DE3750007D1 - Vakuum-Vorrichtungen. - Google Patents

Vakuum-Vorrichtungen.

Info

Publication number
DE3750007D1
DE3750007D1 DE3750007T DE3750007T DE3750007D1 DE 3750007 D1 DE3750007 D1 DE 3750007D1 DE 3750007 T DE3750007 T DE 3750007T DE 3750007 T DE3750007 T DE 3750007T DE 3750007 D1 DE3750007 D1 DE 3750007D1
Authority
DE
Germany
Prior art keywords
vacuum devices
vacuum
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3750007T
Other languages
English (en)
Other versions
DE3750007T2 (de
Inventor
Rosemary Ann Lee
Neil Alexander Cade
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE3750007D1 publication Critical patent/DE3750007D1/de
Application granted granted Critical
Publication of DE3750007T2 publication Critical patent/DE3750007T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00—Vacuum tubes
    • H01J21/02—Tubes with a single discharge path
    • H01J21/06—Tubes with a single discharge path having electrostatic control means only
    • H01J21/10—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
    • H01J21/105—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode with microengineered cathode and control electrodes, e.g. Spindt-type
DE3750007T 1986-09-08 1987-09-04 Vakuum-Vorrichtungen. Expired - Fee Related DE3750007T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB868621600A GB8621600D0 (en) 1986-09-08 1986-09-08 Vacuum devices

Publications (2)

Publication Number Publication Date
DE3750007D1 true DE3750007D1 (de) 1994-07-14
DE3750007T2 DE3750007T2 (de) 1994-10-06

Family

ID=10603843

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3750007T Expired - Fee Related DE3750007T2 (de) 1986-09-08 1987-09-04 Vakuum-Vorrichtungen.

Country Status (4)

Country Link
US (1) US4827177A (de)
EP (1) EP0260075B1 (de)
DE (1) DE3750007T2 (de)
GB (2) GB8621600D0 (de)

Families Citing this family (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4904895A (en) 1987-05-06 1990-02-27 Canon Kabushiki Kaisha Electron emission device
GB8720792D0 (en) * 1987-09-04 1987-10-14 Gen Electric Co Plc Vacuum devices
CA1330827C (en) * 1988-01-06 1994-07-19 Jupiter Toy Company Production and manipulation of high charge density
DE3817897A1 (de) * 1988-01-06 1989-07-20 Jupiter Toy Co Die erzeugung und handhabung von ladungsgebilden hoher ladungsdichte
US5123039A (en) * 1988-01-06 1992-06-16 Jupiter Toy Company Energy conversion using high charge density
US5054046A (en) * 1988-01-06 1991-10-01 Jupiter Toy Company Method of and apparatus for production and manipulation of high density charge
US5153901A (en) * 1988-01-06 1992-10-06 Jupiter Toy Company Production and manipulation of charged particles
GB2218257B (en) * 1988-05-03 1992-12-23 Jupiter Toy Co Apparatus for producing and manipulating charged particles.
US5018180A (en) * 1988-05-03 1991-05-21 Jupiter Toy Company Energy conversion using high charge density
JP2630988B2 (ja) * 1988-05-26 1997-07-16 キヤノン株式会社 電子線発生装置
US5285129A (en) * 1988-05-31 1994-02-08 Canon Kabushiki Kaisha Segmented electron emission device
EP0364964B1 (de) * 1988-10-17 1996-03-27 Matsushita Electric Industrial Co., Ltd. Feldemissions-Kathoden
JP2981751B2 (ja) * 1989-03-23 1999-11-22 キヤノン株式会社 電子線発生装置及びこれを用いた画像形成装置、並びに電子線発生装置の製造方法
US4990766A (en) * 1989-05-22 1991-02-05 Murasa International Solid state electron amplifier
US5003216A (en) * 1989-06-12 1991-03-26 Hickstech Corp. Electron amplifier and method of manufacture therefor
WO1992015111A1 (en) * 1989-06-12 1992-09-03 Hickstech Corp. Electron amplifier and method of manufacture therefor
JPH0340332A (ja) * 1989-07-07 1991-02-21 Matsushita Electric Ind Co Ltd 電界放出型スウィチング素子およびその製造方法
US5217401A (en) * 1989-07-07 1993-06-08 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a field-emission type switching device
US4956574A (en) * 1989-08-08 1990-09-11 Motorola, Inc. Switched anode field emission device
US5019003A (en) * 1989-09-29 1991-05-28 Motorola, Inc. Field emission device having preformed emitters
WO1991005363A1 (en) * 1989-09-29 1991-04-18 Motorola, Inc. Flat panel display using field emission devices
US5055077A (en) * 1989-11-22 1991-10-08 Motorola, Inc. Cold cathode field emission device having an electrode in an encapsulating layer
DE69026353T2 (de) * 1989-12-19 1996-11-14 Matsushita Electric Ind Co Ltd Feldemissionsvorrichtung und Verfahren zur Herstellung derselben
US5267884A (en) * 1990-01-29 1993-12-07 Mitsubishi Denki Kabushiki Kaisha Microminiature vacuum tube and production method
JP2968014B2 (ja) * 1990-01-29 1999-10-25 三菱電機株式会社 微小真空管及びその製造方法
US5142184B1 (en) * 1990-02-09 1995-11-21 Motorola Inc Cold cathode field emission device with integral emitter ballasting
US5079476A (en) * 1990-02-09 1992-01-07 Motorola, Inc. Encapsulated field emission device
US5007873A (en) * 1990-02-09 1991-04-16 Motorola, Inc. Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process
US5030921A (en) * 1990-02-09 1991-07-09 Motorola, Inc. Cascaded cold cathode field emission devices
US5192240A (en) * 1990-02-22 1993-03-09 Seiko Epson Corporation Method of manufacturing a microelectronic vacuum device
US5214346A (en) * 1990-02-22 1993-05-25 Seiko Epson Corporation Microelectronic vacuum field emission device
JP2574500B2 (ja) * 1990-03-01 1997-01-22 松下電器産業株式会社 プレーナ型冷陰極の製造方法
US5214347A (en) * 1990-06-08 1993-05-25 The United States Of America As Represented By The Secretary Of The Navy Layered thin-edged field-emitter device
US5266155A (en) * 1990-06-08 1993-11-30 The United States Of America As Represented By The Secretary Of The Navy Method for making a symmetrical layered thin film edge field-emitter-array
US5461280A (en) * 1990-08-29 1995-10-24 Motorola Field emission device employing photon-enhanced electron emission
US5148078A (en) * 1990-08-29 1992-09-15 Motorola, Inc. Field emission device employing a concentric post
US5030895A (en) * 1990-08-30 1991-07-09 The United States Of America As Represented By The Secretary Of The Navy Field emitter array comparator
EP0504370A4 (en) * 1990-09-07 1992-12-23 Motorola, Inc. A field emission device employing a layer of single-crystal silicon
US5157309A (en) * 1990-09-13 1992-10-20 Motorola Inc. Cold-cathode field emission device employing a current source means
JP2613669B2 (ja) * 1990-09-27 1997-05-28 工業技術院長 電界放出素子及びその製造方法
US5136764A (en) * 1990-09-27 1992-08-11 Motorola, Inc. Method for forming a field emission device
US5281890A (en) * 1990-10-30 1994-01-25 Motorola, Inc. Field emission device having a central anode
EP0490536B1 (de) * 1990-11-28 1998-01-14 Matsushita Electric Industrial Co., Ltd. Mikroelektronische Feldemissionsvorrichtung
US5469015A (en) * 1990-11-28 1995-11-21 Matsushita Electric Industrial Co., Ltd. Functional vacuum microelectronic field-emission device
US5173635A (en) * 1990-11-30 1992-12-22 Motorola, Inc. Bi-directional field emission device
US5173634A (en) * 1990-11-30 1992-12-22 Motorola, Inc. Current regulated field-emission device
US5204588A (en) * 1991-01-14 1993-04-20 Sony Corporation Quantum phase interference transistor
US5112436A (en) * 1990-12-24 1992-05-12 Xerox Corporation Method of forming planar vacuum microelectronic devices with self aligned anode
US5432407A (en) * 1990-12-26 1995-07-11 Motorola, Inc. Field emission device as charge transport switch for energy storage network
JP2613697B2 (ja) 1991-01-16 1997-05-28 工業技術院長 電界放出素子
US5075595A (en) * 1991-01-24 1991-12-24 Motorola, Inc. Field emission device with vertically integrated active control
US5212426A (en) * 1991-01-24 1993-05-18 Motorola, Inc. Integrally controlled field emission flat display device
US5218273A (en) * 1991-01-25 1993-06-08 Motorola, Inc. Multi-function field emission device
US5281891A (en) * 1991-02-22 1994-01-25 Matsushita Electric Industrial Co., Ltd. Electron emission element
US5140219A (en) * 1991-02-28 1992-08-18 Motorola, Inc. Field emission display device employing an integral planar field emission control device
US5142256A (en) * 1991-04-04 1992-08-25 Motorola, Inc. Pin diode with field emission device switch
JP3235172B2 (ja) * 1991-05-13 2001-12-04 セイコーエプソン株式会社 電界電子放出装置
US5343110A (en) * 1991-06-04 1994-08-30 Matsushita Electric Industrial Co., Ltd. Electron emission element
US5144191A (en) * 1991-06-12 1992-09-01 Mcnc Horizontal microelectronic field emission devices
US5233263A (en) * 1991-06-27 1993-08-03 International Business Machines Corporation Lateral field emission devices
US5384509A (en) * 1991-07-18 1995-01-24 Motorola, Inc. Field emission device with horizontal emitter
US5227699A (en) * 1991-08-16 1993-07-13 Amoco Corporation Recessed gate field emission
JP3072795B2 (ja) * 1991-10-08 2000-08-07 キヤノン株式会社 電子放出素子と該素子を用いた電子線発生装置及び画像形成装置
US5536193A (en) * 1991-11-07 1996-07-16 Microelectronics And Computer Technology Corporation Method of making wide band gap field emitter
US5763997A (en) * 1992-03-16 1998-06-09 Si Diamond Technology, Inc. Field emission display device
US5675216A (en) * 1992-03-16 1997-10-07 Microelectronics And Computer Technololgy Corp. Amorphic diamond film flat field emission cathode
US6127773A (en) * 1992-03-16 2000-10-03 Si Diamond Technology, Inc. Amorphic diamond film flat field emission cathode
US5449970A (en) * 1992-03-16 1995-09-12 Microelectronics And Computer Technology Corporation Diode structure flat panel display
US5543684A (en) 1992-03-16 1996-08-06 Microelectronics And Computer Technology Corporation Flat panel display based on diamond thin films
US5600200A (en) * 1992-03-16 1997-02-04 Microelectronics And Computer Technology Corporation Wire-mesh cathode
US5409568A (en) * 1992-08-04 1995-04-25 Vasche; Gregory S. Method of fabricating a microelectronic vacuum triode structure
US5312777A (en) * 1992-09-25 1994-05-17 International Business Machines Corporation Fabrication methods for bidirectional field emission devices and storage structures
JPH08138561A (ja) * 1992-12-07 1996-05-31 Mitsuteru Kimura 微小真空デバイス
EP0681311B1 (de) * 1993-01-19 2002-03-13 KARPOV, Leonid Danilovich Feldeffekt-emissionsvorrichtung
WO1995012835A1 (en) * 1993-11-04 1995-05-11 Microelectronics And Computer Technology Corporation Methods for fabricating flat panel display systems and components
US5445550A (en) * 1993-12-22 1995-08-29 Xie; Chenggang Lateral field emitter device and method of manufacturing same
US5629580A (en) * 1994-10-28 1997-05-13 International Business Machines Corporation Lateral field emission devices for display elements and methods of fabrication
KR100322696B1 (ko) * 1995-03-29 2002-06-20 김순택 전계효과전자방출용마이크로-팁및그제조방법
US5713775A (en) * 1995-05-02 1998-02-03 Massachusetts Institute Of Technology Field emitters of wide-bandgap materials and methods for their fabrication
US5644188A (en) * 1995-05-08 1997-07-01 Advanced Vision Technologies, Inc. Field emission display cell structure
US5630741A (en) * 1995-05-08 1997-05-20 Advanced Vision Technologies, Inc. Fabrication process for a field emission display cell structure
WO1996038854A1 (en) * 1995-06-02 1996-12-05 Advanced Vision Technologies, Inc. Lateral-emitter field-emission device with simplified anode and fabrication thereof
US5811929A (en) * 1995-06-02 1998-09-22 Advanced Vision Technologies, Inc. Lateral-emitter field-emission device with simplified anode
US5703380A (en) * 1995-06-13 1997-12-30 Advanced Vision Technologies Inc. Laminar composite lateral field-emission cathode
US5647998A (en) * 1995-06-13 1997-07-15 Advanced Vision Technologies, Inc. Fabrication process for laminar composite lateral field-emission cathode
US5616061A (en) * 1995-07-05 1997-04-01 Advanced Vision Technologies, Inc. Fabrication process for direct electron injection field-emission display device
US5644190A (en) * 1995-07-05 1997-07-01 Advanced Vision Technologies, Inc. Direct electron injection field-emission display device
US5628663A (en) * 1995-09-06 1997-05-13 Advanced Vision Technologies, Inc. Fabrication process for high-frequency field-emission device
US5666019A (en) * 1995-09-06 1997-09-09 Advanced Vision Technologies, Inc. High-frequency field-emission device
US6015324A (en) * 1996-12-30 2000-01-18 Advanced Vision Technologies, Inc. Fabrication process for surface electron display device with electron sink
US5872421A (en) * 1996-12-30 1999-02-16 Advanced Vision Technologies, Inc. Surface electron display device with electron sink
US5828163A (en) * 1997-01-13 1998-10-27 Fed Corporation Field emitter device with a current limiter structure
ATE370793T1 (de) * 2000-04-13 2007-09-15 Wako Pure Chem Ind Ltd Elektroden-bau für dielektrophoretische anordnung und dielektrophoretische trennung
US7259510B1 (en) * 2000-08-30 2007-08-21 Agere Systems Inc. On-chip vacuum tube device and process for making device
JP3703415B2 (ja) * 2001-09-07 2005-10-05 キヤノン株式会社 電子放出素子、電子源及び画像形成装置、並びに電子放出素子及び電子源の製造方法
KR20050076454A (ko) * 2004-01-20 2005-07-26 삼성에스디아이 주식회사 전계방출형 백라이트 장치
KR20070010660A (ko) * 2005-07-19 2007-01-24 삼성에스디아이 주식회사 전자 방출 소자 및 이를 구비한 평판 디스플레이 장치
KR20070011804A (ko) * 2005-07-21 2007-01-25 삼성에스디아이 주식회사 전자 방출 소자 및 이를 구비한 평판 디스플레이 장치
TWI260669B (en) * 2005-07-26 2006-08-21 Ind Tech Res Inst Field emission light-emitting device
KR100706799B1 (ko) * 2005-10-07 2007-04-12 삼성전자주식회사 필라멘트 부재 및 이를 가지는 이온 주입 장치의 이온 소스
CN100583350C (zh) * 2006-07-19 2010-01-20 清华大学 微型场发射电子器件
US8159119B2 (en) * 2007-11-30 2012-04-17 Electronics And Telecommunications Research Institute Vacuum channel transistor and manufacturing method thereof
KR101042962B1 (ko) * 2008-10-29 2011-06-20 한국전자통신연구원 열음극 전자방출 진공 채널 트랜지스터, 다이오드 및 그 진공 채널 트랜지스터의 제조방법
US9680116B2 (en) 2015-09-02 2017-06-13 International Business Machines Corporation Carbon nanotube vacuum transistors
US9805900B1 (en) * 2016-05-04 2017-10-31 Lockheed Martin Corporation Two-dimensional graphene cold cathode, anode, and grid
CN110875165A (zh) * 2018-08-30 2020-03-10 中国科学院微电子研究所 一种场发射阴极电子源及其阵列
US10937620B2 (en) * 2018-09-26 2021-03-02 International Business Machines Corporation Vacuum channel transistor structures with sub-10 nanometer nanogaps and layered metal electrodes

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1204367A (fr) * 1958-03-24 1960-01-26 Csf Cathode thermoélectronique froide à semi-conducteur
GB888955A (en) * 1958-05-14 1962-02-07 Standard Telephones Cables Ltd Improvements in electron discharge devices
US3359448A (en) * 1964-11-04 1967-12-19 Research Corp Low work function thin film gap emitter
GB1309423A (en) * 1969-03-14 1973-03-14 Matsushita Electric Ind Co Ltd Field-emission cathodes and methods for preparing these cathodes
US3748522A (en) * 1969-10-06 1973-07-24 Stanford Research Inst Integrated vacuum circuits
US3788723A (en) * 1972-04-24 1974-01-29 Fairchild Camera Instr Co Method of preparing cavity envelopes by means of thin-film procedures
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
DE3133786A1 (de) * 1981-08-26 1983-03-10 Battelle-Institut E.V., 6000 Frankfurt Anordnung zur erzeugung von feldemission und verfahren zu ihrer herstellung
NL8104893A (nl) * 1981-10-29 1983-05-16 Philips Nv Kathodestraalbuis en halfgeleiderinrichting voor toepassing in een dergelijke kathodestraalbuis.
US4728851A (en) * 1982-01-08 1988-03-01 Ford Motor Company Field emitter device with gated memory
US4578614A (en) * 1982-07-23 1986-03-25 The United States Of America As Represented By The Secretary Of The Navy Ultra-fast field emitter array vacuum integrated circuit switching device
US4712039A (en) * 1986-04-11 1987-12-08 Hong Lazaro M Vacuum integrated circuit
US4904895A (en) * 1987-05-06 1990-02-27 Canon Kabushiki Kaisha Electron emission device

Also Published As

Publication number Publication date
EP0260075A3 (en) 1989-05-10
GB8718514D0 (en) 1987-10-21
GB2195046A (en) 1988-03-23
GB2195046B (en) 1990-07-11
EP0260075B1 (de) 1994-06-08
DE3750007T2 (de) 1994-10-06
US4827177A (en) 1989-05-02
EP0260075A2 (de) 1988-03-16
GB8621600D0 (en) 1987-03-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee