DE3751502D1 - Elektrische oder elektronische Anordnung mit einer dünnen Schicht aus Polyimid. - Google Patents
Elektrische oder elektronische Anordnung mit einer dünnen Schicht aus Polyimid.Info
- Publication number
- DE3751502D1 DE3751502D1 DE3751502T DE3751502T DE3751502D1 DE 3751502 D1 DE3751502 D1 DE 3751502D1 DE 3751502 T DE3751502 T DE 3751502T DE 3751502 T DE3751502 T DE 3751502T DE 3751502 D1 DE3751502 D1 DE 3751502D1
- Authority
- DE
- Germany
- Prior art keywords
- polyimide
- electrical
- electronic device
- thin layer
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004642 Polyimide Substances 0.000 title 1
- 229920001721 polyimide Polymers 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
- H01L21/02285—Langmuir-Blodgett techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3128—Organic layers, e.g. photoresist by Langmuir-Blodgett techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5408086 | 1986-03-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3751502D1 true DE3751502D1 (de) | 1995-10-12 |
DE3751502T2 DE3751502T2 (de) | 1996-02-15 |
Family
ID=12960632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3751502T Expired - Fee Related DE3751502T2 (de) | 1986-03-11 | 1987-03-10 | Elektrische oder elektronische Anordnung mit einer dünnen Schicht aus Polyimid. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5072262A (de) |
EP (1) | EP0237017B1 (de) |
JP (2) | JPS63124A (de) |
CA (1) | CA1256591A (de) |
DE (1) | DE3751502T2 (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1256592A (en) * | 1986-04-01 | 1989-06-27 | Masakazu Uekita | Electric-electronic device including polyimide thin film |
CA1294731C (en) * | 1986-04-25 | 1992-01-21 | Masakazu Uekita | Copolymeric and amphiphilic polyimide precursor, process for preparing the same and thin film |
US4783395A (en) * | 1987-02-17 | 1988-11-08 | Hoechst Celanese Corporation | Desensitizing solution for lithographic printing plates |
JPS6418760U (de) * | 1987-07-25 | 1989-01-30 | ||
JPH02140653A (ja) * | 1988-11-21 | 1990-05-30 | Kurabe:Kk | 湿度検知素子 |
DE4017905A1 (de) * | 1990-06-02 | 1991-12-05 | Basf Ag | Referenzelektrode fuer chemische sensoren |
JP2814024B2 (ja) * | 1990-06-07 | 1998-10-22 | キヤノン株式会社 | 液晶素子 |
US5329485A (en) * | 1990-11-01 | 1994-07-12 | Olympus Optical Co., Ltd. | Memory device |
JPH05283542A (ja) * | 1992-03-31 | 1993-10-29 | Mitsubishi Electric Corp | 半導体集積回路装置及びその製造方法 |
JP2709249B2 (ja) * | 1992-12-25 | 1998-02-04 | 川崎製鉄株式会社 | 圧延油供給装置 |
US5408381A (en) * | 1994-04-28 | 1995-04-18 | Johnson Service Company | Capacitance humidity sensor |
US6372534B1 (en) | 1995-06-06 | 2002-04-16 | Lg. Philips Lcd Co., Ltd | Method of making a TFT array with photo-imageable insulating layer over address lines |
DE19712233C2 (de) * | 1996-03-26 | 2003-12-11 | Lg Philips Lcd Co | Flüssigkristallanzeige und Herstellungsverfahren dafür |
US6224787B1 (en) * | 1997-03-10 | 2001-05-01 | Dai Nippon Printing Co., Ltd. | Liquid crystalline charge transport material |
JPH1173158A (ja) * | 1997-08-28 | 1999-03-16 | Seiko Epson Corp | 表示素子 |
US6551399B1 (en) * | 2000-01-10 | 2003-04-22 | Genus Inc. | Fully integrated process for MIM capacitors using atomic layer deposition |
TW507073B (en) * | 2000-03-31 | 2002-10-21 | Tdk Corp | Humidity sensor and method for making |
JP2002243689A (ja) * | 2001-02-15 | 2002-08-28 | Denso Corp | 容量式湿度センサおよびその製造方法 |
KR100428002B1 (ko) * | 2001-08-23 | 2004-04-30 | (주)그라쎌 | 유기 고분자 게이트 절연막을 구비하는 유기 반도체트랜지스터의 제조 방법 |
US6962756B2 (en) * | 2001-11-02 | 2005-11-08 | Mitsubishi Gas Chemical Company, Inc. | Transparent electrically-conductive film and its use |
EP2204861A1 (de) * | 2001-12-19 | 2010-07-07 | Merck Patent GmbH | Elektronische Geräte |
TW544752B (en) * | 2002-05-20 | 2003-08-01 | Univ Nat Yunlin Sci & Tech | Method for producing SnO2 gate ion sensitive field effect transistor (ISFET), and method and device for measuring the temperature parameters, drift and hysteresis values thereof |
US7296458B2 (en) * | 2002-10-17 | 2007-11-20 | Advanced Technology Materials, Inc | Nickel-coated free-standing silicon carbide structure for sensing fluoro or halogen species in semiconductor processing systems, and processes of making and using same |
US7228724B2 (en) * | 2002-10-17 | 2007-06-12 | Advanced Technology Materials, Inc. | Apparatus and process for sensing target gas species in semiconductor processing systems |
US7080545B2 (en) * | 2002-10-17 | 2006-07-25 | Advanced Technology Materials, Inc. | Apparatus and process for sensing fluoro species in semiconductor processing systems |
US20060211253A1 (en) * | 2005-03-16 | 2006-09-21 | Ing-Shin Chen | Method and apparatus for monitoring plasma conditions in an etching plasma processing facility |
TWI306882B (en) * | 2006-05-25 | 2009-03-01 | Ind Tech Res Inst | Thermoplastic polyimide composition and method of making double-sided flexible copper clad laminate using the same |
JP2008072087A (ja) * | 2006-08-16 | 2008-03-27 | Kyoto Univ | 半導体装置および半導体装置の製造方法、ならびに表示装置 |
JP4899033B2 (ja) * | 2007-04-04 | 2012-03-21 | 株式会社やまびこ | 送風作業機及び送風機のケーシング |
EP2027459B1 (de) * | 2007-04-05 | 2012-12-26 | Micronas GmbH | Feuchtesensor und verfahren zum messen der feuchte eines gasförmigen mediums |
TWI410625B (zh) * | 2008-12-31 | 2013-10-01 | Ind Tech Res Inst | 氣體感測材料及包含其之氣體感測器 |
US9134270B2 (en) * | 2010-03-25 | 2015-09-15 | Stichting Imec Nederland | Amorphous thin film for sensing |
US8710615B2 (en) * | 2011-08-31 | 2014-04-29 | Infineon Technologies Ag | Semiconductor device with an amorphous semi-insulating layer, temperature sensor, and method of manufacturing a semiconductor device |
JP6536592B2 (ja) * | 2015-02-05 | 2019-07-03 | 富士通株式会社 | ガスセンサ及びセンサ装置 |
CN107430086B (zh) | 2015-03-10 | 2020-03-06 | 富士通株式会社 | 气体传感器以及传感器装置 |
DE102016204308A1 (de) * | 2016-03-16 | 2017-09-21 | Continental Automotive Gmbh | Piezoelektrisches Aktuatorbauelement und Herstellungsverfahren zum Herstellen eines piezoelektrischen Aktuatorbauelementes |
JP6770238B2 (ja) * | 2017-03-31 | 2020-10-14 | ミツミ電機株式会社 | 湿度センサ |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1572181A (en) * | 1975-08-18 | 1980-07-23 | Ici Ltd | Device comprising a thin film of organic materila |
JPS5952822B2 (ja) * | 1978-04-14 | 1984-12-21 | 東レ株式会社 | 耐熱性感光材料 |
JPS5839437B2 (ja) * | 1978-08-24 | 1983-08-30 | 岩崎通信機株式会社 | ボタン電話装置における本電話機接続方式 |
JPS60157354A (ja) | 1984-01-26 | 1985-08-17 | Matsushita Electric Ind Co Ltd | 通信制御装置 |
JPS60197730A (ja) * | 1984-03-21 | 1985-10-07 | Ulvac Corp | ポリイミド膜の形成方法 |
JPS60211836A (ja) * | 1984-04-06 | 1985-10-24 | Canon Inc | パタ−ン形成方法 |
US4642665A (en) * | 1984-12-19 | 1987-02-10 | Eaton Corporation | Vertically layered MOMOM tunnel device |
JPS62143929A (ja) * | 1985-07-16 | 1987-06-27 | Kanegafuchi Chem Ind Co Ltd | ポリイミド前駆体薄膜 |
CA1256592A (en) * | 1986-04-01 | 1989-06-27 | Masakazu Uekita | Electric-electronic device including polyimide thin film |
US4719281A (en) * | 1986-04-21 | 1988-01-12 | Hoechst Celanese Corporation | Pendant quinodimethane-containing polymer |
CA1302675C (en) * | 1986-05-20 | 1992-06-09 | Masakazu Uekita | Thin film and device having the same |
-
1987
- 1987-03-10 EP EP87103403A patent/EP0237017B1/de not_active Expired - Lifetime
- 1987-03-10 DE DE3751502T patent/DE3751502T2/de not_active Expired - Fee Related
- 1987-03-11 CA CA000531714A patent/CA1256591A/en not_active Expired
- 1987-03-11 JP JP62056200A patent/JPS63124A/ja active Pending
- 1987-03-11 JP JP62056201A patent/JPH0693508B2/ja not_active Expired - Lifetime
-
1989
- 1989-10-10 US US07/418,618 patent/US5072262A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPS6312172A (ja) | 1988-01-19 |
JPH0693508B2 (ja) | 1994-11-16 |
EP0237017A3 (en) | 1990-03-28 |
DE3751502T2 (de) | 1996-02-15 |
US5072262A (en) | 1991-12-10 |
JPS63124A (ja) | 1988-01-05 |
EP0237017A2 (de) | 1987-09-16 |
CA1256591A (en) | 1989-06-27 |
EP0237017B1 (de) | 1995-09-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |