DE3784114T2 - Integrierte schaltung mit zwei schaltungsblocks, welche durch unterschiedliche versorgungsanschluesse unabhaengig gespeist werden. - Google Patents

Integrierte schaltung mit zwei schaltungsblocks, welche durch unterschiedliche versorgungsanschluesse unabhaengig gespeist werden.

Info

Publication number
DE3784114T2
DE3784114T2 DE8787111006T DE3784114T DE3784114T2 DE 3784114 T2 DE3784114 T2 DE 3784114T2 DE 8787111006 T DE8787111006 T DE 8787111006T DE 3784114 T DE3784114 T DE 3784114T DE 3784114 T2 DE3784114 T2 DE 3784114T2
Authority
DE
Germany
Prior art keywords
different supply
supply connections
independently powered
integrated circuit
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787111006T
Other languages
English (en)
Other versions
DE3784114D1 (de
Inventor
Kazuki Yoshitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE3784114D1 publication Critical patent/DE3784114D1/de
Application granted granted Critical
Publication of DE3784114T2 publication Critical patent/DE3784114T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
DE8787111006T 1986-07-30 1987-07-29 Integrierte schaltung mit zwei schaltungsblocks, welche durch unterschiedliche versorgungsanschluesse unabhaengig gespeist werden. Expired - Fee Related DE3784114T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61180354A JPH0693497B2 (ja) 1986-07-30 1986-07-30 相補型ｍｉｓ集積回路

Publications (2)

Publication Number Publication Date
DE3784114D1 DE3784114D1 (de) 1993-03-25
DE3784114T2 true DE3784114T2 (de) 1993-06-09

Family

ID=16081770

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787111006T Expired - Fee Related DE3784114T2 (de) 1986-07-30 1987-07-29 Integrierte schaltung mit zwei schaltungsblocks, welche durch unterschiedliche versorgungsanschluesse unabhaengig gespeist werden.

Country Status (4)

Country Link
US (1) US4855863A (de)
EP (1) EP0255125B1 (de)
JP (1) JPH0693497B2 (de)
DE (1) DE3784114T2 (de)

Families Citing this family (37)

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KR900702569A (ko) * 1988-06-01 1990-12-07 원본미기재 웨이퍼스케일 집적회로
EP0348895B1 (de) * 1988-06-27 1995-05-17 Nec Corporation Halbleiterspeichervorrichtung, die mit einer Niederrausch-Spannungsversorgung ausgestattet ist
JP2806532B2 (ja) * 1988-09-28 1998-09-30 日本電気アイシーマイコンシステム株式会社 半導体集積回路装置
JPH02111064A (ja) * 1988-10-20 1990-04-24 Nec Corp モノリシックｉｃの静電破壊保護回路
JP2752680B2 (ja) * 1989-01-20 1998-05-18 日本電気アイシーマイコンシステム株式会社 半導体集積回路装置の過電圧吸収回路
US5343352A (en) * 1989-01-20 1994-08-30 Nec Corporation Integrated circuit having two circuit blocks energized through different power supply systems
US5200876A (en) * 1989-04-10 1993-04-06 Matsushita Electric Industrial Co., Ltd. Electrostatic breakdown protection circuit
JP2855692B2 (ja) * 1989-09-06 1999-02-10 ソニー株式会社 Ｃｃｄ装置
JP2619119B2 (ja) * 1990-06-21 1997-06-11 株式会社東芝 半導体集積回路
EP0464751A3 (en) * 1990-07-06 1992-07-22 Kabushiki Kaisha Toshiba Semiconductor device with protection circuit
JPH0494568A (ja) * 1990-08-10 1992-03-26 Nec Ic Microcomput Syst Ltd 半導体集積回路装置
WO1992003866A1 (en) * 1990-08-27 1992-03-05 Power Management International Solid state circuit interrupter and circuit breaker
JP3375659B2 (ja) * 1991-03-28 2003-02-10 テキサス インスツルメンツ インコーポレイテツド 静電放電保護回路の形成方法
KR930001392A (ko) * 1991-06-19 1993-01-16 김광호 반도체 메모리 장치의 전원 접지선 배선방법
US5204554A (en) * 1991-12-06 1993-04-20 National Semiconductor Corporation Partial isolation of power rails for output buffer circuits
US5272097A (en) * 1992-04-07 1993-12-21 Philip Shiota Method for fabricating diodes for electrostatic discharge protection and voltage references
US5591661A (en) * 1992-04-07 1997-01-07 Shiota; Philip Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures
US5608594A (en) * 1992-04-14 1997-03-04 Oki Electric Industry Co., Ltd. Semiconductor integrated circuit with surge-protected output MISFET's
JP3276996B2 (ja) * 1992-09-09 2002-04-22 株式会社東芝 保護回路
TW282598B (de) 1995-02-22 1996-08-01 Fujitsu Ltd
DE19507313C2 (de) * 1995-03-02 1996-12-19 Siemens Ag Halbleiterbauelement mit Schutzstruktur zum Schutz vor elektrostatischer Entladung
US6075686A (en) * 1997-07-09 2000-06-13 Industrial Technology Research Institute ESD protection circuit for mixed mode integrated circuits with separated power pins
JP2001244418A (ja) * 2000-03-01 2001-09-07 Nec Corp 半導体集積回路装置
JP4215482B2 (ja) 2002-10-22 2009-01-28 Ｎｅｃエレクトロニクス株式会社 静電保護回路及び半導体装置
FR2856196B1 (fr) * 2003-06-13 2005-09-09 St Microelectronics Sa Composant electronique protege contre les decharges electrostatiques
JP2005049637A (ja) * 2003-07-29 2005-02-24 Seiko Epson Corp 駆動回路及びその保護方法、電気光学装置並びに電子機器
GB2445327B (en) * 2004-02-07 2008-08-13 Samsung Electronics Co Ltd Buffer circuit having electrostatic discharge protection
JP5085139B2 (ja) * 2004-02-07 2012-11-28 サムスン エレクトロニクス カンパニー リミテッド 静電気保護機能を有するバッファ回路
US7876302B2 (en) 2004-07-26 2011-01-25 Seiko Epson Corporation Driving circuit for electro-optical panel and driving method thereof, electro-optical device, and electronic apparatus having electro-optical device
JP5006580B2 (ja) 2006-05-31 2012-08-22 ルネサスエレクトロニクス株式会社 保護回路を備える半導体装置
US7362555B2 (en) * 2006-08-26 2008-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection circuit for a mixed-voltage semiconductor device
US7952844B2 (en) * 2007-06-20 2011-05-31 United Microelectronics Corp. Electrostatic discharge immunizing circuit without area penalty
JP2009105721A (ja) * 2007-10-24 2009-05-14 New Japan Radio Co Ltd レベルシフト回路
JP5175597B2 (ja) * 2007-11-12 2013-04-03 エスケーハイニックス株式会社 半導体集積回路
KR101211683B1 (ko) * 2008-12-31 2012-12-12 에스케이하이닉스 주식회사 반도체 집적회로
CN102208407A (zh) * 2010-03-31 2011-10-05 上海宏力半导体制造有限公司 复合电源电路以及双向晶闸管
CN110086434A (zh) * 2019-02-28 2019-08-02 厦门优迅高速芯片有限公司 一种提升跨阻放大电路中rssi脚抗噪能力的电路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943563A (ja) * 1982-09-03 1984-03-10 Olympus Optical Co Ltd 半導体集積回路装置
SE455552B (sv) * 1985-02-26 1988-07-18 Asea Ab Halvledaranordning innefattande en overspenningsskyddskrets
JPS62216351A (ja) * 1986-03-18 1987-09-22 Fujitsu Ltd 半導体集積回路
US4736271A (en) * 1987-06-23 1988-04-05 Signetics Corporation Protection device utilizing one or more subsurface diodes and associated method of manufacture

Also Published As

Publication number Publication date
EP0255125A3 (en) 1990-11-22
DE3784114D1 (de) 1993-03-25
US4855863A (en) 1989-08-08
JPS6336557A (ja) 1988-02-17
EP0255125A2 (de) 1988-02-03
JPH0693497B2 (ja) 1994-11-16
EP0255125B1 (de) 1993-02-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee