DE3782623D1 - Sin enthaltende bedeckungen fuer elektronische schaltungen. - Google Patents

Sin enthaltende bedeckungen fuer elektronische schaltungen.

Info

Publication number
DE3782623D1
DE3782623D1 DE8787308948T DE3782623T DE3782623D1 DE 3782623 D1 DE3782623 D1 DE 3782623D1 DE 8787308948 T DE8787308948 T DE 8787308948T DE 3782623 T DE3782623 T DE 3782623T DE 3782623 D1 DE3782623 D1 DE 3782623D1
Authority
DE
Germany
Prior art keywords
sin
containers
electronic circuits
circuits
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787308948T
Other languages
English (en)
Other versions
DE3782623T2 (de
Inventor
Loren Andrew Haluska
Ronald Howard Baney
Sarah Severson Snow
Leo Tarhay
Keith Winton Michael
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of DE3782623D1 publication Critical patent/DE3782623D1/de
Application granted granted Critical
Publication of DE3782623T2 publication Critical patent/DE3782623T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane
DE19873782623 1986-12-03 1987-10-09 Sin enthaltende bedeckungen fuer elektronische schaltungen. Expired - Fee Related DE3782623T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/937,276 US4826733A (en) 1986-12-03 1986-12-03 Sin-containing coatings for electronic devices

Publications (2)

Publication Number Publication Date
DE3782623D1 true DE3782623D1 (de) 1992-12-17
DE3782623T2 DE3782623T2 (de) 1993-04-15

Family

ID=25469722

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873782623 Expired - Fee Related DE3782623T2 (de) 1986-12-03 1987-10-09 Sin enthaltende bedeckungen fuer elektronische schaltungen.

Country Status (7)

Country Link
US (1) US4826733A (de)
EP (1) EP0270220B1 (de)
JP (1) JPH0612773B2 (de)
KR (1) KR950006348B1 (de)
CA (1) CA1284749C (de)
DE (1) DE3782623T2 (de)
ES (1) ES2005470A6 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US4753855A (en) * 1986-12-04 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from metal oxides for protection of electronic devices
US4847162A (en) * 1987-12-28 1989-07-11 Dow Corning Corporation Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia
CA2027031A1 (en) * 1989-10-18 1991-04-19 Loren A. Haluska Hermetic substrate coatings in an inert gas atmosphere
DE69416881T2 (de) * 1993-02-05 1999-11-04 Dow Corning Beschichtung von elektronischen Substraten mit Silika aus Polysilazanen
US5912047A (en) * 1993-03-25 1999-06-15 Dow Corning Corporation Borosilicate electronic coatings
JPH08148559A (ja) * 1994-11-15 1996-06-07 Fujitsu Ltd 絶縁膜を有する半導体装置の製造方法
DE69632825T2 (de) * 1995-08-16 2005-07-28 Kion Corp., Columbus Beschichtete optische geräte und verfahren zu deren herstellung
US5761367A (en) * 1996-08-13 1998-06-02 Lanxide Technology Company, Lp Coated optical devices and methods of making the same
TW437017B (en) * 1998-02-05 2001-05-28 Asm Japan Kk Silicone polymer insulation film on semiconductor substrate and method for formation thereof

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN147578B (de) * 1977-02-24 1980-04-19 Rca Corp
US4200666A (en) * 1978-08-02 1980-04-29 Texas Instruments Incorporated Single component monomer for silicon nitride deposition
DE2932569C2 (de) * 1979-08-10 1983-04-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Reduzierung der Dichte der schnellen Oberflächenzustände bei MOS-Bauelementen
US4404153A (en) * 1981-01-15 1983-09-13 Dow Corning Corporation Process for the preparation of poly(disilyl)silazane polymers and the polymers therefrom
US4340619A (en) * 1981-01-15 1982-07-20 Dow Corning Corporation Process for the preparation of poly(disilyl)silazane polymers and the polymers therefrom
US4312970A (en) * 1981-02-20 1982-01-26 Dow Corning Corporation Silazane polymers from {R'3 Si}2 NH and organochlorosilanes
US4395460A (en) * 1981-09-21 1983-07-26 Dow Corning Corporation Preparation of polysilazane polymers and the polymers therefrom
US4397828A (en) * 1981-11-16 1983-08-09 Massachusetts Institute Of Technology Stable liquid polymeric precursor to silicon nitride and process
US4543344A (en) * 1983-11-28 1985-09-24 Dow Corning Corporation Silicon nitride-containing ceramic material prepared by pyrolysis of hydrosilazane polymers from (R3 Si)2 NH and HSiCl3
US4540803A (en) * 1983-11-28 1985-09-10 Dow Corning Corporation Hydrosilazane polymers from [R3 Si]2 NH and HSiCl3
US4482669A (en) * 1984-01-19 1984-11-13 Massachusetts Institute Of Technology Preceramic organosilazane polymers
US4482689A (en) * 1984-03-12 1984-11-13 Dow Corning Corporation Process for the preparation of polymetallo(disily)silazane polymers and the polymers therefrom
US4535007A (en) * 1984-07-02 1985-08-13 Dow Corning Corporation Silicon nitride-containing ceramics
US4757035A (en) * 1984-09-21 1988-07-12 Dow Corning Corporation Ceramic materials with increased crystallinity from silazane polymers
JPS62145822A (ja) * 1985-12-20 1987-06-29 Nec Corp 半導体装置の製造方法
US4696834A (en) * 1986-02-28 1987-09-29 Dow Corning Corporation Silicon-containing coatings and a method for their preparation
US4745205A (en) * 1986-11-03 1988-05-17 Dow Corning Corporation Novel preceramic polymers derived from cyclic silazanes and halogenated disilanes and a method for their preparation
US4742143A (en) * 1986-11-04 1988-05-03 Dow Corning Corporation Preceramic polymers derived from cyclic silazanes, and halosilanes and a method for their preparation
US4822697A (en) * 1986-12-03 1989-04-18 Dow Corning Corporation Platinum and rhodium catalysis of low temperature formation multilayer ceramics

Also Published As

Publication number Publication date
EP0270220B1 (de) 1992-11-11
KR950006348B1 (ko) 1995-06-14
JPH0612773B2 (ja) 1994-02-16
EP0270220A3 (en) 1989-04-26
ES2005470A6 (es) 1989-03-01
KR880008442A (ko) 1988-08-31
JPS63144526A (ja) 1988-06-16
US4826733A (en) 1989-05-02
EP0270220A2 (de) 1988-06-08
DE3782623T2 (de) 1993-04-15
CA1284749C (en) 1991-06-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee