DE3687425D1 - Transistoranordnung. - Google Patents

Transistoranordnung.

Info

Publication number: DE3687425D1
Authority: DE; Germany
Prior art keywords: transistor arrangement; transistor; arrangement
Prior art date: 1985-04-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE8686302859T

Other languages

English (en)

Other versions

DE3687425T2 (de

Inventor

John Lawrence Freeouf

Thomas Nelson Jackson

Peter Daniel Kirchner

Jeffrey Yuh-Fong Tang

Jerry Macpherson Woodall

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee

International Business Machines Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-04-25

Filing date

1986-04-16

Publication date

1993-02-18

1986-04-16 Application filed by International Business Machines Corp filed Critical International Business Machines Corp

1993-02-18 Application granted granted Critical

1993-02-18 Publication of DE3687425D1 publication Critical patent/DE3687425D1/de

1993-07-15 Publication of DE3687425T2 publication Critical patent/DE3687425T2/de

2006-04-17 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]

DE8686302859T 1985-04-25 1986-04-16 Transistoranordnung. Expired - Fee Related DE3687425T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US72685885A	1985-04-25	1985-04-25

Publications (2)

Publication Number	Publication Date
DE3687425D1 true DE3687425D1 (de)	1993-02-18
DE3687425T2 DE3687425T2 (de)	1993-07-15

Family

ID=24920302

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8686302859T Expired - Fee Related DE3687425T2 (de)	1985-04-25	1986-04-16	Transistoranordnung.

Country Status (5)

Country	Link
US (1)	US5049955A (de)
EP (1)	EP0200422B1 (de)
JP (1)	JPS61248561A (de)
CA (1)	CA1244149A (de)
DE (1)	DE3687425T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2780328B2 (ja) *	1989-04-26	1998-07-30	住友電気工業株式会社	ヘテロ接合バイポーラトランジスタ
EP0510557A3 (en) *	1991-04-22	1994-06-22	Nippon Telegraph & Telephone	Resonant tunneling transistor
US5365477A (en) *	1992-06-16	1994-11-15	The United States Of America As Represented By The Secretary Of The Navy	Dynamic random access memory device
US5442194A (en) *	1994-01-07	1995-08-15	Texas Instruments Incorporated	Room-temperature tunneling hot-electron transistor
TW440968B (en) *	2000-01-10	2001-06-16	Nat Science Council	Heterojunction bipolar transistor device with sun-hat-shaped negative differential resistance characteristic
US6744111B1 (en)	2003-05-15	2004-06-01	Koucheng Wu	Schottky-barrier tunneling transistor
US6963121B2 (en)	2003-05-15	2005-11-08	Koucheng Wu	Schottky-barrier tunneling transistor
JP5506258B2 (ja) *	2008-08-06	2014-05-28	キヤノン株式会社	整流素子
US11063200B2 (en) *	2015-01-12	2021-07-13	Helmut Weidlich	Device for guiding charge carriers and use thereof

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3691476A (en) *	1970-12-31	1972-09-12	Bell Telephone Labor Inc	Double heterostructure laser diodes
US3982207A (en) *	1975-03-07	1976-09-21	Bell Telephone Laboratories, Incorporated	Quantum effects in heterostructure lasers
US4141025A (en) *	1977-03-24	1979-02-20	Gosudarstvenny Nauchno-Issle-Dovatelsky I Proektny Institut Redkometallicheskoi Promyshlennosti "GIREDMET"	Semiconductor structure sensitive to pressure
US4173763A (en) *	1977-06-09	1979-11-06	International Business Machines Corporation	Heterojunction tunneling base transistor
US4163237A (en) *	1978-04-24	1979-07-31	Bell Telephone Laboratories, Incorporated	High mobility multilayered heterojunction devices employing modulated doping
US4194935A (en) *	1978-04-24	1980-03-25	Bell Telephone Laboratories, Incorporated	Method of making high mobility multilayered heterojunction devices employing modulated doping
GB2056166B (en) *	1979-08-08	1983-09-14	Philips Electronic Associated	Hot-electron or hot-hole transistor
CA1145482A (en) *	1979-12-28	1983-04-26	Takashi Mimura	High electron mobility single heterojunction semiconductor device
US4353081A (en) *	1980-01-29	1982-10-05	Bell Telephone Laboratories, Incorporated	Graded bandgap rectifying semiconductor devices
US4395722A (en) *	1980-10-21	1983-07-26	The United States Of America As Represented By The Secretary Of The Army	Heterojunction transistor
US4396931A (en) *	1981-06-12	1983-08-02	International Business Machines Corporation	Tunnel emitter upper valley transistor
JPS5946106B2 (ja) *	1981-12-10	1984-11-10	工業技術院長	超高速トランジスタ
FR2520157B1 (fr) *	1982-01-18	1985-09-13	Labo Electronique Physique	Dispositif semi-conducteur du genre transistor a heterojonction(s)
US4910562A (en) *	1982-04-26	1990-03-20	International Business Machines Corporation	Field induced base transistor
US4532533A (en) *	1982-04-27	1985-07-30	International Business Machines Corporation	Ballistic conduction semiconductor device
US4672404A (en) *	1982-09-17	1987-06-09	Cornell Research Foundation, Inc.	Ballistic heterojunction bipolar transistor
US4593305A (en) *	1983-05-17	1986-06-03	Kabushiki Kaisha Toshiba	Heterostructure bipolar transistor
JPH0810763B2 (ja) *	1983-12-28	1996-01-31	株式会社日立製作所	半導体装置
US4649405A (en) *	1984-04-10	1987-03-10	Cornell Research Foundation, Inc.	Electron ballistic injection and extraction for very high efficiency, high frequency transferred electron devices
US4672413A (en) *	1984-04-16	1987-06-09	Trw Inc.	Barrier emitter transistor
US4686550A (en) *	1984-12-04	1987-08-11	American Telephone And Telegraph Company, At&T Bell Laboratories	Heterojunction semiconductor devices having a doping interface dipole
US4691215A (en) *	1985-01-09	1987-09-01	American Telephone And Telegraph Company	Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter

1986
- 1986-01-17 JP JP61006637A patent/JPS61248561A/ja active Pending
- 1986-03-03 CA CA000503080A patent/CA1244149A/en not_active Expired
- 1986-04-16 DE DE8686302859T patent/DE3687425T2/de not_active Expired - Fee Related
- 1986-04-16 EP EP86302859A patent/EP0200422B1/de not_active Expired - Lifetime
1987
- 1987-06-12 US US07/061,036 patent/US5049955A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP0200422A2 (de)	1986-11-05
US5049955A (en)	1991-09-17
JPS61248561A (ja)	1986-11-05
DE3687425T2 (de)	1993-07-15
EP0200422A3 (en)	1988-01-07
CA1244149A (en)	1988-11-01
EP0200422B1 (de)	1993-01-07

Legal Events

Date	Code	Title	Description
1994-02-10	8364	No opposition during term of opposition
1995-04-13	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
DE3684400D1 (de)	1992-04-23	Verteilte feldeffekttransistorstruktur.
NO863645D0 (no)	1986-09-12	Glykosidforbindelser.
DE3689433D1 (de)	1994-02-03	Feldeffekttransistor.
FI864407A0 (fi)	1986-10-29	Flytande rengoeringssuspension.
ATE50243T1 (de)	1990-02-15	Fluorbenzylester.
FI860168A (fi)	1986-07-30	Medelst kiseldioxidstoft behandlade armeringskomponenter.
DE3675927D1 (de)	1991-01-10	Multizellentransistor.
DE3677141D1 (de)	1991-02-28	Feldeffekttransistoranordnung.
DE3583064D1 (de)	1991-07-11	Supraleitender transistor.
DE3688318D1 (de)	1993-05-27	Feldeffekttransistor.
DE3687425D1 (de)	1993-02-18	Transistoranordnung.
FI862145A0 (fi)	1986-05-21	Luftningsanordning foer vaetskor.
DE3773276D1 (de)	1991-10-31	Transistoranordnung.
FI860090A0 (fi)	1986-01-09	Skida.
FI872048A (fi)	1987-05-08	Stoetanordning.
DE3668540D1 (de)	1990-03-08	Enthaarungsanordnung.
FI865076A0 (fi)	1986-12-12	Tandkraemsfoerpackning.
FI864404A (fi)	1987-05-01	Befuktningsloesning foer offsettryck.
DE3686906D1 (de)	1992-11-12	Feldeffekttransistor.
DE3686087T2 (de)	1993-03-04	Feldeffekttransistor.
FI860007A (fi)	1986-07-12	Vaegg foer korsvirkeshus.
FI860212A0 (fi)	1986-01-17	Kontainerboendesystem.
ATE48748T1 (de)	1990-01-15	Streubuechse.
DE3687185D1 (de)	1993-01-14	Feldeffekttransistor.
FI870179A0 (fi)	1987-01-16	Engaongsbehaollare foer kemikalier.