DE3750470D1 - Plasmaverfahren zur Herstellung mittels einer Plasmaentladung hergestellter Schichten bei niedriger Temperatur. - Google Patents

Plasmaverfahren zur Herstellung mittels einer Plasmaentladung hergestellter Schichten bei niedriger Temperatur.

Info

Publication number
DE3750470D1
DE3750470D1 DE3750470T DE3750470T DE3750470D1 DE 3750470 D1 DE3750470 D1 DE 3750470D1 DE 3750470 T DE3750470 T DE 3750470T DE 3750470 T DE3750470 T DE 3750470T DE 3750470 D1 DE3750470 D1 DE 3750470D1
Authority
DE
Germany
Prior art keywords
plasma
substrate
vacuum deposition
deposition chamber
precursor composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3750470T
Other languages
English (en)
Other versions
DE3750470T2 (de
Inventor
Stephen J Hudgens
Annette G Johncock
Stanford R Ovshinsky
Prem Nath
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of DE3750470D1 publication Critical patent/DE3750470D1/de
Application granted granted Critical
Publication of DE3750470T2 publication Critical patent/DE3750470T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
    • B32B17/10018—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising only one glass sheet
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H01J37/32275—Microwave reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2375/00—Polyureas; Polyurethanes
DE3750470T 1987-03-31 1987-12-14 Plasmaverfahren zur Herstellung mittels einer Plasmaentladung hergestellter Schichten bei niedriger Temperatur. Expired - Lifetime DE3750470T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/032,263 US4737379A (en) 1982-09-24 1987-03-31 Plasma deposited coatings, and low temperature plasma method of making same

Publications (2)

Publication Number Publication Date
DE3750470D1 true DE3750470D1 (de) 1994-10-06
DE3750470T2 DE3750470T2 (de) 1995-02-09

Family

ID=21863988

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3750470T Expired - Lifetime DE3750470T2 (de) 1987-03-31 1987-12-14 Plasmaverfahren zur Herstellung mittels einer Plasmaentladung hergestellter Schichten bei niedriger Temperatur.

Country Status (6)

Country Link
US (1) US4737379A (de)
EP (1) EP0284693B1 (de)
JP (1) JP2648492B2 (de)
AT (1) ATE110795T1 (de)
CA (1) CA1325793C (de)
DE (1) DE3750470T2 (de)

Families Citing this family (191)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0676666B2 (ja) * 1987-02-10 1994-09-28 株式会社半導体エネルギ−研究所 炭素膜作製方法
US4912065A (en) * 1987-05-28 1990-03-27 Matsushita Electric Industrial Co., Ltd. Plasma doping method
DE3725700A1 (de) * 1987-08-03 1989-02-16 Siemens Ag Neues halbleitergrundmaterial
US4973345A (en) * 1987-10-13 1990-11-27 British Telecommunications Public Limited Company Surface treatments for optical fibre preforms
USH665H (en) 1987-10-19 1989-08-01 Bell Telephone Laboratories, Incorporated Resistive field shields for high voltage devices
US5424131A (en) * 1987-11-30 1995-06-13 Polyplasma, Inc. Barrier coatings on spacecraft materials
US5041303A (en) * 1988-03-07 1991-08-20 Polyplasma Incorporated Process for modifying large polymeric surfaces
US4822703A (en) * 1988-04-04 1989-04-18 Xerox Corporation Photoresponsive imaging members with polygermanes
NL8801379A (nl) * 1988-05-30 1989-12-18 Imec Inter Uni Micro Electr Werkwijze voor het vervaardigen van een dunne-filmtransistor en een dergelijke dunne-filmtransistor.
DE3923390A1 (de) * 1988-07-14 1990-01-25 Canon Kk Vorrichtung zur bildung eines grossflaechigen aufgedampften films unter verwendung von wenigstens zwei getrennt gebildeten aktivierten gasen
JPH02159716A (ja) * 1988-12-14 1990-06-19 Shin Etsu Chem Co Ltd Ｘ線リソグラフィー用ＳｉＣ膜およびその成膜方法
AU624203B2 (en) * 1988-12-21 1992-06-04 Sumitomo Electric Industries, Ltd. Method and apparatus for producing coated optical fiber
US5227196A (en) * 1989-02-16 1993-07-13 Semiconductor Energy Laboratory Co., Ltd. Method of forming a carbon film on a substrate made of an oxide material
JP3111353B2 (ja) * 1989-08-31 2000-11-20 橋本フォーミング工業株式会社 透明樹脂成形品の製造方法
US5190792A (en) * 1989-09-27 1993-03-02 International Business Machines Corporation High-throughput, low-temperature process for depositing oxides
US5198298A (en) * 1989-10-24 1993-03-30 Advanced Micro Devices, Inc. Etch stop layer using polymers
JPH03144938A (ja) * 1989-10-30 1991-06-20 Sharp Corp 光メモリ素子
US5229165A (en) * 1989-11-09 1993-07-20 Allied-Signal Inc. Plasma sprayed continuously reinforced aluminum base composites
US4981713A (en) * 1990-02-14 1991-01-01 E. I. Du Pont De Nemours And Company Low temperature plasma technology for corrosion protection of steel
FR2661688B1 (fr) * 1990-05-02 1992-07-17 Air Liquide Revetement multicouche pour substrat polycarbonate et procede d'elaboration d'un tel revetement.
JP3090979B2 (ja) * 1990-09-04 2000-09-25 株式会社リコー 基板付薄膜積層デバイスおよびその製法
DE69116058T2 (de) * 1990-09-27 1996-08-22 At & T Corp Verfahren zur Herstellung integrierter Schaltungen
FR2673633B1 (fr) * 1991-03-06 1993-06-11 Air Liquide Revetement multicouche pour substrat polycarbonate.
US5234748A (en) * 1991-06-19 1993-08-10 Ford Motor Company Anti-reflective transparent coating with gradient zone
US5231048A (en) * 1991-12-23 1993-07-27 United Solar Systems Corporation Microwave energized deposition process wherein the deposition is carried out at a pressure less than the pressure of the minimum point on the deposition system's paschen curve
JPH0697070A (ja) * 1992-09-11 1994-04-08 Sanyo Electric Co Ltd 多結晶シリコン膜の製造方法
US5670224A (en) * 1992-11-13 1997-09-23 Energy Conversion Devices, Inc. Modified silicon oxide barrier coatings produced by microwave CVD deposition on polymeric substrates
JP2804700B2 (ja) * 1993-03-31 1998-09-30 富士通株式会社 半導体装置の製造装置及び半導体装置の製造方法
US20040241454A1 (en) * 1993-10-04 2004-12-02 Shaw David G. Barrier sheet and method of making same
US5565248A (en) * 1994-02-09 1996-10-15 The Coca-Cola Company Method and apparatus for coating hollow containers through plasma-assisted deposition of an inorganic substance
US6149982A (en) * 1994-02-16 2000-11-21 The Coca-Cola Company Method of forming a coating on an inner surface
MX9504279A (es) * 1994-02-16 1997-05-31 Coca Cola Co Envases huecos que tienen una capa superficial interna, inerte o impermeable, obtenida mediante polimerizacion sobre la superficie o reaccion de la superficie asistida por plasma.
US5571470A (en) 1994-02-18 1996-11-05 The Coca-Cola Company Method for fabricating a thin inner barrier layer within a preform
JP3061255B2 (ja) * 1995-08-18 2000-07-10 キヤノン販売株式会社 成膜方法
US6316111B1 (en) * 1996-03-01 2001-11-13 Cardinal Cg Company Heat-emperable coated glass article
US6231999B1 (en) * 1996-06-21 2001-05-15 Cardinal Ig Company Heat temperable transparent coated glass article
JP3178375B2 (ja) * 1997-06-03 2001-06-18 日本電気株式会社 絶縁膜の形成方法
US6627305B1 (en) * 1997-07-16 2003-09-30 Koninklijke Philips Electronics N.V. Substrates for large area electronic devices
US5959247A (en) * 1997-07-22 1999-09-28 Armstrong; Joseph H. Low cost protective coating and method for a die-on-board electronic assembly
US6090358A (en) * 1997-08-20 2000-07-18 National Science Council Of Republic Of China Crystalline Six Cy Nz and method for synthesis
DE19744060C2 (de) * 1997-10-06 1999-08-12 Fraunhofer Ges Forschung Verfahren und Vorrichtung zur Oberflächenbehandlung von Substraten
US6020458A (en) 1997-10-24 2000-02-01 Quester Technology, Inc. Precursors for making low dielectric constant materials with improved thermal stability
US6051321A (en) 1997-10-24 2000-04-18 Quester Technology, Inc. Low dielectric constant materials and method
US6287888B1 (en) 1997-12-26 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and process for producing photoelectric conversion device
JPH11279773A (ja) * 1998-03-27 1999-10-12 Tomoo Ueno 成膜方法
AU3870899A (en) * 1998-05-01 1999-11-23 Seshu B. Desu Oxide/organic polymer multilayer thin films deposited by chemical vapor deposition
JP4174862B2 (ja) * 1998-08-04 2008-11-05 ソニー株式会社 薄膜トランジスタの製造方法および半導体装置の製造方法
JP2000127290A (ja) * 1998-09-30 2000-05-09 Becton Dickinson & Co バリア被覆および高出力プラズマ化学気相成長法によってプラスチック物体上にバリア被覆を堆積する方法
US6140187A (en) * 1998-12-02 2000-10-31 Lucent Technologies Inc. Process for forming metal oxide semiconductors including an in situ furnace gate stack with varying silicon nitride deposition rate
US6495208B1 (en) 1999-09-09 2002-12-17 Virginia Tech Intellectual Properties, Inc. Near-room temperature CVD synthesis of organic polymer/oxide dielectric nanocomposites
EP1754691B1 (de) 1999-12-02 2009-02-11 Cardinal CG Company Gegen Anlaufen beständiges durchsichtiges Beschichtungssystem
JP3477148B2 (ja) 1999-12-02 2003-12-10 カーディナル・シージー・カンパニー 耐曇り性透明フィルム積層体
US6630413B2 (en) 2000-04-28 2003-10-07 Asm Japan K.K. CVD syntheses of silicon nitride materials
US6559026B1 (en) 2000-05-25 2003-05-06 Applied Materials, Inc Trench fill with HDP-CVD process including coupled high power density plasma deposition
US6193379B1 (en) 2000-06-09 2001-02-27 Gentex Corporation Electrochromic assembly including at least one polymeric substrate
WO2002033728A1 (de) * 2000-10-19 2002-04-25 Robert Bosch Gmbh Vorrichtung und verfahren zum ätzen eines substrates mittels eines induktiv gekoppelten plasmas
US6638820B2 (en) 2001-02-08 2003-10-28 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices
KR101050377B1 (ko) * 2001-02-12 2011-07-20 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
JP4742429B2 (ja) * 2001-02-19 2011-08-10 住友電気工業株式会社 ガラス微粒子堆積体の製造方法
US6727192B2 (en) 2001-03-01 2004-04-27 Micron Technology, Inc. Methods of metal doping a chalcogenide material
US6734455B2 (en) 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US6896968B2 (en) * 2001-04-06 2005-05-24 Honeywell International Inc. Coatings and method for protecting carbon-containing components from oxidation
US6732551B2 (en) 2001-05-04 2004-05-11 Corning Incorporated Method and feedstock for making silica
US6596653B2 (en) * 2001-05-11 2003-07-22 Applied Materials, Inc. Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
US6740601B2 (en) 2001-05-11 2004-05-25 Applied Materials Inc. HDP-CVD deposition process for filling high aspect ratio gaps
US7102150B2 (en) * 2001-05-11 2006-09-05 Harshfield Steven T PCRAM memory cell and method of making same
US6951805B2 (en) * 2001-08-01 2005-10-04 Micron Technology, Inc. Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry
US6737312B2 (en) 2001-08-27 2004-05-18 Micron Technology, Inc. Method of fabricating dual PCRAM cells sharing a common electrode
US6955940B2 (en) * 2001-08-29 2005-10-18 Micron Technology, Inc. Method of forming chalcogenide comprising devices
US6881623B2 (en) * 2001-08-29 2005-04-19 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device
US6784018B2 (en) * 2001-08-29 2004-08-31 Micron Technology, Inc. Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry
US6709958B2 (en) * 2001-08-30 2004-03-23 Micron Technology, Inc. Integrated circuit device and fabrication using metal-doped chalcogenide materials
US20030047765A1 (en) * 2001-08-30 2003-03-13 Campbell Kristy A. Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
US6987162B2 (en) 2001-10-23 2006-01-17 Tien Tsai Lin Method and apparatus of producing high-density polyimide (HPI) film
US6709714B2 (en) * 2001-10-23 2004-03-23 Tien Tsai Lin Method and apparatus of producing high-density polyidimide (HPI) film
US6815818B2 (en) * 2001-11-19 2004-11-09 Micron Technology, Inc. Electrode structure for use in an integrated circuit
US6791859B2 (en) * 2001-11-20 2004-09-14 Micron Technology, Inc. Complementary bit PCRAM sense amplifier and method of operation
US6873538B2 (en) * 2001-12-20 2005-03-29 Micron Technology, Inc. Programmable conductor random access memory and a method for writing thereto
US6909656B2 (en) * 2002-01-04 2005-06-21 Micron Technology, Inc. PCRAM rewrite prevention
US20030143782A1 (en) * 2002-01-31 2003-07-31 Gilton Terry L. Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures
US6867064B2 (en) * 2002-02-15 2005-03-15 Micron Technology, Inc. Method to alter chalcogenide glass for improved switching characteristics
US6791885B2 (en) * 2002-02-19 2004-09-14 Micron Technology, Inc. Programmable conductor random access memory and method for sensing same
US6891749B2 (en) * 2002-02-20 2005-05-10 Micron Technology, Inc. Resistance variable ‘on ’ memory
US6809362B2 (en) * 2002-02-20 2004-10-26 Micron Technology, Inc. Multiple data state memory cell
US7151273B2 (en) * 2002-02-20 2006-12-19 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
US7087919B2 (en) * 2002-02-20 2006-08-08 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
JP4031760B2 (ja) * 2002-03-01 2008-01-09 日本板硝子株式会社 低放射率コーティングを備えた基材
US6919133B2 (en) 2002-03-01 2005-07-19 Cardinal Cg Company Thin film coating having transparent base layer
US6937528B2 (en) * 2002-03-05 2005-08-30 Micron Technology, Inc. Variable resistance memory and method for sensing same
US6849868B2 (en) * 2002-03-14 2005-02-01 Micron Technology, Inc. Methods and apparatus for resistance variable material cells
US6858482B2 (en) * 2002-04-10 2005-02-22 Micron Technology, Inc. Method of manufacture of programmable switching circuits and memory cells employing a glass layer
US6855975B2 (en) * 2002-04-10 2005-02-15 Micron Technology, Inc. Thin film diode integrated with chalcogenide memory cell
US6864500B2 (en) 2002-04-10 2005-03-08 Micron Technology, Inc. Programmable conductor memory cell structure
US6812153B2 (en) * 2002-04-30 2004-11-02 Applied Materials Inc. Method for high aspect ratio HDP CVD gapfill
US6825135B2 (en) 2002-06-06 2004-11-30 Micron Technology, Inc. Elimination of dendrite formation during metal/chalcogenide glass deposition
US6890790B2 (en) 2002-06-06 2005-05-10 Micron Technology, Inc. Co-sputter deposition of metal-doped chalcogenides
US20040018750A1 (en) * 2002-07-02 2004-01-29 Sophie Auguste J.L. Method for deposition of nitrogen doped silicon carbide films
JP4027282B2 (ja) * 2002-07-10 2007-12-26 キヤノン株式会社 インクジェット記録ヘッド
US7015494B2 (en) * 2002-07-10 2006-03-21 Micron Technology, Inc. Assemblies displaying differential negative resistance
US7209378B2 (en) * 2002-08-08 2007-04-24 Micron Technology, Inc. Columnar 1T-N memory cell structure
US7186630B2 (en) * 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US7018863B2 (en) * 2002-08-22 2006-03-28 Micron Technology, Inc. Method of manufacture of a resistance variable memory cell
US7294527B2 (en) 2002-08-29 2007-11-13 Micron Technology Inc. Method of forming a memory cell
US7163837B2 (en) 2002-08-29 2007-01-16 Micron Technology, Inc. Method of forming a resistance variable memory element
US6831019B1 (en) * 2002-08-29 2004-12-14 Micron Technology, Inc. Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
US7010644B2 (en) * 2002-08-29 2006-03-07 Micron Technology, Inc. Software refreshed memory device and method
US20040040837A1 (en) * 2002-08-29 2004-03-04 Mcteer Allen Method of forming chalcogenide sputter target
US7364644B2 (en) * 2002-08-29 2008-04-29 Micron Technology, Inc. Silver selenide film stoichiometry and morphology control in sputter deposition
US6864521B2 (en) * 2002-08-29 2005-03-08 Micron Technology, Inc. Method to control silver concentration in a resistance variable memory element
US6867996B2 (en) 2002-08-29 2005-03-15 Micron Technology, Inc. Single-polarity programmable resistance-variable memory element
US6856002B2 (en) * 2002-08-29 2005-02-15 Micron Technology, Inc. Graded GexSe100-x concentration in PCRAM
US6867114B2 (en) 2002-08-29 2005-03-15 Micron Technology Inc. Methods to form a memory cell with metal-rich metal chalcogenide
US7628897B2 (en) * 2002-10-23 2009-12-08 Applied Materials, Inc. Reactive ion etching for semiconductor device feature topography modification
US7097886B2 (en) * 2002-12-13 2006-08-29 Applied Materials, Inc. Deposition process for high aspect ratio trenches
US6808748B2 (en) * 2003-01-23 2004-10-26 Applied Materials, Inc. Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology
US6813178B2 (en) 2003-03-12 2004-11-02 Micron Technology, Inc. Chalcogenide glass constant current device, and its method of fabrication and operation
US7022579B2 (en) * 2003-03-14 2006-04-04 Micron Technology, Inc. Method for filling via with metal
US7050327B2 (en) * 2003-04-10 2006-05-23 Micron Technology, Inc. Differential negative resistance memory
US7081414B2 (en) * 2003-05-23 2006-07-25 Applied Materials, Inc. Deposition-selective etch-deposition process for dielectric film gapfill
US6958112B2 (en) * 2003-05-27 2005-10-25 Applied Materials, Inc. Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation
US7205240B2 (en) 2003-06-04 2007-04-17 Applied Materials, Inc. HDP-CVD multistep gapfill process
US6930909B2 (en) * 2003-06-25 2005-08-16 Micron Technology, Inc. Memory device and methods of controlling resistance variation and resistance profile drift
US7052587B2 (en) * 2003-06-27 2006-05-30 General Motors Corporation Photoelectrochemical device and electrode
US6961277B2 (en) 2003-07-08 2005-11-01 Micron Technology, Inc. Method of refreshing a PCRAM memory device
US7061004B2 (en) * 2003-07-21 2006-06-13 Micron Technology, Inc. Resistance variable memory elements and methods of formation
US6903031B2 (en) * 2003-09-03 2005-06-07 Applied Materials, Inc. In-situ-etch-assisted HDP deposition using SiF4 and hydrogen
US20050059186A1 (en) * 2003-09-15 2005-03-17 Kelly Nelson A. Photoelectrochemical device and method of making
US6903361B2 (en) 2003-09-17 2005-06-07 Micron Technology, Inc. Non-volatile memory structure
US7153721B2 (en) * 2004-01-28 2006-12-26 Micron Technology, Inc. Resistance variable memory elements based on polarized silver-selenide network growth
US7105864B2 (en) * 2004-01-29 2006-09-12 Micron Technology, Inc. Non-volatile zero field splitting resonance memory
US7087497B2 (en) * 2004-03-04 2006-08-08 Applied Materials Low-thermal-budget gapfill process
US7583551B2 (en) * 2004-03-10 2009-09-01 Micron Technology, Inc. Power management control and controlling memory refresh operations
US7098068B2 (en) * 2004-03-10 2006-08-29 Micron Technology, Inc. Method of forming a chalcogenide material containing device
US7106488B2 (en) * 2004-03-23 2006-09-12 Air Products And Chemicals, Inc. Hybrid process for depositing electrochromic coating
US20050260356A1 (en) * 2004-05-18 2005-11-24 Applied Materials, Inc. Microcontamination abatement in semiconductor processing
US7229931B2 (en) * 2004-06-16 2007-06-12 Applied Materials, Inc. Oxygen plasma treatment for enhanced HDP-CVD gapfill
US7550067B2 (en) * 2004-06-25 2009-06-23 Guardian Industries Corp. Coated article with ion treated underlayer and corresponding method
US7183227B1 (en) * 2004-07-01 2007-02-27 Applied Materials, Inc. Use of enhanced turbomolecular pump for gapfill deposition using high flows of low-mass fluent gas
US7326950B2 (en) 2004-07-19 2008-02-05 Micron Technology, Inc. Memory device with switching glass layer
US7354793B2 (en) 2004-08-12 2008-04-08 Micron Technology, Inc. Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element
US7190048B2 (en) * 2004-07-19 2007-03-13 Micron Technology, Inc. Resistance variable memory device and method of fabrication
US7365411B2 (en) 2004-08-12 2008-04-29 Micron Technology, Inc. Resistance variable memory with temperature tolerant materials
US7087536B2 (en) * 2004-09-01 2006-08-08 Applied Materials Silicon oxide gapfill deposition using liquid precursors
US7151688B2 (en) * 2004-09-01 2006-12-19 Micron Technology, Inc. Sensing of resistance variable memory devices
CA2582286A1 (en) * 2004-10-29 2006-05-11 Dow Global Technologies Inc. Abrasion resistant coatings by plasma enhanced chemical vapor deposition
DE502004012093D1 (de) * 2004-11-05 2011-02-17 Satisloh Ag Verfahren zum Aufbringen optischer Beschichtungen
US20060131555A1 (en) * 2004-12-22 2006-06-22 Micron Technology, Inc. Resistance variable devices with controllable channels
US7374174B2 (en) * 2004-12-22 2008-05-20 Micron Technology, Inc. Small electrode for resistance variable devices
DE102005008260A1 (de) * 2005-02-22 2006-08-24 Basf Ag Artikel enthaltend Polystyrol und thermoplastisches Polyurethan
US7317200B2 (en) 2005-02-23 2008-01-08 Micron Technology, Inc. SnSe-based limited reprogrammable cell
US20060210425A1 (en) * 2005-03-21 2006-09-21 Laura Mirkarimi Inorganic coatings for optical and other applications
WO2006105419A1 (en) * 2005-03-31 2006-10-05 Cardinal Cg Company Haze-resistant low-emissivity coatings
US7427770B2 (en) * 2005-04-22 2008-09-23 Micron Technology, Inc. Memory array for increased bit density
US7709289B2 (en) * 2005-04-22 2010-05-04 Micron Technology, Inc. Memory elements having patterned electrodes and method of forming the same
US7269044B2 (en) 2005-04-22 2007-09-11 Micron Technology, Inc. Method and apparatus for accessing a memory array
DE102005020511A1 (de) * 2005-04-29 2006-11-09 Basf Ag Verbundelement, insbeondere Fensterscheibe
US7269079B2 (en) * 2005-05-16 2007-09-11 Micron Technology, Inc. Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
US7233520B2 (en) * 2005-07-08 2007-06-19 Micron Technology, Inc. Process for erasing chalcogenide variable resistance memory bits
US7274034B2 (en) 2005-08-01 2007-09-25 Micron Technology, Inc. Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US7332735B2 (en) * 2005-08-02 2008-02-19 Micron Technology, Inc. Phase change memory cell and method of formation
US7317567B2 (en) * 2005-08-02 2008-01-08 Micron Technology, Inc. Method and apparatus for providing color changing thin film material
US20070037316A1 (en) * 2005-08-09 2007-02-15 Micron Technology, Inc. Memory cell contact using spacers
US7579615B2 (en) 2005-08-09 2009-08-25 Micron Technology, Inc. Access transistor for memory device
US7304368B2 (en) * 2005-08-11 2007-12-04 Micron Technology, Inc. Chalcogenide-based electrokinetic memory element and method of forming the same
US7251154B2 (en) * 2005-08-15 2007-07-31 Micron Technology, Inc. Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
US7277313B2 (en) * 2005-08-31 2007-10-02 Micron Technology, Inc. Resistance variable memory element with threshold device and method of forming the same
CN100467117C (zh) * 2005-09-05 2009-03-11 鸿富锦精密工业（深圳）有限公司 纳米粉体制备装置及制备方法
US7572511B2 (en) * 2005-10-11 2009-08-11 Cardinal Cg Company High infrared reflection coatings
US7339728B2 (en) * 2005-10-11 2008-03-04 Cardinal Cg Company Low-emissivity coatings having high visible transmission and low solar heat gain coefficient
US7342716B2 (en) 2005-10-11 2008-03-11 Cardinal Cg Company Multiple cavity low-emissivity coatings
EP1954749A1 (de) * 2005-11-29 2008-08-13 Nanon A/S Verfahren zur herstellung einer gasbarriere-polymerfolie und gasbarriere-polymerfolie
US7560723B2 (en) 2006-08-29 2009-07-14 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
US7678715B2 (en) * 2007-12-21 2010-03-16 Applied Materials, Inc. Low wet etch rate silicon nitride film
CA2765337C (en) 2008-06-13 2016-05-17 Fablab Inc. A system and method for fabricating macroscopic objects, and nano-assembled objects obtained therewith
DE102008028140B3 (de) * 2008-06-13 2009-12-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer transparenten und leitfähigen Metalloxidschicht durch gepulstes, hochionisierendes Magnetronsputtern
US8467236B2 (en) * 2008-08-01 2013-06-18 Boise State University Continuously variable resistor
US20110005920A1 (en) * 2009-07-13 2011-01-13 Seagate Technology Llc Low Temperature Deposition of Amorphous Thin Films
WO2011022683A1 (en) * 2009-08-20 2011-02-24 Research Foundation Of The City University Of New York A method for conversion of carbon dioxide to methane using visible and near infra-red light
US8759664B2 (en) 2009-12-28 2014-06-24 Hanergy Hi-Tech Power (Hk) Limited Thin film solar cell strings
US8569183B2 (en) * 2010-03-01 2013-10-29 Fairchild Semiconductor Corporation Low temperature dielectric flow using microwaves
US8497211B2 (en) 2011-06-24 2013-07-30 Applied Materials, Inc. Integrated process modulation for PSG gapfill
US8455292B2 (en) 2011-09-09 2013-06-04 International Business Machines Corporation Deposition of germanium film
EP2804755B1 (de) 2012-01-17 2019-06-19 Cardinal CG Company Beschichtungen mit geringer durchlässigkeit für sonnenlicht
US9385254B2 (en) 2012-04-17 2016-07-05 Hanergy Hi-Tech Power (Hk) Limited Integrated thin film solar cell interconnection
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9362433B2 (en) 2013-01-28 2016-06-07 Hanergy Hi-Tech Power (Hk) Limited Photovoltaic interconnect systems, devices, and methods
EP2937890B1 (de) 2014-04-22 2020-06-03 Europlasma nv Plasma-beschichtungsvorrichtung mit einem plasma-verteiler und verfahren zur vermeidung der entfärbung eines substrates
US9469566B2 (en) 2015-03-20 2016-10-18 Cardinal Cg Company Nickel-aluminum blocker film low-emissivity coatings
US9752377B2 (en) 2015-03-20 2017-09-05 Cardinal Cg Company Nickel-aluminum blocker film controlled transmission coating
US9745792B2 (en) 2015-03-20 2017-08-29 Cardinal Cg Company Nickel-aluminum blocker film multiple cavity controlled transmission coating
US11028012B2 (en) 2018-10-31 2021-06-08 Cardinal Cg Company Low solar heat gain coatings, laminated glass assemblies, and methods of producing same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340617A (en) * 1980-05-19 1982-07-20 Massachusetts Institute Of Technology Method and apparatus for depositing a material on a surface
JPH0635323B2 (ja) * 1982-06-25 1994-05-11 株式会社日立製作所 表面処理方法
US4504518A (en) * 1982-09-24 1985-03-12 Energy Conversion Devices, Inc. Method of making amorphous semiconductor alloys and devices using microwave energy
US4657777A (en) * 1984-12-17 1987-04-14 Canon Kabushiki Kaisha Formation of deposited film
JPH07101751B2 (ja) * 1985-03-28 1995-11-01 キヤノン株式会社 光起電力素子の製造方法
US4759993A (en) * 1985-04-25 1988-07-26 Ovonic Synthetic Materials Co., Inc. Plasma chemical vapor deposition SiO2-x coated articles and plasma assisted chemical vapor deposition method of applying the coating
JPS61256735A (ja) * 1985-05-10 1986-11-14 Nec Corp 半導体装置及びその製造方法

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