DE3777742D1 - Verfahren zum herstellen einer ladungsgekoppelten anordnung (ccd) mit die richtung der ladungsuebertragung beeinflussenden implantierten bereichen. - Google Patents

Verfahren zum herstellen einer ladungsgekoppelten anordnung (ccd) mit die richtung der ladungsuebertragung beeinflussenden implantierten bereichen.

Info

Publication number
DE3777742D1
DE3777742D1 DE8787113724T DE3777742T DE3777742D1 DE 3777742 D1 DE3777742 D1 DE 3777742D1 DE 8787113724 T DE8787113724 T DE 8787113724T DE 3777742 T DE3777742 T DE 3777742T DE 3777742 D1 DE3777742 D1 DE 3777742D1
Authority
DE
Germany
Prior art keywords
ccd
producing
charge transfer
coupling arrangement
implanted areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787113724T
Other languages
English (en)
Inventor
Gilbert Allan Eastman Hawkins
Robert Leroy Eastman K Nielsen
David Lawrence Eastman K Losee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of DE3777742D1 publication Critical patent/DE3777742D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946—Charge transfer devices
    • H01L29/66954—Charge transfer devices with an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD
DE8787113724T 1986-10-07 1987-09-20 Verfahren zum herstellen einer ladungsgekoppelten anordnung (ccd) mit die richtung der ladungsuebertragung beeinflussenden implantierten bereichen. Expired - Fee Related DE3777742D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/916,259 US4746622A (en) 1986-10-07 1986-10-07 Process for preparing a charge coupled device with charge transfer direction biasing implants

Publications (1)

Publication Number Publication Date
DE3777742D1 true DE3777742D1 (de) 1992-04-30

Family

ID=25436956

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787113724T Expired - Fee Related DE3777742D1 (de) 1986-10-07 1987-09-20 Verfahren zum herstellen einer ladungsgekoppelten anordnung (ccd) mit die richtung der ladungsuebertragung beeinflussenden implantierten bereichen.

Country Status (5)

Country Link
US (1) US4746622A (de)
EP (1) EP0263341B1 (de)
JP (1) JPS6398150A (de)
CA (1) CA1277444C (de)
DE (1) DE3777742D1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4900688A (en) * 1987-06-25 1990-02-13 The United States Of America As Represented By The Secretary Of The Air Force Pseudo uniphase charge coupled device fabrication by self-aligned virtual barrier and virtual gate formation
US5114833A (en) * 1988-08-29 1992-05-19 Eastman Kodak Company Charge-coupled device and process of making the device
US5139606A (en) * 1989-12-05 1992-08-18 Massachusetts Institute Of Technology Laser bilayer etching of GaAs surfaces
US4992392A (en) * 1989-12-28 1991-02-12 Eastman Kodak Company Method of making a virtual phase CCD
JPH03245504A (ja) * 1990-02-23 1991-11-01 Sumitomo Heavy Ind Ltd 臨界磁場測定装置用磁石
KR920010433B1 (ko) * 1990-07-10 1992-11-27 금성일렉트론 주식회사 자기정렬 방식에 의한 전하 촬상소자의 제조방법
EP0492144A3 (en) * 1990-11-26 1992-08-12 Matsushita Electronics Corporation Charge-coupled device and solid-state imaging device
US5466612A (en) * 1992-03-11 1995-11-14 Matsushita Electronics Corp. Method of manufacturing a solid-state image pickup device
US5210049A (en) * 1992-04-28 1993-05-11 Eastman Kodak Company Method of making a solid state image sensor
US5298448A (en) * 1992-12-18 1994-03-29 Eastman Kodak Company Method of making two-phase buried channel planar gate CCD
US5292682A (en) * 1993-07-06 1994-03-08 Eastman Kodak Company Method of making two-phase charge coupled device
US5516716A (en) * 1994-12-02 1996-05-14 Eastman Kodak Company Method of making a charge coupled device with edge aligned implants and electrodes
US5556801A (en) * 1995-01-23 1996-09-17 Eastman Kodak Company Method of making a planar charge coupled device with edge aligned implants and interconnected electrodes
US5719075A (en) * 1995-07-31 1998-02-17 Eastman Kodak Company Method of making a planar charge coupled device with edge aligned implants and electrodes connected with overlying metal
US6174824B1 (en) 1999-03-04 2001-01-16 International Business Machines Corporation Post-processing a completed semiconductor device
US6489246B1 (en) * 2001-05-01 2002-12-03 Eastman Kodak Company Method for manufacturing charge-coupled image sensors
EP1367650A1 (de) * 2002-05-27 2003-12-03 STMicroelectronics S.A. Elektronische Vorrichtung mit elektronischen Schaltungen und einer photosensitiven Zone und deren Verfahren zur Herstellung
US20060014151A1 (en) * 2002-12-25 2006-01-19 Jun Ogura Optical dna sensor, dna reading apparatus, identification method of dna and manufacturing method of optical dna sensor
US20040149959A1 (en) * 2003-01-31 2004-08-05 Mikhael Michael G. Conductive flakes manufactured by combined sputtering and vapor deposition
GB0330134D0 (en) * 2003-12-30 2004-02-04 Univ Liverpool Charge coupled device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3651349A (en) * 1970-02-16 1972-03-21 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3700932A (en) * 1970-02-16 1972-10-24 Bell Telephone Labor Inc Charge coupled devices
US4347656A (en) * 1970-10-29 1982-09-07 Bell Telephone Laboratories, Incorporated Method of fabricating polysilicon electrodes
US3789267A (en) * 1971-06-28 1974-01-29 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US4290187A (en) * 1973-10-12 1981-09-22 Siemens Aktiengesellschaft Method of making charge-coupled arrangement in the two-phase technique
US3927468A (en) * 1973-12-28 1975-12-23 Fairchild Camera Instr Co Self aligned CCD element fabrication method therefor
US3911560A (en) * 1974-02-25 1975-10-14 Fairchild Camera Instr Co Method for manufacturing a semiconductor device having self-aligned implanted barriers with narrow gaps between electrodes
US4047215A (en) * 1975-01-31 1977-09-06 Texas Instruments Incorporated Uniphase charge coupled devices
US4035906A (en) * 1975-07-23 1977-07-19 Texas Instruments Incorporated Silicon gate CCD structure
FR2353957A1 (fr) * 1976-06-04 1977-12-30 Thomson Csf Procede de fabrication d'un dispositif semi-conducteur a transfert de charge a deux phases, et dispositif obtenu par ce procede
JPS5849035B2 (ja) * 1976-08-16 1983-11-01 株式会社東芝 電荷転送素子
US4365261A (en) * 1977-08-26 1982-12-21 Texas Instruments Incorporated Co-planar barrier-type charge coupled device with enhanced storage capacity and decreased leakage current
US4229752A (en) * 1978-05-16 1980-10-21 Texas Instruments Incorporated Virtual phase charge transfer device
US4273596A (en) * 1978-10-03 1981-06-16 The United States Of America As Represented By The Secretary Of The Army Method of preparing a monolithic intrinsic infrared focal plane charge coupled device imager
US4377904A (en) * 1978-10-10 1983-03-29 Texas Instruments Incorporated Method of fabricating a narrow band-gap semiconductor CCD imaging device
US4319261A (en) * 1980-05-08 1982-03-09 Westinghouse Electric Corp. Self-aligned, field aiding double polysilicon CCD electrode structure
NL8004328A (nl) * 1980-07-29 1982-03-01 Philips Nv Schakelinrichting voor het ontladen van een capaciteit.
US4613402A (en) * 1985-07-01 1986-09-23 Eastman Kodak Company Method of making edge-aligned implants and electrodes therefor

Also Published As

Publication number Publication date
EP0263341A3 (en) 1988-08-17
JPS6398150A (ja) 1988-04-28
EP0263341A2 (de) 1988-04-13
EP0263341B1 (de) 1992-03-25
CA1277444C (en) 1990-12-04
US4746622A (en) 1988-05-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee