Sauerstoff enthaltenden Schichten

Publications (1)

Publication Number Publication Date
DE3683039D1 true DE3683039D1 (de) 1992-01-30

Family

ID=8195039

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686104596T Expired - Lifetime DE3683039D1 (de) 1986-04-04 1986-04-04 Verfahren zum herstellen von silicium und sauerstoff enthaltenden schichten.

Country Status (4)

Country Link
US (1) US4849259A (de)
EP (1) EP0239664B1 (de)
JP (1) JPS62238628A (de)
DE (1) DE3683039D1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0313683A1 (de) * 1987-10-30 1989-05-03 International Business Machines Corporation Verfahren zur Herstellung einer halbleitenden integrierten Schaltungsstruktur, die ein submikrometrisches Bauelement enthält
GB2213836B (en) * 1987-12-18 1992-08-26 Gen Electric Co Plc Vacuum deposition process
DE3833232A1 (de) * 1988-09-30 1990-04-05 Leybold Ag Verfahren und vorrichtung zum verdampfen von bei raumtemperatur fluessigen monomeren
JP2938461B2 (ja) * 1988-11-08 1999-08-23 株式会社東芝 Ｃｖｄ装置への液化性原料導入法
US5316639A (en) * 1989-06-05 1994-05-31 Sachiko Okazaki Dielectric material used for an ozone generator and a method of forming a film to the dielectric material
JP2688090B2 (ja) * 1989-11-10 1997-12-08 シャープ株式会社 半導体装置の製造方法
US5328872A (en) * 1989-12-29 1994-07-12 At&T Bell Laboratories Method of integrated circuit manufacturing using deposited oxide
US5098741A (en) * 1990-06-08 1992-03-24 Lam Research Corporation Method and system for delivering liquid reagents to processing vessels
NL9002164A (nl) * 1990-10-05 1992-05-06 Philips Nv Werkwijze voor het voorzien van een substraat van een oppervlaktelaag vanuit een damp en een inrichting voor het toepassen van een dergelijke werkwijze.
JPH05251707A (ja) * 1992-03-04 1993-09-28 Koudo Eizou Gijutsu Kenkyusho:Kk 薄膜トランジスタおよびその製造方法
US6964890B1 (en) 1992-03-17 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
FR2697014B1 (fr) * 1992-10-19 1995-01-20 Souchon Neuvesel Verreries Procédé de revêtement d'un substrat en matériau vitreux, par un film de silice.
US5534066A (en) * 1993-10-29 1996-07-09 International Business Machines Corporation Fluid delivery apparatus having an infrared feedline sensor
JP3373057B2 (ja) * 1994-07-29 2003-02-04 エヌオーケー株式会社 水素分離膜の製造法
DE19516669A1 (de) * 1995-05-05 1996-11-07 Siemens Ag Verfahren zur Abscheidung einer Siliziumoxidschicht
US6030445A (en) * 1997-05-15 2000-02-29 Advanced Delivery & Chemical Systems, Ltd. Multi-component mixtures for manufacturing of in situ doped borophosphosilicate
US5966624A (en) * 1997-07-29 1999-10-12 Siemens Aktiengesellschaft Method of manufacturing a semiconductor structure having a crystalline layer
DE19735399C2 (de) * 1997-08-14 2002-01-17 Infineon Technologies Ag Gasleitungssystem für einen Prozeßreaktor, insbesondere Vertikalofen, zur Behandlung von Wafern und Verfahren zur Behandlung von Wafern in einem Prozeßreaktor
KR100446318B1 (ko) * 2001-11-29 2004-09-01 주식회사 하이닉스반도체 챔버 세정기를 구비한 증착장치 및 그를 이용한 챔버 세정방법
US7601225B2 (en) * 2002-06-17 2009-10-13 Asm International N.V. System for controlling the sublimation of reactants
US7253084B2 (en) * 2004-09-03 2007-08-07 Asm America, Inc. Deposition from liquid sources
US8343583B2 (en) 2008-07-10 2013-01-01 Asm International N.V. Method for vaporizing non-gaseous precursor in a fluidized bed
US8012876B2 (en) * 2008-12-02 2011-09-06 Asm International N.V. Delivery of vapor precursor from solid source
CN105256287B (zh) * 2015-11-11 2017-09-22 南通大学 前驱体空间分隔式制备铝酸铋薄膜的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3158505A (en) * 1962-07-23 1964-11-24 Fairchild Camera Instr Co Method of placing thick oxide coatings on silicon and article
FR1385677A (fr) * 1962-12-20 1965-01-15 Ibm Procédé de fabrication de couches protectrices
GB1165575A (en) * 1966-01-03 1969-10-01 Texas Instruments Inc Semiconductor Device Stabilization.
DE1646004A1 (de) * 1967-11-25 1971-07-01 Lochte Holtgreven Walter Prof Verfahren zur Behandlung von Oberflaechen mittels elektrisch explodierter Draehte oder Fluessigkeitsstrahlen
US3934060A (en) * 1973-12-19 1976-01-20 Motorola, Inc. Method for forming a deposited silicon dioxide layer on a semiconductor wafer
JPS5191669A (en) * 1975-01-31 1976-08-11 Doopudo okisaidonoseiseihoho
CH610013A5 (de) * 1975-11-19 1979-03-30 Battelle Memorial Institute
US4512821A (en) * 1982-12-20 1985-04-23 Procedyne Corp. Method for metal treatment using a fluidized bed
US4557950A (en) * 1984-05-18 1985-12-10 Thermco Systems, Inc. Process for deposition of borophosphosilicate glass
US4619844A (en) * 1985-01-22 1986-10-28 Fairchild Camera Instrument Corp. Method and apparatus for low pressure chemical vapor deposition
ATE64237T1 (de) * 1985-05-22 1991-06-15 Siemens Ag Verfahren zum herstellen von mit bor und phosphor dotierten siliziumoxid-schichten fuer integrierte halbleiterschaltungen.
EP0208459B1 (de) * 1985-06-24 1992-03-18 Silicon Valley Group, Inc. Verfahren zum chemischen Aufdampfen einer dünnen Oxydschicht auf einem Siliziumsubstrat

Also Published As

Publication number Publication date
US4849259A (en) 1989-07-18
EP0239664A1 (de) 1987-10-07
JPS62238628A (ja) 1987-10-19
EP0239664B1 (de) 1991-12-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee