DE3786934D1 - Halbleiterlaser von eingebettetem struktur-typ und dessen herstellungsverfahren. - Google Patents
Halbleiterlaser von eingebettetem struktur-typ und dessen herstellungsverfahren.Info
- Publication number
- DE3786934D1 DE3786934D1 DE8787100146T DE3786934T DE3786934D1 DE 3786934 D1 DE3786934 D1 DE 3786934D1 DE 8787100146 T DE8787100146 T DE 8787100146T DE 3786934 T DE3786934 T DE 3786934T DE 3786934 D1 DE3786934 D1 DE 3786934D1
- Authority
- DE
- Germany
- Prior art keywords
- production method
- semiconductor laser
- structure type
- embedded structure
- embedded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61047334A JPH07112091B2 (ja) | 1986-03-06 | 1986-03-06 | 埋め込み型半導体レ−ザの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3786934D1 true DE3786934D1 (de) | 1993-09-16 |
DE3786934T2 DE3786934T2 (de) | 1993-12-16 |
Family
ID=12772315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE87100146T Expired - Lifetime DE3786934T2 (de) | 1986-03-06 | 1987-01-08 | Halbleiterlaser von eingebettetem Struktur-Typ und dessen Herstellungsverfahren. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4810670A (de) |
EP (1) | EP0235502B1 (de) |
JP (1) | JPH07112091B2 (de) |
KR (1) | KR900003844B1 (de) |
DE (1) | DE3786934T2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH073908B2 (ja) * | 1987-07-16 | 1995-01-18 | 三菱電機株式会社 | 半導体発光装置の製造方法 |
JPS6482594A (en) * | 1987-09-24 | 1989-03-28 | Mitsubishi Electric Corp | Semiconductor laser device and manufacture thereof |
JPH01143285A (ja) * | 1987-11-28 | 1989-06-05 | Mitsubishi Electric Corp | 半導体超格子の無秩序化方法及び半導体レーザ装置 |
JPH0775265B2 (ja) * | 1988-02-02 | 1995-08-09 | 三菱電機株式会社 | 半導体レーザおよびその製造方法 |
US5031185A (en) * | 1988-11-17 | 1991-07-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having a disordered superlattice |
JPH02196486A (ja) * | 1989-01-24 | 1990-08-03 | Mitsubishi Electric Corp | 半導体レーザの製造方法 |
US5563094A (en) * | 1989-03-24 | 1996-10-08 | Xerox Corporation | Buried reverse bias junction configurations in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth and device structures utilizing the same |
US5013684A (en) * | 1989-03-24 | 1991-05-07 | Xerox Corporation | Buried disordering sources in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth |
JPH03126283A (ja) * | 1989-10-11 | 1991-05-29 | Toshiba Corp | 窓構造半導体レーザ素子の製造方法 |
US5126281A (en) * | 1990-09-11 | 1992-06-30 | Hewlett-Packard Company | Diffusion using a solid state source |
DE19837221A1 (de) * | 1998-08-17 | 2000-03-02 | Siemens Ag | Kantenemitter und Verfahren zur Herstellung desselben |
US6876006B1 (en) | 1999-04-27 | 2005-04-05 | Schlumberger Technology Corporation | Radiation source |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS537277B2 (de) * | 1973-07-11 | 1978-03-16 | ||
US3984262A (en) * | 1974-12-09 | 1976-10-05 | Xerox Corporation | Method of making a substrate striped planar laser |
JPS51147985A (en) * | 1975-06-13 | 1976-12-18 | Fujitsu Ltd | Method of manufacturing a semiconductor light emission device |
GB1570479A (en) * | 1978-02-14 | 1980-07-02 | Standard Telephones Cables Ltd | Heterostructure laser |
JPS5638885A (en) * | 1979-09-07 | 1981-04-14 | Fujitsu Ltd | Light emission semiconductor device |
JPS5789286A (en) * | 1980-11-25 | 1982-06-03 | Sharp Corp | Semiconductor laser element |
JPS6035591A (ja) * | 1983-08-08 | 1985-02-23 | Agency Of Ind Science & Technol | 高性能半導体レ−ザ装置及びその製造方法 |
JPS62130581A (ja) * | 1985-11-30 | 1987-06-12 | Fujitsu Ltd | 半導体レーザの製造方法 |
-
1986
- 1986-03-06 JP JP61047334A patent/JPH07112091B2/ja not_active Expired - Lifetime
- 1986-12-19 US US06/943,760 patent/US4810670A/en not_active Expired - Lifetime
-
1987
- 1987-01-08 EP EP87100146A patent/EP0235502B1/de not_active Expired - Lifetime
- 1987-01-08 DE DE87100146T patent/DE3786934T2/de not_active Expired - Lifetime
- 1987-03-06 KR KR1019870002016A patent/KR900003844B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE3786934T2 (de) | 1993-12-16 |
JPH07112091B2 (ja) | 1995-11-29 |
EP0235502A2 (de) | 1987-09-09 |
EP0235502B1 (de) | 1993-08-11 |
JPS62205681A (ja) | 1987-09-10 |
US4810670A (en) | 1989-03-07 |
KR870009506A (ko) | 1987-10-27 |
EP0235502A3 (en) | 1988-09-21 |
KR900003844B1 (ko) | 1990-06-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |