DE3778408D1 - Halbleiterspeicheranordnung. - Google Patents

Halbleiterspeicheranordnung.

Info

Publication number: DE3778408D1
Authority: DE; Germany
Prior art keywords: semiconductor memory; memory arrangement; arrangement; semiconductor; memory
Prior art date: 1986-01-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE8787300484T

Other languages

English (en)

Inventor

Kiyohiro C O Mitsubis Furutani

Kazutami C O Mitsubish Arimoto

Koichiro C O Mitsubish Mashiko

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Mitsubishi Electric Corp

Original Assignee

Mitsubishi Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-01-30

Filing date

1987-01-21

Publication date

1992-05-27

1987-01-21 Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp

1992-05-27 Application granted granted Critical

1992-05-27 Publication of DE3778408D1 publication Critical patent/DE3778408D1/de

2007-01-22 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out

DE8787300484T 1986-01-30 1987-01-21 Halbleiterspeicheranordnung. Expired - Fee Related DE3778408D1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP61020614A JPH0766659B2 (ja)	1986-01-30	1986-01-30	半導体記憶装置

Publications (1)

Publication Number	Publication Date
DE3778408D1 true DE3778408D1 (de)	1992-05-27

Family

ID=12032131

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8787300484T Expired - Fee Related DE3778408D1 (de)	1986-01-30	1987-01-21	Halbleiterspeicheranordnung.

Country Status (4)

Country	Link
US (1)	US4710789A (de)
EP (1)	EP0239187B1 (de)
JP (1)	JPH0766659B2 (de)
DE (1)	DE3778408D1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0783062B2 (ja) *	1985-06-18	1995-09-06	株式会社東芝	マスタ−スライス型半導体装置
JPS62202397A (ja) *	1986-02-28	1987-09-07	Fujitsu Ltd	半導体記憶装置
JPS63245954A (ja) *	1987-04-01	1988-10-13	Hitachi Ltd	半導体メモリ
JPH01129440A (ja) *	1987-11-14	1989-05-22	Fujitsu Ltd	半導体装置
JPH07109878B2 (ja) *	1988-11-16	1995-11-22	株式会社東芝	半導体記憶装置
KR910009444B1 (ko) *	1988-12-20	1991-11-16	삼성전자 주식회사	반도체 메모리 장치
US5604881A (en) *	1988-12-22	1997-02-18	Framdrive	Ferroelectric storage device emulating a rotating disk drive unit in a computer system and having a multiplexed optical data interface
US5592646A (en) *	1988-12-22	1997-01-07	Framdrive	Ferroelectric storage device emulating a rotating disk drive unit in a computer system and having a parallel and multiplexed optical data interface
US5592645A (en) *	1988-12-22	1997-01-07	Framdrive	Ferroelectric storage device emulating a rotating disk drive unit in a computer system and having a frequency modulated (FM) data interface
US5592644A (en) *	1988-12-22	1997-01-07	Framdrive	Ferroelectric storage device emulating a rotating disk drive unit in a computer system and having an optical data interface
US5592642A (en) *	1988-12-22	1997-01-07	Framdrive	Ferroelectric storage device emulating a rotating disk drive unit in a computer system and having an optical and parallel data interface
US5592643A (en) *	1988-12-22	1997-01-07	Framdrive	Ferroelectric storage device emulating a rotating disk drive unit in acomputer system and having a parallel data interface
US5359726A (en) *	1988-12-22	1994-10-25	Thomas Michael E	Ferroelectric storage device used in place of a rotating disk drive unit in a computer system
JP2591314B2 (ja) *	1989-10-27	1997-03-19	日本電気株式会社	半導体メモリ装置
US5107459A (en) *	1990-04-20	1992-04-21	International Business Machines Corporation	Stacked bit-line architecture for high density cross-point memory cell array
US5170243A (en) *	1991-11-04	1992-12-08	International Business Machines Corporation	Bit line configuration for semiconductor memory
US5936271A (en) *	1994-11-15	1999-08-10	Siemens Aktiengesellschaft	Unit cell layout and transfer gate design for high density DRAMs having a trench capacitor with signal electrode composed of three differently doped polysilicon layers
JPH10134566A (ja) *	1996-10-31	1998-05-22	Mitsubishi Electric Corp	記憶機能を有する半導体装置及びそのデータ読み出し方法
DE19936862C1 (de) *	1999-08-05	2001-01-25	Siemens Ag	Kontaktierung von Metalleiterbahnen eines integrierten Halbleiterchips
US6567329B2 (en)	2001-08-28	2003-05-20	Intel Corporation	Multiple word-line accessing and accessor
JP2006517830A (ja) *	2003-01-26	2006-08-03	プレコ−ルインコ−ポレイテッド	フィットネス機器の保守トラッキング及び警報システム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS56100463A (en) *	1980-01-14	1981-08-12	Toshiba Corp	Semiconductor memory device
US4380803A (en) *	1981-02-10	1983-04-19	Burroughs Corporation	Read-only/read-write memory
JPS592365A (ja) *	1982-06-28	1984-01-07	Fujitsu Ltd	ダイナミツク型半導体記憶装置
JPS602784B2 (ja) *	1982-12-20	1985-01-23	富士通株式会社	半導体記憶装置

1986
- 1986-01-30 JP JP61020614A patent/JPH0766659B2/ja not_active Expired - Lifetime
- 1986-12-03 US US06/937,206 patent/US4710789A/en not_active Expired - Fee Related
1987
- 1987-01-21 EP EP87300484A patent/EP0239187B1/de not_active Expired - Lifetime
- 1987-01-21 DE DE8787300484T patent/DE3778408D1/de not_active Expired - Fee Related

Also Published As

Publication number	Publication date
US4710789A (en)	1987-12-01
JPH0766659B2 (ja)	1995-07-19
EP0239187B1 (de)	1992-04-22
EP0239187A3 (en)	1990-10-03
EP0239187A2 (de)	1987-09-30
JPS62177792A (ja)	1987-08-04

Legal Events

Date	Code	Title
1993-05-19	8364	No opposition during term of opposition
1996-02-01	8320	Willingness to grant licences declared (paragraph 23)
1998-01-15	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
DE3778439D1 (de)	1992-05-27	Halbleiterspeicheranordnung.
DE3751002T2 (de)	1995-10-05	Halbleiterspeicher.
DE3778067D1 (de)	1992-05-14	Zweitor-halbleiterspeicheranordnung.
DE3788747T2 (de)	1994-05-05	Halbleiterspeicher.
DE3687322D1 (de)	1993-02-04	Halbleiterspeicheranordnung.
DE3785509T2 (de)	1993-07-29	Nichtfluechtige halbleiterspeicheranordnung.
DE3786819D1 (de)	1993-09-09	Nichtfluechtige halbleiterspeicheranordnung.
DE3772137D1 (de)	1991-09-19	Halbleiter-speicheranordnung.
DE3771238D1 (de)	1991-08-14	Halbleiterspeicher.
DE3778408D1 (de)	1992-05-27	Halbleiterspeicheranordnung.
DE3787616D1 (de)	1993-11-04	Halbleiterspeicheranordnung.
DE3675445D1 (de)	1990-12-13	Halbleiterspeicheranordnung.
DE3680562D1 (de)	1991-09-05	Halbleiterspeicheranordnung.
DE3783666D1 (de)	1993-03-04	Halbleiterspeicheranordnung.
DE3575225D1 (de)	1990-02-08	Halbleiterspeicheranordnung.
DE3887823T2 (de)	1994-08-11	Halbleiterspeicher.
DE3783493D1 (de)	1993-02-25	Halbleiterspeicheranordnung.
DE3789783D1 (de)	1994-06-16	Halbleiterspeicheranordnung.
DE3774369D1 (de)	1991-12-12	Halbleiter-speicheranordnung.
DE3687284T2 (de)	1993-05-06	Halbleiterspeicheranordnung.
DE3682346D1 (de)	1991-12-12	Halbleiterspeicheranordnung.
DE3683783D1 (de)	1992-03-19	Halbleiterspeicheranordnung.
DE3685889T2 (de)	1993-01-14	Halbleiterspeicheranordnung.
DE3771243D1 (de)	1991-08-14	Halbleiterspeicheranordnung.
DE3778601D1 (de)	1992-06-04	Nichtfluechtige halbleiterspeicheranordnung.