DE3786934D1 - Halbleiterlaser von eingebettetem struktur-typ und dessen herstellungsverfahren. - Google Patents

Halbleiterlaser von eingebettetem struktur-typ und dessen herstellungsverfahren.

Info

Publication number
DE3786934D1
DE3786934D1 DE8787100146T DE3786934T DE3786934D1 DE 3786934 D1 DE3786934 D1 DE 3786934D1 DE 8787100146 T DE8787100146 T DE 8787100146T DE 3786934 T DE3786934 T DE 3786934T DE 3786934 D1 DE3786934 D1 DE 3786934D1
Authority
DE
Germany
Prior art keywords
production method
semiconductor laser
structure type
embedded structure
embedded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787100146T
Other languages
English (en)
Other versions
DE3786934T2 (de
Inventor
Hideto Furuyama
Atsushi Kurobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3786934D1 publication Critical patent/DE3786934D1/de
Application granted granted Critical
Publication of DE3786934T2 publication Critical patent/DE3786934T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/34Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054Methods of obtaining the confinement
    • H01S5/2059Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
DE87100146T 1986-03-06 1987-01-08 Halbleiterlaser von eingebettetem Struktur-Typ und dessen Herstellungsverfahren. Expired - Lifetime DE3786934T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61047334A JPH07112091B2 (ja) 1986-03-06 1986-03-06 埋め込み型半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
DE3786934D1 true DE3786934D1 (de) 1993-09-16
DE3786934T2 DE3786934T2 (de) 1993-12-16

Family

ID=12772315

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87100146T Expired - Lifetime DE3786934T2 (de) 1986-03-06 1987-01-08 Halbleiterlaser von eingebettetem Struktur-Typ und dessen Herstellungsverfahren.

Country Status (5)

Country Link
US (1) US4810670A (de)
EP (1) EP0235502B1 (de)
JP (1) JPH07112091B2 (de)
KR (1) KR900003844B1 (de)
DE (1) DE3786934T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH073908B2 (ja) * 1987-07-16 1995-01-18 三菱電機株式会社 半導体発光装置の製造方法
JPS6482594A (en) * 1987-09-24 1989-03-28 Mitsubishi Electric Corp Semiconductor laser device and manufacture thereof
JPH01143285A (ja) * 1987-11-28 1989-06-05 Mitsubishi Electric Corp 半導体超格子の無秩序化方法及び半導体レーザ装置
JPH0775265B2 (ja) * 1988-02-02 1995-08-09 三菱電機株式会社 半導体レーザおよびその製造方法
US5031185A (en) * 1988-11-17 1991-07-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a disordered superlattice
JPH02196486A (ja) * 1989-01-24 1990-08-03 Mitsubishi Electric Corp 半導体レーザの製造方法
US5563094A (en) * 1989-03-24 1996-10-08 Xerox Corporation Buried reverse bias junction configurations in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth and device structures utilizing the same
US5013684A (en) * 1989-03-24 1991-05-07 Xerox Corporation Buried disordering sources in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth
JPH03126283A (ja) * 1989-10-11 1991-05-29 Toshiba Corp 窓構造半導体レーザ素子の製造方法
US5126281A (en) * 1990-09-11 1992-06-30 Hewlett-Packard Company Diffusion using a solid state source
DE19837221A1 (de) * 1998-08-17 2000-03-02 Siemens Ag Kantenemitter und Verfahren zur Herstellung desselben
US6876006B1 (en) 1999-04-27 2005-04-05 Schlumberger Technology Corporation Radiation source

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS537277B2 (de) * 1973-07-11 1978-03-16
US3984262A (en) * 1974-12-09 1976-10-05 Xerox Corporation Method of making a substrate striped planar laser
JPS51147985A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Method of manufacturing a semiconductor light emission device
GB1570479A (en) * 1978-02-14 1980-07-02 Standard Telephones Cables Ltd Heterostructure laser
JPS5638885A (en) * 1979-09-07 1981-04-14 Fujitsu Ltd Light emission semiconductor device
JPS5789286A (en) * 1980-11-25 1982-06-03 Sharp Corp Semiconductor laser element
JPS6035591A (ja) * 1983-08-08 1985-02-23 Agency Of Ind Science & Technol 高性能半導体レ−ザ装置及びその製造方法
JPS62130581A (ja) * 1985-11-30 1987-06-12 Fujitsu Ltd 半導体レーザの製造方法

Also Published As

Publication number Publication date
DE3786934T2 (de) 1993-12-16
JPH07112091B2 (ja) 1995-11-29
EP0235502A2 (de) 1987-09-09
EP0235502B1 (de) 1993-08-11
JPS62205681A (ja) 1987-09-10
US4810670A (en) 1989-03-07
KR870009506A (ko) 1987-10-27
EP0235502A3 (en) 1988-09-21
KR900003844B1 (ko) 1990-06-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)