DE3787187D1 - Dynamischer Lese-Schreibspeicher mit Auffrischwirkung. - Google Patents

Dynamischer Lese-Schreibspeicher mit Auffrischwirkung.

Info

Publication number
DE3787187D1
DE3787187D1 DE87101941T DE3787187T DE3787187D1 DE 3787187 D1 DE3787187 D1 DE 3787187D1 DE 87101941 T DE87101941 T DE 87101941T DE 3787187 T DE3787187 T DE 3787187T DE 3787187 D1 DE3787187 D1 DE 3787187D1
Authority
DE
Germany
Prior art keywords
write memory
refreshing effect
dynamic read
dynamic
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE87101941T
Other languages
English (en)
Other versions
DE3787187T2 (de
Inventor
Kazuhiro C O Patent Div Sawada
Takayasu C O Patent Di Sakurai
Kazutaka C O Patent Div Nogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3787187D1 publication Critical patent/DE3787187D1/de
Application granted granted Critical
Publication of DE3787187T2 publication Critical patent/DE3787187T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
DE87101941T 1986-02-14 1987-02-12 Dynamischer Lese-Schreibspeicher mit Auffrischwirkung. Expired - Lifetime DE3787187T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61030139A JPS62188095A (ja) 1986-02-14 1986-02-14 半導体記憶装置の制御回路

Publications (2)

Publication Number Publication Date
DE3787187D1 true DE3787187D1 (de) 1993-10-07
DE3787187T2 DE3787187T2 (de) 1994-02-03

Family

ID=12295431

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87101941T Expired - Lifetime DE3787187T2 (de) 1986-02-14 1987-02-12 Dynamischer Lese-Schreibspeicher mit Auffrischwirkung.

Country Status (5)

Country Link
US (1) US4984208A (de)
EP (1) EP0237785B1 (de)
JP (1) JPS62188095A (de)
KR (1) KR910002499B1 (de)
DE (1) DE3787187T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0425693B1 (de) * 1989-05-08 1996-09-04 Hitachi Maxell, Ltd. Speicherkassette und speichersteuerverfahren
US5193072A (en) * 1990-12-21 1993-03-09 Vlsi Technology, Inc. Hidden refresh of a dynamic random access memory
JPH04372790A (ja) * 1991-06-21 1992-12-25 Sharp Corp 半導体記憶装置
EP0541060A3 (en) * 1991-11-05 1994-05-18 Fujitsu Ltd Dynamic random access memory having an improved operational stability
US5493530A (en) * 1993-08-26 1996-02-20 Paradigm Technology, Inc. Ram with pre-input register logic
US5369316A (en) * 1993-11-22 1994-11-29 United Microelectronics Corporation Advanced output buffer with reduced voltage swing at output terminal
US5748547A (en) * 1996-05-24 1998-05-05 Shau; Jeng-Jye High performance semiconductor memory devices having multiple dimension bit lines
JP3376998B2 (ja) 2000-03-08 2003-02-17 日本電気株式会社 半導体記憶装置
JP2001285775A (ja) * 2000-03-29 2001-10-12 Fuji Photo Film Co Ltd 画像処理装置および画像処理方法
JP3540243B2 (ja) 2000-04-24 2004-07-07 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
US6275437B1 (en) 2000-06-30 2001-08-14 Samsung Electronics Co., Ltd. Refresh-type memory with zero write recovery time and no maximum cycle time
JP3409059B2 (ja) 2000-07-26 2003-05-19 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
EP1335383A4 (de) * 2000-08-31 2004-09-15 Nec Electronics Corp Halbleiterspeicherung und auffrischverfahren dafür
KR100372249B1 (ko) * 2000-11-09 2003-02-19 삼성전자주식회사 분할 워드라인 액티베이션을 갖는 리프레쉬 타입 반도체메모리 장치
KR100455393B1 (ko) * 2002-08-12 2004-11-06 삼성전자주식회사 리프레시 플래그를 발생시키는 반도체 메모리 장치 및반도체 메모리 시스템.
KR100482368B1 (ko) * 2002-08-28 2005-04-13 삼성전자주식회사 고속동작에서의 리프레쉬 페일을 최소화하기 위한리프레쉬 회로를 갖는 리프레쉬 타입 반도체 메모리장치
US6735140B1 (en) * 2002-12-19 2004-05-11 Cypress Semiconductor Corporation Method and system for performing memory operations of a memory device
JP3765307B2 (ja) * 2003-05-15 2006-04-12 セイコーエプソン株式会社 半導体メモリ装置および電子機器
US6999368B2 (en) * 2003-05-27 2006-02-14 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and semiconductor integrated circuit device
US9064601B2 (en) * 2012-08-12 2015-06-23 Etron Technology, Inc. Method of providing write recovery protection in PSRAM and related device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2543515A1 (de) * 1975-09-30 1977-04-07 Licentia Gmbh Verfahren zum regenerieren der speicherinhalte von speicherzellen in mos-speichern und mos-speicher zur durchfuehrung des verfahrens
JPS563496A (en) * 1979-06-18 1981-01-14 Hitachi Ltd Memory control circuit
US4328566A (en) * 1980-06-24 1982-05-04 Pitney Bowes Inc. Dynamic memory refresh system with additional refresh cycles
JPS5826396A (ja) * 1981-08-11 1983-02-16 Fujitsu Ltd ダイナミツク・ランダムアクセスメモリのリフレツシユ方式
JPS59111894A (ja) * 1982-12-17 1984-06-28 富士ゼロックス株式会社 製本機のブツククランプ構造
US4672583A (en) * 1983-06-15 1987-06-09 Nec Corporation Dynamic random access memory device provided with test circuit for internal refresh circuit
JPS615495A (ja) * 1984-05-31 1986-01-11 Toshiba Corp 半導体記憶装置
US4747082A (en) * 1984-11-28 1988-05-24 Hitachi Ltd. Semiconductor memory with automatic refresh means
JPS6129320A (ja) * 1985-03-11 1986-02-10 株式会社日立製作所 電気掃除機のじゆうたん用吸口
JPS621187A (ja) * 1985-06-26 1987-01-07 Toshiba Corp ダイナミツクメモリのアクセス制御方式
JPS6216294A (ja) * 1985-07-16 1987-01-24 Fuji Xerox Co Ltd メモリ装置
US4718041A (en) * 1986-01-09 1988-01-05 Texas Instruments Incorporated EEPROM memory having extended life
JPS62188096A (ja) * 1986-02-13 1987-08-17 Toshiba Corp 半導体記憶装置のリフレツシユ動作タイミング制御回路
JPS63155494A (ja) * 1986-12-19 1988-06-28 Fujitsu Ltd 擬似スタテイツクメモリ装置
JPS63166093A (ja) * 1986-12-26 1988-07-09 Toshiba Corp 半導体メモリの制御回路

Also Published As

Publication number Publication date
US4984208A (en) 1991-01-08
DE3787187T2 (de) 1994-02-03
EP0237785B1 (de) 1993-09-01
JPS62188095A (ja) 1987-08-17
EP0237785A2 (de) 1987-09-23
JPH056279B2 (de) 1993-01-26
KR870008314A (ko) 1987-09-25
EP0237785A3 (en) 1990-07-18
KR910002499B1 (ko) 1991-04-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)