DE3752221D1 - Photoelektrischer Wandler - Google Patents

Photoelektrischer Wandler

Info

Publication number
DE3752221D1
DE3752221D1 DE3752221T DE3752221T DE3752221D1 DE 3752221 D1 DE3752221 D1 DE 3752221D1 DE 3752221 T DE3752221 T DE 3752221T DE 3752221 T DE3752221 T DE 3752221T DE 3752221 D1 DE3752221 D1 DE 3752221D1
Authority
DE
Germany
Prior art keywords
electrode region
conductivity type
main electrode
accumulation
setting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3752221T
Other languages
English (en)
Other versions
DE3752221T2 (de
Inventor
Nobuyoshi Tanaka
Yoshio Nakamura
Shigetoshi Sugawa
Hayao Ohzu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3752221D1 publication Critical patent/DE3752221D1/de
Application granted granted Critical
Publication of DE3752221T2 publication Critical patent/DE3752221T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/1581Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation using linear image-sensor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14681Bipolar transistor imagers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/701Line sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795Circuitry for generating timing or clock signals
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/1506Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements
    • H04N3/1512Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements for MOS image-sensors, e.g. MOS-CCD
DE3752221T 1986-07-17 1987-07-17 Photoelektrischer Wandler Expired - Fee Related DE3752221T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61168286A JPH0644619B2 (ja) 1986-07-17 1986-07-17 光電変換装置

Publications (2)

Publication Number Publication Date
DE3752221D1 true DE3752221D1 (de) 1998-11-12
DE3752221T2 DE3752221T2 (de) 1999-03-25

Family

ID=15865204

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3752221T Expired - Fee Related DE3752221T2 (de) 1986-07-17 1987-07-17 Photoelektrischer Wandler

Country Status (7)

Country Link
US (1) US4810896A (de)
EP (1) EP0253678B1 (de)
JP (1) JPH0644619B2 (de)
AT (1) ATE172056T1 (de)
CA (1) CA1278079C (de)
DE (1) DE3752221T2 (de)
ES (1) ES2120941T3 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4866293A (en) * 1986-12-09 1989-09-12 Canon Kabushiki Kaisha Photoelectric converting apparatus to prevent the outflow of excess carriers
JPS63206069A (ja) * 1987-02-23 1988-08-25 Fuji Photo Film Co Ltd イメ−ジ・センサ
US4942474A (en) * 1987-12-11 1990-07-17 Hitachi, Ltd. Solid-state imaging device having photo-electric conversion elements and other circuit elements arranged to provide improved photo-sensitivity
JP2990435B2 (ja) * 1988-02-02 1999-12-13 セイコーインスツルメンツ株式会社 イメージセンサー
US5262850A (en) * 1988-09-20 1993-11-16 Canon Kabushiki Kaisha Photoelectric converting device having reduced line sensor space
US5262870A (en) * 1989-02-10 1993-11-16 Canon Kabushiki Kaisha Image sensor in which reading and resetting are simultaneously performed
DE69009787T2 (de) * 1989-02-10 1994-11-10 Canon Kk Bildsensor und photoelektrisches Umwandlungsgerät zur Anwendung desselben.
US5272345A (en) * 1989-09-22 1993-12-21 Ada Technologies, Inc. Calibration method and apparatus for measuring the concentration of components in a fluid
JP2810526B2 (ja) * 1989-11-21 1998-10-15 キヤノン株式会社 光電変換装置及び該装置を搭載した装置
US5241169A (en) * 1989-11-21 1993-08-31 Canon Kabushiki Kaisha Photoelectric conversion device having an improved control electrode structure and apparatus equipped with same
US5260560A (en) * 1990-03-02 1993-11-09 Canon Kabushiki Kaisha Photoelectric transfer device
EP0458460B1 (de) * 1990-04-23 1999-06-23 Canon Kabushiki Kaisha Photoelektrische Wandlungsvorrichtung
DE69133418T2 (de) * 1990-08-07 2005-08-18 Canon K.K. Photoumwandlerschaltung
US5288988A (en) * 1990-08-07 1994-02-22 Canon Kabushiki Kaisha Photoconversion device having reset control circuitry
JPH04100383A (ja) * 1990-08-18 1992-04-02 Seiko Instr Inc 固体撮像素子
JP3050583B2 (ja) * 1990-10-17 2000-06-12 ソニー株式会社 固体撮像装置
US5262873A (en) 1990-11-07 1993-11-16 Canon Kabushiki Kaisha Image signal correcting in image data processing requiring only small memory capacity
US5281803A (en) * 1990-11-26 1994-01-25 Canon Kabushiki Kaisha Image sensor and information processing apparatus
CA2056087C (en) * 1990-11-27 1998-01-27 Masakazu Morishita Photoelectric converting device and information processing apparatus employing the same
JP2662105B2 (ja) * 1991-04-08 1997-10-08 キヤノン株式会社 密着型センサおよびイメージスキャナならびにファクシミリ
JP2768453B2 (ja) 1992-03-03 1998-06-25 キヤノン株式会社 固体撮像装置及びそれを用いた装置
US5406332A (en) * 1992-03-06 1995-04-11 Canon Kabushiki Kaisha Photoelectric converting device
JPH05335615A (ja) * 1992-05-27 1993-12-17 Canon Inc 光電変換装置
EP0573984B1 (de) * 1992-06-11 1999-04-14 Canon Kabushiki Kaisha Kontaktbildsensor, Verfahren zur dessen Herstellung und Informationsverarbeitungsgerät
US5453611A (en) * 1993-01-01 1995-09-26 Canon Kabushiki Kaisha Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip
DE69418754T2 (de) * 1993-03-15 1999-11-04 Canon Kk Signalprozessor
US5838176A (en) * 1996-07-11 1998-11-17 Foveonics, Inc. Correlated double sampling circuit
TW421962B (en) 1997-09-29 2001-02-11 Canon Kk Image sensing device using mos type image sensing elements
JP3467013B2 (ja) 1999-12-06 2003-11-17 キヤノン株式会社 固体撮像装置
WO2002027763A2 (en) 2000-09-25 2002-04-04 Foveon, Inc. Active pixel sensor with noise cancellation
US6950131B1 (en) 2000-09-26 2005-09-27 Valley Oak Semiconductor Simultaneous access and reset system for an active pixel sensor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5528456B2 (de) * 1972-11-08 1980-07-28
JPS55105480A (en) * 1979-02-07 1980-08-13 Hitachi Ltd Solid state pickup device
JPS5850030B2 (ja) * 1979-03-08 1983-11-08 日本放送協会 光電変換装置およびそれを用いた固体撮像板
US4445117A (en) * 1981-12-28 1984-04-24 Hughes Aircraft Company Transistorized focal plane having floating gate output nodes
JPS59107569A (ja) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd 一次元半導体撮像装置
JPH0744661B2 (ja) * 1982-12-14 1995-05-15 オリンパス光学工業株式会社 固体撮像装置
JPS59108476A (ja) * 1982-12-14 1984-06-22 Junichi Nishizawa 2次元固体撮像装置及びその読出し方法
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
JPS61157184A (ja) * 1984-12-28 1986-07-16 Canon Inc 光電変換装置

Also Published As

Publication number Publication date
ES2120941T3 (es) 1998-11-16
CA1278079C (en) 1990-12-18
JPS6324664A (ja) 1988-02-02
EP0253678B1 (de) 1998-10-07
ATE172056T1 (de) 1998-10-15
EP0253678A3 (de) 1988-06-01
EP0253678A2 (de) 1988-01-20
US4810896A (en) 1989-03-07
DE3752221T2 (de) 1999-03-25
JPH0644619B2 (ja) 1994-06-08

Similar Documents

Publication Publication Date Title
ATE172056T1 (de) Photoelektrischer wandler
GB2029096B (en) Semiconductor devices
DE3786363T2 (de) Halbleiteranordnungen mit hoher Beweglichkeit.
SE8003729L (sv) Vmos/bipoler effektomkopplingsanordning
DE3784191D1 (de) Halbleiterphotodetektor mit schottky-uebergang.
EP0274236A3 (de) Photoelektrischer Wandler
DE3685629D1 (de) Integrierte geschaltete uebertragungsschaltung.
DE3581045D1 (de) "latch-up"-freie komplementaere halbleiteranordnung mit hoher schaltgeschwindigkeit.
JPS52131449A (en) Semiconductor switch circuit
DE3583113D1 (de) Integrierte halbleiterschaltungsanordnung in polycell-technik.
DE3581159D1 (de) Halbleiteranordnung mit integrierter schaltung.
KR860005442A (ko) 신호입력부를 갖는 반도체장치
DE3850445D1 (de) Integrierter Halbleiterschaltkreis mit reduziertem Energieverbrauch.
JPS52155984A (en) Charge transfer device
DE3779579D1 (de) Modul mit halbleiter-leistungsschaltelementen.
DE3581842D1 (de) Integrierte halbleiterschaltung mit komplementaeren feldeffekttransistoren.
JPS54121088A (en) 2-dimensional charge-coupled semiconductor device
JPS5648720A (en) Inductive load driving circuit
GB2001472A (en) Integrated circuit devices including a structure for crossing information signals
JPS55136724A (en) Logic circuit device
CS180417B1 (en) Limit collector voltage transistor maximum utilization circuit for inductive loads switching
JPS5397357A (en) Driving circuit by transistor
JPS53147476A (en) Semiconductor device
JPS52154382A (en) Semiconductor integrated circuit
JPS5427783A (en) Semiconductor device

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee