DE3686090T2 - Nmos-datenspeicherzelle und schieberegister. - Google Patents

Nmos-datenspeicherzelle und schieberegister.

Info

Publication number
DE3686090T2
DE3686090T2 DE8686106476T DE3686090T DE3686090T2 DE 3686090 T2 DE3686090 T2 DE 3686090T2 DE 8686106476 T DE8686106476 T DE 8686106476T DE 3686090 T DE3686090 T DE 3686090T DE 3686090 T2 DE3686090 T2 DE 3686090T2
Authority
DE
Germany
Prior art keywords
data storage
shift register
storage cell
nmos data
nmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686106476T
Other languages
English (en)
Other versions
DE3686090D1 (de
Inventor
Jeffrey M Bessolo
Michael A Wolf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WANG LABORATORIES, INC., BILLERICA, MASS., US
Original Assignee
Wang Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wang Laboratories Inc filed Critical Wang Laboratories Inc
Application granted granted Critical
Publication of DE3686090D1 publication Critical patent/DE3686090D1/de
Publication of DE3686090T2 publication Critical patent/DE3686090T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit
    • H03K3/356052—Bistable circuits using additional transistors in the input circuit using pass gates
    • H03K3/35606—Bistable circuits using additional transistors in the input circuit using pass gates with synchronous operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356086—Bistable circuits with additional means for controlling the main nodes
    • H03K3/356095—Bistable circuits with additional means for controlling the main nodes with synchronous operation
DE8686106476T 1985-05-13 1986-05-13 Nmos-datenspeicherzelle und schieberegister. Expired - Fee Related DE3686090T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/733,159 US4825409A (en) 1985-05-13 1985-05-13 NMOS data storage cell for clocked shift register applications

Publications (2)

Publication Number Publication Date
DE3686090D1 DE3686090D1 (de) 1992-08-27
DE3686090T2 true DE3686090T2 (de) 1993-03-18

Family

ID=24946474

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686106476T Expired - Fee Related DE3686090T2 (de) 1985-05-13 1986-05-13 Nmos-datenspeicherzelle und schieberegister.

Country Status (6)

Country Link
US (1) US4825409A (de)
EP (1) EP0202582B1 (de)
JP (1) JPH0711918B2 (de)
AU (1) AU590269B2 (de)
CA (1) CA1256995A (de)
DE (1) DE3686090T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH077901B2 (ja) * 1988-02-29 1995-01-30 沖電気工業株式会社 フリップフロップ回路
US5532958A (en) * 1990-06-25 1996-07-02 Dallas Semiconductor Corp. Dual storage cell memory
US4873665A (en) * 1988-06-07 1989-10-10 Dallas Semiconductor Corporation Dual storage cell memory including data transfer circuits
US5544078A (en) * 1988-06-17 1996-08-06 Dallas Semiconductor Corporation Timekeeping comparison circuitry and dual storage memory cells to detect alarms
US5629907A (en) * 1991-06-18 1997-05-13 Dallas Semiconductor Corporation Low power timekeeping system
US5287485A (en) * 1988-12-22 1994-02-15 Digital Equipment Corporation Digital processing system including plural memory devices and data transfer circuitry
US4897816A (en) * 1989-04-03 1990-01-30 Tektronix, Inc. Serial dynamic memory shift register
US5528463A (en) * 1993-07-16 1996-06-18 Dallas Semiconductor Corp. Low profile sockets and modules for surface mountable applications
US5579206A (en) * 1993-07-16 1996-11-26 Dallas Semiconductor Corporation Enhanced low profile sockets and module systems
CN109412580B (zh) * 2017-08-17 2022-05-03 深圳指芯智能科技有限公司 选择电路

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3389383A (en) * 1967-05-31 1968-06-18 Gen Electric Integrated circuit bistable memory cell
US3662356A (en) * 1970-08-28 1972-05-09 Gen Electric Integrated circuit bistable memory cell using charge-pumped devices
US3831155A (en) * 1971-12-29 1974-08-20 Tokyo Shibaura Electric Co Nonvolatile semiconductor shift register
US3967252A (en) * 1974-10-03 1976-06-29 Mostek Corporation Sense AMP for random access memory
JPS5159243A (en) * 1974-11-20 1976-05-24 Tokyo Shibaura Electric Co Shifuto nonshifutorejisuta
US4112296A (en) * 1977-06-07 1978-09-05 Rockwell International Corporation Data latch
JPS592997B2 (ja) * 1980-05-22 1984-01-21 富士通株式会社 スタテイツクメモリ
US4380055A (en) * 1980-12-24 1983-04-12 Mostek Corporation Static RAM memory cell
JPS57141097A (en) * 1981-02-25 1982-09-01 Toshiba Corp Storage circuit
JPS57147194A (en) * 1981-03-05 1982-09-10 Fujitsu Ltd Address buffer
JPS5823388A (ja) * 1981-08-05 1983-02-12 Nec Corp メモリ装置
US4409680A (en) * 1981-08-27 1983-10-11 Ncr Corporation High speed write control for synchronous registers
DE3147951A1 (de) * 1981-12-03 1983-06-16 Siemens AG, 1000 Berlin und 8000 München Statische speicherzelle
JPS58114391A (ja) * 1981-12-25 1983-07-07 Nec Corp センスアンプ回路
JPS59120597U (ja) * 1983-01-31 1984-08-14 カ−ル事務器株式会社 パンチ
US4598214A (en) * 1983-10-31 1986-07-01 Texas Instruments Incorporated Low power shift register latch
US4654826A (en) * 1984-08-20 1987-03-31 National Semiconductor Corporation Single device transfer static latch
US4651333A (en) * 1984-10-29 1987-03-17 Raytheon Company Shift register memory cell having a transmission gate disposed between an inverter and a level shifter
FR2573562B1 (fr) * 1984-11-21 1989-12-08 France Etat Memoire vive et circuit d'interpolation lineaire en comportant application

Also Published As

Publication number Publication date
AU590269B2 (en) 1989-11-02
US4825409A (en) 1989-04-25
EP0202582A2 (de) 1986-11-26
EP0202582A3 (en) 1989-05-31
CA1256995A (en) 1989-07-04
JPS61269298A (ja) 1986-11-28
AU5686086A (en) 1986-11-20
JPH0711918B2 (ja) 1995-02-08
DE3686090D1 (de) 1992-08-27
EP0202582B1 (de) 1992-07-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: WANG LABORATORIES, INC., BILLERICA, MASS., US

8339 Ceased/non-payment of the annual fee