DE3751920D1 - Isolationsverfahren für integrierte Schaltungen - Google Patents
Isolationsverfahren für integrierte SchaltungenInfo
- Publication number
- DE3751920D1 DE3751920D1 DE3751920T DE3751920T DE3751920D1 DE 3751920 D1 DE3751920 D1 DE 3751920D1 DE 3751920 T DE3751920 T DE 3751920T DE 3751920 T DE3751920 T DE 3751920T DE 3751920 D1 DE3751920 D1 DE 3751920D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuits
- isolation process
- isolation
- circuits
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
- H01L21/76235—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/882,732 US4842675A (en) | 1986-07-07 | 1986-07-07 | Integrated circuit isolation process |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3751920D1 true DE3751920D1 (de) | 1996-11-14 |
DE3751920T2 DE3751920T2 (de) | 1997-02-13 |
Family
ID=25381230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3751920T Expired - Lifetime DE3751920T2 (de) | 1986-07-07 | 1987-07-03 | Isolationsverfahren für integrierte Schaltungen |
Country Status (6)
Country | Link |
---|---|
US (1) | US4842675A (de) |
EP (1) | EP0252450B1 (de) |
JP (1) | JPS6340337A (de) |
KR (1) | KR960016502B1 (de) |
CN (1) | CN1013160B (de) |
DE (1) | DE3751920T2 (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4847672A (en) * | 1988-02-29 | 1989-07-11 | Fairchild Semiconductor Corporation | Integrated circuit die with resistive substrate isolation of multiple circuits |
US4942449A (en) * | 1988-03-28 | 1990-07-17 | General Electric Company | Fabrication method and structure for field isolation in field effect transistors on integrated circuit chips |
IT1236994B (it) * | 1989-12-29 | 1993-05-12 | Sgs Thomson Microelectronics | Processo per la fabbricazione di dispositivi semiconduttori mos di potenza e dispositivi con esso ottenuti |
JP2641781B2 (ja) * | 1990-02-23 | 1997-08-20 | シャープ株式会社 | 半導体素子分離領域の形成方法 |
US5094972A (en) * | 1990-06-14 | 1992-03-10 | National Semiconductor Corp. | Means of planarizing integrated circuits with fully recessed isolation dielectric |
US5192706A (en) * | 1990-08-30 | 1993-03-09 | Texas Instruments Incorporated | Method for semiconductor isolation |
US5130268A (en) * | 1991-04-05 | 1992-07-14 | Sgs-Thomson Microelectronics, Inc. | Method for forming planarized shallow trench isolation in an integrated circuit and a structure formed thereby |
US5310692A (en) * | 1992-05-29 | 1994-05-10 | Sgs-Thomson Microelectronics, Inc. | Method of forming a MOSFET structure with planar surface |
US5290718A (en) * | 1992-06-29 | 1994-03-01 | National Semiconductor Corporation | Simplified high reliability gate oxide process |
US5264387A (en) * | 1992-10-27 | 1993-11-23 | International Business Machines Corporation | Method of forming uniformly thin, isolated silicon mesas on an insulating substrate |
US6310384B1 (en) | 1993-07-02 | 2001-10-30 | Hitachi, Ltd. | Low stress semiconductor devices with thermal oxide isolation |
DE4340226C2 (de) * | 1993-11-25 | 2002-03-14 | Gold Star Electronics | Bauelement mit Isolationsbereichsstruktur und Verfahren zum Herstellen desselben |
US6034410A (en) * | 1994-01-14 | 2000-03-07 | Stmicroelectronics, Inc. | MOSFET structure with planar surface |
US5459096A (en) * | 1994-07-05 | 1995-10-17 | Motorola Inc. | Process for fabricating a semiconductor device using dual planarization layers |
KR0176153B1 (ko) * | 1995-05-30 | 1999-04-15 | 김광호 | 반도체 장치의 소자분리막 및 그 형성방법 |
US6008526A (en) * | 1995-05-30 | 1999-12-28 | Samsung Electronics Co., Ltd. | Device isolation layer for a semiconductor device |
KR0186083B1 (ko) * | 1995-08-12 | 1999-04-15 | 문정환 | 반도체 소자의 소자격리방법 |
JP2762973B2 (ja) * | 1995-11-30 | 1998-06-11 | 日本電気株式会社 | 半導体装置の製造方法 |
KR980006053A (ko) * | 1996-06-26 | 1998-03-30 | 문정환 | 반도체장치의 격리막 형성방법 |
US5834360A (en) * | 1996-07-31 | 1998-11-10 | Stmicroelectronics, Inc. | Method of forming an improved planar isolation structure in an integrated circuit |
JP2891205B2 (ja) * | 1996-10-21 | 1999-05-17 | 日本電気株式会社 | 半導体集積回路の製造方法 |
JPH10144785A (ja) * | 1996-11-06 | 1998-05-29 | Samsung Electron Co Ltd | 半導体装置及びその素子分離方法 |
KR100226488B1 (ko) * | 1996-12-26 | 1999-10-15 | 김영환 | 반도체 소자 격리구조 및 그 형성방법 |
JP3547279B2 (ja) * | 1997-02-18 | 2004-07-28 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US5728621A (en) * | 1997-04-28 | 1998-03-17 | Chartered Semiconductor Manufacturing Pte Ltd | Method for shallow trench isolation |
US5783476A (en) * | 1997-06-26 | 1998-07-21 | Siemens Aktiengesellschaft | Integrated circuit devices including shallow trench isolation |
KR100444315B1 (ko) * | 1997-06-28 | 2004-11-09 | 주식회사 하이닉스반도체 | 반도체소자의소자분리막형성방법 |
US5834359A (en) * | 1997-08-29 | 1998-11-10 | Vanguard International Semiconductor Corporation | Method of forming an isolation region in a semiconductor substrate |
US5976950A (en) * | 1997-11-13 | 1999-11-02 | National Semiconductor Corporation | Polysilicon coated swami (sidewall masked isolation) |
US6118167A (en) * | 1997-11-13 | 2000-09-12 | National Semiconductor Corporation | Polysilicon coated nitride-lined shallow trench |
US6228746B1 (en) * | 1997-12-18 | 2001-05-08 | Advanced Micro Devices, Inc. | Methodology for achieving dual field oxide thicknesses |
US5998280A (en) * | 1998-03-20 | 1999-12-07 | National Semiconductor Corporation | Modified recessed locos isolation process for deep sub-micron device processes |
US6087214A (en) * | 1998-04-29 | 2000-07-11 | Vlsi Technology, Inc. | Arrangement and method for DRAM cell using shallow trench isolation |
US6127215A (en) * | 1998-10-29 | 2000-10-03 | International Business Machines Corp. | Deep pivot mask for enhanced buried-channel PFET performance and reliability |
US6060348A (en) * | 1998-11-02 | 2000-05-09 | Vanguard International Semiconducter Corporation | Method to fabricate isolation by combining locos and shallow trench isolation for ULSI technology |
JP3751469B2 (ja) * | 1999-04-26 | 2006-03-01 | 沖電気工業株式会社 | Soi構造の半導体装置の製造方法 |
US6300220B1 (en) * | 2000-01-06 | 2001-10-09 | National Semiconductor Corporation | Process for fabricating isolation structure for IC featuring grown and buried field oxide |
US6727161B2 (en) | 2000-02-16 | 2004-04-27 | Cypress Semiconductor Corp. | Isolation technology for submicron semiconductor devices |
US20070281403A1 (en) * | 2006-06-01 | 2007-12-06 | Mon-Chin Tsai | Method of enhancing gate lithography performance by polysilicon chemical-mechanical polishing |
US20140272684A1 (en) * | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
US9632411B2 (en) | 2013-03-14 | 2017-04-25 | Applied Materials, Inc. | Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor |
US9354508B2 (en) | 2013-03-12 | 2016-05-31 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
CN107700106A (zh) * | 2017-11-20 | 2018-02-16 | 广州市番禺区沙湾同心机器厂 | 一种洗染设备及其滚筒结构 |
US10529812B1 (en) * | 2018-10-10 | 2020-01-07 | Texas Instruments Incorporated | Locos with sidewall spacer for transistors and other devices |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4222792A (en) * | 1979-09-10 | 1980-09-16 | International Business Machines Corporation | Planar deep oxide isolation process utilizing resin glass and E-beam exposure |
US4508757A (en) * | 1982-12-20 | 1985-04-02 | International Business Machines Corporation | Method of manufacturing a minimum bird's beak recessed oxide isolation structure |
JPS59124141A (ja) * | 1982-12-28 | 1984-07-18 | Toshiba Corp | 半導体装置の製造方法 |
JPS59125638A (ja) * | 1983-01-05 | 1984-07-20 | Nec Corp | 半導体素子分離の製造方法 |
US4604162A (en) * | 1983-06-13 | 1986-08-05 | Ncr Corporation | Formation and planarization of silicon-on-insulator structures |
US4580330A (en) * | 1984-06-15 | 1986-04-08 | Texas Instruments Incorporated | Integrated circuit isolation |
JPS618945A (ja) * | 1984-06-25 | 1986-01-16 | Nec Corp | 半導体集積回路装置 |
US4571819A (en) * | 1984-11-01 | 1986-02-25 | Ncr Corporation | Method for forming trench isolation structures |
-
1986
- 1986-07-07 US US06/882,732 patent/US4842675A/en not_active Expired - Lifetime
-
1987
- 1987-07-03 CN CN87104640A patent/CN1013160B/zh not_active Expired
- 1987-07-03 EP EP87109601A patent/EP0252450B1/de not_active Expired - Lifetime
- 1987-07-03 DE DE3751920T patent/DE3751920T2/de not_active Expired - Lifetime
- 1987-07-06 JP JP62168506A patent/JPS6340337A/ja active Pending
- 1987-07-07 KR KR1019870007238A patent/KR960016502B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0252450A3 (de) | 1989-10-25 |
CN1013160B (zh) | 1991-07-10 |
CN87104640A (zh) | 1988-01-27 |
EP0252450A2 (de) | 1988-01-13 |
JPS6340337A (ja) | 1988-02-20 |
DE3751920T2 (de) | 1997-02-13 |
EP0252450B1 (de) | 1996-10-09 |
KR880002255A (ko) | 1988-04-30 |
KR960016502B1 (ko) | 1996-12-12 |
US4842675A (en) | 1989-06-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |