DE3784191D1 - Halbleiterphotodetektor mit schottky-uebergang. - Google Patents

Halbleiterphotodetektor mit schottky-uebergang.

Info

Publication number
DE3784191D1
DE3784191D1 DE8787109392T DE3784191T DE3784191D1 DE 3784191 D1 DE3784191 D1 DE 3784191D1 DE 8787109392 T DE8787109392 T DE 8787109392T DE 3784191 T DE3784191 T DE 3784191T DE 3784191 D1 DE3784191 D1 DE 3784191D1
Authority
DE
Germany
Prior art keywords
semiconductor photodetector
schottky transition
schottky
transition
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787109392T
Other languages
English (en)
Other versions
DE3784191T2 (de
Inventor
Dennis Lee Rogers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3784191D1 publication Critical patent/DE3784191D1/de
Publication of DE3784191T2 publication Critical patent/DE3784191T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
DE8787109392T 1986-07-08 1987-06-30 Halbleiterphotodetektor mit schottky-uebergang. Expired - Fee Related DE3784191T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/883,187 US4772931A (en) 1986-07-08 1986-07-08 Interdigitated Schottky barrier photodetector

Publications (2)

Publication Number Publication Date
DE3784191D1 true DE3784191D1 (de) 1993-03-25
DE3784191T2 DE3784191T2 (de) 1993-08-12

Family

ID=25382141

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787109392T Expired - Fee Related DE3784191T2 (de) 1986-07-08 1987-06-30 Halbleiterphotodetektor mit schottky-uebergang.

Country Status (4)

Country Link
US (1) US4772931A (de)
EP (1) EP0252414B1 (de)
JP (1) JPS6319881A (de)
DE (1) DE3784191T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4807006A (en) * 1987-06-19 1989-02-21 International Business Machines Corporation Heterojunction interdigitated schottky barrier photodetector
JPH01292867A (ja) * 1988-05-20 1989-11-27 Hitachi Ltd 受光装置
JP2527791B2 (ja) * 1988-08-05 1996-08-28 三菱電機株式会社 Ｍｓｍ型半導体受光素子
JPH06511111A (ja) * 1991-09-30 1994-12-08 ルミニス　プロプライエタリー　リミテッド ガリウム砒素ｍｅｓｆｅｔ撮像デバイス
AU667834B2 (en) * 1991-09-30 1996-04-18 Luminis Pty Limited Gallium arsenide mesfet imager
US5631490A (en) * 1995-01-11 1997-05-20 Lucent Technologies Inc. Metal semiconductor metal photodetectors
US5546281A (en) 1995-01-13 1996-08-13 Methode Electronics, Inc. Removable optoelectronic transceiver module with potting box
US6220878B1 (en) 1995-10-04 2001-04-24 Methode Electronics, Inc. Optoelectronic module with grounding means
US5717533A (en) 1995-01-13 1998-02-10 Methode Electronics Inc. Removable optoelectronic module
US6054718A (en) * 1998-03-31 2000-04-25 Lockheed Martin Corporation Quantum well infrared photocathode having negative electron affinity surface
CA2264341A1 (en) * 1998-04-14 1999-10-14 Mikohn Gaming Corporation Pachinko stand-alone and bonusing game
US6179627B1 (en) 1998-04-22 2001-01-30 Stratos Lightwave, Inc. High speed interface converter module
US6203333B1 (en) 1998-04-22 2001-03-20 Stratos Lightwave, Inc. High speed interface converter module
US6239422B1 (en) 1999-03-10 2001-05-29 Trw Inc. Variable electrode traveling wave metal-semiconductor-metal waveguide photodetector
US6220873B1 (en) 1999-08-10 2001-04-24 Stratos Lightwave, Inc. Modified contact traces for interface converter
GB2392782B (en) * 2002-09-04 2005-07-13 Teraview Ltd An Antenna
US7368760B2 (en) 2004-12-15 2008-05-06 Tower Semiconductor Ltd. Low parasitic capacitance Schottky diode
WO2007033610A1 (en) * 2005-09-26 2007-03-29 Hongkong Applied Science And Technology Research Institute Co., Ltd. Photo-detectors and optical devices incorporating same
CN102324445A (zh) * 2011-09-22 2012-01-18 中国科学院苏州纳米技术与纳米仿生研究所 具有改良结构的msm光探测器及其制备方法
EP3795725B1 (de) * 2014-07-17 2021-08-18 Sumitomo Electric Industries, Ltd. N-typ gaas-einkristall
CN114122171B (zh) * 2021-11-29 2023-07-28 西安邮电大学 氧化镓基日盲紫外光强度探测器及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700980A (en) * 1971-04-08 1972-10-24 Texas Instruments Inc Schottky barrier phototransistor
JPS56111273A (en) * 1980-02-07 1981-09-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photodetecting device
EP0063422B1 (de) * 1981-04-20 1988-06-01 Hughes Aircraft Company Schneller photoleitender Detektor mit Heteroübergang und kammartiger Kontaktstruktur
EP0063421B1 (de) * 1981-04-20 1987-05-06 Hughes Aircraft Company Schneller photoleitender Detektor
DE3234096A1 (de) * 1982-09-14 1984-03-15 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Bauelemente und arrays aus silizium zur detektion von infrarotem licht
US4478879A (en) * 1983-02-10 1984-10-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Screen printed interdigitated back contact solar cell
JPS6156469A (ja) * 1984-08-28 1986-03-22 Fujitsu Ltd 半導体受光装置
JPS61154085A (ja) * 1984-12-26 1986-07-12 Fujitsu Ltd 半導体受光装置

Also Published As

Publication number Publication date
EP0252414B1 (de) 1993-02-17
US4772931A (en) 1988-09-20
EP0252414A2 (de) 1988-01-13
DE3784191T2 (de) 1993-08-12
JPS6319881A (ja) 1988-01-27
JPH0552070B2 (de) 1993-08-04
EP0252414A3 (en) 1990-05-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee