DE3752259D1 - Bromine-Ätzverfahren für Silizium - Google Patents

Bromine-Ätzverfahren für Silizium

Info

Publication number
DE3752259D1
DE3752259D1 DE3752259T DE3752259T DE3752259D1 DE 3752259 D1 DE3752259 D1 DE 3752259D1 DE 3752259 T DE3752259 T DE 3752259T DE 3752259 T DE3752259 T DE 3752259T DE 3752259 D1 DE3752259 D1 DE 3752259D1
Authority
DE
Germany
Prior art keywords
silicon
etching process
gas chemistry
iodide gas
bromine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3752259T
Other languages
English (en)
Other versions
DE3752259T2 (de
Inventor
Jerry Yuen Kui Wong
Mei Chang
Dan Maydan
David Nin-Kou Wang
Alfred W S Mak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25481506&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3752259(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE3752259D1 publication Critical patent/DE3752259D1/de
Publication of DE3752259T2 publication Critical patent/DE3752259T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
DE3752259T 1986-12-19 1987-12-18 Bromine-Ätzverfahren für Silizium Expired - Fee Related DE3752259T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94449186A 1986-12-19 1986-12-19

Publications (2)

Publication Number Publication Date
DE3752259D1 true DE3752259D1 (de) 1999-04-22
DE3752259T2 DE3752259T2 (de) 1999-10-14

Family

ID=25481506

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3752259T Expired - Fee Related DE3752259T2 (de) 1986-12-19 1987-12-18 Bromine-Ätzverfahren für Silizium

Country Status (5)

Country Link
US (2) US5874362A (de)
EP (2) EP0272143B1 (de)
JP (1) JPH0793291B2 (de)
AT (1) ATE177877T1 (de)
DE (1) DE3752259T2 (de)

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US5188704A (en) * 1989-10-20 1993-02-23 International Business Machines Corporation Selective silicon nitride plasma etching
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JP3127454B2 (ja) * 1990-08-08 2001-01-22 ソニー株式会社 シリコン系被エッチング材のエッチング方法
JP3729869B2 (ja) * 1990-09-28 2005-12-21 セイコーエプソン株式会社 半導体装置の製造方法
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Also Published As

Publication number Publication date
DE3752259T2 (de) 1999-10-14
EP0565212A3 (de) 1994-01-26
JPS63278339A (ja) 1988-11-16
ATE177877T1 (de) 1999-04-15
US5874362A (en) 1999-02-23
EP0565212A2 (de) 1993-10-13
US6020270A (en) 2000-02-01
JPH0793291B2 (ja) 1995-10-09
EP0272143B1 (de) 1999-03-17
EP0272143A3 (de) 1990-09-05
EP0272143A2 (de) 1988-06-22

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